KR960012302A - Soi형 반도체장치 및 그 제조방법 - Google Patents

Soi형 반도체장치 및 그 제조방법 Download PDF

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KR960012302A
KR960012302A KR1019950028637A KR19950028637A KR960012302A KR 960012302 A KR960012302 A KR 960012302A KR 1019950028637 A KR1019950028637 A KR 1019950028637A KR 19950028637 A KR19950028637 A KR 19950028637A KR 960012302 A KR960012302 A KR 960012302A
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thin film
single crystal
crystal silicon
semiconductor device
type semiconductor
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아끼라 요시노
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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Publication of KR960012302A publication Critical patent/KR960012302A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78639—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors

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  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
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  • Recrystallisation Techniques (AREA)

Abstract

단결정 실리콘 기판과, 기판 위에 형성된 절연물 박막과, 절연물 박막 위에 형성된다결정 실리콘 박막과, 게이트 절연 피막을 삽입하여 단결정 실리콘 박막 위에 형성된 게이트전극을 구비하며, 반도체 장치는 소오스, 드레인, 채널영역을 포함하는 단결정 실리콘 박막에 의해 박막 트랜지스터를 형성하고, 게이트전극은 제어전극으로서 제공되는 SOI형 반도체장치에 있어서, 절연물 박막은 게이트전극 아래에 애퍼처를 가지며 단결정 실리콘 기판은 애퍼처로 뻗어 있는 돌출부를 가지고 있는 것을 특징으로 하는 SOI형 반도체장치가 명시되어 있다. 또한 SOI형 반도체장치의 제조방법이 명시되어 있다.

Description

SOI형 반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 제1실시예에 SOI형 반도체장치를 나타내는 단면도,
제3도는 본 발명에 의한 제2실시예에 SOI형 반도체장치를 나타내는 단면도,
제4도는 본 발명에 의한 제3실시에에 SOI형 반도체장치를 나타내는 단면도.

Claims (7)

  1. 단결정 실리콘 기판과, 상기 기판 위에 형성된 절연물 박막과, 상기 절연물 박막 위에 형성된 단결정 실리콘 박막과, 게이트 절연 피막을 삽입하고 상기 단결정 실리콘 박막 위에 형성된 게이트전극을 구비하며, 상기 반도체장치가 소오스, 드레인, 채널영역을 포함하는 상기 단결정 실리콘 박막에 의해 박막 트랜지스터를 형성하고, 상기 게이트전극이 제어전극으로서 제공되는 SOI형 반도체장치에 있어서, 상기 절연물 박막은 상기 게이트전극 아래에 애퍼처를 가지며, 상기 단결정 실리콘 기판은 상기 애퍼처로 뻗어 있는 돌출부를 가지는 것을 특징으로 하는 SOI형 반도체장치.
  2. 제1항에 있어서, 상기 단결정 실리콘 기판의 돌출부가 상기 게이트전극의 치수와 거의 같거나 상기 게이트전극의 치수보다 게이트 길이방향으로 약간 긴 것을 특징으로 하는 SOI형 반도체장치.
  3. 제1항에 있어서, 상기 단결정 실리콘 기판의 상기 돌출부에 상기 채널영역의 불순물의 농도보다 높은 불순물의 농도가 주입되는 것을 특징으로 하는 SOI형 반도체장치.
  4. 제1항에 있어서, 상기 단결정 실리콘 박막의 상기 소오스와 드레인영역 위에 형성된 실리콘 박막을 추가로 포함하는 것을 특징으로 하는 SOI형 반도체장치.
  5. a) 돌출부를 혀성하기 위하여 단결정 실리콘 기판의 표면을 선택적으로 에칭하는 단게와, b) 전체의 표면 위에 절연 피막을 피복하고 상기 돌출부 사이에 충전된 절연물 박막을 형성하기 위하여 상기 절연 피막의 불필요한 부분을 제거하는 단계와, c) 상기 돌출부와 상기 절연물 박막 위에 단결정 실리콘 박막을 형성하기 위해 에피텍셜 성장의 근원으로서 상기 돌출부의 단결정 표면을 제공하면서 실리콘을 에피텍셜 성장하는 단계와, d) 상기 게이트전극이 제어전극으로서 제공되는 박막 트랜지스터를 형성하기 위하여 게이트 절연 피막을 삽입하고 상기 돌출부위의 상기 단결정 실리콘 박막위에 게이트전극을 형성하는 단계를 포함하는 것을 특징으로 하는 SOI형 반도체장치의 제조방법.
  6. 제5항에 있어서, 상기 a) 또는 b) 단계 전에 상기 실리콘 기판의 표면에 불순물을 도핑하는 단계를 추가로 포함하며, 상기 돌출부가 고농도 불순물영역을 형성하는 것을 특징으로 하는 SOI형 반도체장치의 제조방법.
  7. 제5항에 있어서, 상기 c) 단계 후와 d)단계 전에 상기 단결정 실리콘 박막 아래인 상기 돌출부에 불순물을 주입하는 단계를 추가로 포함하며, 상기 돌출부의 불순물농도가 상기 단결정 박막의 채널영여의 불순물 농도보다 높은 것을 특징으로 하는 SOI형 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950028637A 1994-09-01 1995-09-01 Soi형 반도체장치 및 그 제조방법 KR960012302A (ko)

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JP94-232284 1994-09-01
JP6232284A JP2891325B2 (ja) 1994-09-01 1994-09-01 Ｓｏｉ型半導体装置およびその製造方法

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US5913135A (en) * 1996-12-19 1999-06-15 Texas Instruments Incorporated Method for forming planar field effect transistors with source and drain on oxide and device constructed therefrom
JPH1174522A (ja) * 1996-12-19 1999-03-16 Texas Instr Inc <Ti> 絶縁体上にソースとドレインと共にプレーナー型ｆｅｔを形成する方法および装置
DE19757609A1 (de) * 1997-12-23 1999-07-01 Siemens Ag Soi-mosfet
US20070075372A1 (en) * 2003-10-20 2007-04-05 Nec Corporation Semiconductor device and manufacturing process therefor
JP2007266569A (ja) 2006-02-28 2007-10-11 Toshiba Corp 半導体記憶装置およびその製造方法
EP3087612A4 (en) * 2013-12-23 2017-07-26 Intel Corporation Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
US10032911B2 (en) 2013-12-23 2018-07-24 Intel Corporation Wide band gap transistor on non-native semiconductor substrate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54881A (en) * 1977-06-03 1979-01-06 Fujitsu Ltd Semiconductor device
JPS5710267A (en) * 1980-06-23 1982-01-19 Fujitsu Ltd Semiconductor device
JPS587868A (ja) * 1981-07-07 1983-01-17 Nec Corp 半導体装置の製造方法
JPS61139068A (ja) * 1984-12-11 1986-06-26 Toshiba Corp 半導体装置およびその製造方法
JPH0750687B2 (ja) * 1986-05-14 1995-05-31 ソニー株式会社 気相成長方法
JPH0344077A (ja) * 1989-07-11 1991-02-25 Seiko Instr Inc 半導体装置の製造方法
US5132755A (en) * 1989-07-11 1992-07-21 Oki Electric Industry Co. Ltd. Field effect transistor
CA2031254A1 (en) * 1989-12-01 1991-06-02 Kenji Aoki Doping method of barrier region in semiconductor device
DE69213539T2 (de) * 1991-04-26 1997-02-20 Canon Kk Halbleitervorrichtung mit verbessertem isoliertem Gate-Transistor
JP2729422B2 (ja) * 1991-10-22 1998-03-18 三菱電機株式会社 半導体装置
JPH06188263A (ja) * 1992-12-16 1994-07-08 Fujitsu Ltd 自己整合型薄膜トランジスタの製造方法

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