KR960026980A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR960026980A
KR960026980A KR1019950049535A KR19950049535A KR960026980A KR 960026980 A KR960026980 A KR 960026980A KR 1019950049535 A KR1019950049535 A KR 1019950049535A KR 19950049535 A KR19950049535 A KR 19950049535A KR 960026980 A KR960026980 A KR 960026980A
Authority
KR
South Korea
Prior art keywords
laser light
semiconductor device
manufacturing
linear
line direction
Prior art date
Application number
KR1019950049535A
Other languages
English (en)
Other versions
KR100326885B1 (ko
Inventor
슌페이 야마자끼
나오또 구스모또
고이치로 다나까
Original Assignee
슌페이 야마자끼
한도타이 에네루기 겐큐쇼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 슌페이 야마자끼, 한도타이 에네루기 겐큐쇼 가부시끼가이샤 filed Critical 슌페이 야마자끼
Publication of KR960026980A publication Critical patent/KR960026980A/ko
Application granted granted Critical
Publication of KR100326885B1 publication Critical patent/KR100326885B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

레이저 광 방사호 방사해서 반도체 장치를 제조할 때, 선형 레이저 광이 라인에 수직인 방향에서 스캔되는 동안, 어닐링은 반도체 재료에 대해 수행된다. 상기 상태에서, 라인방향에 대응하는 빔 횡방향에서 어닐링 효과가 스캐닝 방향에서의 그것과 2배 이상 다르기 때문에, 복수의 반도체 소자는 선형 레이저 광이 방사되는 라인 방향에 따라 형성된다. 또한 박막 트랜지스터의 소스 및 드레인 영역을 연결하는 라인방향은 선형 레이저 광의 라인 방향으로 정렬된다.

Description

반도체 장치 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 능동 매트릭스형 액정 표시 장치의 개략도, 제5도는 유리 기판상에 형성된 박막 트랜지스터(TFT)의 패턴과 레이저 광의 방사상태 도시도, 제6A 및 제6B도는 TET 패턴의 개략도.

Claims (20)

  1. 반도체 장치 제조 방법에 있어서, 선형 레이저 광을 반도체 박막으로 방사시킴으로써, 어닐링을 수행하는 단계와, 선형 레이저 광이 방사되는 영역의 길이 방향에 따라 복수의 반도체 장치를 제조하는 단계를 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
  2. 반도체 장치 제조 방법에 있어서, 선형 레이저 광을 방사하는 단계를 구비하며, 여기서 선형 레이저 광이 선형 레이저 광의 라인 방향을 반도체 장치의 라인 방향으로 정렬시킴으로써 복수의 반도체 장치가 적어도 하나의 라인 방향에 따라 형성되는 영역으로 방사되는 것을 특징으로 하는 반도체 장치의 제조 방법.
  3. 반도체 장치 제조 방법에 있어서, 선형 패턴을 갖는 레이저 광을 박막 트랜지스터에서 형성되는 소스영역 및 드렝인 영역을 연결하는 방향을 따라 반도체 막막으로 방사하는 단계를 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
  4. 반도체 장치 제조 방법에 있어서, 선형 레이저 광을 반도체 박막으로 방사하는 단계와, 선형 레이저광의 라인 방향을 따라 소스 및 드레인 영역을 갖는 박막 트랜지스터를 제조하는 단계를 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
  5. 반도체 장치에 제조 방법에 있어서, 선형 레이저 광을 반도체 박막으로 방사하는 단계와, 캐리어가 선형 레이저 광의 라인 방향을 따라 이동하는, 반도체 장치를 제조하는 단계를 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
  6. 반도체 장치에 제조 방법에 있어서, 하나의 전도성 형태를 박막 트랜지스터의 소스 및 드레인 영역으로 제공하는 불순물 이온을 도입하는 단계와, 소스 및 영역 및 드레인 영역을 연결하는 방향을 따라 선형 레이저광을 방사하는 단계를 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
  7. 제1항에 있어서, 선형 레이저 광이 엑시머 레이저 광을 광 시스템에 의해 선형 패턴으로 형성함으로서 얻어지는 것을 특징으로 하는 반도체 장치의 제조 방법.
  8. 제2항에 있어서, 선형 레이저 광이 엑시머 레이저 광을 광 시스템에 의해 선형 패턴으로 형성함으로서 얻어지는 것을 특징으로 하는 반도체 장치의 제조 방법.
  9. 제3항에 있어서, 선형 레이저 광이 엑시머 레이저 광을 광 시스템에 의해 선형 패턴으로 형성함으로서 얻어지는 것을 특징으로 하는 반도체 장치의 제조 방법.
  10. 제4항에 있어서, 선형 레이저 광이 엑시머 레이저 광을 광 시스템에 의해 선형 패턴으로 형성함으로서 얻어지는 것을 특징으로 하는 반도체 장치의 제조 방법.
  11. 제5항에 있어서, 선형 레이저 광이 엑시머 레이저 광을 광 시스템에 의해 선형 패턴으로 형성함으로서 얻어지는 것을 특징으로 하는 반도체 장치의 제조 방법.
  12. 제6항에 있어서, 선형 레이저 광이 엑시머 레이저 광을 광 시스템에 의해 선형 패턴으로 형성함으로서 얻어지는 것을 특징으로 하는 반도체 장치의 제조 방법.
  13. 제7항에 있어서, 레이저 광의 라인 방향에 수직인 방향에서 선형 패턴을 갖는 레이저 광을 스캐닝함으로써 얻어진 어닐링 효과의 분산이 라인 방향에서 어닐링 효과의 그것보다 2배이상 크다는 것을 특징으로 하는 반도체 장치의 제조 방법.
  14. 제8항에 있어서, 레이저 광의 라인 방향에 수직인 방향에서 선형 패턴을 갖는 레이저 광을 스캐닝함으로써 얻어진 어닐링 효과의 분산이 라인 방향에서 어닐링 효과의 그것보다 2배이상 크다는 것을 특징으로 하는 반도체 장치의 제조 방법.
  15. 제9항에 있어서, 레이저 광의 라인 방향에 수직인 방향에서 선형 패턴을 갖는 레이저 광을 스캐닝함으로써 얻어진 어닐링 효과의 분산이 라인 방향에서 어닐링 효과의 그것보다 2배이상 크다는 것을 특징으로 하는 반도체 장치의 제조 방법.
  16. 제10항에 있어서, 레이저 광의 라인 방향에 수직인 방향에서 선형 패턴을 갖는 레이저 광을 스캐닝함으로써 얻어진 어닐링 효과의 분산이 라인 방향에서 어닐링 효과의 그것보다 2배이상 크다는 것을 특징으로 하는 반도체 장치의 제조 방법.
  17. 제11항에 있어서, 레이저 광의 라인 방향에 수직인 방향에서 선형 패턴을 갖는 레이저 광을 스캐닝함으로써 얻어진 어닐링 효과의 분산이 라인 방향에서 어닐링 효과의 그것보다 2배이상 크다는 것을 특징으로 하는 반도체 장치의 제조 방법.
  18. 제12항에 있어서, 레이저 광의 라인 방향에 수직인 방향에서 선형 패턴을 갖는 레이저 광을 스캐닝함으로써 얻어진 어닐링 효과의 분산이 라인 방향에서 어닐링 효과의 그것보다 2배이상 크다는 것을 특징으로 반도체 장치의 제조 방법.
  19. 반도체 장치에 있어서, 결정 실리콘 막을 갖는 박막 트랜지스터를 구비하며, 여기서 박막 트랜지스터의 소스 및 드레인 영역을 연결하는 방향에서 결정 실리콘 막의 굴절을 분산이 소스 및 드레인 영역을 연결하는 방향에 수직인 방향에서 수정 실리콘 막의 그것보다 2배 이상인 것을 특징으로 반도체 장치.
  20. 반도체 장치에 있어서, 결정 실리콘 막을 구비하며, 여기서 반도체 장치의 캐리어 이동 방향에서 결정 실리콘 막의 굴절율 분산이 캐리어 이동 방향에 수직인 방향에서 수정 실리콘 막의 그것 보다 2배 이상인 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950049535A 1994-12-16 1995-12-14 반도체장치제조방법 KR100326885B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33387694A JP3469337B2 (ja) 1994-12-16 1994-12-16 半導体装置の作製方法
JP94-333876 1994-12-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020000043299A Division KR100393949B1 (ko) 1994-12-16 2000-07-27 반도체 장치 및 액티브 매트릭스 디스플레이 장치

Publications (2)

Publication Number Publication Date
KR960026980A true KR960026980A (ko) 1996-07-22
KR100326885B1 KR100326885B1 (ko) 2002-09-04

Family

ID=18270945

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1019950049535A KR100326885B1 (ko) 1994-12-16 1995-12-14 반도체장치제조방법
KR1020000043299A KR100393949B1 (ko) 1994-12-16 2000-07-27 반도체 장치 및 액티브 매트릭스 디스플레이 장치
KR1020010066219A KR100382429B1 (ko) 1994-12-16 2001-10-26 반도체 장치 및 디스플레이 장치 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020000043299A KR100393949B1 (ko) 1994-12-16 2000-07-27 반도체 장치 및 액티브 매트릭스 디스플레이 장치
KR1020010066219A KR100382429B1 (ko) 1994-12-16 2001-10-26 반도체 장치 및 디스플레이 장치 제조 방법

Country Status (5)

Country Link
US (4) US6242292B1 (ko)
JP (1) JP3469337B2 (ko)
KR (3) KR100326885B1 (ko)
CN (4) CN1113403C (ko)
TW (3) TW369721B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6059873A (en) * 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW305063B (ko) * 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
TW297138B (ko) * 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
US6902616B1 (en) * 1995-07-19 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for producing semiconductor device
US6948633B2 (en) * 1996-08-27 2005-09-27 Fort James Corporation Cup lid having combined straw slot depression and tear back lid retainer
JPH11186189A (ja) * 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
KR19990058636A (ko) * 1997-12-30 1999-07-15 구자홍 레이저 조사 방법
JPH11214700A (ja) 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
JPH11338439A (ja) 1998-03-27 1999-12-10 Semiconductor Energy Lab Co Ltd 半導体表示装置の駆動回路および半導体表示装置
JP3844613B2 (ja) 1998-04-28 2006-11-15 株式会社半導体エネルギー研究所 薄膜トランジスタ回路およびそれを用いた表示装置
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) * 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6535535B1 (en) 1999-02-12 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and semiconductor device
JP3422290B2 (ja) * 1999-07-22 2003-06-30 日本電気株式会社 半導体薄膜の製造方法
TW544727B (en) 1999-08-13 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
CN100382245C (zh) * 1999-08-13 2008-04-16 株式会社半导体能源研究所 半导体器件的制造方法
GB9922576D0 (en) * 1999-09-24 1999-11-24 Koninkl Philips Electronics Nv Laser system
KR100660814B1 (ko) * 1999-12-31 2006-12-26 엘지.필립스 엘시디 주식회사 박막트랜지스터의 반도체층 형성방법
US6872607B2 (en) 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW535194B (en) * 2000-08-25 2003-06-01 Fujitsu Ltd Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
JP5222450B2 (ja) * 2000-09-01 2013-06-26 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6831299B2 (en) 2000-11-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
AU2002239288A1 (en) * 2000-11-17 2002-05-27 Emcore Corporation Laser separated die with tapered sidewalls for improved light extraction
US6855584B2 (en) 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW548717B (en) * 2001-07-27 2003-08-21 Toshiba Kk Method and mask for manufacturing array substrate
TW552645B (en) * 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
US20050167410A1 (en) * 2001-08-21 2005-08-04 Orson Bourne Methods for creating optical structures in dielectrics using controlled energy deposition
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
SG120880A1 (en) * 2001-08-31 2006-04-26 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
JP4397571B2 (ja) 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP4024508B2 (ja) * 2001-10-09 2007-12-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN100508140C (zh) * 2001-11-30 2009-07-01 株式会社半导体能源研究所 用于半导体器件的制造方法
US7351638B1 (en) * 2001-12-18 2008-04-01 Advanced Micro Devices, Inc. Scanning laser thermal annealing
US6875998B2 (en) 2002-03-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing the same, and method of designing the same
US6930328B2 (en) * 2002-04-11 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7005601B2 (en) * 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
KR101010492B1 (ko) 2002-04-18 2011-01-21 어플라이드 머티어리얼스, 인코포레이티드 전자기 방사선의 스캐닝에 의한 열 플럭스 프로세싱
US8288239B2 (en) 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
SG129265A1 (en) * 2002-11-29 2007-02-26 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US7056810B2 (en) * 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
JP2004207616A (ja) * 2002-12-26 2004-07-22 Hitachi Displays Ltd 表示装置
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
US7304005B2 (en) 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
TWI372463B (en) * 2003-12-02 2012-09-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
WO2005071755A1 (fr) * 2003-12-24 2005-08-04 Thomson Licensing Ecran d'affichage d'images et procede de pilotage de cet ecran
EP1553643A3 (en) * 2003-12-26 2009-01-21 Sel Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method for manufacturing crystalline semiconductor film
US7446827B2 (en) * 2004-10-15 2008-11-04 3M Innovative Properties Company Direct-lit liquid crystal displays with laminated diffuser plates
US7710511B2 (en) * 2004-10-15 2010-05-04 3M Innovative Properties Company Liquid crystal displays with laminated diffuser plates
EP1805490A1 (en) * 2004-10-28 2007-07-11 Applied Materials, INC. Methods and devices for measuring a concentrated light beam
US20060291055A1 (en) * 2005-06-15 2006-12-28 3M Innovative Properties Company Diffuse Multilayer Optical Article
JP4850457B2 (ja) * 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
US7524713B2 (en) * 2005-11-09 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7924368B2 (en) * 2005-12-08 2011-04-12 3M Innovative Properties Company Diffuse multilayer optical assembly
US7563661B2 (en) * 2006-02-02 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
US9498845B2 (en) 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP5613814B2 (ja) * 2013-10-29 2014-10-29 株式会社半導体エネルギー研究所 携帯機器
CN104681405B (zh) * 2013-11-27 2019-03-12 中芯国际集成电路制造(上海)有限公司 电性匹配的对称电路的获取方法
JP6012694B2 (ja) * 2014-11-24 2016-10-25 株式会社半導体エネルギー研究所 発光装置の作製方法
KR20200137259A (ko) * 2019-05-29 2020-12-09 삼성전자주식회사 집적회로 소자

Family Cites Families (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046618A (en) 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
US3848104A (en) 1973-04-09 1974-11-12 Avco Everett Res Lab Inc Apparatus for heat treating a surface
US4059461A (en) 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US4328553A (en) 1976-12-07 1982-05-04 Computervision Corporation Method and apparatus for targetless wafer alignment
US4083272A (en) 1976-12-14 1978-04-11 The United States Of America As Represented By The United States Department Of Energy Omega-X micromachining system
US4160263A (en) 1978-05-15 1979-07-03 George R. Cogar Dual or multiple objective video microscope for superimposing spaced images
JPS5567132A (en) 1978-11-15 1980-05-21 Toshiba Corp Method for manufacturing semiconductor device
US4234358A (en) 1979-04-05 1980-11-18 Western Electric Company, Inc. Patterned epitaxial regrowth using overlapping pulsed irradiation
US4249960A (en) 1979-06-18 1981-02-10 Rca Corporation Laser rounding a sharp semiconductor projection
US4341569A (en) 1979-07-24 1982-07-27 Hughes Aircraft Company Semiconductor on insulator laser process
US4309225A (en) 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4266986A (en) 1979-11-29 1981-05-12 Bell Telephone Laboratories, Incorporated Passivation of defects in laser annealed semiconductors
US4370175A (en) 1979-12-03 1983-01-25 Bernard B. Katz Method of annealing implanted semiconductors by lasers
US4803528A (en) 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
DE3166961D1 (en) 1980-08-05 1984-12-06 Belge Etat Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
DE3164887D1 (en) 1980-09-18 1984-08-23 Belge Etat Process for crystallising films, and films thus obtained
JPS5785262A (en) 1980-11-17 1982-05-27 Toshiba Corp Manufacture of metal oxide semiconductor type semiconductor device
JPS57180173A (en) 1981-04-30 1982-11-06 Fujitsu Ltd Mis transistor and manufacture thereof
US4439245A (en) 1982-01-25 1984-03-27 Rca Corporation Electromagnetic radiation annealing of semiconductor material
JPS595624A (ja) * 1982-07-01 1984-01-12 Fujitsu Ltd 半導体装置の製造方法
US4468551A (en) 1982-07-30 1984-08-28 Armco Inc. Laser treatment of electrical steel and optical scanning assembly therefor
US4466179A (en) 1982-10-19 1984-08-21 Harris Corporation Method for providing polysilicon thin films of improved uniformity
US4545823A (en) 1983-11-14 1985-10-08 Hewlett-Packard Company Grain boundary confinement in silicon-on-insulator films
US4937618A (en) 1984-10-18 1990-06-26 Canon Kabushiki Kaisha Alignment and exposure apparatus and method for manufacture of integrated circuits
JPH0715881B2 (ja) 1984-12-20 1995-02-22 ソニー株式会社 半導体薄膜の熱処理方法
JPS61198685A (ja) 1985-02-27 1986-09-03 Kanegafuchi Chem Ind Co Ltd 半導体装置の製法
JPS6240986A (ja) 1985-08-20 1987-02-21 Fuji Electric Corp Res & Dev Ltd レ−ザ−加工方法
JPH0639703B2 (ja) 1986-04-15 1994-05-25 キヤノン株式会社 堆積膜形成法
DE3782929T2 (de) 1986-07-09 1993-06-17 Matsushita Electric Ind Co Ltd Bearbeitungsverfahren mittels laserstrahles.
US6149988A (en) 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US5708252A (en) 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
JPS63102265A (ja) * 1986-10-20 1988-05-07 Agency Of Ind Science & Technol 半導体装置の製造方法
US4835704A (en) 1986-12-29 1989-05-30 General Electric Company Adaptive lithography system to provide high density interconnect
US4764485A (en) 1987-01-05 1988-08-16 General Electric Company Method for producing via holes in polymer dielectrics
DE3853970D1 (de) 1987-07-22 1995-07-20 Philips Patentverwaltung Optisches Interferenzfilter.
JPH01245993A (ja) 1988-03-27 1989-10-02 Semiconductor Energy Lab Co Ltd 薄膜加工装置
JPH0242761A (ja) 1988-04-20 1990-02-13 Matsushita Electric Ind Co Ltd アクティブマトリクス基板の製造方法
JPH0325920A (ja) 1989-06-23 1991-02-04 Sharp Corp 単結晶薄膜形成方法
US5232674A (en) 1989-12-20 1993-08-03 Fujitsu Limited Method of improving surface morphology of laser irradiated surface
US5247375A (en) * 1990-03-09 1993-09-21 Hitachi, Ltd. Display device, manufacturing method thereof and display panel
US5221365A (en) 1990-10-22 1993-06-22 Sanyo Electric Co., Ltd. Photovoltaic cell and method of manufacturing polycrystalline semiconductive film
JPH0824104B2 (ja) 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
US5365875A (en) 1991-03-25 1994-11-22 Fuji Xerox Co., Ltd. Semiconductor element manufacturing method
JP2983684B2 (ja) 1991-05-23 1999-11-29 三洋電機株式会社 光起電力装置の製造方法
JPH05182923A (ja) 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
JP3466633B2 (ja) 1991-06-12 2003-11-17 ソニー株式会社 多結晶半導体層のアニール方法
JP2781706B2 (ja) * 1991-09-25 1998-07-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR100269350B1 (ko) * 1991-11-26 2000-10-16 구본준 박막트랜지스터의제조방법
JPH05175235A (ja) * 1991-12-25 1993-07-13 Sharp Corp 多結晶半導体薄膜の製造方法
US5424230A (en) * 1992-02-19 1995-06-13 Casio Computer Co., Ltd. Method of manufacturing a polysilicon thin film transistor
US5424244A (en) 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US5372836A (en) 1992-03-27 1994-12-13 Tokyo Electron Limited Method of forming polycrystalling silicon film in process of manufacturing LCD
KR970003917B1 (en) * 1992-04-07 1997-03-22 Semiconductor Energy Lab Kk Method of making insulating gate semiconductor device
JP3150792B2 (ja) * 1992-05-09 2001-03-26 株式会社半導体エネルギー研究所 電子回路の作製方法
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JP2697507B2 (ja) * 1992-08-28 1998-01-14 セイコーエプソン株式会社 液晶表示装置
CN1027204C (zh) * 1992-09-19 1994-12-28 南京大学 可见光致发光的硅量子点制备方法
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
EP0598394A3 (en) * 1992-11-16 1997-07-16 Tokyo Electron Ltd Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals.
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
JP3165304B2 (ja) 1992-12-04 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体処理装置
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
JPH06232069A (ja) 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH06260384A (ja) 1993-03-08 1994-09-16 Nikon Corp 露光量制御方法
KR100203982B1 (ko) * 1993-03-12 1999-06-15 야마자끼 순페이 반도체장치 및 그의 제작방법
JP3296448B2 (ja) * 1993-03-15 2002-07-02 株式会社ニコン 露光制御方法、走査露光方法、露光制御装置、及びデバイス製造方法
JPH06289431A (ja) 1993-03-31 1994-10-18 A G Technol Kk 薄膜トランジスタの形成方法とアクティブマトリクス表示素子
JPH06308534A (ja) 1993-04-27 1994-11-04 Hitachi Ltd アクティブマトリックス基板およびその製造方法
KR100255689B1 (ko) 1993-05-27 2000-05-01 윤종용 반도체 레이져 소자 및 그 제조방법
US5366926A (en) 1993-06-07 1994-11-22 Xerox Corporation Low temperature process for laser dehydrogenation and crystallization of amorphous silicon
US5488000A (en) * 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US5589406A (en) * 1993-07-30 1996-12-31 Ag Technology Co., Ltd. Method of making TFT display
US5477073A (en) * 1993-08-20 1995-12-19 Casio Computer Co., Ltd. Thin film semiconductor device including a driver and a matrix circuit
US5777724A (en) * 1994-08-24 1998-07-07 Suzuki; Kazuaki Exposure amount control device
US5529951A (en) 1993-11-02 1996-06-25 Sony Corporation Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
CN100367461C (zh) 1993-11-05 2008-02-06 株式会社半导体能源研究所 一种制造薄膜晶体管和电子器件的方法
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
TW272319B (ko) 1993-12-20 1996-03-11 Sharp Kk
KR100321541B1 (ko) 1994-03-09 2002-06-20 야마자끼 순페이 능동 매트릭스 디스플레이 장치의 작동 방법
JPH07249591A (ja) * 1994-03-14 1995-09-26 Matsushita Electric Ind Co Ltd 半導体薄膜のレーザーアニール方法及び薄膜半導体素子
US6059873A (en) * 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
JP3330736B2 (ja) 1994-07-14 2002-09-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5712191A (en) 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3388042B2 (ja) 1994-11-18 2003-03-17 三菱電機株式会社 レーザアニーリング方法
US5756364A (en) 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09321310A (ja) * 1996-05-31 1997-12-12 Sanyo Electric Co Ltd 半導体装置の製造方法
US6393042B1 (en) * 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
GB9922576D0 (en) * 1999-09-24 1999-11-24 Koninkl Philips Electronics Nv Laser system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
US7863541B2 (en) 2001-08-10 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Laser annealing apparatus and semiconductor device manufacturing method

Also Published As

Publication number Publication date
CN1267917A (zh) 2000-09-27
CN1267906A (zh) 2000-09-27
CN1179403C (zh) 2004-12-08
KR100326885B1 (ko) 2002-09-04
CN1218404C (zh) 2005-09-07
CN1614756B (zh) 2013-06-19
US6613619B2 (en) 2003-09-02
KR100393949B1 (ko) 2003-08-09
CN1113403C (zh) 2003-07-02
JPH08172049A (ja) 1996-07-02
US20020025615A1 (en) 2002-02-28
JP3469337B2 (ja) 2003-11-25
US6274885B1 (en) 2001-08-14
KR100382429B1 (ko) 2003-05-09
CN1131341A (zh) 1996-09-18
US6054739A (en) 2000-04-25
TW445644B (en) 2001-07-11
US6242292B1 (en) 2001-06-05
TW441113B (en) 2001-06-16
TW369721B (en) 1999-09-11
CN1614756A (zh) 2005-05-11

Similar Documents

Publication Publication Date Title
KR960026980A (ko) 반도체 장치 및 그 제조 방법
KR100250851B1 (ko) 폴리실리콘 박막 트랜지스터의 제조 방법 및 장치
KR940027182A (ko) 반도체장치 및 그 제조방법
US5477073A (en) Thin film semiconductor device including a driver and a matrix circuit
US5591668A (en) Laser annealing method for a semiconductor thin film
US7145623B2 (en) Flat panel display having concentrated switching element arrangement and method of manufacturing the same
KR940006285A (ko) 박막형 반도체 장치 및 그 제작방법
US7474679B2 (en) Laser apparatus and manufacturing method of thin film transistor using the same
US7033434B2 (en) Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same
TW200501235A (en) Method of manufacturing an active matrix substrate and an image display device using the same
KR970051842A (ko) 박막 트랜지스터의 자기 정렬 노광 방법
JP6483271B2 (ja) 薄膜トランジスタ及び薄膜トランジスタの製造方法
US10998189B2 (en) Laser annealing process of drive backplane and mask
US10026623B2 (en) Thin film transistor substrate, display panel, and laser annealing method
KR940027187A (ko) 반도체 장치 및 그 제조방법
US20090233456A1 (en) Irradiation optical system, irradiation apparatus and fabrication method for semiconductor device
JP2508503B2 (ja) 光電変換装置
KR970022464A (ko) Cmos박막반도체장치 및 그 제조방법
KR20200087907A (ko) 레이저 결정화 장치
US20200020530A1 (en) Laser irradiation device, method of manufacturing thin film transistor, program, and projection mask
KR20050078191A (ko) 반도체 박막의 제조 방법 및 화상 표시 장치
KR100491990B1 (ko) 어레이기판을 제조하는 방법 및 포토마스크
KR20030082729A (ko) 노광 시스템
US9484361B2 (en) Array substrate, manufacturing method thereof, display panel and display device
KR20070089072A (ko) 광조사장치, 광조사방법, 결정화장치, 결정화방법, 반도체디바이스, 및 광변조소자

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
A107 Divisional application of patent
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130117

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20140120

Year of fee payment: 13

FPAY Annual fee payment

Payment date: 20150120

Year of fee payment: 14

EXPY Expiration of term