KR970003434A - 스퍼터링장치 - Google Patents

스퍼터링장치 Download PDF

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Publication number
KR970003434A
KR970003434A KR1019960025705A KR19960025705A KR970003434A KR 970003434 A KR970003434 A KR 970003434A KR 1019960025705 A KR1019960025705 A KR 1019960025705A KR 19960025705 A KR19960025705 A KR 19960025705A KR 970003434 A KR970003434 A KR 970003434A
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KR
South Korea
Prior art keywords
target
disposed
magnet
linear
sputtering
Prior art date
Application number
KR1019960025705A
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English (en)
Other versions
KR100244385B1 (ko
Inventor
무네카즈 니시하라
테이이치 키무라
이사무 아오쿠라
Original Assignee
모리시타 요이찌
마쯔시다덴기산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 모리시타 요이찌, 마쯔시다덴기산교 가부시기가이샤 filed Critical 모리시타 요이찌
Publication of KR970003434A publication Critical patent/KR970003434A/ko
Application granted granted Critical
Publication of KR100244385B1 publication Critical patent/KR100244385B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

본 발명은, 대면적의 각형 기판에서 안정성막을 실현할 수 있다. 정지대향방식의 스퍼터링장치의 제공을 목적으로 한 것이며, 그 구성에 있어서, 타겟(1a), (1b), (1c)를 평면내에서 서로 전기적으로 절연된 3개 이상의 각형 전극판위에 분할해서 배치하는 동시에, 각 타겟(1a), (1b), (1c)에 대응시켜서 각 타겟(1a), (1b), (1c)의 표면에 소정의 자력선(5)을 발생시키는 마그넷(2a), (2b), (2c)을 배치한 것을 특징으로 한 것이다.

Description

스퍼터링장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 있어서의 스퍼터링장치의 기본구성의 사시단면도.

Claims (4)

  1. 가스공급 및 배기기능을 가진 진공용기내에, 기판지지부에 설치된 평판형상의 각 형기판과, 기판에 대향한 평면내에 전원과 접속된 전극에 설치된 평면형상의 타겟을 가지고, 기판을 타겟에 대해서 정지(靜止)한 상태에서 성막하는 스퍼터링장치에 있어서, 상기 타겟을 평면내에서 서로 전기적으로 절연된 3개 이상의 각형 전극판위에 분할해서 배치하는 동시에, 각 타겟에 대응시켜서 각 타겟의 표면에 소정의 자력선을 발생시키는 마그넷을 배치한 것을 특징으로 하는 스퍼터링장치.
  2. 제1항에 있어서, 타겟면위에 직선형상 및 원호형상의 조합에 의해 구성되는 링형상의 폐쇄된 전자의 드리프트운동을 형성시키기 위한 마그넷을, 각 타겟의 이면의 각각에 배치한 것을 특징으로 하는 스퍼터링장치.
  3. 제2항에 있어서, 타겟면위에 전자의 드리프트운동에 의해서 발생되는 타겟위의 침식부분의 형상에 있어서, 타겟위의 직선형상 사이의 간격 및 각형전극판 사이의 피치가 기판과 타겟표면과의 거리가 90%로부터 110%의 범위내인 것을 특징으로 하는 스퍼터링장치.
  4. 제1항에 있어서, 각 각형전극 및 타겟의 양사이드에 직선형상의 마그넷을 배치한 것을 특징으로 하는 스퍼터링장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960025705A 1995-06-29 1996-06-29 스퍼터링장치 및 방법 KR100244385B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-163166 1995-06-29
JP16316695A JP3403550B2 (ja) 1995-06-29 1995-06-29 スパッタリング装置とスパッタリング方法

Publications (2)

Publication Number Publication Date
KR970003434A true KR970003434A (ko) 1997-01-28
KR100244385B1 KR100244385B1 (ko) 2000-02-01

Family

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KR1019960025705A KR100244385B1 (ko) 1995-06-29 1996-06-29 스퍼터링장치 및 방법

Country Status (4)

Country Link
US (1) US6217714B1 (ko)
JP (1) JP3403550B2 (ko)
KR (1) KR100244385B1 (ko)
CN (1) CN1147619C (ko)

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DE10122431A1 (de) * 2001-05-09 2002-11-28 Fraunhofer Ges Forschung Elektrodenanordnung für die magnetfeldgeführte plasmagestützte Abscheidung dünner Schichten im Vakuum
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KR101885123B1 (ko) * 2017-03-31 2018-08-03 한국알박(주) 마그네트론 스퍼터링 장치의 자석 제어 시스템
JP7082552B2 (ja) * 2018-09-21 2022-06-08 株式会社アルバック スパッタリング装置、薄膜製造方法
JP2022006497A (ja) * 2020-06-24 2022-01-13 東京エレクトロン株式会社 成膜装置及び成膜方法

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Also Published As

Publication number Publication date
CN1147619C (zh) 2004-04-28
KR100244385B1 (ko) 2000-02-01
JPH0913169A (ja) 1997-01-14
JP3403550B2 (ja) 2003-05-06
CN1143690A (zh) 1997-02-26
US6217714B1 (en) 2001-04-17

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