KR970026902A - 층·층·층 제작 방법에 의한 유사다이아몬드 박막 제조방법 - Google Patents

층·층·층 제작 방법에 의한 유사다이아몬드 박막 제조방법 Download PDF

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KR970026902A
KR970026902A KR1019950039256A KR19950039256A KR970026902A KR 970026902 A KR970026902 A KR 970026902A KR 1019950039256 A KR1019950039256 A KR 1019950039256A KR 19950039256 A KR19950039256 A KR 19950039256A KR 970026902 A KR970026902 A KR 970026902A
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layer
thin film
dlc
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장진
박규창
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장진
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Priority to KR1019950039256A priority Critical patent/KR0152251B1/ko
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Priority to JP9517237A priority patent/JPH10500936A/ja
Priority to US08/860,770 priority patent/US5939149A/en
Priority to DE69612734T priority patent/DE69612734T2/de
Priority to PCT/KR1996/000192 priority patent/WO1997016580A1/en
Priority to CN96191316A priority patent/CN1061387C/zh
Priority to EP96935569A priority patent/EP0802988B1/en
Priority to KR1019970700936A priority patent/KR100245910B1/ko
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    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract

본 발명은 층·층·층 증착법을 이용하여 수소가 없는 DLC박막을 피·이·시·브·디로 성장시키는 방법에 관한 것이다. DLC 박막의 특성은 시료내에 함유된 수소량에 의하여 크게 영향을 받는다. 박막내에 포함된 수소양을 감소시키기 위하여 층과 층 사이에 CF4플라즈마를 노출시키는 공정을 개발하였다. 이러한 방법에 의해 수소가 거의 없는 DLC박막을 피·이·시·브·디 방법으로 제작하는데 성공하였다. 본 발명에서 고안된 층·층·층 방법은 피·이·시·브·디 방법을 이용하므로 대면적 증착이 용이하다. 본 발명으로 제작한 DLC박막을 FED의 전계방출팁으로 이용할 경우에 전계 방출에 의한 임계 전계를 낮출 수 있고 전류를 크게 할 수 있다.

Description

층·층·층 제작 방법에 의한 유사다이아몬드 박막 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1-a도는 종래의 유사다이아몬드(DLC : Diamond-Like Carbon)를 피·이·시·브·디(PECVD)방법에 의해 제작하는 방법, 제1-b도는 본 발명에 의해 개발한 유사다이아몬드(DLC) 박막을 피·이·시·브·디방법으로 제조하는 방법.
제2도는 본 발명에서 제안한 새로운 유사다이아몬드(DLC) 박막 제작의 실시예에 따른 유사다이아몬드 박막 C-Hn(n=1~3)진동 흡수 스펙트럼[투과도] 특성 그래프.
제3도는 본 발명에서 제안한 새로운 유사다이아몬드 박막 제작의 실시예에 따른 유사다이아몬드 박막의 광학적 밴드갭을 구하기 위한 타우쯔(Tauc) 구성.
제4도는 본 발명에서 제안된 새로운 유사다이아몬드 박막 제작의 실시예에 따른 유사다이아몬드 박막의 온도에 따른 전기 전도도 특성 그래프.
제5도는 전계방출소자 실시예 5-a도는 본 발명에서 제안한 새로운 유사다이아본드 박막 제작의 실시예에 따른 유사다이아몬드 박막을 이용한 전계 방출 소자 적용 실시예에서 얻은 전류-전계 특성, 5-b도는 본 발명에서 제안한 새로운 유사다이아몬드 박막 제작에 실시예에 따른 유사다이아몬드 박막을 이용한 전계방출 소자 적용 실시예에서 얻은 전류-전계 특성을 파울리-노더하임 구성으로 나타낸 예.

Claims (6)

  1. 유사다이아몬드(DLC) 박막을 제작시에, DLC 박막을 층·층·층으로 증착시에 층과 층사이에 CF4가 포함된 가스를 이용한 플라즈마를 각층 또는 일부층에 노출시키는 공정을 포함하는 DLC 제조방법.
  2. 제1항의 경우에 DLC 각층의 두께를 10Å~1000Å로 조절한 모든 DLC 제조 공정.
  3. 제1항에의 경우에 증착방법으로 피·이·시·브·디(PECVD), 이·시·알·시·브·디(ECRCVD)등의 플라즈마를 이용하는 모든 증착 방법.
  4. 제1항의 경우에 각층에 노출된 CF4혹은 CF4혼합가스의 노출시간이 1시간 이하인 모든 공정.
  5. 제1항의 경우에 각층에 노출된 플라즈마가 불소(F)를 포함하는 모든 공정.
  6. 제1항에 기술된 방법으로 제작한 DLC를 이용한 FED 및 전계효과를 이용한 모든 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950039256A 1995-11-02 1995-11-02 층 .층 .층 제작 방법에 의한 유사다이아몬드 박막 제조 방법 KR0152251B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019950039256A KR0152251B1 (ko) 1995-11-02 1995-11-02 층 .층 .층 제작 방법에 의한 유사다이아몬드 박막 제조 방법
JP9517237A JPH10500936A (ja) 1995-11-02 1996-11-02 ダイヤモンド様炭素（ｄｌｃ）膜の製法、それにより製造したｄｌｃ膜、その使用法、電界エミッタアレイ及び電界エミッタカソード
US08/860,770 US5939149A (en) 1995-11-02 1996-11-02 Method of forming hydrogen-free diamond like carbon (DLC) films
DE69612734T DE69612734T2 (de) 1995-11-02 1996-11-02 Verfahren zur herstellung diamantähnlicher kohlenstoff-filme (dlc)
PCT/KR1996/000192 WO1997016580A1 (en) 1995-11-02 1996-11-02 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes
CN96191316A CN1061387C (zh) 1995-11-02 1996-11-02 制备类金刚石碳膜(dlc)的方法、由此制备的dlc膜、该膜的用途、场致发射体阵列以及场致发射体阴极
EP96935569A EP0802988B1 (en) 1995-11-02 1996-11-02 Method of forming diamond-like carbon film (dlc)
KR1019970700936A KR100245910B1 (ko) 1995-11-02 1996-11-02 유사 다이아몬드박막의 제조방법,이에 따른 유사 다이아몬드박막,전계방출어레이 및 전계에미터캐소드

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KR1019950039256A KR0152251B1 (ko) 1995-11-02 1995-11-02 층 .층 .층 제작 방법에 의한 유사다이아몬드 박막 제조 방법

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KR970026902A true KR970026902A (ko) 1996-06-24
KR0152251B1 KR0152251B1 (ko) 1998-10-15

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KR1019950039256A KR0152251B1 (ko) 1995-11-02 1995-11-02 층 .층 .층 제작 방법에 의한 유사다이아몬드 박막 제조 방법
KR1019970700936A KR100245910B1 (ko) 1995-11-02 1996-11-02 유사 다이아몬드박막의 제조방법,이에 따른 유사 다이아몬드박막,전계방출어레이 및 전계에미터캐소드

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KR1019970700936A KR100245910B1 (ko) 1995-11-02 1996-11-02 유사 다이아몬드박막의 제조방법,이에 따른 유사 다이아몬드박막,전계방출어레이 및 전계에미터캐소드

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US (1) US5939149A (ko)
EP (1) EP0802988B1 (ko)
JP (1) JPH10500936A (ko)
KR (2) KR0152251B1 (ko)
CN (1) CN1061387C (ko)
DE (1) DE69612734T2 (ko)
WO (1) WO1997016580A1 (ko)

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KR20010088087A (ko) * 2000-03-10 2001-09-26 장 진 탄소 나노튜브의 선택적 증착방법
KR100545719B1 (ko) * 1998-09-25 2006-03-31 학교법인연세대학교 교류형 플라즈마 디스플레이 패널 소자용 보호코팅층 재료

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JP3429171B2 (ja) * 1997-11-20 2003-07-22 東京エレクトロン株式会社 プラズマ処理方法及び半導体デバイスの製造方法
TW521537B (en) * 1998-05-08 2003-02-21 Idemitsu Kosan Co Organic electroluminescence element
US6338901B1 (en) 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6335086B1 (en) 1999-05-03 2002-01-01 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6261693B1 (en) 1999-05-03 2001-07-17 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
US6447891B1 (en) 1999-05-03 2002-09-10 Guardian Industries Corp. Low-E coating system including protective DLC
RU2186152C2 (ru) * 2000-02-09 2002-07-27 Закрытое акционерное общество "Патинор Коутингс Лимитед" Способ изготовления проводящей легированной алмазоподобной нанокомпозитной пленки и проводящая легированная алмазоподобная нанокомпозитная пленка
US6713179B2 (en) 2000-05-24 2004-03-30 Guardian Industries Corp. Hydrophilic DLC on substrate with UV exposure
US7998537B2 (en) * 2002-03-01 2011-08-16 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
TWI248861B (en) * 2002-08-09 2006-02-11 Maxell Hi Tec Ltd Injection molding equipment, component member used for the sake, and surface treatment method
JP4863152B2 (ja) * 2003-07-31 2012-01-25 日産自動車株式会社 歯車
JP4599908B2 (ja) * 2004-06-28 2010-12-15 ブラザー工業株式会社 Ｄｌｃ被膜除去方法
KR100601993B1 (ko) * 2005-02-17 2006-07-18 삼성전자주식회사 아크를 이용한 에미터 제조 방법 및 장치
KR100797775B1 (ko) * 2006-07-27 2008-01-24 한국과학기술연구원 다이아몬드/탄소나노물질 하이브리드 막 및 그 제조방법
US8409458B2 (en) * 2007-03-02 2013-04-02 Texas Instruments Incorporated Process for reactive ion etching a layer of diamond like carbon
KR100777043B1 (ko) * 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
JP2009127059A (ja) 2007-11-20 2009-06-11 Tokyo Denki Univ ダイヤモンドライクカーボン膜の形成方法
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KR101032795B1 (ko) * 2008-10-24 2011-05-06 정창구 Ｄｌｃ 박막이 형성된 열교환기 및 그의 제조방법
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EP0802988A1 (en) 1997-10-29
KR100245910B1 (ko) 2000-03-02
DE69612734D1 (de) 2001-06-13
KR0152251B1 (ko) 1998-10-15
KR970704919A (ko) 1997-09-06
JPH10500936A (ja) 1998-01-27
EP0802988B1 (en) 2001-05-09
DE69612734T2 (de) 2001-08-23
WO1997016580A1 (en) 1997-05-09
US5939149A (en) 1999-08-17
CN1166864A (zh) 1997-12-03

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