JPS6462484A - Method for flattening diamond film - Google Patents

Method for flattening diamond film

Info

Publication number
JPS6462484A
JPS6462484A JP22005287A JP22005287A JPS6462484A JP S6462484 A JPS6462484 A JP S6462484A JP 22005287 A JP22005287 A JP 22005287A JP 22005287 A JP22005287 A JP 22005287A JP S6462484 A JPS6462484 A JP S6462484A
Authority
JP
Japan
Prior art keywords
diamond film
flattening
flattened
synthesized
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22005287A
Other languages
Japanese (ja)
Inventor
Yukitsugu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP22005287A priority Critical patent/JPS6462484A/en
Publication of JPS6462484A publication Critical patent/JPS6462484A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To remarkably improve the flatness of a diamond film having high crystallinity by flattening the surface of a flattening layer formed on the diamond film and etching the flattened surface. CONSTITUTION:A diamond film 2 having high crystallinity is synthesized on a substrate 1. A flattening layer such as an amorphous carbon film 3 is synthesized on the diamond film 2 and the surface of the layer is flattened. The flattened surface is then etched, e.g., by generating hydrogen plasma. Thus, a high quality diamond film having very high flatness is obtd.
JP22005287A 1987-09-02 1987-09-02 Method for flattening diamond film Pending JPS6462484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22005287A JPS6462484A (en) 1987-09-02 1987-09-02 Method for flattening diamond film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22005287A JPS6462484A (en) 1987-09-02 1987-09-02 Method for flattening diamond film

Publications (1)

Publication Number Publication Date
JPS6462484A true JPS6462484A (en) 1989-03-08

Family

ID=16745172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22005287A Pending JPS6462484A (en) 1987-09-02 1987-09-02 Method for flattening diamond film

Country Status (1)

Country Link
JP (1) JPS6462484A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2253416A (en) * 1991-02-21 1992-09-09 De Beers Ind Diamond Radiation absorber comprising a CVD diamond film having special surface characteristics
EP0615004A1 (en) * 1993-03-10 1994-09-14 Sumitomo Electric Industries, Limited Method of polishing/flattening diamond
EP0741118A3 (en) * 1995-05-05 1997-05-07 Saint Gobain Norton Ind Cerami Method of synthetic diamond ablation with an oxygen plasma and synthetic diamonds etched accordingly
US5939149A (en) * 1995-11-02 1999-08-17 Orion Electric Co., Ltd. Method of forming hydrogen-free diamond like carbon (DLC) films

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2253416A (en) * 1991-02-21 1992-09-09 De Beers Ind Diamond Radiation absorber comprising a CVD diamond film having special surface characteristics
EP0615004A1 (en) * 1993-03-10 1994-09-14 Sumitomo Electric Industries, Limited Method of polishing/flattening diamond
US5500077A (en) * 1993-03-10 1996-03-19 Sumitomo Electric Industries, Ltd. Method of polishing/flattening diamond
EP0741118A3 (en) * 1995-05-05 1997-05-07 Saint Gobain Norton Ind Cerami Method of synthetic diamond ablation with an oxygen plasma and synthetic diamonds etched accordingly
US5939149A (en) * 1995-11-02 1999-08-17 Orion Electric Co., Ltd. Method of forming hydrogen-free diamond like carbon (DLC) films

Similar Documents

Publication Publication Date Title
EP0456479A3 (en) Pattern forming process, apparatus for forming said pattern and process for preparing semiconductor device utilizing said pattern forming process
MY111046A (en) Method for preparing semiconductor member.
MY113920A (en) Process for producing semiconductor substrate
CA2139187A1 (en) Semiconductor Substrate and Process for Producing Same
EP0155668A3 (en) Plasma sculpturing with a non-planar sacrificial layer
EP0785475A3 (en) Light receiving member having a surface protective layer with a specific outermost surface and process for the production thereof
EP0630058A3 (en) Process for forming an arrangement of pyrodetectors by electrochemically etching a silicon substrate.
EP0841677A4 (en) Electron emitting device and process for producing the same
KR900002403A (en) Method of manufacturing X-ray lithography mask using amorphous carbon support film
TW353152B (en) Method of producing liquid crystal display device
JPS6462484A (en) Method for flattening diamond film
ES8403243A1 (en) Thermionic cathode and manufacturing method.
EP0420590A3 (en) Process for forming deposited film and process for producing semiconductor device
MY110288A (en) Process for forming deposited film and process for preparing semiconductor device.
JPS5730337A (en) Formation of surface protecting film for semiconductor
JPS5650514A (en) Formation of fine pattern
JPS56122122A (en) Manufacture of amorphous semiconductor
JPS57201026A (en) Manufacture of semiconductor device
JPS57201015A (en) Manufacture of semiconductor device
TW344869B (en) Etching method, crystal growing method, and process for producing semiconductor device
JPS55162244A (en) Forming method of metal wiring
KR960012652B1 (en) Fabricating method of high purity region
JPS56130924A (en) Manufacture of semiconductor device
JPS53123660A (en) Epitaxial growth method
KR960012636B1 (en) Method for fabricating the bonding pad of a semiconductor element