KR970023538A - 화학증착법에 의한 기판코팅장치 - Google Patents
화학증착법에 의한 기판코팅장치 Download PDFInfo
- Publication number
- KR970023538A KR970023538A KR1019960049383A KR19960049383A KR970023538A KR 970023538 A KR970023538 A KR 970023538A KR 1019960049383 A KR1019960049383 A KR 1019960049383A KR 19960049383 A KR19960049383 A KR 19960049383A KR 970023538 A KR970023538 A KR 970023538A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- compartments
- compartment
- cathode
- source
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
2개의 마그네트론 음극(4, 5)와 연결된 교류전원(3)으로 구성되고, 교류전원(3)의 한 극(8)은 음극(4)에, 그리고 다른 극(9)은 다른 음극(5)에 각각 공급도선(10, 11)에 의해 연결되는 플라즈마 CVD(제1도)에 의해 기판(2)을 코팅하기 위한 장치에서, 두 음극(4, 5)은 고유의 구획(12, 13)에 배치되고, 양구획은 진공원(21)에 연결된 제3구획(14)을 중간에 둘러싸고 있다. 외측에 있는 양구획(12, 13)은 이것을 분리하는 벽(17, 18)에 있는 개구부(15, 16) 또는 슬릿에 의해 서로 연결되고, 제3구획(14)에 배치된 기판(2)은 기본적으로 반응가스입구부(19)와 시준기(20)로 이루어진 CVD원으로 향하게 되어 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명의 여러 실시 형태 중 평면기판을 위한 2개의 코팅설비를 도식적으로 도시한 도면.
Claims (2)
- 타겟(6,7)과 전기적으로 함께 작용하는 2개의 자석으로 둘러싸인 음극(4,5)과 연결된 교류전원(3), 예컨대 평균주파수 발생기로 구성되고, 교류전원(3)의 한 극(8)은 음극(4)에, 그리고 다른 극(9)은 다른 음극(5)에 각각 공급도선(10,11)에 의해 연결되는 플라즈마 CVD에 의해 기판(2)을 코팅하기 위한 장치에 있어서, 각각의 두 음극(4,5)이 고유의 챔버 또는 구획(12,13)에 배치되고 그리고 양구획은 진공원(21)에 연결된 제3구획(14)을 둘러싸고 그리고 각각 구획(12,14 및 13,14)을 따로 분리하는 벽(17,18)에 있는 개구부(15,16)또는 슬릿을 통해 서로 연결되고, 제3구획(14)에 포함된 기판(2)은 기본적으로 반응가스 입구부(19)와 시준기(20)로 이루어진 CVD원으로 향하는 것을 특징으로 하는 기판코팅장치.
- 제1항에 있어서, CVD원의 반응가스입구부(19)는 기판(2)쪽을 향한 노즐(22, 22', ...)을 갖춘 관으로 이루어진 격자로서 형성되어 있고 그리고 격자는 기판(2)의 평면에 평행한 평면에 유지되어 있고, 격벽(17, 18)에 있는 슬릿(15, 16)은 격자와 기판(2)으로 형성된 중간공간(27)과 통해 있고 그리고 구획(14)의 양측면에 배치된 구획(12, 13)에 있는 음극(4, 5)의 타겟(6, 7)은 격벽(17, 18)에 대향한 측벽(23, 24)또는 베이스부나 커버부(25 또는 26)쪽으로 향하고 있는 것을 특징으로 하는 기판코팅장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19540543.9 | 1995-10-31 | ||
DE19540543A DE19540543A1 (de) | 1995-10-31 | 1995-10-31 | Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970023538A true KR970023538A (ko) | 1997-05-30 |
KR100212165B1 KR100212165B1 (ko) | 1999-08-02 |
Family
ID=7776263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960049383A KR100212165B1 (ko) | 1995-10-31 | 1996-10-29 | 화학증착법에 의한 기판코팅장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5803973A (ko) |
EP (1) | EP0782173B1 (ko) |
JP (1) | JPH09186150A (ko) |
KR (1) | KR100212165B1 (ko) |
DE (2) | DE19540543A1 (ko) |
ES (1) | ES2270432T3 (ko) |
TW (1) | TW364146B (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6267074B1 (en) * | 1997-02-24 | 2001-07-31 | Foi Corporation | Plasma treatment systems |
US6499425B1 (en) * | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
WO2000071340A1 (en) * | 1999-05-20 | 2000-11-30 | Sport Court, Inc. | Method and apparatus for coating a floor tile |
DE19928876A1 (de) * | 1999-06-24 | 2000-12-28 | Leybold Systems Gmbh | Vorrichtung zur lokalen Erzeugung eines Plasmas in einer Behandlungskammer durch Mikrowellenanregung |
US6562414B2 (en) | 2001-10-10 | 2003-05-13 | Sport Court, Inc. | Method of coating polyolefin floor tile |
US20040058089A1 (en) * | 2001-10-10 | 2004-03-25 | Sport Court, Inc. | Floor tile coating method and system |
US6887341B2 (en) * | 2001-11-13 | 2005-05-03 | Tokyo Electron Limited | Plasma processing apparatus for spatial control of dissociation and ionization |
US20030185973A1 (en) * | 2002-03-30 | 2003-10-02 | Crawley Richard L. | Water vapor plasma method of increasing the surface energy of a surface |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
US7748177B2 (en) | 2004-02-25 | 2010-07-06 | Connor Sport Court International, Inc. | Modular tile with controlled deflection |
US7849642B2 (en) | 2004-03-12 | 2010-12-14 | Connor Sport Court International, Inc. | Tile with wide coupling configuration and method for the same |
US8397466B2 (en) | 2004-10-06 | 2013-03-19 | Connor Sport Court International, Llc | Tile with multiple-level surface |
US8407951B2 (en) | 2004-10-06 | 2013-04-02 | Connor Sport Court International, Llc | Modular synthetic floor tile configured for enhanced performance |
USD656250S1 (en) | 2005-03-11 | 2012-03-20 | Connor Sport Court International, Llc | Tile with wide mouth coupling |
JP5694183B2 (ja) * | 2008-12-08 | 2015-04-01 | ジェネラル・プラズマ・インコーポレーテッド | 自己浄化アノードを含む閉ドリフト磁場イオン源装置および同装置による基板改質プロセス |
JP5517509B2 (ja) * | 2009-07-08 | 2014-06-11 | 三菱重工業株式会社 | 真空処理装置 |
JP5721362B2 (ja) * | 2010-08-06 | 2015-05-20 | 三菱重工業株式会社 | 真空処理装置およびプラズマ処理方法 |
JP5622477B2 (ja) * | 2010-08-06 | 2014-11-12 | 三菱重工業株式会社 | 真空処理装置 |
WO2012017717A1 (ja) * | 2010-08-06 | 2012-02-09 | 三菱重工業株式会社 | 真空処理装置及びプラズマ処理方法 |
JP5613641B2 (ja) * | 2011-09-12 | 2014-10-29 | 東芝三菱電機産業システム株式会社 | プラズマ発生装置およびcvd装置 |
TWI575091B (zh) * | 2015-08-13 | 2017-03-21 | A vapor deposition device with collimator tube | |
WO2019004188A1 (ja) | 2017-06-27 | 2019-01-03 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
WO2019003312A1 (ja) | 2017-06-27 | 2019-01-03 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
CN114373669A (zh) | 2017-06-27 | 2022-04-19 | 佳能安内华股份有限公司 | 等离子体处理装置 |
CN114666965A (zh) | 2017-06-27 | 2022-06-24 | 佳能安内华股份有限公司 | 等离子体处理装置 |
SG11202009122YA (en) * | 2018-06-26 | 2020-10-29 | Canon Anelva Corp | Plasma processing apparatus, plasma processing method, program, and memory medium |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58221275A (ja) * | 1982-06-16 | 1983-12-22 | Anelva Corp | スパツタリング装置 |
DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
CH665057A5 (de) * | 1984-07-20 | 1988-04-15 | Balzers Hochvakuum | Targetplatte fuer kathodenzerstaeubung. |
CH669609A5 (ko) * | 1986-12-23 | 1989-03-31 | Balzers Hochvakuum | |
KR910007382B1 (ko) * | 1987-08-07 | 1991-09-25 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 재료 및 초전도 박막의 제조방법 |
US4931158A (en) * | 1988-03-22 | 1990-06-05 | The Regents Of The Univ. Of Calif. | Deposition of films onto large area substrates using modified reactive magnetron sputtering |
JPH01268869A (ja) * | 1988-04-20 | 1989-10-26 | Fuji Photo Film Co Ltd | スパッタリング装置 |
FR2631488B1 (fr) * | 1988-05-10 | 1990-07-27 | Thomson Hybrides Microondes | Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication |
JPH01293521A (ja) * | 1988-05-20 | 1989-11-27 | Mitsubishi Electric Corp | プラズマ処理方法及びプラズマ処理装置 |
US5635036A (en) * | 1990-01-26 | 1997-06-03 | Varian Associates, Inc. | Collimated deposition apparatus and method |
JP2980956B2 (ja) * | 1990-08-19 | 1999-11-22 | 日本真空技術株式会社 | 高周波プラズマcvd装置 |
US5126033A (en) * | 1990-12-31 | 1992-06-30 | Leybold Aktiengesellschaft | Process and apparatus for reactively coating a substrate |
DE4106770C2 (de) * | 1991-03-04 | 1996-10-17 | Leybold Ag | Verrichtung zum reaktiven Beschichten eines Substrats |
DE4109018C2 (de) * | 1991-03-20 | 2002-02-28 | Unaxis Deutschland Holding | Vorrichtung zum Beschichten eines Substrats |
JPH04326725A (ja) * | 1991-04-26 | 1992-11-16 | Tokyo Electron Ltd | プラズマ装置 |
US5240584A (en) * | 1991-11-07 | 1993-08-31 | Leybold Aktiengesellschaft | Apparatus for the reactive coating of a substrate |
DE4204999A1 (de) * | 1991-11-26 | 1993-08-26 | Leybold Ag | Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten |
DE4201551C2 (de) * | 1992-01-22 | 1996-04-25 | Leybold Ag | Zerstäubungskathode |
US5490910A (en) * | 1992-03-09 | 1996-02-13 | Tulip Memory Systems, Inc. | Circularly symmetric sputtering apparatus with hollow-cathode plasma devices |
DE4237517A1 (de) * | 1992-11-06 | 1994-05-11 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten |
DE4239843A1 (de) * | 1992-11-27 | 1994-06-01 | Leybold Ag | Vorrichtung für die Erzeugung von Plasma, insbesondere zum Beschichten von Substraten |
DE4326100B4 (de) * | 1993-08-04 | 2006-03-23 | Unaxis Deutschland Holding Gmbh | Verfahren und Vorrichtung zum Beschichten von Substraten in einer Vakuumkammer, mit einer Einrichtung zur Erkennung und Unterdrückung von unerwünschten Lichtbögen |
JP2592217B2 (ja) * | 1993-11-11 | 1997-03-19 | 株式会社フロンテック | 高周波マグネトロンプラズマ装置 |
US5628889A (en) * | 1994-09-06 | 1997-05-13 | International Business Machines Corporation | High power capacity magnetron cathode |
JP3339200B2 (ja) * | 1994-09-28 | 2002-10-28 | ソニー株式会社 | プラズマ発生装置、プラズマ加工方法および薄膜トランジスタの製造方法 |
-
1995
- 1995-10-31 DE DE19540543A patent/DE19540543A1/de not_active Withdrawn
-
1996
- 1996-07-19 DE DE59611377T patent/DE59611377D1/de not_active Expired - Lifetime
- 1996-07-19 EP EP96111651A patent/EP0782173B1/de not_active Expired - Lifetime
- 1996-07-19 ES ES96111651T patent/ES2270432T3/es not_active Expired - Lifetime
- 1996-09-11 TW TW085111090A patent/TW364146B/zh not_active IP Right Cessation
- 1996-10-03 US US08/725,156 patent/US5803973A/en not_active Expired - Lifetime
- 1996-10-29 JP JP8287100A patent/JPH09186150A/ja active Pending
- 1996-10-29 KR KR1019960049383A patent/KR100212165B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0782173B1 (de) | 2006-08-16 |
DE19540543A1 (de) | 1997-05-07 |
DE59611377D1 (de) | 2006-09-28 |
JPH09186150A (ja) | 1997-07-15 |
KR100212165B1 (ko) | 1999-08-02 |
ES2270432T3 (es) | 2007-04-01 |
EP0782173A2 (de) | 1997-07-02 |
TW364146B (en) | 1999-07-11 |
US5803973A (en) | 1998-09-08 |
EP0782173A3 (de) | 1999-02-17 |
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