KR960026374A - 실리콘 기판 산화 방법 - Google Patents

실리콘 기판 산화 방법 Download PDF

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Publication number
KR960026374A
KR960026374A KR1019940035435A KR19940035435A KR960026374A KR 960026374 A KR960026374 A KR 960026374A KR 1019940035435 A KR1019940035435 A KR 1019940035435A KR 19940035435 A KR19940035435 A KR 19940035435A KR 960026374 A KR960026374 A KR 960026374A
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KR
South Korea
Prior art keywords
silicon substrate
oxide film
wet oxidation
oxidizing
silicon oxide
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Application number
KR1019940035435A
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English (en)
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KR100310461B1 (ko
Inventor
엄금용
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940035435A priority Critical patent/KR100310461B1/ko
Publication of KR960026374A publication Critical patent/KR960026374A/ko
Application granted granted Critical
Publication of KR100310461B1 publication Critical patent/KR100310461B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 실리콘 기판 산화 방법에 있어서; 습식산화 단계 이전에 수소 분위기에서 열처리하여 노출된 실리콘 기판 표면에 잔존하는 산소 원자를 제거하는 단계, H2, O2및 DCE(Dichloroethglene)분위기 가스에서 습식 산화를 실시하여 실리콘산화막을 형성하는 단계를 포함하는 것을 특징으로 하는 실리콘 기판 산화 방법에 관한 것으로, 내부 결함을 제거함으로써 안정되고 균일한 프로파일을 갖는 실리콘 산화막을 형성하여 소자의 특성을 향상시키는 효과를 가져온다.

Description

실리콘 기판 산화 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. 실리콘 기판 산화 방법에 있어서; 습식산화 단계 이전에 수소 분위기에서 열처리하여 노출된 실리콘 기판 표면에 잔존하는 산소 원자를 제거하는 단계, H2, O2및 DCE(Dichloroethglene)분위기 가스에서 습식산화를 실시하여 실리콘산화막을 형성하는 단계를 포함하는 것을 특징으로 하는 실리콘 기판 산화 방법.
  2. 제1항에 있어서, 상기 습식산화시의 분위기가스인 H2와 O2가스의 비율은 8:10으로하여 70Å의 두께를 갖는 게이트산화막용 실리콘산화막을 형성하는 것을 특징으로 하는 실리콘 기판 산화 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940035435A 1994-12-20 1994-12-20 실리콘산화막의형성방법 KR100310461B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940035435A KR100310461B1 (ko) 1994-12-20 1994-12-20 실리콘산화막의형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940035435A KR100310461B1 (ko) 1994-12-20 1994-12-20 실리콘산화막의형성방법

Publications (2)

Publication Number Publication Date
KR960026374A true KR960026374A (ko) 1996-07-22
KR100310461B1 KR100310461B1 (ko) 2001-12-15

Family

ID=37530928

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940035435A KR100310461B1 (ko) 1994-12-20 1994-12-20 실리콘산화막의형성방법

Country Status (1)

Country Link
KR (1) KR100310461B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476396B1 (ko) * 1997-12-27 2005-07-07 주식회사 하이닉스반도체 반도체장치의실리콘산화막형성방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672007B2 (ja) * 2005-03-08 2011-04-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
KR101503733B1 (ko) 2014-01-20 2015-03-19 연세대학교 산학협력단 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물의 입체 구조 형성 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476396B1 (ko) * 1997-12-27 2005-07-07 주식회사 하이닉스반도체 반도체장치의실리콘산화막형성방법

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Publication number Publication date
KR100310461B1 (ko) 2001-12-15

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