KR860004163A - 성막 지향성을 고려한 스팟타링 장치 - Google Patents

성막 지향성을 고려한 스팟타링 장치 Download PDF

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Publication number
KR860004163A
KR860004163A KR1019850008419A KR850008419A KR860004163A KR 860004163 A KR860004163 A KR 860004163A KR 1019850008419 A KR1019850008419 A KR 1019850008419A KR 850008419 A KR850008419 A KR 850008419A KR 860004163 A KR860004163 A KR 860004163A
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South Korea
Prior art keywords
target
film
spot
spotting
directivity
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KR1019850008419A
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English (en)
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KR900001825B1 (ko
Inventor
마사오 사가다 (외 5)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Priority claimed from JP59238358A external-priority patent/JPS61117276A/ja
Priority claimed from JP23835484A external-priority patent/JPH0660390B2/ja
Application filed by 미쓰다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR860004163A publication Critical patent/KR860004163A/ko
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Publication of KR900001825B1 publication Critical patent/KR900001825B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3327—Coating high aspect ratio workpieces

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

성막 지향성을 고려한 스팟타링 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예를 도시한 도면.
제3도, 제4도는 성막후의 단차를 설명하기 위한 단면도.

Claims (4)

  1. 스팟타링 현상을 일으키는 프라스마를 발생시키는데 필요한 소정의 부압(負壓)환경을 일으키고, 또한 유지하기 위한 진공배기 수단과, 상기 프라스마를 주로 발생시키기 위한 희석(稀釋)까스를 도입하고 소정의 유량을 유지하기 위한 희석가스 공급수단과, 주로 상기 희석가스를 여기하여, 상기 프라스마를 발생시켜서 상기 스팟타링 현상을 일으키기 위한 전력을 공급하는 고주파 전력공급 수단과, 상기 스팟타링 현상에 의해서, 상기 희석가스의 구성입자에 의해 때려져서 피성막 재료인 스팟타링 입자를 방출하는 타겟트와, 발생한 프라스마를 상기 타겟트의 소정의 위치로 유지하기 위한 자계발생 수단과, 상기 타겟트에 대향하여 배치된 성막대상 기판을 유지하는 기판 유지 공구를 가진 뿌레나 마구네토론 스팟타링 성막장치에 있어서, 상기 성막 대상 기판 401; 제1도, 2;제17도와, 이에 대향하는 상기 타겟트 200;제1도 표면과의 사이에, 그 타겟트에서 때려저 나오는 스팟타링 입자의 일부의 비정(飛程)을 차단하는 벽 201;203;제1도;제2도;제5도에서 제11도까지, 12; 제17도; 제18도; 제19도를 마련한 것을 특징으로 하는 성막 지향성을 고려한 스팟타링장치.
  2. 특허청구의 범위 제1항의 성막 지향성을 고려하는 스팟타링 장치에 있어서, 상기 스팟타링 입자의 일부의 비정을 차단하는 벽은, 상기 타겟트 자체에 형성된 요부의 측벽, 201;203; 제1도; 제2도; 제5도에서 제11도까지, 제15도; 제16도; 제22도인 것을 특징으로 하는 성막 지향성을 고려한 스팟타링장치.
  3. 특허청구의 범위 제2항의 성막지향성을 고려하는 스팟타링장치에 있어서, 상기 타겟트 자체에 형성된 요부의 형상은, 그 요부와, 등가인 다수개의 기둥 a; 제15도, a1',a2'; 제16도의 조합에 의해서 실현되는 것을 특징으로 하는 성막지향성을 고려한 스팟타링장치.
  4. 특허청구의 범위 제1항의 성막 지향성을 고려하는 스팟타링 장치에 있어서, 상기 스팟타링 입자의 일부의 비정을 차단하는 벽은, 상기 성막 대상 기판의 근방에 배치된 후레임 12; 제17도; 제18도; 제19도이고, 상기 타겟트는, 그 외주부에 웰 14; 제17도; 제18도를 가진것을 특징으로 하는 성막 지향성을 고려한 스팟타링 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850008419A 1984-11-14 1985-11-12 성막 지향성을 고려한 스퍼터링장치 KR900001825B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP59238358A JPS61117276A (ja) 1984-11-14 1984-11-14 スパツタリング用タ−ゲツト
JP23835484A JPH0660390B2 (ja) 1984-11-14 1984-11-14 プレーナマグネトロン方式の微小孔を有する成膜対象基板への成膜方法およびその装置
JP59-238358 1984-11-14
JP59-238354 1984-11-14

Publications (2)

Publication Number Publication Date
KR860004163A true KR860004163A (ko) 1986-06-18
KR900001825B1 KR900001825B1 (ko) 1990-03-24

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Country Status (4)

Country Link
US (1) US4724060A (ko)
EP (1) EP0187226B1 (ko)
KR (1) KR900001825B1 (ko)
DE (1) DE3575811D1 (ko)

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Also Published As

Publication number Publication date
EP0187226A3 (en) 1987-04-08
US4724060A (en) 1988-02-09
EP0187226A2 (en) 1986-07-16
KR900001825B1 (ko) 1990-03-24
EP0187226B1 (en) 1990-01-31
DE3575811D1 (de) 1990-03-08

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