KR950014015A - 피처리물의 산화방법 - Google Patents
피처리물의 산화방법 Download PDFInfo
- Publication number
- KR950014015A KR950014015A KR1019940030972A KR19940030972A KR950014015A KR 950014015 A KR950014015 A KR 950014015A KR 1019940030972 A KR1019940030972 A KR 1019940030972A KR 19940030972 A KR19940030972 A KR 19940030972A KR 950014015 A KR950014015 A KR 950014015A
- Authority
- KR
- South Korea
- Prior art keywords
- ultraviolet light
- ozone
- workpiece
- dielectric barrier
- barrier discharge
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
Abstract
Description
Claims (11)
- 크세논가스를 봉입한 유전체 배리어 방전램프로 부터 방사되는 진공자외광을 산소를 함유한 유체에 조사시켜서 광화학반응에 의해 오존 및 활성산화성 분해물을 생성시키고, 이 오존 및 활성산화성 분해물을 피처리물에 접촉시켜서 산화시키는 것을 특징으로 하는 피처리물의 산화방법.
- 크세논가스를 봉입한 유전체 배리어 방전램프로 부터 방사되는 진공자외광을 산소를 함유한 유체에 조사시켜서 광화학반응에 의해 오존 및 활성산화성 분해물을 생성시키고, 이 오존 및 활성산화성 분해물을 피처리물에 접촉시켜서 산화시킴과 동시에, 상기 진공자외광을 상기 피처리물에도 조사시키고, 이들 협동작용에 의해 상기 피처리물을 산화시키는 것을 특징으로 하는 피처리물의 산화방법.
- 크세논가스를 봉입한 유전체 배리어 방전램프로 부터 방사되는 진공자외광을 산소를 함유한 유체에 조사시켜서 광화학반응에 의해 오존 및 활성산화성 분해물을 생성시키고, 이 오존 및 활성산화성 분배물에 원자외광을 조사시켜서 활성도를 높이고, 상기 활성도가 높아진 오존 및 활성산화성 분해물을 피처리물에 접촉시켜서 산화시키는 것을 특징으로 하는 피처리물의 산화방법.
- 크세논가스를 봉입한 유전체 배리어 방전램프로 부터 방사되는 진공자외광과, 원자외광 광원으로 부터 방사되는 원자외광을 산소를 함유한 유체에 동시에 조삿시키고, 광화학반응에 의해 오존 및 활성 산화성 분해물을 생성시키고, 이 오존 및 활성산화성 분해물을 피처리물에 접촉시켜서 산화시키는 것을 특징으로 하는 피처리물의 산화방법.
- 제3항 또는 제4항에 있어서, 피처리물을 산화시킬때 상기 피처리물이 진공자외광 혹은 원자외광의 적어도 한쪽의 조사를 받는 것을 특징으로 하는 피처리물의 산화방법.
- 제3항 내지 제5항의 어느 한항에 있어서, 원자외광 광원은 고압수은램프, 저압수은램프, 클립톤 불소 엑시머 램프 혹은 클립톤 불소 엑시머 레이저인 것을 특징으로 하는 피처리물의 산화방법.
- 제2항에 있어서, 유전체 배리어 방전램프와 피처리물 사이에 산소를 함유하는 유테를 존재시키고, 상기 램프로 부터 방사되는 진공 자외광의 상기 유체에 대한 투과최단거리 d(cm)으로 하고, 또 상기 유체의 산소분압을 p(기압)으로 했을때 dXp가 0.6보다 작게 규정된것을 특징으로 하는 피처리물의 산화방법.
- 제1항 내지 제7항의 어느 한항에 있어서, 피처리물을 산화시킬 때 피처리물의 표층 또는 상기 피처리물의 산화물이 기체로서 상기 피처리물로 부터 제거되도록 산화시키는 것을 특징으로 하는 피처리물의 산화방법.
- 제1항 내지 제8항의 어느 한항에 있어서, 유전체 배리어 방전램의 형상이 이중원통형 혹은 평면형인 것을 특징으로 하는 피처리물의 산화방법.
- 제9항에 있어서 유전체 배리어 방전램프이 진공자외광의 취출부는 합성석영유리, 사파이어, 알카리금속 할라이드 혹은 알카리토류금속 할라이드 중에서 선택된 1종의 재료로 이루어진 것을 특징으로 하는 피처리물의 산화방법.
- 크세논가스를 봉입한 유전체 배리어 방전램프로 부터 방사되는 진공자외광과, 원자외광 광원으로부터 방사되는 원자외광을 산소를 함유한 유체에 조사하여 광화학반응에 의해 오존 및 활성산화성 분해물을 생성시키고, 이 오존 및 활성산화성 분해물을 피처리물에 접촉시킴과 동시에 상기 양 자외광을 상기 피처리물에도 조사시키고, 이들의 협동작용에 의해 상기 피처리물을 산화시킬 때, 상기 피처리물 의 표면에 있어서의 원자외광 광원과의 사이에 광흡수가 없을때의 원자외광의 방사조도를 1(mW/cm2)로 하고, 유전체 배리어 방전 램프와 상기 피처리물 사이에 존재하는 산소를 함유한 유체에 대해 상기 램프로 부터 방사되는 진공자외광의 투과최단거리를 d(cm), 산소분압을 p(기압)라 했을때, (pXd)/(1+I1/2)의 값을 0.33보다 작게 규정하여 이루어진 것을 특징으로 하는 피처리물의 산화방법.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31923893 | 1993-11-26 | ||
JP93-319238 | 1993-11-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950014015A true KR950014015A (ko) | 1995-06-15 |
KR100189794B1 KR100189794B1 (ko) | 1999-06-01 |
Family
ID=18107959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940030972A KR100189794B1 (ko) | 1993-11-26 | 1994-11-23 | 피처리물의 산화방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5510158A (ko) |
EP (1) | EP0661110B1 (ko) |
KR (1) | KR100189794B1 (ko) |
DE (2) | DE69406103D1 (ko) |
TW (1) | TW260806B (ko) |
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KR20210124443A (ko) * | 2019-02-12 | 2021-10-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 시스템을 세정하기 위한 방법, 기판의 진공 프로세싱을 위한 방법, 및 기판을 진공 프로세싱하기 위한 장치 |
EP3768048B1 (en) * | 2019-07-19 | 2023-06-07 | Université Libre de Bruxelles | Dielectric barrier discharge plasma reactor and method for plasma-enhanced vapor deposition |
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JPS5975629A (ja) * | 1982-10-25 | 1984-04-28 | Seiko Epson Corp | 半導体装置の製造方法 |
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JPS6058238A (ja) * | 1983-09-09 | 1985-04-04 | Ushio Inc | 紫外線洗浄方法 |
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JPS62160981A (ja) * | 1986-01-08 | 1987-07-16 | Mitsubishi Heavy Ind Ltd | 石油タンカ−の改造法 |
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CH670171A5 (ko) * | 1986-07-22 | 1989-05-12 | Bbc Brown Boveri & Cie | |
JPS6352411A (ja) * | 1986-08-22 | 1988-03-05 | Hitachi Ltd | 処理方法および装置 |
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US5156884A (en) * | 1987-10-23 | 1992-10-20 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a film of oxidized metal |
JPH01319944A (ja) * | 1988-06-21 | 1989-12-26 | Mitsubishi Electric Corp | 半導体基板表面に薄膜を形成する方法およびその装置 |
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US5068040A (en) * | 1989-04-03 | 1991-11-26 | Hughes Aircraft Company | Dense phase gas photochemical process for substrate treatment |
DE3942472A1 (de) * | 1989-12-22 | 1991-06-27 | Asea Brown Boveri | Beschichtungsverfahren |
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US5178772A (en) * | 1991-11-15 | 1993-01-12 | Chemical Waste Management, Inc. | Process for destruction of metal complexes by ultraviolet irradiation |
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1994
- 1994-10-29 TW TW083110021A patent/TW260806B/zh not_active IP Right Cessation
- 1994-11-23 KR KR1019940030972A patent/KR100189794B1/ko not_active IP Right Cessation
- 1994-11-28 US US08/348,259 patent/US5510158A/en not_active Expired - Lifetime
- 1994-11-28 DE DE69406103A patent/DE69406103D1/de not_active Expired - Lifetime
- 1994-11-28 DE DE69406103T patent/DE69406103T4/de not_active Expired - Lifetime
- 1994-11-28 EP EP94118708A patent/EP0661110B1/en not_active Expired - Lifetime
Cited By (1)
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CN113492576A (zh) * | 2020-04-06 | 2021-10-12 | 正扬科技有限公司 | 紫外光固化装置 |
Also Published As
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US5510158A (en) | 1996-04-23 |
DE69406103T2 (de) | 1998-05-20 |
DE69406103D1 (de) | 1997-11-13 |
EP0661110A1 (en) | 1995-07-05 |
TW260806B (ko) | 1995-10-21 |
KR100189794B1 (ko) | 1999-06-01 |
DE69406103T4 (de) | 2000-07-27 |
EP0661110B1 (en) | 1997-10-08 |
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