KR960002526A - 성막방법 - Google Patents
성막방법 Download PDFInfo
- Publication number
- KR960002526A KR960002526A KR1019950016167A KR19950016167A KR960002526A KR 960002526 A KR960002526 A KR 960002526A KR 1019950016167 A KR1019950016167 A KR 1019950016167A KR 19950016167 A KR19950016167 A KR 19950016167A KR 960002526 A KR960002526 A KR 960002526A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- resistance value
- film
- polysilicon film
- refiner
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 6
- 230000015572 biosynthetic process Effects 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000013078 crystal Substances 0.000 claims abstract 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract 4
- 239000010703 silicon Substances 0.000 claims abstract 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000006243 chemical reaction Methods 0.000 claims abstract 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
Abstract
웨이퍼의 다수는 웨이퍼보트상의 반응관 내에 적재되고; 모노실란 가스, 포스핀 가스 및 N2O가스는 인을 도핑한 아몰파스 실리콘막을 형성하고; 다음에 웨이퍼를 예컨대, 폴리크리스탈화 아몰파스 실리콘막으로 다른 반응관 내에 어닐한다. N2O의 분해에 의해 생성된 OS(산소)는 막 내로 주입된다. OS는 실리콘 결정의 핵으로 되고, 결정이 미소화되어 크기가 균일하게 된다. 결과적으로 폴리실리콘막 미세화장치의 저항치의 높은 균일성을 얻을 수 있게 된다. 폴리실리콘막의 저항치는 산소의 첨가에 의해 쉽게 제어될 수 있다. 결과적으로 폴리실리콘막 미세화장치의 저항치의 높은 균일성을 얻을 수 있게 된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 성막방법을 실시하기 위해 이용되는 성막장치의 일예를 나타낸 단면도.
Claims (4)
- 밀폐가 유지되는 반응로에서 처리되는 물체를 적재하는 단계와, 화학적 기체반응에 의해 처리되는 물체상에 실리콘막을 형성하기 위해 반응로에 가스를 형성 및 가스를 도핑하는 막을 공급하는 단계 및, 계속해서 막형성처리를 통해 반응로로의 실리콘 결정의 증가를 방지하기 위한 구성요소를 갖는 가스를 공급하는 단계를 갖춘 것을 특징으로 하는 성막방법.
- 제1항에 있어서, 실리콘 결정의 증가를 방지하기 위한 구성요소를 갖는 가스로는 N2O, O2, O3및 CO2중 하나가 선택되는 것을 특징으로 하는 성막방법.
- 제1항에 있어서, 막형성가스는 모노실란(SiH4)가스인 것을 특징으로 하는 성막방법.
- 제1항에 있어서, 도핑가스는 포스핀(PH3) 또는 B2H2인 것을 특징으로 하는 성막방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP94-159532 | 1994-06-17 | ||
JP15953294A JP3432601B2 (ja) | 1994-06-17 | 1994-06-17 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960002526A true KR960002526A (ko) | 1996-01-26 |
KR100413914B1 KR100413914B1 (ko) | 2004-03-30 |
Family
ID=15695832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950016167A KR100413914B1 (ko) | 1994-06-17 | 1995-06-17 | 성막방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5783257A (ko) |
JP (1) | JP3432601B2 (ko) |
KR (1) | KR100413914B1 (ko) |
TW (1) | TW271504B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101012103B1 (ko) * | 2008-05-02 | 2011-02-07 | 주식회사 유진테크 | 극미세 결정립 폴리 실리콘 박막 증착 방법 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11260734A (ja) | 1998-03-12 | 1999-09-24 | Nec Corp | 半導体装置の製造方法 |
JPH11288893A (ja) * | 1998-04-03 | 1999-10-19 | Nec Corp | 半導体製造装置及び半導体装置の製造方法 |
JP2000114250A (ja) * | 1998-08-21 | 2000-04-21 | Texas Instr Inc <Ti> | 枚葉式反応器を使用した、インサイチュ・ド―ピングされたきめの粗い多結晶シリコンの製法 |
US6615615B2 (en) | 2001-06-29 | 2003-09-09 | Lightwave Microsystems Corporation | GePSG core for a planar lightwave circuit |
JP5311791B2 (ja) * | 2007-10-12 | 2013-10-09 | 東京エレクトロン株式会社 | ポリシリコン膜の形成方法 |
KR101012102B1 (ko) * | 2008-05-02 | 2011-02-07 | 주식회사 유진테크 | 극미세 결정립 폴리 실리콘 박막 증착 방법 |
US8304033B2 (en) * | 2009-02-04 | 2012-11-06 | Tel Epion Inc. | Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles |
WO2014002353A1 (ja) * | 2012-06-27 | 2014-01-03 | パナソニック株式会社 | 固体撮像素子及びその製造方法 |
JP7190875B2 (ja) * | 2018-11-16 | 2022-12-16 | 東京エレクトロン株式会社 | ポリシリコン膜の形成方法及び成膜装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
JPS6035746A (ja) * | 1984-06-13 | 1985-02-23 | Matsushita Electric Ind Co Ltd | 電子写真感光体 |
JPH01268047A (ja) * | 1988-04-19 | 1989-10-25 | Nec Corp | ポリシリコン抵抗の形成方法 |
KR920006197B1 (ko) * | 1988-11-26 | 1992-08-01 | 삼성전자 주식회사 | 비정질 실리콘 태양전지 |
JPH0376022A (ja) * | 1989-08-18 | 1991-04-02 | Konica Corp | 磁気記録媒体 |
US5080933A (en) * | 1990-09-04 | 1992-01-14 | Motorola, Inc. | Selective deposition of polycrystalline silicon |
JPH053258A (ja) * | 1990-09-25 | 1993-01-08 | Kawasaki Steel Corp | 層間絶縁膜の形成方法 |
JPH04151839A (ja) * | 1990-10-16 | 1992-05-25 | Kawasaki Steel Corp | シリコンオキシナイトライド膜の製造方法 |
US5159205A (en) * | 1990-10-24 | 1992-10-27 | Burr-Brown Corporation | Timing generator circuit including adjustable tapped delay line within phase lock loop to control timing of signals in the tapped delay line |
JPH06140324A (ja) * | 1992-10-23 | 1994-05-20 | Casio Comput Co Ltd | 半導体薄膜の結晶化方法 |
-
1994
- 1994-06-17 JP JP15953294A patent/JP3432601B2/ja not_active Expired - Fee Related
-
1995
- 1995-06-16 TW TW084106198A patent/TW271504B/zh not_active IP Right Cessation
- 1995-06-17 KR KR1019950016167A patent/KR100413914B1/ko not_active IP Right Cessation
-
1997
- 1997-05-29 US US08/864,907 patent/US5783257A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101012103B1 (ko) * | 2008-05-02 | 2011-02-07 | 주식회사 유진테크 | 극미세 결정립 폴리 실리콘 박막 증착 방법 |
Also Published As
Publication number | Publication date |
---|---|
US5783257A (en) | 1998-07-21 |
JP3432601B2 (ja) | 2003-08-04 |
JPH088195A (ja) | 1996-01-12 |
KR100413914B1 (ko) | 2004-03-30 |
TW271504B (ko) | 1996-03-01 |
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