KR970704919A - 유사다이아몬드 박막의 제조방법, 이에 따른 유사다이아몬드 박막, 이의 용도, 전계 방출 어레이 및 전계 에미터 캐소드 - Google Patents

유사다이아몬드 박막의 제조방법, 이에 따른 유사다이아몬드 박막, 이의 용도, 전계 방출 어레이 및 전계 에미터 캐소드 Download PDF

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KR970704919A
KR970704919A KR1019970700936A KR19970700936A KR970704919A KR 970704919 A KR970704919 A KR 970704919A KR 1019970700936 A KR1019970700936 A KR 1019970700936A KR 19970700936 A KR19970700936 A KR 19970700936A KR 970704919 A KR970704919 A KR 970704919A
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박규창
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Abstract

본 발명은 1 내지 100 나노미터 두께의 유사다이아몬드 층을 기판이나 전계 방출 어레이 상에 증착한 뒤, 플루오르화물 가스를 포함하는 에칭 플라즈마에 노출시키며, 이 단계에서 기판에 포함된 수소가 플루오르의 화학적 에칭 작용으로 제거되고, 소정 두께의 유사다이아몬드 박막을 얻기 위하여 수소가 없는 유사다이아몬드를 제조하는 방법이 반복되는 것을 특징으로 하는 유사다이아몬드의 제조방법에 관련된다.

Description

유사다이아몬드 박막의 제조방법, 이에 따른 유사다이아몬드 박막, 이의 용도, 전계 방출 어레이 및 전계 에미터 캐소드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a 내지 2b는 본 발명에 따른 유사다이아몬드 층의 형성 단계를 나타낸다.
제2b도는 본 발명에 따른 유사다이아몬드 층의 형성 단계를 나타낸다.

Claims (20)

  1. (1) 기판상에 소정의 두께를 갖는 유사다이아몬드 층을 성장시키는 단계와; (2) 상기 유사다이아몬드 층의 성장후 유사다이아몬드 층의 표면을 에칭 플라즈마에 노출시키는 것을 특징으로 하는 유사다이아몬드 박막의 제조방법.
  2. 제1항에 있어서, 소정 두께의 유사다이아몬드 박막을 얻기 위하여 이미 형성된 유사다이아몬드 층상에 상기 단계를 다시 순차적으로 반복하는 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 에칭 플라즈마는 플루오르화물 가스를 포함하는 것을 특징으로 하는 방법.
  4. 제3항에 있어서, 상기 플루오르화물 가스는 플루오르화 탄소인 것을 특징으로 하는 방법.
  5. 제4항에 있어서, 상기 플루오르화 탄소는 CF4인 것을 특징으로 하는 방법.
  6. 제1항에 있어서, 상기 유사다이아몬드 층의 두께는 1 내지 100 나노미터인 것을 특징으로 하는 방법.
  7. 제1항에 있어서, 상기 유사다이아몬드 층의 두께는 5 내지 20 나노미터인 것을 특징으로 하는 방법.
  8. 제1항에 있어서, 상기 유사다이아몬드 층은 에칭 플라즈마에 1 내지 200초 동안 노출되는 것을 특징으로 하는 방법.
  9. 제1항에 있어서, 상기 유사다이아몬드 층은 에칭 플라즈마에 50 내지 100초 동안 노출되는 것을 특징으로 하는 방법.
  10. 제1항에 있어서, 상기 유사다이아몬드 층은 증착 플라즈마를 사용한 플라즈마 화학 가상 증착법으로 성장되는 것을 특징으로 하는 방법,
  11. 제10항에 있어서, 유사다이아몬드 층을 성장시키기 위한 wmd착 플라즈마는 CH4, H2, He를 포함하는 것을 특징으로 하는 방법.
  12. 제10항에 있어서, 상기 에칭 플라즈마는 CF4및 He를 포함하는 것을 특징으로 하는 방법.
  13. 제1항의 방법으로 제조되는 것을 특징으로 하는 유사다이아몬드 박막.
  14. 제13항에 있어서, 이미 형성된 유사다이아몬드 층의 표면상에 하나 이상의 유사다이아몬드 층이 형성되는 것을 특징으로 하는 유사다이아몬드 박막.
  15. 제13항에 있어서, 전계 방출 캐소드로서 유사다이아몬드 박막의 용도.
  16. 제1항의 방법에 의해 제조된 유사다이아몬드 박막을 포함하는 것을 특징으로 하는 전계 방출 어레이.
  17. 제16항에 있어서, 소정 두께의 유사다이아몬드 박막을 얻기 위해 이미 형성된 유사다이아몬드 층의 표면상에 하나 이상의 유사다이아몬드 층이 형성되는 것을 특징으로 하는 전계 방출 어레이.
  18. 제16항에 있어서, 상기 전계 방출 어레이는 전계 방출 디스프레이에 사용되는 몰리브덴 팁 전계 방출 어레이인 것을 특징으로 하는 전계 방출 어레이.
  19. 제1항의 방법으로 형성되는 유사다이아몬드 박막을 포함하는 것을 특징으로 하는 전계 방출 디스플레이용 전계 방출 캐소드.
  20. 제19항의 방법에 있어서, 소정 두께의 유사다이아몬드 박막을 얻기 위해 이미 형성된 유사다이아몬드 층의 표면상에 하나 이상의 유사다이아몬드 층이 형성되는 것을 특징으로 하는 전계 방출 캐소드.
KR1019970700936A 1995-11-02 1996-11-02 유사 다이아몬드박막의 제조방법,이에 따른 유사 다이아몬드박막,전계방출어레이 및 전계에미터캐소드 KR100245910B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR39256/1995 1995-11-02
KR1019950039256 1995-11-02
KR1019950039256A KR0152251B1 (ko) 1995-11-02 1995-11-02 층 .층 .층 제작 방법에 의한 유사다이아몬드 박막 제조 방법
PCT/KR1996/000192 WO1997016580A1 (en) 1995-11-02 1996-11-02 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes

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KR970704919A true KR970704919A (ko) 1997-09-06
KR100245910B1 KR100245910B1 (ko) 2000-03-02

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KR1019950039256A KR0152251B1 (ko) 1995-11-02 1995-11-02 층 .층 .층 제작 방법에 의한 유사다이아몬드 박막 제조 방법
KR1019970700936A KR100245910B1 (ko) 1995-11-02 1996-11-02 유사 다이아몬드박막의 제조방법,이에 따른 유사 다이아몬드박막,전계방출어레이 및 전계에미터캐소드

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US (1) US5939149A (ko)
EP (1) EP0802988B1 (ko)
JP (1) JPH10500936A (ko)
KR (2) KR0152251B1 (ko)
CN (1) CN1061387C (ko)
DE (1) DE69612734T2 (ko)
WO (1) WO1997016580A1 (ko)

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KR970026902A (ko) 1996-06-24
CN1166864A (zh) 1997-12-03
KR0152251B1 (ko) 1998-10-15
DE69612734T2 (de) 2001-08-23
US5939149A (en) 1999-08-17
WO1997016580A1 (en) 1997-05-09
EP0802988B1 (en) 2001-05-09
DE69612734D1 (de) 2001-06-13
KR100245910B1 (ko) 2000-03-02
EP0802988A1 (en) 1997-10-29
CN1061387C (zh) 2001-01-31

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