KR950008732A - 실리콘막의 성막방법 - Google Patents

실리콘막의 성막방법 Download PDF

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Publication number
KR950008732A
KR950008732A KR1019940023395A KR19940023395A KR950008732A KR 950008732 A KR950008732 A KR 950008732A KR 1019940023395 A KR1019940023395 A KR 1019940023395A KR 19940023395 A KR19940023395 A KR 19940023395A KR 950008732 A KR950008732 A KR 950008732A
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KR
South Korea
Prior art keywords
gas
silicon film
reaction vessel
forming
sccm
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KR1019940023395A
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English (en)
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KR100248563B1 (ko
Inventor
가즈히데 하세베
도시하루 니시무라
Original Assignee
이노우에 아키라
도오교오 에러구토론 가부시끼가이샤
마쓰바 구니유키
도오교오 에레구토론 도오호쿠 가부시끼가이샤
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Publication of KR950008732A publication Critical patent/KR950008732A/ko
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Publication of KR100248563B1 publication Critical patent/KR100248563B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

다수의 반도체 웨이퍼를 간격을 두고 수직방향으로 겹친상태에서 웨이퍼보트에 유지하고, 이 웨이퍼 보트를 종형 열처리장치의 프로세스 챔버내에 반입하고, 프로세스 챔버 내를 감압 분위기로 유지한 상태에서 300~530℃로 가열하고, 프로세스 챔버 내에 디실란 가스의 유량이 300SCCM이상이 되도록 디실란가스를 포함하는 처리가스를 공급하여 실리콘막의 성막을 한다.

Description

실리콘막의 성막방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 방법을 실시하기 위하여 사용되는 성막장치의 1예를 나타내는 단면도,
제3도는 본 발명의 피처리체 유지구로서 웨이퍼보트를 나타내는 사시도.

Claims (7)

  1. 다수의 피처리체를 간격을 두고 수직방향으로 겹친상태로 유지구를 유지하는 공정과; 피처리체를 유지한 유지구를 반응용기내에 반입하는 공정과; 반응용기내를 감압분위기로 유지하는 공정과; 반응용기내를 300∼530℃로 가열하는 공정과; 반응용기내에 디실란가스의 유량이 300 SCCM이상이 되도록 디실란가스를 포함한 처리가스를 공급하는 공정을 구비함으로써 피처리체 표면에 실리콘막을 형성하는 실리콘막의 성막방법.
  2. 제1항에 있어서, 상기 처리가스는 도우프용 가스를 포함하는 실리콘막의 성막방법.
  3. 제2항에 있어서, 상기 도우프용 가스는 포스핀 가스를 포함함으로써 P가 도우프되는 실리콘막의 성막방법.
  4. 제1항에 있어서, 상기 피처리체는 반도체 웨이퍼인 실리콘막의 성막방법.
  5. 제1항에 있어서, 상기 디실란가스의 유량은 500∼1500 SCCM인 실리콘막의 성막방법.
  6. 제1항에 있어서, 상기 가열온도는 425∼500℃인 실리콘막의 성막방법.
  7. 제1항에 있어서, 상기 감압분위기는 0.1∼10.0 Torr인 실리콘막의 성막방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940023395A 1993-09-16 1994-09-15 실리콘막의 성막방법 KR100248563B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5255050A JPH0786173A (ja) 1993-09-16 1993-09-16 成膜方法
JP93-255050 1993-09-16

Publications (2)

Publication Number Publication Date
KR950008732A true KR950008732A (ko) 1995-04-19
KR100248563B1 KR100248563B1 (ko) 2000-03-15

Family

ID=17273465

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940023395A KR100248563B1 (ko) 1993-09-16 1994-09-15 실리콘막의 성막방법

Country Status (4)

Country Link
US (1) US5677235A (ko)
JP (1) JPH0786173A (ko)
KR (1) KR100248563B1 (ko)
TW (1) TW294826B (ko)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100926994B1 (ko) * 2001-05-14 2009-11-17 셈코 엔지니어링 에스에이 실리콘 웨이퍼 처리 방법 및 장치
KR20210151717A (ko) * 2020-06-05 2021-12-14 엘지전자 주식회사 마스크 장치
US11707097B2 (en) 2020-06-05 2023-07-25 Lg Electronics Inc. Mask apparatus
US11931604B2 (en) 2020-06-30 2024-03-19 Lg Electronics Inc. Mask apparatus
US11951337B2 (en) 2020-06-30 2024-04-09 Lg Electronics Inc. Mask apparatus
US11998769B2 (en) 2020-06-05 2024-06-04 Lg Electronics Inc. Mask apparatus
US12005147B2 (en) 2020-08-28 2024-06-11 Lg Electronics Inc. Sterilization case

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7265036B2 (en) * 2004-07-23 2007-09-04 Applied Materials, Inc. Deposition of nano-crystal silicon using a single wafer chamber
US20080246101A1 (en) * 2007-04-05 2008-10-09 Applied Materials Inc. Method of poly-silicon grain structure formation
JP5311791B2 (ja) 2007-10-12 2013-10-09 東京エレクトロン株式会社 ポリシリコン膜の形成方法
JP5793398B2 (ja) 2011-10-28 2015-10-14 東京エレクトロン株式会社 シード層の形成方法及びシリコン含有薄膜の成膜方法
US9353442B2 (en) 2011-10-28 2016-05-31 Tokyo Electron Limited Apparatus for forming silicon-containing thin film

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JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
US4877753A (en) * 1986-12-04 1989-10-31 Texas Instruments Incorporated In situ doped polysilicon using tertiary butyl phosphine
JP2654996B2 (ja) * 1988-08-17 1997-09-17 東京エレクトロン株式会社 縦型熱処理装置
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon
JP3193402B2 (ja) * 1990-08-31 2001-07-30 株式会社日立製作所 半導体装置の製造方法
JP3023982B2 (ja) * 1990-11-30 2000-03-21 東京エレクトロン株式会社 成膜方法
JP2819073B2 (ja) * 1991-04-25 1998-10-30 東京エレクトロン株式会社 ドープド薄膜の成膜方法
US5256566A (en) * 1991-05-08 1993-10-26 Texas Instruments Incorporated Method for in-situ doping of deposited silicon
JPH04349615A (ja) * 1991-05-28 1992-12-04 Tonen Corp 多結晶シリコン薄膜の形成方法
JPH05182919A (ja) * 1992-01-07 1993-07-23 Fujitsu Ltd 多結晶シリコン薄膜の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100926994B1 (ko) * 2001-05-14 2009-11-17 셈코 엔지니어링 에스에이 실리콘 웨이퍼 처리 방법 및 장치
KR20210151717A (ko) * 2020-06-05 2021-12-14 엘지전자 주식회사 마스크 장치
US11707097B2 (en) 2020-06-05 2023-07-25 Lg Electronics Inc. Mask apparatus
US11998769B2 (en) 2020-06-05 2024-06-04 Lg Electronics Inc. Mask apparatus
US11931604B2 (en) 2020-06-30 2024-03-19 Lg Electronics Inc. Mask apparatus
US11951337B2 (en) 2020-06-30 2024-04-09 Lg Electronics Inc. Mask apparatus
US12005147B2 (en) 2020-08-28 2024-06-11 Lg Electronics Inc. Sterilization case

Also Published As

Publication number Publication date
KR100248563B1 (ko) 2000-03-15
JPH0786173A (ja) 1995-03-31
US5677235A (en) 1997-10-14
TW294826B (ko) 1997-01-01

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