KR940016541A - 텅스텐 폴리사이드 게이트(tungsten polycide gate)에서 수소 분위기(in low pressure tube)에서의 열처리(annealing)를 통한 불소(fluorine) 제거 방법 - Google Patents
텅스텐 폴리사이드 게이트(tungsten polycide gate)에서 수소 분위기(in low pressure tube)에서의 열처리(annealing)를 통한 불소(fluorine) 제거 방법 Download PDFInfo
- Publication number
- KR940016541A KR940016541A KR1019920026942A KR920026942A KR940016541A KR 940016541 A KR940016541 A KR 940016541A KR 1019920026942 A KR1019920026942 A KR 1019920026942A KR 920026942 A KR920026942 A KR 920026942A KR 940016541 A KR940016541 A KR 940016541A
- Authority
- KR
- South Korea
- Prior art keywords
- fluorine
- hydrogen
- hydrogen atmosphere
- low pressure
- gate
- Prior art date
Links
- 229910052731 fluorine Inorganic materials 0.000 title claims abstract description 11
- 239000011737 fluorine Substances 0.000 title claims abstract description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract 3
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract 3
- 239000010937 tungsten Substances 0.000 title claims abstract 3
- 238000000137 annealing Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract 7
- 239000001257 hydrogen Substances 0.000 claims abstract 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract 7
- -1 fluorine ions Chemical class 0.000 claims abstract 5
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims abstract 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000006722 reduction reaction Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 불소 이온의 공유결합 특성을 이용하기 위하여 수소 분위기에서 텅스텐 폴리사이드를 열처리함으로써 WSix 필름에서 불소를 제거하는 방법에 관한 것으로 반도체 기판(4) 상부에 게이트 산화막(1), 폴리 실리콘(2), 텅스텐 실리콘(3)을 순차적으로 형성하는 제 1 단계, 상기 제 1 단계 후에 폴리사이드 게이트를 수소 분위기에서 열처리하여 WSix 필름내의 대부분의 불소 이온이 외부 확산하여 수소와 결합하여 불화 수소 가스로 제거되고 극소수의 불소 이온만이 게이트 산화막에 침투하는 제 2 단계를 포함하여 이루어지는 것을 특징으로 한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2 도는 본 발명에 따르 불소 제거 공정도.
Claims (3)
- 텅스텐 폴리사이드 게이트에서 수소 분위기에서의 열처리를 통한 불소 제거 방법에 있어서, 반도체 기판(4) 상부에 게이트 산화막(1), 폴리실리콘(2), 텅스텐 실리콘(3)을 순차적으로 형성하는 제 1 단계, 상기 제 1 단계 후에 폴리사이드 게이트를 수소 분위기에서 열처리하여 WSix 필름내의 대부분의 불소 이온이 외부 확산하여 수소와 결합하여 불화 수소 가스로 제거되고 극소수의 불소 이온만이 게이트 산화막에 침투하는 제 2 단계를 포함하여 이루어지는 것을 특징으로 하는 불소 제거 방법.
- 제 1 항에 있어서, 상기 수소 분위기에서의 열처리 시스템으로 진공 상태에 가까운 저압 튜브(low pressure tube)를 사용하는 것을 특징으로 하는 불소 제거 방법.
- 제 1 항에 있어서, WSix 필름의 증착 수단이 WF6에 대한 SiH4의 환원 반응인 것을 특징으로 하는 불소 제거 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920026942A KR100321743B1 (ko) | 1992-12-30 | 1992-12-30 | 반도체장치의게이트전도막패턴형성방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920026942A KR100321743B1 (ko) | 1992-12-30 | 1992-12-30 | 반도체장치의게이트전도막패턴형성방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940016541A true KR940016541A (ko) | 1994-07-23 |
| KR100321743B1 KR100321743B1 (ko) | 2002-05-13 |
Family
ID=37460610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920026942A KR100321743B1 (ko) | 1992-12-30 | 1992-12-30 | 반도체장치의게이트전도막패턴형성방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100321743B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000024908A (ko) * | 1998-10-02 | 2000-05-06 | 김영환 | 반도체 장치의 게이트 전극 형성 방법 |
-
1992
- 1992-12-30 KR KR1019920026942A patent/KR100321743B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000024908A (ko) * | 1998-10-02 | 2000-05-06 | 김영환 | 반도체 장치의 게이트 전극 형성 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100321743B1 (ko) | 2002-05-13 |
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