TW535194B - Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus - Google Patents

Abstract

An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.

Description

535194 A7 B7 V. Description of the invention) Cross-references to related applications This application is based on and claims the patent application No. 2000-255646 filed on August 25, 2000 and July 3, 2001 With priority of 2001-202730, the contents of the two applications are incorporated herein by reference. BACKGROUND OF THE INVENTION [Field of the Invention] The present invention relates to a semiconductor element, a method of manufacturing the same, and a semiconductor manufacturing apparatus. In particular, the present invention relates to a semiconductor device including a thin film transistor and a peripheral circuit including the thin film transistor. The pixel region is formed on an amorphous (amorphous) substrate such as a non-alkali glass substrate. [Related technology description] TFT (Thin Film Transistor) is formed on a very thin and minute semiconductor film. In consideration of the recent increase in demand for the area, TFTs have been examined for mounting on a large-screen LCD panel or the like. In particular, it is expected to be applied to a system panel and the like. On the system panel, a polycrystalline semiconductor TFT (especially a polycrystalline silicon TFT (p-Si TFT)) is formed on an amorphous substrate such as a non-alkali glass substrate. In this case, as a broad method, an amorphous silicon (a-Si) thin film system is formed as a semiconductor thin paper. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the back Note: Please fill in this page again) Order —: s. 535194 A7 B7 V. Description of the invention 3 () film, and then irradiated with ultraviolet short-pulse laser laser, so as not to affect the glass substrate, only melt and crystallize the a -Si film, thereby obtaining a P_Si film as a functioning semiconductor film. Laser lasers have been developed that emit high output linear beams that replicate large area system panels. The P_Si thin film obtained by laser laser crystallization is not only easily affected by the irradiation energy density, but also affected by the beam shape, the surface state of the thin film, or the like. It is difficult to form a large number of uniform p-Si films within a crystalline particle size in a large area. The laser crystallized samples were observed with AFM, and it was found that the crystalline particles growing from the randomly generated cores were approximately regular polygons, and protrusions were observed at the crystalline particle boundary systems where the crystalline particles collided with each other. The particle size is less than 1 // m, as shown in Figure 37. In this method, when a TFT is manufactured from a P-Si thin film obtained by crystallization using a laser, a channel region contains many crystal particles. Suppose that the size of the crystalline particles is large, the number of particle boundaries existing in the channel is small, and the mobility is high. Suppose that the size of the crystalline particles in the channel region is small, while the number of particle boundaries existing in the channel is large, and the mobility is low. Therefore, the transistor characteristics of a TFT are very dependent on the particle size. Furthermore, crystalline particle boundaries have many disadvantages, and the particle boundaries existing in the channels suppress the transistor characteristics. The mobility of the TFT obtained by this technology is about 150 cm2 / Vs. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the notes on the back before filling this page) • Order, .MW, 535194 A7 B7 V. Description of the invention) Summary of the invention An object is to provide a semiconductor element including a TFT, in which the transistor characteristics of the TFT are made highly uniform, and the mobility in the peripheral circuit region is particularly high, so as to achieve the application to peripheral integrated circuit TFT-LCD, High-speed drive for system panels, system glass, and the like. Another object of the present invention is to provide a semiconductor device in which the shortage of the energy beam output that continuously outputs energy with respect to time is compensated to increase the production of crystals of a semiconductor thin film, thereby realizing a high-efficiency TFT (which is The mobility in the peripheral circuit area is particularly high to achieve high-speed driving. Another object of the present invention is to provide a method for manufacturing such semiconductor elements. Another object of the present invention is to provide a device for manufacturing such semiconductor elements. According to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor device, in which a pixel region having a thin film transistor and a peripheral circuit region are formed on an amorphous substrate, and include forming the peripheral circuit with an energy beam. The semiconductor thin film in the region is crystallized, and the energy beam continuously outputs energy along at least a time axis to the peripheral circuit region, thereby forming a semiconductor thin film formed in a semiconductor film that functions as a respective thin film transistor. In this case, the energy beam is preferably a CW laser beam, more specifically, a solid-state laser beam (DPSS (diode paper size applies to Chinese National Standard (CNS) A4 specifications (210X297 mm)). (Please read the precautions on the back and fill in this page), OK_ 5194 A7 B7 V. Description of the invention 4) Pump 唧 solid-state laser) Laser beam). By crystallizing a semiconductor film with an energy beam that continuously outputs energy along the time axis, the crystal particle size is increased. For example, in the energy scanning direction, the crystalline state of the semiconductor film is formed into a streamline flow pattern with long crystal particles. . The crystal particle size in this case is 10 to 100 times the size obtained by using crystals currently available for laser lasers. In the first aspect of the present invention, each semiconductor thin film is preferably formed in a linear or island pattern on the amorphous substrate. Crystallization technology using CW lasers has been studied in the SOI field, but glass substrates are considered to be heat resistant. When a glass substrate is irradiated with a laser while an a-Si thin film is formed on the entire surface as a semiconductor thin film, the temperature of the glass substrate rises as the temperature of the a-Si thin film rises, and it is observed that such as cracked damage. In the present invention, the semiconductor thin film is processed into a linear shape or an island shape in advance to prevent the temperature of the glass substrate from rising and the impurities from diffusing into the thin film. Even in the case where the semiconductor film of the TFT function is formed on an amorphous substrate such as a glass substrate, an energy beam that continuously outputs energy along the time axis using a CW laser or the like can be used without generating any problem. In the first aspect of the present invention, the energy beam irradiation position mark corresponding to each of the patterned semiconductor films is formed on the amorphous substrate. This mark can prevent the irradiation position of the energy beam from shifting. Stable This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)-, tr—: φ. V. Description of the invention $) Continuous beam supply system A semiconductor film that can produce so-called side growth and has large-sized crystal particles can be reliably formed. In the first aspect of the present invention, it is preferable that the gap is formed in each semiconductor film formed with a pattern on an amorphous substrate, or a thin-line insulating film is formed on each semiconductor film, and the semiconductor film It is irradiated with an energy beam in the longitudinal direction near the gap. In this case, the gap or insulating film (for convenience, hereinafter referred to as the gap) is to block the crystal grains and grain boundaries that grow from the edge to the inside in the crystal by the irradiation of the energy beam. The crystalline particles grown only by the gap are formed between the gaps. The area between the right slits is satisfactorily narrow, and a single crystal system is formed in this area. In this method, by forming a gap, the channel region can be selectively changed to a single crystal state to set a region where large-sized particles are formed. For example, the region between the gaps is used as a channel region of a semiconductor member such as a thin film transistor. . In the first aspect of the present invention, the irradiation condition of the energy beam that preferably continuously outputs energy along the time axis can be changed between the pixel region and the peripheral circuit region, so that the semiconductor thin film formed in the pixel region can output the energy of the energy pulse. It is crystallized by a light beam, and a semiconductor thin film formed in a peripheral circuit region is crystallized by continuously outputting a light amount of 月 沿 along the time axis (more specifically, a semiconductor thin film formed in a pixel region is crystallized, and then The semiconductor thin film formed in the peripheral circuit area is crystallized), or it is formed on the paper of this week, which is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 r ----— ~ — BZ___ V. Invention Explanation θ [) " —- 'The semiconductor thin film in the region is crystallized by continuously outputting the light beam here along the time axis. The crystallized semiconductor thin film is set as a -semiconductor thin film and formed in a pixel. The semiconductor thin film in the area is set as an unchanged semiconductor thin film. Although the position control capability is important for either the pixel or the peripheral area, any thin film transistor system formed in the peripheral circuit area requires higher efficiency than the pixel area and must be optimized in manufacturing. For this purpose, an energy beam that continuously outputs energy and can reliably form a semiconductor thin film having large-sized crystalline particles while making the operating characteristics of the thin film transistor highly uniform is particularly applied to the peripheral circuit area. In a pixel area with a low required efficiency, the irradiation time of the energy beam is short, or a pulse-like energy beam is applied. In this method, the crystallization process is changed between the peripheral circuit area and the pixel area. As a result, a desired system panel can be completed which is very effective in satisfying the performance required in each position. I According to the first aspect of the present invention-a "semiconductor element" is provided, in which a pixel region having a thin film transistor and a peripheral circuit region are formed on an amorphous substrate, wherein the respective thin film transistors constitute at least a peripheral circuit region The semiconductor thin film is formed in a crystalline state with a streamlined flow pattern of large-sized crystal particles. In this case, the active semiconductor film can be changed to a large junction------ -----------------------_ This paper size applies to Chinese national standards (CNS) A4 specification (210X297 public director) 〇

Yes, (please read the notes on the back before filling this page) 535194 A7 _B7_ V. Description of the invention t) Large-crystal-grain state, and preferably a single crystal state along the streamline of the flow pattern. For example, the channel region of a thin film transistor can be changed to a single crystal state. High-speed driving thin-film transistor with excellent transistor characteristics. In addition, the semiconductor thin film is preferably formed over the amorphous substrate with a buffer layer interposed therebetween. The buffer layer includes a thin film including Si and N, or Si, O, and N. The density of hydrogen in the semiconductor film is preferably 1 × 10 (2) / cm3 or lower, and more preferably, the density of hydrogen in the buffer layer is 1 × 1022 / cm3 or lower. With this structure, the transistor characteristics of the TFT can be highly uniformized by crystallization using an energy beam that continuously outputs energy to time. Furthermore, the TFT can be formed stably without causing pinholes or peeling. This makes it possible to realize a very highly reliable TFT. According to a third aspect of the present invention, there is provided a semiconductor manufacturing apparatus for emitting an energy beam for crystallizing a semiconductor thin film formed on an amorphous substrate, wherein the semiconductor manufacturing apparatus can continuously output energy along a time axis The beam has the function of scanning the energy beam to the object to be irradiated, and the output instability of the energy beam has a value less than ± 1%. In this case, the output instability of the energy beam is set to a value of less than ± 1%, and the noise versus time that better expresses the instability of the energy beam is set to 0.1 rms% or less. Therefore, a stable and continuous beam can be applied. Continuous light beams can be scanned to form many thin papers evenly in a large-sized crystalline state (flowing pattern). Standards for Chinese paper (CNS) A4 (210X297 mm) are applicable. -10- 535194 A7 B7 V. Description of the invention 8) The effect of the film transistor is a semiconductor thin film. According to a fourth aspect of the present invention, similar to the third aspect, a semiconductor manufacturing apparatus is provided. The device includes a setting device for setting an amorphous substrate on a surface on which a semiconductor film is formed, so that the amorphous substrate can freely move on a plane parallel to the surface of the semiconductor film, a laser swing device, It can output energy beam continuously with respect to time, and a beam splitting device for optically splitting the energy beam emitted from the laser oscillating device into sub-beams. Each beam is applied to scan a corresponding portion of the semiconductor film relatively to perform crystallization. In this case, by splitting the sub-beams, predetermined portions of the semiconductor thin film corresponding to the respective sub-beams can be immediately crystallized. As a result, many thin-film transistor semiconductor films can be formed uniformly in a large-sized crystalline state (flow pattern). In addition, even when using a laser pendulum device with an output lower than that of a laser laser such as a CW laser, a very high throughput is obtained which is not worse than that when using a laser laser. This makes it possible to effectively obtain a crystal for a thin film transistor. In the fourth aspect of the present invention, each of the secondary beams is preferably controlled so that only a portion where the thin film transistor is formed is irradiated with the beam at an optimal energy intensity for crystallization, and the beam is rapidly passed through the non-formed thin film transistor. The part of the crystal. Thereby, a higher production volume can be obtained, and at the same time, a very efficient crystallization for thin film transistors can be achieved. 0 -11- (Please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS ) A4 specification (210X297 mm) 535194 A7 ------------ B7 _ V. Invention description 9 () "-According to the fifth aspect of the present invention, similar to the third aspect, it provides a Semiconductor manufacturing equipment. The device includes a setting device for setting an amorphous substrate on a surface on which a semiconductor film is formed so that the side amorphous substrate can move freely on a plane parallel to the surface of the semiconductor film. The laser swing device It can output energy beam continuously with respect to time, and intermittent (pulse) emission device, which has a transmission area and a blocking area for the energy beam to intermittently transmit the energy beam. By scanning the moving energy beam to relatively scan the amorphous substrate, the energy beam is intermittently applied to the semiconductor film to selectively crystallize only the portion of the thin film transistor. In this case, the transmission of the energy beam is controlled mainly by the intermittent emission device, and only the semiconductor thin film portion described can be selectively crystallized. That is, only a desired portion of the semiconductor thin film in a non-patterned state can be selectively crystallized. Therefore, it is not necessary to set in advance the portion irradiated with the light beam, that is, the portion (band-like or island-like) forming the thin film transistor. Therefore, the number of manufacturing steps can be shortened, and productivity can be improved. In the fifth aspect of the present invention, it is preferable that the energy beam is intermittently applied to portions other than the thin film transistor to form a position mark for forming each thin film transistor into a predetermined shape. By forming the position mark and crystallizing the thin film transistor at the same time, the number of manufacturing steps can be shortened and the formation of an effective and accurate thin film transistor becomes possible. This paper size applies Chinese National Standard (CNS) A4 specification (21〇χ297mm) -12- (Please read the notes on the back before filling this page) • Order — 535194 A7 _____B7 I. Description of the invention (0 ~~) ~ ~ ^ The present invention includes semiconductor devices corresponding to the above-mentioned fourth and fifth aspects and a method for manufacturing the semiconductor devices. 1A and 1B are schematic plan views showing a crystalline state of a semiconductor thin film in the first embodiment of the present invention; and FIGS. 2A and 2B are plan views showing a state in which a semiconductor thin film is formed into a stripe pattern and Light micrographs; Figures 3A and 3B are light micrographs showing the state of forming TFT islands; Figure 4 is a SEM image showing the state of a semi-conductor film crystallized by a CW laser (flow pattern); Figure 5 Fig. 6 is a SEM image showing the state of a semiconductor film crystallized into a laser pattern by a CW laser; Fig. 6 is a SIMS analysis image showing a surrounding semiconductor film; Fig. 7 is an optical image showing a cross-section TEM of a semiconductor film; 8A to 8C are schematic cross-sectional views respectively showing steps in manufacturing the TFT according to the first embodiment; and FIGS. 9A to 9C are respectively showing steps subsequent to FIG. 8C in manufacturing the TFT according to the first embodiment. Schematic cross-sectional views; Figures 10A and 10B are schematic cross-sectional views respectively showing the steps following Figure 9C in manufacturing the TFT according to the first embodiment; this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) Li) -13- (Please read the notes on the back before filling this page). Order # 535194 A7 B7 V. Invention Description 1 (1 (Please read the notes on the back before filling this page) Figures 11A to lie FIG. 12 is a schematic cross-sectional view showing the steps subsequent to FIG. 10B in manufacturing the TFT according to the first embodiment; FIG. 12 is a diagram showing a relationship between a crystal pattern and a mobility of a semiconductor thin film; FIG. 13 is a diagram showing a crystal pattern A light micrograph of the relationship with the mobility of the semiconductor thin film; FIG. 14 is a schematic plan view showing a band-shaped semiconductor thin film and a position mark in the first modification of the first embodiment; and FIGS. 15A to 15D are shown in FIG. 16A to 16D are schematic plan views showing the state of a semiconductor thin film in the third modification of the first embodiment in the second modification of the first embodiment; 17 FIG. 18 is a schematic plan view showing a state of a semiconductor thin film in a fourth modification of the first embodiment; FIGS. 18A to 18C are schematic views showing a state of a semiconductor thin film in a fifth modification of the first embodiment; FIG. 9 is a schematic diagram showing a laser device in a second embodiment of the present invention; FIG. 20 is a diagram showing a DPSS laser device in a first modification of the second embodiment of the present invention; FIG. 21 is a diagram A schematic diagram showing a DPSS laser device in a second modification of the second embodiment of the present invention; FIG. 22 is a diagram showing a third embodiment of the present invention.

-14- 535194 A7 B7 V. Description of the invention 卩) Partial schematic diagram of DPSS laser device; Figure 23 is a schematic diagram showing the state of a total of 28 beams generated by using four DPSS lasers; Figures 24A and 24B show A schematic diagram of another irradiation method using a DPSS laser; FIG. 25 is a schematic diagram showing the state of crystallizing only selectively in a region where a TFT is formed on a semiconductor thin film; and FIGS. 26A to 26B are diagrams used in a third embodiment In the improvement, a schematic diagram of a DPSS laser irradiation system; FIG. 27 is a schematic diagram showing a main part of a DPSS laser device according to a fourth embodiment of the present invention; FIG. 28 is a TFT shown in a pixel area A schematic diagram of a setting example; FIG. 29 is a schematic diagram showing a main part of a DPSS laser device according to a modification 2 of the fourth embodiment; FIG. 30 is a diagram showing a DPSS laser device according to a modification 3 of the fourth embodiment; Fig. 31 is a schematic diagram showing a main part of a DPSS laser device according to a modification 4 of the fourth embodiment; Fig. 32 is a diagram showing a SiN or SiON and a Si layer by inspection Made buffer The results obtained by the hydrogen distribution in the graph; Figure 33 is a light micrograph showing the peeling state of an a-Si film; This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) -15- (please first Read the notes on the back and fill out this page) Order · 0 535 194 A7 B7 V. Description of the invention 1) Figure 34 is a schematic cross-sectional view showing an a-Si thin film formed with a buffer layer interposed therebetween. The state above the glass substrate; Figure 35 shows the SIMS analysis results of the glass substrate / SiN / Si02 / a-Si structure after heat treatment at 500.0 for 2 hours; Figure 36 shows the semiconductor film on Light micrograph after crystallization; and FIG. 37 is an AFM diagram showing the state of the Shixi film crystallized using a conventional laser laser. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment to which the present invention is applied will be described in detail below with reference to the drawings. (First embodiment)-Crystallization with continuous energy beam output along the time axis-The main part of the first embodiment of the present invention will be disclosed, that is, using an energy beam that continuously outputs energy along the time axis, for example, a semiconductor laser ( LD laser) solid-state laser (DPSS (diode pumped solid-state laser) laser) to crystallize semiconductor thin films. A continuous energy beam along the time axis can irradiate and scan the eyes, such as an amorphous silicon (a-Si film), to form large-sized polycrystalline silicon crystals. The crystal grain size at this time is about a few, and very large crystals can be formed. This crystalline particle size is currently -16- (please read the precautions on the back before filling out this page). This paper size is 100 times the Chinese National Standard (CNS) A4 size (210X297 mm). Because of the obtained size of the laser circuit obtained by the side circuit part, this crystal is very advantageous for TFT systems where high-speed operation is required. As shown in Figures 1A to 2B, on the beautiful glass material i that is ancient, „102 layer forming _2 film 2 is formed into a line (belt) shape (pictured) or an island shape ( (Figure ⑺). The surface of the a_si film 2 and the lower surface of the glass substrate i are irradiated and scanned by the energy beam 3 continuously output along the time axis from Lei Shi, in the direction shown by the arrow. After that, as shown in the third entry 3β; each strip-shaped semiconductor film 2 (picture M) or each island-shaped, 'conductor film 2 (3B S1) is patterned and etched to pass through the The channel region 4 in the semiconductor thin film 2 forms a TFT island region 6 having a source region and a non-electrode region 5.… Due to the high cooling rate due to thermal diffusion to the peripheral region, microcrystals are formed around the conductive region 6. However, The cooling rate in the island area 6 can be set sufficiently low by appropriately selecting the irradiation conditions (energy and scanning speed) of the cw laser 3, and forming a number of width // m and a length of tens of # m Crystal grains. Therefore 'the grain size of the channel portion can be increased. Use of energy light continuously along the time axis The crystallization technology has been studied in the field of SOI (silicon on insulator), but glass substrates are considered to be heat-resistant. When a glass substrate is irradiated with a laser, and an a-Si thin film system is formed on the entire surface The temperature of the glass substrate rises as the temperature of the a-Si film rises. Therefore, observe 535194, Invention Description 1 (5 < solve this problem, "film = processed into a belt or island shape 'to prevent breaking The temperature of the glass substrate rises, cracks occur, and impurities diffuse into the film. In order to form many TFTs in a large area, it is necessary to stabilize the energy + the conductor. The solid-state laser system of the laser has an energy stability of ~ 1 / Q / h 'So it is better than other energy beams. The following will describe-an example of crystallization using a diode pump · state laser (DPSS laser) with a semiconductor laser holmium laser. The wavelength of this solid-state laser is 532 nm (Nd: The second harmonic of YV〇4, the second harmonic of Nd: YAG, or the like). The energy beam output stability is < 0.1 rms% noise, and the output time stability is < ± 1% / h. Note that the wavelength is not limited to this, but Use any wavelength that can crystallize a semiconductor film. The output is 10 W, and NA35 glass is used as an amorphous substrate. The material of the amorphous substrate is not limited to this, but it can be another one with an amorphous insulating layer , Ceramic, plastic, or the like, non-alkaline glass, silica glass, single crystal silicon. A Si02 barrier layer is formed on a glass substrate and a semiconductor film with a film thickness of about 400 nm. Note that the barrier layer is not limited to this, but can be a layer structure of a Si02 film and a SiN film. The semiconductor film is a silicon film formed by plasma CVD. The heat treatment for dehydrogenation was performed at 450 ° for 2 hours before energy irradiation. The dehydrogenation system is not limited to heat treatment, but this paper size can apply Chinese National Standard (CNS) A4 specification (210X297 mm) -18- (Please read the precautions on the back before filling this page) 1 (6) Hunting is achieved by irradiating the energy beam multiple times and gradually increasing the energy level from the low energy side. In this embodiment, the semiconductor thin film is made of glass and is irradiated from the bottom surface ', but it is not limited thereto. The semiconductor thin film can be irradiated from the semiconductor thin film side. The energy beam is a 400-inch extended linear beam (rectangular beam). The size and shape of the energy beam are not limited to this, and the energy beam can be adjusted to an optimal size required for crystallization. As the shape of the light beam, a rectangular (or elliptical) light beam, a linear (or elliptical) light beam, or the like can be suitably used. Although it is preferred that such a long (or oval) beam, a rectangular (or oval) beam, or a linear (or oval) beam have a uniform energy intensity distribution within the beam, this need not always be the case. This-the beam can have an energy profile with a maximum intensity tied to the center of the beam. In this embodiment, as shown in FIGS. 2A and 2B, the a_Si thin film 2 is formed with a stripe pattern in a silicon region where a TFT is formed. Adjacent band-shaped a-Si films 2 are separated by a predetermined distance and exist; there are regions of the a-Si film 2 again. The arrangement of the a_y film 2 can significantly reduce thermal damage to the NA3 5 glass substrate 1. Note that the a-Si 溥 film is not limited to a band shape, but can form an island pattern. Figure 4 shows the results of crystallizing an a-Si film at a scanning speed of an energy beam of 20 cm / s. It was found that crystals having a crystal particle size of 5 or more were formed. This crystalline particle size is equivalent to 10 to 100 times the size of this paper. The Chinese National Standard (CNS) A4 specification (210X297 mm) is applicable. 535194 A7 B7 V. Description of the invention 1 (7) Laser crystallized particles size. If it is observed that the crystalline particles flow in the scanning direction, the crystalline pattern is defined as a "flow pattern" in this embodiment. This name is not limited to this, but is convenient for description in this embodiment. As a pattern having a crystalline particle size different from the flowing pattern, a pattern shown in FIG. 5 is sometimes formed, which is similar to the crystalline pattern formed by laser laser shown in FIG. 37. In this embodiment, the crystalline particle pattern is defined as "laser pattern". The laser pattern is formed due to improper energy density or scanning speed (or both). The following will describe the observation of a large amount of glass present on the crystalline film The result of the influence of impurities in this embodiment. In this embodiment, a Si02 film with a thickness of about 400 nm formed by PECVD is interposed between the NA35 glass substrate 1 and the a-Si film 2 as a semiconductor film. The buffer The layer system is not limited to this, but it can be a single SiO 2 film with a thickness of 200 nm or more, or a laminated structure of SiO 2 film and SiN film can be used. Figure 6 shows the results of SIMS analysis. It is confirmed that in glass The impurities (aluminum, boron, sodium, and barium) are not present in the crystalline semiconductor film. Aluminum is observed in the data, but it is only a phantom. Aluminum does not actually exist in the film. The density of sodium is low The detection limit is shown in Figure 7. Figure 7 shows the results of detecting the thermal damage to NA35 glass (observation of the cross-section TEM result). As shown in Figure 7, the interface between the glass and the buffer layer is clear. CNS ) A4 size (210X297mm) -20- (Please read the precautions on the back before filling this page)

， 可 I 535194 A7 B7 V. Description of the invention ί8), and no damage to the glass was observed. In this embodiment, crystallization is achieved by using a DPSS laser with a 10 W output and a wavelength of 532 nm. When the configuration of the semiconductor thin film pattern is known, as shown in Figs. 2A and 2B, multiple beams can be formed and emitted simultaneously when they are matched with the semiconductor thin film area. In this case, a multi-energy beam generator may be used, or the energy beam system from a single generator may be split into multiple beams. -Manufacturing of TFT-An example of manufacturing a? -Channel thin film transistor using the above-mentioned energy beam output continuously along the time axis will be explained below. 8A to 11C are schematic cross-sectional views showing the steps in manufacturing a thin film transistor, respectively. As an amorphous substrate, similar to the above example, a SiO2 glass substrate 2 is used, as shown in FIG. 8A, a Si02 buffer layer 22 having a thickness of about 400 nm, and a Si film system having a pattern of an amorphous silicon film It is formed on the glass substrate 21. The heat treatment for dehydrogenation was performed at 450 ° for 2 hours. Dehydrogenation is not limited to heat treatment, but can be achieved by irradiating the energy beam multiple times while gradually increasing the energy level from the low energy side. Next, the a-Si thin film 2 is crystallized by using the energy beam continuously outputted along the time axis, thereby forming an active semiconductor thin film 11. More specifically, as shown in FIG. 2A, a semiconductor thin film is formed. In this case, the a-Si thin film 2 is formed in a band shape. Use 532 nm wavelength, energy beam stability < 0.1 rms% noise, apply Chinese National Standard (CNS) A4 specification (210X297 mm) at this paper scale -21- (Please read the precautions on the back before filling in this Page) Order 丨 Φ 194 194 A7 B7 V. Description of the invention) and DPSS laser with output stability < ± 1% / h. The a-Si film 2 was irradiated and scanned with a linear light beam having an energy beam size of 400 / zmx 40 // m at a sweep speed of 20 cm / s to crystallize it. Subsequently, as shown in FIG. 3A, a TFT island region 6 is formed in the crystalline band-shaped semiconductor thin film. At this time, the semiconductor thin film system is processed so that the TFT channel region 4 is disposed on the central axis of the strip-shaped semiconductor thin film. That is, the current flow in the complete TFT is consistent with the laser beam scanning direction. In this case, as shown in the lower part of FIG. 2A, a plurality of (three in this example) TFTs may be formed in each bandwidth. As shown in FIG. 8B, the silicon oxide film 23 as a gate oxide film is formed on the active semiconductor film 11 by a PECVD film having a thickness of about 200 nm. The silicon oxide film 23 can be formed by other methods such as LPCVD or sputtering. As shown in FIG. 8C, an aluminum thin film (or aluminum alloy thin film) 24 has a thickness of about 300 nm. As shown in FIG. 9A, the aluminum thin film 24 is formed into an electrode-shaped pattern by photolithography and dry etching to form a gate electrode 24. As shown in FIG. 9B, the patterned gate electrode 24 is used The silicon oxide thin film 23 is patterned as a mask, thereby forming a gate oxide thin film 23 conforming to the shape of the gate electrode. As shown in Figure 9C, the gate electrode 24 is used as the cover mold. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -22- (Please read the precautions on the back before filling this page), \ 一 \ 口 · Invention Description 3j〇) Ions are implanted into both sides of the gate electrode of the semiconductor thin film 11. More specifically, η-type impurities. In this case, phosphorus (P) is ion-implanted at an acceleration energy of 20 keV and a dose of 4 X 1015 / cm2, thereby forming source and drain regions. . As shown in Fig. 10A, the final structure is irradiated with laser laser 'to activate phosphorus in the source and non-electrode regions. Next, as shown in FIG. 10B, a SiN-based film is deposited to a thickness of about 300 nm to cover the entire surface, thereby forming an interlayer insulating film 25. As shown in FIG. 11A, the gate electrode 24 for exposing the semiconductor film 11 and the contact hole% of the source and drain regions are formed in the interlayer insulating film 25. As shown in Fig. 11B, a metal thin film 27 made of aluminum or the like is formed to embed the contact hole 26. As shown in Fig. Uc, the metal thin film 27 is patterned to form a wiring 27, which connects the inter electrode electrode% and the source button region of the semiconductor thin film 经由 via the contact hole 26. Thereafter, a protective layer covering the entire surface is formed, and similar steps are performed to complete the n-type TFT. Channel TFT to detect. Fig. 12 shows the results of the experiment using the relationship between the TFT characteristics and the crystal quality manufactured in the above steps. When the crystal pattern of the channel area is a flowing pattern, the movement is higher than that in the laser laser pattern. The highest 470cm2 / Vs. The mobility is strongly related to the shape of the flow pattern. 535194 A7 B7 V. Description of the invention (Second modification) Figures 15A to 15D are schematic plan views for explaining the second modification. As shown in Fig. 15A, the a-Si thin film is processed into an island shape having almost parallel slits 32, and forms an island region. The upper surface of the a-Si thin film is a CW laser with a 6W energy, 400 / zm X 40 // m beam size, and a scanning speed of 20 cm / s, such as Nd: YV04 laser (2ω, wavelength 532 nm), Irradiate in the direction of the slot 32 (shown by arrows). The horizontal irradiation from the upper surface can crystallize the a-Si film normally. Assuming that the a-Si thin film is irradiated from the lower surface, the sample holder system is also heated to obtain a thermal insulation effect on the surface side of the thin film and easily obtain higher quality crystals. The a-Si thin film is melted and crystallized. Since the heat is diffused to the peripheral region, a high cooling rate is formed around the island region 6, thereby forming microcrystals. In the channel area 4, by appropriately selecting the irradiation conditions (energy and scanning speed) of the CW laser, the cooling rate can be set to be sufficiently low and formed to be number / m in width and number in length Ten // m of crystalline particles. At this time, as shown in Fig. 15B, the gap 32 prevents the crystal grains growing inward from the edge and the crystal boundary 1 from crossing the channel region. Only crystalline particles growing parallel to the gaps 32 are formed between the gaps 32. Assuming that the interval between the gaps 32 is sufficiently small, this region is formed from a single crystal. The gap width of each gap 32 is better. -25- (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 535194 A7 B7 V. Description of the invention ) As small as possible so as not to change the area between the gaps 32 into microcrystals, while maintaining the particle blocking effect of the gaps 32. The interval between the gaps 32 is set in blank according to the channel width of the component. As shown in FIG. 15C, the final structure is patterned by dry etching to set the single crystal portion between the gaps 32 as the channel region 4, thereby completing the TFT. As shown in Fig. 15D, a gate insulating film and a gate electrode are formed by a known method. After implanting and activating the impurities, a source and a drain are formed to manufacture a TFT. By using the crystallization using this method, a single crystal in a desired portion of a TFT channel region can be selectively obtained. In a TFT formed using an active semiconductor thin film prepared in this manner, only one crystalline particle exists in the channel region. Therefore, characteristics can be improved, and changes due to crystallinity and crystal grain boundaries can be greatly reduced. Furthermore, different processes can be performed on glass substrates, and high-value, high-performance displays can be provided with reduced costs. (Third Modification) Figures 16A to 16D are schematic plan views for explaining the third modification, and schematic sectional views taken along the line I · Γ. After the bottom layer of SiO2 and the a-Si film 2 were successfully formed on the glass substrate 1, the a-Si film 2 was formed into an island pattern, as shown in FIG. 16A. As shown in FIG. 16B, a Si02 film is formed on the a-Si film 2 by CVD or the like by about 50 nm -26- (Please read the precautions on the back before filling this page) Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 B7 5. Description of invention? 4) the thickness of the film, and processed into two parallel thin line patterns 33. As shown in FIG. 16C, the a-Si thin film 2 is irradiated and scanned with a CW laser from the upper surface. The irradiation conditions are the same as those of the first embodiment. At this time, the a-Si thin film 2 is melted and crystallized again by laser heating. However, since the thin line pattern 33 exists on the a-Si thin film 2, the melted Si system is easily aggregated due to surface tension, and a thin Si line 33a independent of the boundary is formed under the thin line pattern 33. The Si fine wire prevents the boundary between the crystal particles and the crystal particles from crossing the channel. As a result, crystalline particles grown only parallel to the fine lines are formed between the two fine line patterns 33. The Si02 film of the thin line pattern 33 is removed with an aqueous HF solution or the like. As shown in FIG. 16D, the final structure is subjected to a dry etching process so that a single crystal portion is disposed between the thin line patterns 33 as a channel region 4. Thereafter, a gate insulating film and a gate electrode are formed by a known method, thereby manufacturing a TFT. By using the crystallization using this method, a single crystal in a desired portion of a TFT channel region can be selectively obtained. In a TFT formed using an active semiconductor thin film prepared in this manner, only one crystalline particle exists in the channel region. Therefore, characteristics can be improved, and changes due to crystallinity and crystal grain boundaries can be greatly reduced. However, different processes can be performed on glass substrates and can provide high-value, high-performance displays with reduced fees. (Fourth improvement) The fourth improvement is almost the same as the manufacturing of the second improvement-27- (Please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297) C) 5. Description of the invention 25) Method, except that the shape of the gap is different. Figure 17 shows the shape of the gap in the fourth modification. Unlike the shapes of the slits in FIGS. 15A to 15C, a slit 32 is not completely parallel, but is slightly widened in the laser scanning direction. This shape is more effective in blocking crystalline grain boundaries diagonally inward from the surroundings. Furthermore, the crystalline particles extending from the lower side in the figure can be easily selected with a neck effect. The subsequent processing is the same as the second modification. (Fifth modification) Figures 18A to 18C are schematic diagrams for explaining the fifth modification. The upper part of Fig. 18A is a plan view of the pattern portion, and the lower part is a cross-sectional view taken along the line ι · γ. Figures 18B and 18C show the manufacturing steps following Figure 18A. ^ In an a-Si film 2, a film region 34 is surrounded by a thick film region 35. In the longitudinal direction of the thin film region 34, scanning and irradiation with a fw laser are performed (see Fig. 18a). At this time, since the thick film region 35 has a large heat capacity due to its thickness, the solidified cooling material is reduced. For this reason, the thick film region 35 has a thermal bath effect on the film region 34. In the thin film region 34, the boundary of the crystalline particles diffuses toward the surrounding thick film region 35 (see FIG. 8B). The density of the defects (the boundary of the crystalline particles) within the percent of the thin film region decreases. That is, high-quality crystallization can be performed. By using the thin film region 34 as a channel region of the TFT, a high-performance TFT can be implemented (see FIG. 18C). 535194 A7 B7 V. Description of the invention and) (Second Embodiment) A second embodiment of the present invention will be described below. The structure of the DPSS laser device used in the first embodiment will be explained below. Fig. 19 shows the appearance of the entire configuration of a DPSS laser device according to the second embodiment. The DPSS laser device includes a DPSS laser 41 of a solid-state semiconductor LD laser, an optical system 42 for irradiating a predetermined position with a laser beam emitted by the DPSS laser 41, and an XY base 43. The glass substrate is driven freely in the horizontal and vertical directions, and the glass substrate to be irradiated is fixed. In the second embodiment, the glass substrate is made of NA35 glass (non-alkaline glass), and the laser wavelength is 532 nm. The output variation in the energy beam is 0.1 rms% or less noise, the output instability is < ± 1% / h, and the output of the energy beam is 10 W. Note that the wavelength is not limited to this value, and any wavelength of a crystallizable silicon film can be used. The beam output is not limited to this value, and a device having a suitable output can be used. This energy beam forms a linear beam (rectangular beam) with a size of 400 / zmx 40 // m. The size and shape of the energy beam are not limited to this, and the energy beam can be adjusted to the optimal size required for crystallization. Using the center as the maximum intensity, the energy change in the longitudinal direction is within 40%. The glass substrate is set on the XY base-29 perpendicular to the optical axis. (Please read the precautions on the back before filling this page.) This paper size applies to China National Standard (CNS) A4 (210X297 mm) 535194 A7 B7 5. Description of the invention? 7) On stage 43. In the second embodiment, like the first embodiment, a semiconductor thin film (a-Si thin film) on which a TFT is to be formed is formed into a band shape or an island shape, as shown in FIG. 1A or 1B. Adjacent a-Si thin films are separated, and there are regions without a-Si thin films. This reduces thermal damage to the glass substrate used in this embodiment. The energy scanning speed is 20 cm / s. This embodiment uses a motor to drive the X-Y abutment 43. Note that the drive mechanism of the X-Y abutment 43 is not limited to this, and other abutments can be used as long as they can be driven at a speed of 15 cm / s or higher. Scanning with an energy beam can be performed by moving the energy beam relative to the X-Y base 43. That is, a movable energy beam or an X-Y abutment. When polycrystalline silicon is to be formed on a glass substrate, since the current substrate size is 400 mm X 500 mm, position control during scanning is important. The X-Y abutment 43 of this embodiment exhibits a position change of 10 // m or less at each meter displacement. The DPSS laser device of this embodiment can set the energy beam output instability to a value less than ± 1%, and preferably set the noise presenting energy beam instability to time to 0.1 rms% or lower. And supply a stable continuous beam. By scanning this continuous light beam, many TFTs act on the semiconductor film to uniformly form a crystalline state (flow pattern) with a large particle size. -Improvement- An improvement of the second embodiment will be described below. -30- (Please read the precautions on the back before filling this page) This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) 535194 A7 B7 V. Description of the invention 淖) (First improvement) Figure 20 Shows the entire structure of the DPSS laser device according to the first modification. This improvement uses an output stability of 0.1 rms% noise or less, an output instability of < ± 1% / h, and a DPSS laser 41 of 10 W output. The laser beams emitted by the two lasers 41 are multiplexed into an intermediate path along an optical path, thereby increasing output. The beam size is set to 800 // m X 40 / z m to illuminate a large area in the second embodiment. Similar to the first embodiment, this modification has functions of reading and irradiating position marks. The X-Y abutment 43 is placed horizontally, and a glass substrate is placed horizontally. A magnetic levitation type mobile mechanism is set in the irradiation / scanning direction, and a normal motor driving mechanism is used in the X-axis direction. The energy beam is emitted vertically. In addition to the effects of the second embodiment, the first modified DPSS laser device can supply a more stable continuous beam by setting the DPSS laser 41 (two sets in this case). By scanning this continuous light beam, many TFTs act on the semiconductor film to uniformly form a crystalline state (flow pattern) with a large particle size. (Second modification) Fig. 21 shows the entire structure of a DPSS laser device according to a second modification. This improvement uses the same output stability, output ^ and -31- (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) 535194 A7 B7 V. Description of the invention Xi) (Please read the precautions on the back before filling out this page) The two DPSS lasers 41 similar to the first modified condition, and irradiate different positions. Each energy beam has a function of reading the irradiation position from the position mark. In addition to the effects of the second embodiment, the second modified DPSS laser device can quickly supply a more stable continuous beam by setting the DPSS laser 41 (two sets in this case). By scanning this continuous beam, many TFTs act on the semiconductor film to uniformly form a crystalline state (flow pattern) with a large particle size. (Third Embodiment) Subsequently, a third embodiment of the present invention will be described. • Here, as in the second embodiment, the structure of a DPSS laser device and the crystallization method of a semiconductor thin film using the DPSS laser device will be described below. The difference between the DPSS laser device of this embodiment and the second embodiment is that the energy beam is diverged as follows. In this embodiment, an example of crystallization in a pixel region using a semiconductor laser (LD laser) solid-state laser (DPSS laser) Nd: YV04 is described. In this embodiment, a crystallization technique for a pixel region will be described, but the present invention is not limited thereto. The invention can also be applied to crystals used in any peripheral circuit. Laser systems are not limited to Nd: YV〇4. Similar DPSS laser light can also be used (for example, Nd: YAG or similar). The wavelength is 532 nm. The wavelength is not limited to this. Any wavelength can be used as long as it can melt the silicon. The stability of the energy output is < 0.1 rms% noise, the stability of the output time is < soil 1% / 11, and the output is 10W. 535194 A7 B7 V. Description of the invention 3 (0) As a non-crystalline substrate, a NA35 glass substrate is used. The amorphous base material is not limited thereto. Other non-alkaline glass, quartz glass, single crystalline substrate with amorphous insulation, ceramic or plastic can be used. A buffer layer made of SiO2 with a thickness of about 400 nm is formed between the glass substrate and the semiconductor thin film. The buffer layer is not limited thereto. It can be a multilayer thin film of SiO 2 and SiN. The semiconductor thin film is a silicon thin film formed by a plasma CVD method with a thickness of about 150 nm. Prior to irradiation with an energy beam, a heat treatment for dehydrogenation was performed at 500 ° C for 2 hours. The dehydrogenation system is not limited to this heat treatment. This can be achieved by repeatedly irradiating the beam with an energy beam gradually increasing from the low energy side. In this embodiment, the irradiation is performed from the semiconductor film side, but it can be irradiated from the back surface side through the glass. -Structure of DPSS Laser Device Fig. 22 is a schematic diagram showing a part of a DPSS laser device according to this third embodiment. The DPSS laser device includes a solid-state semiconductor laser DPSS laser 41 (not shown) similar to the second embodiment, and one for splitting the optical emission from the DPSS laser 41 into several sub-beams (in this illustrated example, (7 sub-beams), a diffraction grating 51 of a beam diverging device, a parallel lens 52, a condenser lens 53 for collecting the divergent sub-beams, and an XY abutment 43 (not shown), similar to the first In the second embodiment, the size of the basic paper on which the glass to be irradiated is installed is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -33- (Please read the precautions on the back before filling this page)

可可 Φ 535194 A7 B7 5. Invention Description 3 (1) material, and it can be driven horizontally and vertically freely. Although the diffraction grating 51 is used as the beam diverging means in this embodiment, the beam diverting means is not limited thereto. For example, the user can also use a polygon mirror, a movable mirror, an A0 device (acoustic-optical device) using auditory effects, or an E0 device (electro-optical device) using electric field optical effects. Each secondary beam has a size of 80 μm X 20 μm, which is sufficient to form a thin film transistor in the pixel area. Each secondary beam has a rounded beam shape, with the maximum intensity at the center of mass. The beam shape is not limited to this elliptical beam shape. A long linear beam (or a rectangular beam) can also be used. The size of the energy beam is not limited to the above. Any beam size can be used as long as it can form a pixel TFT. In this embodiment, the silicon regions of each pixel TFT to be formed are band-shaped, as shown in FIG. Each semiconductor thin film tape 54 is separated from an adjacent semiconductor thin film tape 54 on either side, and there is an area where a semiconductor film-free portion is interposed. This is used to reduce thermal damage on the NA35 glass substrate used in this example. The pattern of the semiconductor thin film is not limited to this strip shape. An island pattern can also be used. Since such a pixel TFT does not need such a high efficiency, the energy intensity of the beam used for crystallization can be reduced compared to the surrounding area. For this reason, even if amorphous silicon is formed on the entire surface, crystallization can be performed without damaging the glass substrate. -34- (Please read the precautions on the back before filling in this page) This paper size is applicable to the Chinese National Standard (CNS) A4 size (210X297 mm) 535194 A7 B7 V. Description of the invention) Figure 23 shows the use of four DPSS A schematic diagram of the state of the laser generating a total of 28 secondary beams. In the crystallization technology of the pixel TFT in this embodiment, the scanning speed of the energy beam is 100 cm / sec. The speed of scanning the seedlings is not limited to this value. Any scanning speed can be used as long as it can achieve the required pixel TFT performance. In order to illuminate the entire surface of the pixel area, the 28 beams in the block are moved in parallel to crystallize 28 lines each. The entire surface of the pixel region is thus crystallized with improved productivity. In this embodiment, this operation is performed by rapidly moving the X-Y abutment 43. However, the present invention is not limited to this method. The 28 beams can be moved in the block while the X-Y abutment 43 is fixed. In this embodiment, the number of sub-beams is 28. However, the number of secondary beams is of course not limited to this value. The beam irradiation method is not limited to the one shown in FIG. The irradiation method as shown in Figure 24A is also suitable. In this example, a plurality of (the illustrated example is two) laser systems are each divided into a plurality of (the illustrated example is three) sub-beams. These sub-beams move to scanning without overlapping each other. In this example, the lateral displacements within the operations of each scan can be shorter in distance. Furthermore, for example, the irradiation method as shown in FIG. 24B can also be suitably used. In this implementation, each DPSS laser 41 emits an energy beam. The energy beams emitted from the respective DPSS lasers 41 move without overlapping each other. This irradiation method -35- (Please read the precautions on the back before filling this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 B7 V. Preliminary description of the invention) It is particularly effective for the needs Peripheral circuits crystallized with higher energy. Of course, this illumination method is used for the pixel area. As a result of observing the crystalline particles in the beam lines formed by the method shown in FIG. 23, it was confirmed that polycrystalline silicon having a crystal particle size of 300 nm was formed. -Manufacture of TFT TFT is manufactured by crystallizing a semiconductor thin film using a DPSS laser device of this embodiment using an active semiconductor thin film. The manufacturing method of the TFT is the same as that in the first embodiment described with reference to Figs. 8 to 11. In this embodiment, the semiconductor thin film system to be crystallized forms a stripe pattern, in which the 50 μm wideband system is arranged at certain intervals to conform to the pixel configuration. The wavelength is 532 nm. The output is 10 W. The stability of the energy beam is <0.1 rms% noise. Output stability is &lt; ± l% / h. The shape of the energy beam is an ellipse of 80 μη X 20 μηι. The scanning speed is 100 cm / sec. Crystallization proceeds under the above conditions. When the mobility of the TFT obtained by the same method as that in the first embodiment described with reference to Figs. 8 to 11 was measured, it was about 20 cm2 / Vs. This value shows a performance that is sufficient for practical use as a pixel transistor. -Improvement- An improvement of this third embodiment will be described below. The following description, as shown in Figure 25, is used to selectively -36- (please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 B7 V. Description of the invention Wei) An effective crystallization method that crystallizes only in the area where the TFT is to be formed. Fig. 26 is a schematic diagram of an irradiation system of a DPSS laser device used in the modification of this embodiment. Referring to FIG. 26A, an illumination system A is composed of a fixed mirror 61 for reflecting a square beam in a predetermined direction, and a movable mirror for further reflecting a light beam reflected by the fixed mirror 61 in a predetermined direction to illuminate a target area. Composed of a mirror 62. This irradiation system A is used for the respective sub-beams. Referring to FIG. 26B, an illumination system B is composed of a fixed mirror 63 for reflecting the secondary beam to a predetermined direction, a parallel lens 64, and a beam for reflecting the light reflected by the fixed mirror 63 through the parallel lens 64 to The condenser lens 65 irradiates the target area. This irradiation system B is used for each sub-beam. In addition to moving the X · Y abutment 43, the optical system shown in Fig. 26A or 26B is provided for each sub-order beam. Either of the optical systems is designed to scan only the area used to form each TFT. That is, the range of each beam displacement is less than 100 μm at most. When the X-Y base 43 is rapidly moved, the optical system at each pixel position is turned on to crystallize the pixel portion. This leads to an increase in productivity. In this embodiment, the amorphous silicon can be formed on the entire surface of the substrate, or a strip or island pattern can be formed. In any case, the portion to be illuminated by the laser beam must of course match the arrangement of the pixel area. -37- (Please read the notes on the back before filling in this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 B7 V. Description of the invention $) (Fourth embodiment) Then, A fourth embodiment of the present invention will be described below. Here, similar to the second embodiment, the structure of a DPSS laser device and the crystallization method of a semiconductor thin film using the DPSS laser device will be described below. The DPSS laser of this embodiment is different from the second embodiment in that the laser beam can be selectively applied to any portion as described below. In this embodiment, the a-Si thin film is not processed into an island pattern in advance, but it remains as if it is not patterned. In this case, an energy beam whose size is limited to approximately the width of each island (about 100 μm or less) is used to irradiate intermittently while moving the X-Υ abutment. In this way, a crystalline region (melted region) corresponding to each island in the first embodiment is obtained. In this way, the problems of damaging the glass substrate and the peeling film can be avoided. In the case where it is applied to an LCD and the peripheral circuit area is highly concentrated and it requires TFTs to have better crystallinity and higher mobility, the pixel area contains individual TFTs used at relatively large intervals and each TFT need not be so high Area of mobility. However, the area occupied by the pixel area is much larger than the area occupied by the peripheral circuit area. In this way, in the pixel area, the X-Y abutment system moves at a high speed (approximately several m / s), and the crystal system is directly executed only on the required part, thereby significantly improving the productivity. -The structure of the DPSS laser device-Figure 27 shows -38- according to the fourth embodiment of the present invention (Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification ( 210X297 mm) 535194 A7 ________B7 _____ 5. Description of the invention? 6) A schematic diagram of the main part of the DPSS laser device. The DPSS laser device includes a solid-state semiconductor LD laser laser 41 similar to the second embodiment, an optical system 7 having a function of a parallel lens and a function of a condenser lens; 1. an optical path (reached by this energy beam system) An a-Si film 70) on a glass substrate is an alternating current converter (chopper) 72 which is an intermittent emission device. The chopper 72 has an ON region 72a and an OFF region 72b for the energy beam. Rotate in the direction of the arrow to allow the energy beam to pass intermittently, a mirror 73 for reflecting the energy beam having passed through an ON area 72a to the glass substrate, and an XY abutment 43 (not shown), similar to the second In an embodiment, it can be driven horizontally and vertically freely. Using this DPSS laser device, a CW laser light, such as Nd: YAG laser light (2ω, wavelength: 532 nm), is formed into a beam size of 20 μm x 5 μm via the optical system 72. In this case, it is effectively scanning in the direction of the arrow shown in FIG. 28. This is effective even in the case as shown in FIG. 1, but is not limited to intermittent irradiation with intermittent irradiation with an energy beam. Fig. 28 is a schematic diagram showing an example of the TFT arrangement in the pixel area. In this embodiment, each pixel has a size of 150 μm × 50 μm, and the TFT region may have a size of 10 μm × 15 μm. Next to the Si02 buffer layer (thickness: 200 nm) followed by an a-Si film (thickness of this paper applies Chinese National Standard (CNS) A4 specifications (210X297 mm) -39- (Please read the precautions on the back before filling (This page)

Order I 535194 A7 B7 V. Description of the invention (7) 150 nm) is formed on a glass substrate, and the AC converter 72 is rotated. The energy beam is turned ON / OFF at a speed of 7.5 ps / 17.5 ps and is applied at a scanning speed of 2 m / sec (the speed of the X-Y abutment). In this method, the a-Si film is not processed into an island pattern, the glass substrate and the peeling film are not damaged, and only a desired portion of the a-Si film can be selectively crystallized (for example, the crystalline region 74 in FIG. 27). ). In this case, it is preferable that the energy beam is intermittently applied to portions of the a-Si film rather than the area where the TFT is to be formed to crystallize and form a position mark 75 (FIG. 27) having a predetermined shape, and these Symbol 75 (FIG. 27) is used as a crystal pointer of an a-Si thin film. When the crystallization of an a-Si thin film is performed in the above method, CW laser can be used to obtain large particle crystals, and this does not increase the processing steps and time. In a TFT formed by crystallization from this large particle, its characteristics can be improved and unevenness due to crystallization can be reduced. Therefore, a high-performance liquid crystal display device with added value can be obtained at a reduced cost. -Improvement · An improvement of this fourth embodiment will be described below. (Modification 1) In this modification, a crystallization method of an a-Si thin film for a TFT in a peripheral circuit of a liquid crystal display device will be described. In the peripheral circuit area, the degree of assembly is higher than the pixel area. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -40- (Please read the precautions on the back before filling this page) Order—; φ. 535194 A7 __ B7 V. Explanation of the invention? 8) Within the domain ', and the requirements for closing date are not strict. As the regions to be formed Tft ', crystalline regions each having a size of 50 μm × 200 μm are formed at intervals of 5 μm. A circuit system is formed in each crystal region. For this purpose, a cw laser system forms a beam size of 50 μηι 5 0111 via an optical system. After a buffer layer (thickness: 200011111) and an a-Si film (thickness: 150 nm) are formed on a glass substrate, the AC converter 72 is rotated. The energy beam is generated at ON / OFF at a rate of 1 ms / 0.025 ms and is applied at a scanning speed of 20 cm / sec (the speed of the X-Y abutment). By reducing the scanning speed to about 20 cm / sec, flowing long crystalline particles (flowing patterns) can be obtained, thereby forming a TFT with high mobility. In this method, the a-Si film is not processed into an island pattern, the glass substrate and the peeling film are not damaged, and a high-quality crystal can be formed at a desired portion. (Improvement 2) In this improvement, the intermittent emission device for generating the energy beam ON / OFF is achieved by a combination of a small hole and a mirror. Fig. 29 is a schematic diagram showing a main part of a DPSS laser device according to this modification 2. In addition to the DPSS laser 41 and the optical system 71, the DPSS laser device includes a rotatable mirror for feeding energy beams in a desired direction instead of the AC converter 72. The DPSS laser device further includes a device for allowing the energy beam to apply the Chinese National Standard (CNS) A4 specification (21 × 297 mm) at the paper size -41- (Please read the precautions on the back before filling this page )

May I Φ 535194 A7 B7 V. Description of the invention $ 9) Interrupting plate 76 of the small hole 76a passing through in the direction you want. In this modification, the mirror 77 is rotated to swing the energy beam. The energy beam is ON only when it passes through the hole 76a. As a device for swinging the energy beam, a rotatable polygon mirror can also be used. (Modification 3) Fig. 30 is a schematic diagram showing a main part of a DPSS laser device according to this modification 3. This modified DPSS laser device has almost the same structure as that of the third embodiment, but the difference is that the AC converter 72 is processed and accompanied by several mirrors. In this modification, a predetermined one of the ON areas 72a of the AC converter 72 is stopped by an interruption plate 81 that reflects the energy beam. A plurality of mirrors 82 are provided to reflect the energy beams which have been reflected on the respective interruption plates 81 in a predetermined direction. With this structure, the energy beam reflected on the interruption plate 81 is converted into adjacent lines irradiating the a-Si thin film 70a and adjacent adjacent lines. With a pixel size of 50 μm X 150 μxη and a TFT area size of 15 μm X 10 μm as shown in Figure 28, about 2/3 of the cat scan period is OFF. Since two adjacent lines are illuminated during this OFF period, three lines can be illuminated during each scanning period. Therefore, the processing time can be shortened to about 1/3. During the scanning period with the X-Y abutment 43, the non-irradiation time is several times longer than the irradiation time, so that during the non-irradiation time, the energy beam is rapidly moved to the adjacent line one by one. Borrow -42- (Please read the precautions on the back before filling in this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 B7 V. Description of the invention 4) This can reduce idle time , Which can increase productivity. (Please read the notes on the back before filling this page) As mentioned above, according to this improvement, by limiting the energy beam of the cw laser to 100 μηι or lower, and applying it intermittently, it can be used without damaging the glass substrate. Under the material and peeling film, large particle crystals are formed. In addition, by irradiating adjacent lines during the unirradiated time of the first line, several lines can be crystallized during each scanning period, thereby increasing the productivity. This makes it possible to suppress non-uniformity of TFT characteristics depending on the boundary or size of crystal grains, and to obtain good device characteristics. As a result, a high-quality liquid crystal display device having a driving circuit incorporated therein can be provided. (Modification 4) Fig. 31 is a schematic diagram showing a main part of a DPSS laser device according to this modification 4. This modified DPSS laser device has almost the same structure as the modified 3, but the difference is that a polygon mirror is used instead of the AC converter 72. In addition to the DPSS laser 41 and the optical system 71, this modified DPSS laser device includes a polygon mirror 83 instead of the AC converter 72, and a plurality (illustrated here as three) for allowing only energy beams The interruption plate 84 in the hole 84a passing in a predetermined direction according to the direction of the energy beam reflected on the polygon mirror 83. In this modification, the polygon mirror 83 is rotated to oscillate the energy beam, and thereby, three lines on the a-Si film 70 are simultaneously irradiated during a scan. However, the paper size for the first line of irradiation is subject to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 43 _ 535194 A7 B7 V. Invention Description 41) (Please read the precautions on the back before filling this page) Later, since the XY abutment 43 has moved, the irradiated part of the second line (the position of the hole 84a) must be located in accordance with the movement of the X_Y abutment 43 in advance. The same applies to the third line. According to this improvement, similar to Modification 3, large particle crystals can be formed without damaging the glass substrate and the peeling film. In addition, by irradiating adjacent lines during the unirradiated time of a line, several lines can be crystallized during each scanning period, thereby increasing productivity. In the fourth embodiment and its modifications 1 to 4 as shown in Figs. 27 to 31, the energy beam is scanned in the direction of the black arrow to scan the X-Υ abutment to be moved. When scanning one line, the energy beam moves in a narrow arrow direction to scan the next line. (Fifth Embodiment) Subsequently, a fifth embodiment of the present invention will be described below. In this embodiment, in order to manufacture a TFT, an a-Si thin film is crystallized by a CW laser, similarly to the first to fourth embodiments. At this time, this embodiment is mainly to prevent the a-Si film from peeling off due to the temperature rise of the buffer layer irradiated with the energy beam. This embodiment discloses a TFT with a suitable buffer layer. It is known that the use of SiN or SiON as a buffer layer material formed between a glass substrate and an a-Si thin film is effective in preventing contamination caused by impurities such as sodium of the glass constituting the substrate. Figure 32 shows the results obtained by measuring the hydrogen distribution in an unmodified elementary layer after formation. When the energy beam that generates energy continuously with time, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 B7 V. Description of the invention 42) (Please read the notes on the back before filling (This page) In the example, CW laser is used to crystallize an a-Si thin film formed on a substrate with a buffer layer including SiN or SiON interposed therebetween, because the buffer layer absorbs the energy beam (or when a-Si The heat transfer during film melting), the temperature rises. When the density of hydrogen in the buffer layer is high, the overflow of hydrogen atoms occurs, and pinholes that cause the film to peel off are generated. When the density of hydrogen in the a-Si thin film is high, the system overflows and pinholes occur. When the density of both is high, as shown in FIG. 33, the a-Si film is peeled off due to pinholes. This phenomenon is particularly noticeable when using a continuous energy beam as compared to crystallization using a conventional laser laser. Therefore, in this embodiment, as shown in FIG. 34, an a-Si film 93 is formed over a glass substrate 91 with the buffer layer 92 interposed therebetween. The buffer layer 92 is a multilayer film made of a thin SiN or SiON film 92a and a Si02 film 92b having a thickness of about 400 nm. Before crystallizing the a-Si thin film 93 with a CW laser, the density of hydrogen in either the a-Si thin film 93 or the thin film 92a is adjusted. More specifically, the density of hydrogen in the a-Si film 93 is adjusted to 1 X 10 2 G / cm3 or lower, and the density of hydrogen in the film 92a is adjusted to 1 X 1022 / cm3 or lower. low. By providing the Si02 film 92b, the density of the interface state between the Si film and the buffer layer can be reduced. In addition, when the CW laser energy beam is irradiated, since the SiN is not directly irradiated with laser light, Side irradiation is better than irradiation from the lower surface side of the substrate. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) -45-535194 A7 B7 V. Description of Invention 44). [Convenient density of hydrogen in SiN film] The experimental results obtained by detecting the appropriate density of hydrogen in the SiN film constituting the buffer layer will be described below. As shown in FIG. 34, a thin SiN film 92a having a thickness of about 50 nm, and a second Si02 film 92b having a thickness of about 200 nm are formed on a glass substrate 91 by a P-CVD method to form a buffer. Layer 92. An a-Si film 93 having a thickness of about 150 nm is then formed thereon. The thickness of each film is not limited to the above-mentioned values. Subsequently, the a-Si thin film 93 was dehydrogenated by heat treatment under nitrogen pressure at 450 ° C for 2 hours. In the SIMS analysis, it was confirmed that the density of hydrogen in the thin SiN film 92a became 1 × 1022 / cm3 or lower. At this time, the density of hydrogen in the a-Si thin film 93 is 1 × 102 () / cm3 or lower. The a-Si thin film 93 was subjected to a semiconductor laser (LD) under the conditions of an output of 6.5 W, a scanning speed of 20 cm / sec, and a wavelength of 532 nm (the second harmonic of Nd: YV〇4). Laser) solid-state laser (DPSS laser) Nd: YV04 for crystallization. Scan by moving the X-Y abutment. As a result, a good crystal similar to that shown in Fig. 36 was obtained. As described above, according to this embodiment, it becomes possible to use a crystal that continuously outputs energy over time to highly uniformize the transistor characteristics of the TFT, and to form it stably without pinholes and peeling -47- (Please (Please read the notes on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 _B7 _ V. Description of the invention 45) TFT, thereby realizing a very highly reliable TFT. In the above embodiments, the a-Si thin film is used as a semiconductor thin film. However, the present invention can also be applied to any situation where the initial thin film is a p-Si thin film formed by the LPCVD method, a p-Si thin film grown by a solid phase, and a p-Si thin film grown by solid induction. Si film, or the like. The present invention can achieve a TFT, in which the transistor characteristics of the TFT can be made highly uniform, and the mobility in the peripheral circuit area is particularly high, so as to be applied to the peripheral integrated circuit TFT-LCD, system panel, system glass, and These and the like can be highly driven. Furthermore, according to the present invention, it becomes possible to compensate for the shortage of energy beams that continuously output energy over time, so that the productivity of crystallization of a semiconductor thin film is increased, thereby realizing that its mobility is particularly high in the peripheral circuit area and driven at high speed. High-performance TFT 〇-48-(Please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 535194 A7 -One B7 —--- '-One —-—-V. Description of the invention 46) 1 Glass substrate light laser) 2 a-Si film 42 Optical system 3 Energy beam 43 Abutment 4 Channel area 51 Diffraction 5 Impossible area 52 Parallel lens 6 Island area 53 Condensing Optical lens 11 Acting semiconductor film 54 Semiconductor thin film 21 NA35 glass substrate 61 Fixed mirror 22 Si02 buffer layer 62 Movable mirror 23 Silicon oxide film 63 Fixed mirror 24 Aluminum (aluminum alloy) film 64 Parallel lens (gate electrode) 65 Condensing lens 25 Interlayer insulating film 70 a_Si film 26 Contact hole 71 Optical system 27 Metal film 72 AC converter 31 Position mark 72a Wheel area 32 Gap 72b Interrupted area 33 Parallel thin line pattern 73 Mirror 33a Si thin line 74 Crystal area 34 Thin film area 75 Position mark 35 Thick film area 76 Break plate 41 BPSS laser (LD laser 76a The size of this paper is applicable to Chinese national standards ( CNS) Α4 Specification (210X297mm) -49- (Please read the notes on the back before filling in this page j

535194 A7 B7 V. Description of the invention 77) Mirror 81 Break plate 82 Mirror 83 Polygonal mirror 84 Break plate 84a Hole 91 Glass substrate 92 Buffer layer 92a SiON film 92b Si02 film 93 a-Si film-50- (Please read the back first Please note this page before filling in this page) This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm)

Claims (1)

VI. Patent Application Fanyuan No. 90120943 Patent Application Amendment of Patent Scope 1 A method for manufacturing a semiconductor device, the date of the basin's positive: March 1991. # The pixel area around the tool and the peripheral circuit area are set Each of the regions at a base π Φ s 蛐 ′ includes a thin solar cell. The method includes the following steps: forming a semiconductor thin film at least on the image region and the periphery in the peripheral circuit region. In the circuit area, and: crystallizing the film with an energy beam having a continuous output of energy with respect to time, so that the film can be used as a semiconductor for each thin film transistor, and a semiconductor laser solid-state laser system is used as the energy beam. 2. As in the method of applying for the first item of the patent scope, the first medium &gt; ^. &Quot; Bajia 5hai + conductor film is formed on the side substrate to form a linear or island pattern. 3. As for the method in the second item of the scope of patent application, the marks in π &amp; /, 1 used to adjust the position of the shot with the energy beam are set on the substrate, 隹 °, to correspond to the formation Patterned semiconductor film. 4. According to the method of claim 1 in the scope of the patent application, 1 中, αα ^ β ^ Yazhong 导体 + conductor film is formed on the substrate to form a pattern to have parts with different thicknesses. 5 · According to the method of claim 4 in the scope of patent application, the thickness of the conductor film in each of A and the conductor film is surrounded by the thick portion of the semiconductor film, and the semiconductor film is generally formed in the thin portion. The energy beam moving in the longitudinal direction is irradiated. 6. According to the method of claim 4 in the scope of patent application, the compounder, ^, ,,, and A form a channel region of a thin film transistor to correspond to the thin portion of the semiconductor thin film. 7. A method for manufacturing a semiconductor device, in which the pixel region and peripheral circuit region around xt are arranged on a substrate, each of which includes a thin 535194 A8 B8 C8 The film transistor includes the following steps: a region and the peripheral circuit region forming a semiconductor thin film at least in the peripheral circuit region within the pixel domain, and crystallization of an energy beam using a semiconductor film having its energy continuously rotated over time The gap is formed in the semiconductor thin film, and the semiconductor thin film is irradiated with an energy beam that moves in the longitudinal direction of the gap. 8. The method according to item 7 of the scope of patent application, wherein adjacent gaps in the semiconductor film are separated from each other by a gradually changing distance therebetween. 9. The method according to item 7 of the "Patent Scope", wherein the two gaps are: formed in the semiconductor thin film, and a crystalline region obtained by irradiating with the energy beam is used as a channel region of the thin film transistor. 10. A method for manufacturing a semiconductor device, wherein a pixel region and a peripheral circuit region around the semiconductor element are disposed on a substrate, each of which includes a thin film transistor. The method includes the following steps: Formed in the pixel region and the peripheral circuit region in the peripheral circuit region, and crystallizing the semiconductor thin film using an energy beam having continuous output of energy with respect to time, wherein the field-shaped insulating film is formed on the semiconductor On the thin film, and the semiconductor thin film is irradiated with an energy beam moving in a substantially longitudinal direction of the insulating film. 11 · The method according to item 10 of the scope of patent application, wherein the adjacent thin film on the semiconductor film is separated from each other with a gradually changing distance. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) -2-535194, the scope of patent application comes. u · As in the method of applying for the scope of the patent No. 10, compound. / 、 平 — # Bayan thin film instrument is formed on the semiconductor thin film, and the crystalline region obtained by irradiation with the ... Used as a channel area for thin film transistors. 13. A method of manufacturing a semiconductor device, wherein a pixel region and a peripheral circuit region around the semiconductor element are disposed on a substrate, and each region is a coated transistor. The method includes the following steps: The semiconductor region includes at least a semiconductor region. Formed in the pixel region and the peripheral circuit region within the peripheral circuit region, and using an energy semiconductor film with continuous output of its energy versus time, wherein only the portion where the thin film transistor is to be formed is suitable for the crystallization of the energy beam Energy was irradiated, and no thin-film transistor-forming portion was quickly skipped. 14. A method of manufacturing a semiconductor device, wherein a pixel region and a peripheral circuit region around the semiconductor element are disposed on a substrate, and each region includes a film transistor. The method includes the following steps: forming a semiconductor thin film at least In the pixel region and the peripheral circuit region in the peripheral circuit region, and using an energy% beam crystalline semiconductor film having its energy continuously elapsed over time, wherein the δH semiconductor film is intermittently irradiated with the energy beam so that ; Only the part where the thin film transistor is to be formed is selectively crystallized. 15. The method of item 14 in the scope of patent application, in which the paper size is controlled by the Chinese National Standard (OB) A4 specification (210X297 cm) 535194 A8 B8 C8 Sixth, the scope of patent application ~ &quot; --- The literacy speed on the material and the time schedule of the intermittent irradiation, during the interval of the irradiation period of the adjacent portion of the semiconductor thin film used to form a thin film transistor, the energy beam It is quickly moved to another portion where a thin film transistor is to be formed to crystallize the portion. 16. The method of claim 14 in which the energy beam is intermittently applied to a portion where the thin film transistor is not formed to form a position mark having a predetermined crystal shape for the thin film transistor. For example, the method of any one of items 7, 10, 13, and 14 of the scope of the patent application ^, wherein the irradiation with the energy beam in the pixel region is performed under a different condition from that in the peripheral circuit region. 18. The method according to any one of the claims i, 7, 10, 13 and members of the scope of the patent application, wherein the semiconductor thin film formed in the pixel region is crystallized using a pulsed energy beam and formed in the peripheral circuit. The semiconductor thin film in the region is crystallized using the energy beam having its energy continuously output with time. 19. The method of claim 18, wherein the semiconductor thin film formed in the peripheral circuit region is crystallized and recrystallized after the semiconductor thin film formed in the pixel region. 20. A method as claimed in any of claims ^ 7, 13 and μ, wherein the semiconductor thin film formed in the peripheral circuit area is crystallized using the energy beam having its energy continuously outputted over time. Is used to act as a semiconductor film, and the semiconductor film formed in the pixel region is used to act as a semiconductor film without this crystal. 21 · If you apply for the method of item 20 of the patent scope, in which the peripheral circuit is formed, the paper size is applicable to China National Standards (CNs) A4 specifications (210X 297 public love) (Please read the precautions on the back before filling this page ) 535194 The patented semiconductor thin film or the thin semiconductor film is applied to the semiconductor film formed on the peripheral circuit, and the semiconductor film is removed by using the energy beam that continuously outputs its energy over time. hydrogen. In particular, if a semiconductor thin film and a gate oxide thin film of any one of items 1, 7, 10, 13 and 14 of the scope of application for a patent are formed in one of the peripheral circuits of the image-like product or the human body Inside, at least or both of the gate oxide film of the semiconductor film and the pixel region are different in thickness from the peripheral circuit region. For example, one of the 1, 7, 10, 13 and 14 scope of the patent application of COSCO Group / COSCO This s beam is moved to scan the semiconductor film. Consider the method of claim 23, wherein the energy beam is moved flat / short side of a rectangular pixel to hide the semiconductor thin film formed in the peripheral road region. 22. The method according to item 23 of the scope of patent application, in which the direction of the scanning eye is parallel to the direction of current flow in a part of the acting semiconductor film with the energy beam as a channel area. 26. The method according to any of claims 1, 7, 10, 13 and 14, in which the semiconductor thin films at different positions are simultaneously irradiated with an energy beam having a continuous output of energy at the same energy time. 27. The method of claim 23, wherein the scanning speed of the energy beam is controlled to be not less than 10 cm / see. 28 · If the scope of patent application is the first! The method of any one of 7, 7, 10, 13 and 14 wherein the output instability of the light beam in month A is controlled to be less than ± 1% / h. 29. If the method of applying for the scope of patent No. 28, which shows the method of the energy beam (please read the notes on the back ¾ then fill in this page) Order-This paper size applies Chinese National Standard (CNS) A4 Specifications ^^ 194 The noise (optical noise) of the patent application Fan Yuan is controlled to be not more than 0%.虮 If any of the scope of patent application No. 7, 10, 13 and 14 is applied. In other words, the energy beam is obtained by a cw laser. = · As in the method of item 3G of Zhongzhong's patent scope, wherein the cw laser is-a solid body laser of V-body laser. 32. The method according to any one of claims 1, 7, 10, 13, and 14, wherein the active semiconductor thin film is formed into a crystalline state having a streamlined flow pattern using the energy beam. / ;, L 33. The method according to any one of items Ϊ, 7, 10, ^ and "in the scope of patent application, wherein the substrate is made of non-alkaline glass or plastic, and The irradiation is performed from above or below the substrate. 34. The method according to any one of claims 1, 7, 10, ^ and ^, wherein the energy beam is optically branched into a sub-beam, And different parts of the semiconducting film are irradiated with the secondary beam at the same time to be crystallized. 35. For example, the method of the scope of patent application No. 34, wherein each of the secondary beams is applied so as not to overlap each other. Method of any one of 7, 7, 10, 13 and 14, wherein at least two parts of each thin film transistor to be formed are under different conditions of one of an eye-catching seedling degree, an energy intensity, and a beam shape Conclusion ... 37. If the method of any one of the scope of patent application !, 7, 10, 13 and 14 is used, wherein the semiconductor thin film is filled on the substrate with a buffer layer interposed therebetween, the The layer includes a thin film containing Si and N ^ Si, 0, and N, and hydrogen in the semiconductor thin film Density control 4 is not greater than 1 X l02 () / cm3. Square volume, square light, square speed, or square size of this paper are applicable to China National Standard (CNS) A4 specification (210X297). 6-f Please read the back first Note for refilling this page; J 535194 A8 B8 C8 D8, scope of patent application 3 8. For the method in the scope of patent application item 37, the degree of hydrogen in the film is controlled to be not more than 1 X 102 / em3. 39. The method of claim 37, wherein the dehydrogenation of the semiconductor thin film is performed after the semiconductor thin film is formed or after the semiconductor thin film is patterned. 40. The method according to any one of the items i, 7, 10, 13 and 14 of the scope of patent application, wherein the device reads and memorizes the position of the mark set on the substrate as the energy beam. The irradiation position is adjusted, and irradiation with the energy beam is performed according to the position. 41 · A semiconductor manufacturing device for emitting an energy beam, the energy beam is used to crystallize a semiconductor film formed on a substrate, wherein the device can continuously output a plurality of the energy beams with time, and has a relative The function of moving the energy beam to scan the target to be irradiated, and the output instability of the energy beam is less than ± 10/0 / h. 4) If the device of the scope of patent application No. 41, the noise (optical noise) showing the instability of the energy beam is not more than 0.1 rms%. 43. The device according to item 4i of the scope of the patent application, in which the knowing field velocity of the energy beam is not less than 10 cm / sec. Among them, the device can emit 44. A device such as item 41 of the patent application has an energy beam whose energy is output intermittently. The energy beam is (please read the precautions on the back before filling out this page)-Order I 45. If the device in the scope of patent application No. 41 is obtained by a CW laser. 46. For the device in the 45th scope of the patent application, the (:: ^ ¥ laser is a semiconductor laser solid-state laser. This paper size applies to China National Standard (CNS) A4 specification (210X297)) A8 B8 C8 D8. Patent application park 47. A semiconductor manufacturing device, which includes: Thin film: Hi I Its: The substrate on it is carried to-forming a semiconductor (Please read the precautions on the back before filling in this page}, , So that the substrate can be moved on a plane parallel to the surface of the semiconductor film; a laser oscillator, which has a function of continuously outputting an energy beam over time; and a beam knife, which is used for The laser vibrator divides the energy beam into secondary beams. 48. For example, the device in the scope of patent application No. 47, wherein the output instability of the energy beam is less than ± 10/0 / h. 49 · 如The device in the scope of patent application 48, wherein the energy beam is obtained by a custom 丨 a CW laser. 50. The device in the scope of patent application 49, in which the cw laser is a semiconductor laser solid-state laser 51 · As in the material The device of the range item 48, wherein the noise (optical noise) showing the instability of the energy beam is not more than 01 rms%. 52 · —A semiconductor manufacturing device, including: It is used to carry the substrate on it to a surface forming a semiconductor film, so that the substrate can be moved on a plane parallel to the surface of the semiconductor film; a field-emitting oscillator, which has a continuous output for time The function of an energy beam; and an intermittent emission device to allow the energy beam to pass intermittently at noon. 53. The device according to item 52 of the patent application, which further includes 535194 Shen Qing Patent Fan Yuan The laser vibrator optically splits the energy beam into a beam splitter of a secondary beam. 54. The device as claimed in claim 52, wherein the output instability of the energy beam is less than ± 10/0 / h. 55. The device of claim 54 in which the energy beam is obtained from a CW laser. 56. For example, please apply for item 55 of the patent scope, where the cw laser is a semiconductor laser solid-state laser. 57. For the device in the scope of application for patent No. 54, the noise (optical noise) showing the instability of the energy beam is not more than Q ·%. 58. The device of claim 52, wherein the intermittent emitting device has a -transmission area and -interruption area for the energy beam. 59. A semiconductor manufacturing device for emitting an energy beam for crystallizing a semiconductor film on a substrate, the apparatus comprising: a laser oscillator having a continuous output over time The function of an energy beam; wherein the device has a function of relatively moving the energy beam to scan a target to be irradiated, and wherein the energy 1 beam is a semiconductor laser solid-state laser and is formed into a linear or elliptical pattern. y This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the notes on the back before filling this page) -9 535194 No. 90120943 Patent Application Schematic Correction Page January 17, 1992 Minus 15 AMIM5BaMi150®n15Da 535194 铖 16AH cw Scale Tower Berry Iridium «16ma 铖 16C toilet) § YY VYY 2 铖 16DS 2