KR950004449A - 반도체 실리콘 웨이퍼 및 그 제조방법 - Google Patents
반도체 실리콘 웨이퍼 및 그 제조방법 Download PDFInfo
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- KR950004449A KR950004449A KR1019940017349A KR19940017349A KR950004449A KR 950004449 A KR950004449 A KR 950004449A KR 1019940017349 A KR1019940017349 A KR 1019940017349A KR 19940017349 A KR19940017349 A KR 19940017349A KR 950004449 A KR950004449 A KR 950004449A
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- Prior art keywords
- silicon wafer
- semiconductor silicon
- deposition layer
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- wafer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims abstract 8
- 230000008021 deposition Effects 0.000 claims abstract 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 6
- 239000011261 inert gas Substances 0.000 claims abstract 3
- 235000014653 Carica parviflora Nutrition 0.000 claims 1
- 241000243321 Cnidaria Species 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 238000005247 gettering Methods 0.000 abstract 1
- 239000002244 precipitate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
- H01L29/66393—Lateral or planar thyristors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/061—Gettering-armorphous layers
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- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
내부 게터링 효과를 향상시킬 수 있을 뿐만 아니라, 표면을 무결함으로 할 수 있는 반도체 실리콘 웨이퍼의 제조방법을 제공하는 것으로, 실리콘 인코트(10)를 만든 후, 이 실리콘 인코트(10)를 절단해 실리콘 웨이퍼(11)를 만든다. 다음으로, 실리콘 웨이퍼(11)의 한쪽면에 다결정 실리콘 퇴적층(12)을 만들고, 불활성가스나 환원성 가스 또는 이들의 혼합가스 중에서 열처리 해 실리콘 웨이퍼(11)의 다른쪽 면의 근방에서 산소를 방출한다. 이외에, 열처리 해 실리콘 웨이퍼(11)로부터 산소를 방출한 후에 실리콘 웨이퍼(11)의 한쪽면에 다결정 실리콘 퇴적층(12)을 만들어도 좋다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 의한 반도체 실리콘 웨이퍼의 제조방법을 도시한 흐름도, 제2도는 본 발명의 제1실시예에 의해 얻어진 반도체 실리콘 웨이퍼의 산소 농도를 도시한 도면, 제3도는 H2분위기에서 만들어진 반도체 실리콘 웨이퍼의 CMOS 열처리 후의 산소 석출물 밀도를 도시한 도면, 제4도는 Ar 분위기에서 만들어진 반도체 실리콘 웨이퍼의 CMOS 열처리 후의 산소 석축물 밀도를 도시한 도면.
Claims (4)
- 반도체 실리콘 웨이퍼의 한쪽면에 다결정 실리콘 퇴적층을 만드는 공정과, 그후 상기 반도체 실리콘 웨이퍼를 불활성 가스나 환원성 가스 또는 이들의 혼합 가스 중에서 열처리 하는 공정을 구비한 것을 특징으로 하는 반도체 실리콘 웨이퍼의 제조방법.
- 반도체 실리콘 웨이퍼를 불활성 가스나 환원성 가스 또는 이들의 혼합 가스 중에서 열처리하는 공정과, 그후 반도체 실리콘 웨이퍼의 한쪽면에 다결정 실리콘 퇴적층을 만드는 공정을 구비한 것을 특징으로 하는 반도체 실리콘 웨이퍼의 제조방법.
- 반도체 실리콘 웨이퍼의 한쪽면에 두께 약 1㎚∼3㎚의 산화막을 형성하는 공정과, 이 산화막 형성후에 상기 반도체 실리콘 웨이퍼의 한쪽면에 다결정 실리콘 퇴적층을 만드는 공정과, 상기 반도체 실리콘 웨이퍼를 불활성 가스나 환원성 가스 또는 이들의 혼합가스 중에서 열처리 하는 공정을 구비한 것을 특징으로 하는 반도체 실리콘 웨이퍼의 제조방법.
- 반도체 실리콘 웨이퍼(11,15,21)의 한쪽면에 형성된 두께 약1㎚∼3㎚의 산화막(26)과, 상기 산호막의 표면에 형성된 다결정 실리콘 퇴적층(25)을 구비한 것을 특징으로 하는 반도체 실리콘 웨이퍼.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18160293 | 1993-07-22 | ||
JP93-181602 | 1993-07-22 | ||
JP94-128959 | 1994-06-10 | ||
JP6128959A JPH0786289A (ja) | 1993-07-22 | 1994-06-10 | 半導体シリコンウェハおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950004449A true KR950004449A (ko) | 1995-02-18 |
KR100232914B1 KR100232914B1 (ko) | 1999-12-01 |
Family
ID=26464517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940017349A KR100232914B1 (ko) | 1993-07-22 | 1994-07-19 | 반도체 실리콘 웨이퍼 및 그 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5534294A (ko) |
EP (1) | EP0635879B1 (ko) |
JP (1) | JPH0786289A (ko) |
KR (1) | KR100232914B1 (ko) |
DE (1) | DE69431385T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040029231A (ko) * | 2002-09-25 | 2004-04-06 | 엘지.필립스 엘시디 주식회사 | 형광램프 및 이를 이용한 백라이트 유닛 |
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CN101905877B (zh) * | 2009-06-02 | 2013-01-09 | 清华大学 | 碳纳米管膜的制备方法 |
KR101381537B1 (ko) * | 2009-06-03 | 2014-04-04 | 글로벌웨어퍼스 재팬 가부시키가이샤 | 실리콘 웨이퍼 및 실리콘 웨이퍼의 열처리 방법 |
CN101993055B (zh) * | 2009-08-14 | 2013-02-13 | 清华大学 | 碳纳米管膜先驱、碳纳米管膜及其制备方法 |
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DE112015002599T5 (de) * | 2014-06-02 | 2017-04-06 | Sumco Corporation | Silicium-Wafer und Verfahren zu dessen Herstellung |
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-
1994
- 1994-06-10 JP JP6128959A patent/JPH0786289A/ja active Pending
- 1994-07-19 KR KR1019940017349A patent/KR100232914B1/ko not_active IP Right Cessation
- 1994-07-20 EP EP94111305A patent/EP0635879B1/en not_active Expired - Lifetime
- 1994-07-20 DE DE69431385T patent/DE69431385T2/de not_active Expired - Fee Related
- 1994-07-22 US US08/279,007 patent/US5534294A/en not_active Expired - Lifetime
-
1995
- 1995-12-29 US US08/580,926 patent/US5738942A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040029231A (ko) * | 2002-09-25 | 2004-04-06 | 엘지.필립스 엘시디 주식회사 | 형광램프 및 이를 이용한 백라이트 유닛 |
Also Published As
Publication number | Publication date |
---|---|
DE69431385T2 (de) | 2003-05-15 |
US5738942A (en) | 1998-04-14 |
EP0635879A3 (en) | 1996-10-23 |
US5534294A (en) | 1996-07-09 |
EP0635879A2 (en) | 1995-01-25 |
DE69431385D1 (de) | 2002-10-24 |
KR100232914B1 (ko) | 1999-12-01 |
JPH0786289A (ja) | 1995-03-31 |
EP0635879B1 (en) | 2002-09-18 |
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