DE69612734T2 - Verfahren zur herstellung diamantähnlicher kohlenstoff-filme (dlc) - Google Patents

Verfahren zur herstellung diamantähnlicher kohlenstoff-filme (dlc)

Info

Publication number
DE69612734T2
DE69612734T2 DE69612734T DE69612734T DE69612734T2 DE 69612734 T2 DE69612734 T2 DE 69612734T2 DE 69612734 T DE69612734 T DE 69612734T DE 69612734 T DE69612734 T DE 69612734T DE 69612734 T2 DE69612734 T2 DE 69612734T2
Authority
DE
Germany
Prior art keywords
dlc
carbon films
producing diamond
diamond
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69612734T
Other languages
English (en)
Other versions
DE69612734D1 (de
Inventor
Jin Jang
Chang Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orion Electric Co Ltd Korea
Original Assignee
Orion Electric Co Ltd Korea
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orion Electric Co Ltd Korea filed Critical Orion Electric Co Ltd Korea
Publication of DE69612734D1 publication Critical patent/DE69612734D1/de
Application granted granted Critical
Publication of DE69612734T2 publication Critical patent/DE69612734T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/276—Diamond only using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69612734T 1995-11-02 1996-11-02 Verfahren zur herstellung diamantähnlicher kohlenstoff-filme (dlc) Expired - Fee Related DE69612734T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950039256A KR0152251B1 (ko) 1995-11-02 1995-11-02 층 .층 .층 제작 방법에 의한 유사다이아몬드 박막 제조 방법
PCT/KR1996/000192 WO1997016580A1 (en) 1995-11-02 1996-11-02 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes

Publications (2)

Publication Number Publication Date
DE69612734D1 DE69612734D1 (de) 2001-06-13
DE69612734T2 true DE69612734T2 (de) 2001-08-23

Family

ID=19432681

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69612734T Expired - Fee Related DE69612734T2 (de) 1995-11-02 1996-11-02 Verfahren zur herstellung diamantähnlicher kohlenstoff-filme (dlc)

Country Status (7)

Country Link
US (1) US5939149A (de)
EP (1) EP0802988B1 (de)
JP (1) JPH10500936A (de)
KR (2) KR0152251B1 (de)
CN (1) CN1061387C (de)
DE (1) DE69612734T2 (de)
WO (1) WO1997016580A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016200367B3 (de) * 2016-01-14 2017-02-02 Hochschule Wismar Verfahren zum Herstellen einer dünnen Schicht aus porösem DLC, Verwendung einer PECVD-Anlage und mit porösem DLC beschichtetes Werkstück

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3429171B2 (ja) * 1997-11-20 2003-07-22 東京エレクトロン株式会社 プラズマ処理方法及び半導体デバイスの製造方法
TW521537B (en) * 1998-05-08 2003-02-21 Idemitsu Kosan Co Organic electroluminescence element
KR100545719B1 (ko) * 1998-09-25 2006-03-31 학교법인연세대학교 교류형 플라즈마 디스플레이 패널 소자용 보호코팅층 재료
US6261693B1 (en) * 1999-05-03 2001-07-17 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
US6338901B1 (en) 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6335086B1 (en) 1999-05-03 2002-01-01 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6447891B1 (en) 1999-05-03 2002-09-10 Guardian Industries Corp. Low-E coating system including protective DLC
RU2186152C2 (ru) * 2000-02-09 2002-07-27 Закрытое акционерное общество "Патинор Коутингс Лимитед" Способ изготовления проводящей легированной алмазоподобной нанокомпозитной пленки и проводящая легированная алмазоподобная нанокомпозитная пленка
KR20010088087A (ko) * 2000-03-10 2001-09-26 장 진 탄소 나노튜브의 선택적 증착방법
US6713179B2 (en) 2000-05-24 2004-03-30 Guardian Industries Corp. Hydrophilic DLC on substrate with UV exposure
US7998537B2 (en) * 2002-03-01 2011-08-16 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
TWI248861B (en) * 2002-08-09 2006-02-11 Maxell Hi Tec Ltd Injection molding equipment, component member used for the sake, and surface treatment method
JP4863152B2 (ja) 2003-07-31 2012-01-25 日産自動車株式会社 歯車
JP4599908B2 (ja) * 2004-06-28 2010-12-15 ブラザー工業株式会社 Ｄｌｃ被膜除去方法
KR100601993B1 (ko) * 2005-02-17 2006-07-18 삼성전자주식회사 아크를 이용한 에미터 제조 방법 및 장치
KR100797775B1 (ko) * 2006-07-27 2008-01-24 한국과학기술연구원 다이아몬드/탄소나노물질 하이브리드 막 및 그 제조방법
US8409458B2 (en) * 2007-03-02 2013-04-02 Texas Instruments Incorporated Process for reactive ion etching a layer of diamond like carbon
KR100777043B1 (ko) * 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
JP2009127059A (ja) 2007-11-20 2009-06-11 Tokyo Denki Univ ダイヤモンドライクカーボン膜の形成方法
US8105465B2 (en) * 2008-10-14 2012-01-31 Applied Materials, Inc. Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)
KR101032795B1 (ko) * 2008-10-24 2011-05-06 정창구 Ｄｌｃ 박막이 형성된 열교환기 및 그의 제조방법
US9514932B2 (en) 2012-08-08 2016-12-06 Applied Materials, Inc. Flowable carbon for semiconductor processing
CN103382549B (zh) * 2013-07-27 2016-01-27 中国乐凯集团有限公司 一种多层结构高阻隔薄膜的制备方法
US20150104648A1 (en) * 2013-10-15 2015-04-16 Nano And Advanced Materials Institute Limited Method and Apparatus of Growing Metal-free and Low Stress Thick Film of Diamond-like Carbon
US20200354826A1 (en) * 2019-05-08 2020-11-12 Intevac, Inc. Method to produce high density diamond like carbon thin films

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
JPS61231180A (ja) * 1985-04-03 1986-10-15 Oki Electric Ind Co Ltd アモルフアス炭素薄膜のエツチング方法
US4647494A (en) * 1985-10-31 1987-03-03 International Business Machines Corporation Silicon/carbon protection of metallic magnetic structures
JPS6462484A (en) * 1987-09-02 1989-03-08 Seiko Instr & Electronics Method for flattening diamond film
JPH03153876A (ja) * 1989-11-10 1991-07-01 Shin Etsu Chem Co Ltd 炭化珪素質部材
BE1006711A3 (nl) * 1992-12-02 1994-11-22 Vito Werkwijze voor het aanbrengen van een diamantachtige koolstoflaag op staal, ijzer of legeringen daarvan.
US5431963A (en) * 1993-02-01 1995-07-11 General Electric Company Method for adhering diamondlike carbon to a substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016200367B3 (de) * 2016-01-14 2017-02-02 Hochschule Wismar Verfahren zum Herstellen einer dünnen Schicht aus porösem DLC, Verwendung einer PECVD-Anlage und mit porösem DLC beschichtetes Werkstück

Also Published As

Publication number Publication date
KR0152251B1 (ko) 1998-10-15
US5939149A (en) 1999-08-17
JPH10500936A (ja) 1998-01-27
DE69612734D1 (de) 2001-06-13
KR970704919A (ko) 1997-09-06
KR970026902A (ko) 1996-06-24
CN1061387C (zh) 2001-01-31
EP0802988A1 (de) 1997-10-29
KR100245910B1 (ko) 2000-03-02
WO1997016580A1 (en) 1997-05-09
EP0802988B1 (de) 2001-05-09
CN1166864A (zh) 1997-12-03

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee