KR940006208A - 열처리 방법 - Google Patents

열처리 방법 Download PDF

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KR940006208A
KR940006208A KR1019930011793A KR930011793A KR940006208A KR 940006208 A KR940006208 A KR 940006208A KR 1019930011793 A KR1019930011793 A KR 1019930011793A KR 930011793 A KR930011793 A KR 930011793A KR 940006208 A KR940006208 A KR 940006208A
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heat treatment
container
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데쓰 오사와
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이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
이노우에 다케시
도오교오 에레구토론 도오호쿠 가부시끼가이샤
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
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    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

프로세스튜브 내에 반도체 웨이퍼가 탑재된 웨이퍼 보트를 삽입하고, 프로세스튜브 내에 처리가스를 도입하는 열처리를 할 때에, 이 열처리에 앞서서 프로세스튜브 내를 열처리 때보다도 높은 온도로 유지하면서 열처리 때의 압력보다도 낮은 압력으로 되도록 프로세스튜브 내를 배기한다. 열처리 종료후, 프로세스튜브 내를 N2가스로 가스퍼지한다.

Description

열처리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 방법이 적용되는 열처리장치의 1예를 나타내는 단면도,
제2도는 본 발명의 1형태에 관계되는 열처리 방법을 채용한 경우에 있어서의 각 공정의 프로세스튜브 내의 온도 및 압력과 시간과의 관계를 나타내는 도면,
제3도는 온도를 일정하게 한 경우에 있어서의 각 공정의 프로세스 튜브 내의 온도 및 압력과 시간과의 관계를 나타내는 도면,
제4도는 본 발명의 다른 형태에 관계되는 열처리 방법을 채용한 경우에 있어서의 각 공정의 프로세스 튜브 내의 온도 및 압력과 시간과의 관계를 나타내는 도면.

Claims (15)

  1. 프로세스용기 내에 피처리체를 삽입하는 공정과 상기 프로세스용기 내에 처리가스를 도입하여 열처리를 하는 공정과; 상기 열처리 공정에 앞서서 프로세스용기 내를 상기 열처리 때보다 높은 온도로 유지하면서 상기 열처리 공정 때의 압력보다도 낮은 압력으로 되도록 프로세스용기 내를 배기하는 공정을 구비하는 열처리 방법.
  2. 제1항에 있어서, 상기 열터리는 감압분위기에서 실시하는 열처리 방법.
  3. 제2항에 있어서, 상기 열처리는 CVD처리, 산화처리, 확산처리중 어느 하나인 열처리 방법.
  4. 제1항에 있어서, 상기 열처리 공정에 앞서서, 프로세스용기 내를 열처리 온도보다도 50∼300℃ 높게 설정하는 열처리 방법.
  5. 제4항에 있어서, 상기 열처리공정에 앞서서, 프로세스용기 내를 열처리 압력보다도 10분의 1이하의 낮은 압력으로 되도록 프로세스용기 내를 배기하는 열처리 방법
  6. 제5항에 있어서, 상기 열처리공정에 앞서서, 프로세스용기내를 700℃로 설정하고, 10-6Torr까지 배기하고 그후 프로세스용기 내를 600℃, 0.1Torr로 설정하여 열처리 하는 열처리 방법.
  7. 제1항에 있어서, 열처리후, 프로세스용기 내를 가스퍼지하는 공정을 가지고 있는 열처리 방법
  8. 제1항에 있어서, 상기 피처리체는 반도체 웨이퍼를 포함하는 열처리 방법.
  9. 프로세스용기 내에 피처리체를 삽입하는 공정과; 상기 프로세스용기 내에 처리가스를 도입하여 열처리를 하는 공정과, 상기 열처리공정에 앞서서 프로세스용기 내를 상기 열처리 때보다 높은 온도로 유지하면서 상기 열처리공정 때의 압력보다 낮은 압력으로 되도록 프로세스용기 내를 배기하는 공정과: 상기 열처리 공정후에 프로세스용기 내를 배기하는 공정과, 그후 프로세스용기 내를 가스퍼지하는 공정을 구비하는 열처리 방법.
  10. 제9항에 있어서, 상기 열처리 감압분위기에서 실시되는 열처리 방법.
  11. 제10항에 있어서, 상기 열처리 CVD처리, 산화처리, 확산처리중 어느 하나인 열처리 방법.
  12. 제9항에 있어서, 상기 열처리공정에 앞서서, 프로세스용기 내를 열처리 온도보다도 50∼300℃ 높게 설정하는 열처리 방법.
  13. 제12항에 있어서, 상기 열처리공정에 앞서서 프로세스용기 내를 열처리의 압력보다도 10분의 1이하의 낮은 압력으로 되도록 프로세스용기 내를 배기하는 열처리 방법.
  14. 제13항에 있어서, 상기 열처리공정에 앞서서 프로세스용기 내를 700℃로 설정하고 10-6Torr까지 배기하고 그후 프로세스용기 내를 600℃, 0.1Torr로 설정하여 옅처리하는 열처리 방법.
  15. 제9항에 있어서, 상기 피처리체는 반도체 웨이퍼를 포함하는 열처리 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930011793A 1992-06-26 1993-06-26 열처리 방법 KR100248566B1 (ko)

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JP04168870A JP3121122B2 (ja) 1992-06-26 1992-06-26 熱処理方法
JP92-168870 1992-06-26

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KR940006208A true KR940006208A (ko) 1994-03-23
KR100248566B1 KR100248566B1 (ko) 2000-03-15

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US5581523A (en) * 1992-11-17 1996-12-03 Seiko Epson Corporation Laser emission unit, optical head and optical memory device
JPH07225079A (ja) * 1994-02-10 1995-08-22 Sony Corp 加熱方法及び半導体装置の製造方法
US6030902A (en) * 1996-02-16 2000-02-29 Micron Technology Inc Apparatus and method for improving uniformity in batch processing of semiconductor wafers
US6198074B1 (en) * 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
US6372520B1 (en) 1998-07-10 2002-04-16 Lsi Logic Corporation Sonic assisted strengthening of gate oxides
US20020102859A1 (en) * 2001-01-31 2002-08-01 Yoo Woo Sik Method for ultra thin film formation
US7235440B2 (en) * 2003-07-31 2007-06-26 Tokyo Electron Limited Formation of ultra-thin oxide layers by self-limiting interfacial oxidation
WO2005013348A2 (en) * 2003-07-31 2005-02-10 Tokyo Electron Limited Formation of ultra-thin oxide and oxynitride layers by self-limiting interfacial oxidation
US7202186B2 (en) 2003-07-31 2007-04-10 Tokyo Electron Limited Method of forming uniform ultra-thin oxynitride layers
JP2009272367A (ja) * 2008-05-01 2009-11-19 Hitachi Kokusai Electric Inc 基板処理装置

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US4190470A (en) * 1978-11-06 1980-02-26 M/A Com, Inc. Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations
US4438157A (en) * 1980-12-05 1984-03-20 Ncr Corporation Process for forming MNOS dual dielectric structure
US4698104A (en) * 1984-12-06 1987-10-06 Xerox Corporation Controlled isotropic doping of semiconductor materials
JP3023982B2 (ja) * 1990-11-30 2000-03-21 東京エレクトロン株式会社 成膜方法
JPH04215439A (ja) * 1990-12-14 1992-08-06 Nikko Kyodo Co Ltd ＧａＡｓ単結晶基板の製造方法

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US5296412A (en) 1994-03-22
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