KR930000881B1 - 세라믹 다층 회로판 및 반도체 모듈 - Google Patents

세라믹 다층 회로판 및 반도체 모듈 Download PDF

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Publication number
KR930000881B1
KR930000881B1 KR1019870005624A KR870005624A KR930000881B1 KR 930000881 B1 KR930000881 B1 KR 930000881B1 KR 1019870005624 A KR1019870005624 A KR 1019870005624A KR 870005624 A KR870005624 A KR 870005624A KR 930000881 B1 KR930000881 B1 KR 930000881B1
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KR
South Korea
Prior art keywords
ceramic
thermal expansion
expansion coefficient
layer
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019870005624A
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English (en)
Korean (ko)
Other versions
KR880001052A (ko
Inventor
노부유끼 우시후사
히로이찌 시노하라
고우세이 나가야마
사또루 오기하라
다사오 소가
Original Assignee
가부시기가이샤 히다찌 세이사꾸쇼
미다 가쓰시게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of KR880001052A publication Critical patent/KR880001052A/ko
Application granted granted Critical
Publication of KR930000881B1 publication Critical patent/KR930000881B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49158—Manufacturing circuit on or in base with molding of insulated base
    • Y10T29/4916—Simultaneous circuit manufacturing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Compositions Of Oxide Ceramics (AREA)
KR1019870005624A 1986-06-06 1987-06-03 세라믹 다층 회로판 및 반도체 모듈 Expired - Fee Related KR930000881B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP86-130136 1986-06-06
JP61130136A JPS62287658A (ja) 1986-06-06 1986-06-06 セラミックス多層回路板
JP130136 1986-06-16

Publications (2)

Publication Number Publication Date
KR880001052A KR880001052A (ko) 1988-03-31
KR930000881B1 true KR930000881B1 (ko) 1993-02-08

Family

ID=15026818

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870005624A Expired - Fee Related KR930000881B1 (ko) 1986-06-06 1987-06-03 세라믹 다층 회로판 및 반도체 모듈

Country Status (4)

Country Link
US (2) US4821142A (https=)
JP (1) JPS62287658A (https=)
KR (1) KR930000881B1 (https=)
CN (1) CN1005241B (https=)

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JPH01248593A (ja) * 1988-03-30 1989-10-04 Ngk Insulators Ltd セラミック多層配線基板
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JPH0268992A (ja) * 1988-09-02 1990-03-08 Nec Corp 多層配線基板
EP0441180B1 (en) * 1989-01-09 1999-07-07 Mitsubishi Denki Kabushiki Kaisha Integrated circuits containing microwave circuits
US5136271A (en) * 1989-01-09 1992-08-04 Mitsubishi Denki Kabushiki Kaisha Microwave integrated circuit mountings
US5080958A (en) * 1989-08-01 1992-01-14 E. I. Du Pont De Nemours And Company Multilayer interconnects
US5077451A (en) * 1990-01-17 1991-12-31 Aptix Corporation Custom tooled printed circuit board
US5055973A (en) * 1990-01-17 1991-10-08 Aptix Corporation Custom tooled printed circuit board
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JP2906282B2 (ja) * 1990-09-20 1999-06-14 富士通株式会社 ガラスセラミック・グリーンシートと多層基板、及び、その製造方法
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US6423571B2 (en) 1994-09-20 2002-07-23 Hitachi, Ltd. Method of making a semiconductor device having a stress relieving mechanism
US5962815A (en) * 1995-01-18 1999-10-05 Prolinx Labs Corporation Antifuse interconnect between two conducting layers of a printed circuit board
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JP3330468B2 (ja) * 1995-06-30 2002-09-30 富士通株式会社 配線基板及び半導体装置
US5906042A (en) * 1995-10-04 1999-05-25 Prolinx Labs Corporation Method and structure to interconnect traces of two conductive layers in a printed circuit board
US5767575A (en) * 1995-10-17 1998-06-16 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
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CN102869207B (zh) * 2012-09-24 2014-08-13 胜宏科技（惠州）股份有限公司 一种多层led混合材料线路板的层压方法
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Also Published As

Publication number Publication date
KR880001052A (ko) 1988-03-31
JPH0543316B2 (https=) 1993-07-01
USRE34887E (en) 1995-03-28
US4821142A (en) 1989-04-11
CN1005241B (zh) 1989-09-20
JPS62287658A (ja) 1987-12-14
CN87104031A (zh) 1987-12-16

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