JPS59151443A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59151443A
JPS59151443A JP58025858A JP2585883A JPS59151443A JP S59151443 A JPS59151443 A JP S59151443A JP 58025858 A JP58025858 A JP 58025858A JP 2585883 A JP2585883 A JP 2585883A JP S59151443 A JPS59151443 A JP S59151443A
Authority
JP
Japan
Prior art keywords
package
conductor
solder
conductor pins
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58025858A
Other languages
English (en)
Inventor
Masahiro Sugimoto
杉本 正浩
Tetsushi Wakabayashi
哲史 若林
Kiyoshi Muratake
村竹 清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58025858A priority Critical patent/JPS59151443A/ja
Priority to EP84300895A priority patent/EP0117111B1/en
Priority to DE8484300895T priority patent/DE3484540D1/de
Publication of JPS59151443A publication Critical patent/JPS59151443A/ja
Priority to US07/006,347 priority patent/US4724472A/en
Pending legal-status Critical Current

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    • HELECTRICITY
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 (a)  発明の技術分野 本発明は半導体装置、特に高密度実装が可能な半導体装
置の構造に関する。
(bl  従来技術と問題点 近年、ICやLSIなどの半導体集積回路を収容する容
器としてリードレスパッケージが用いられている。この
パッケージは通常の外部リードを有する型のパッケージ
と同じく内部にICチップを収納してワイヤーボンデン
グされている。そのため、汎用化された組立法を採るこ
とができ、且つ外部リードの代わり□に接続用の導体パ
ッドが設けられてコンパクトな構造となっており、別名
をチップ′キャリヤと呼ばれている。
従うて、このようなパッケージは回路基板(プリント基
板)上で他のパッケージより一層高密度実装することが
できJ≠のために重宝がられて各方面で利用が活発化し
ている構造である。
第1図はこのパッケージ1を回路基板2に装着した一実
施例の構造−面図を示乙て゛おり、11は ・ICCチ
ンブ、12は導体パッド、13はキャップ。
14は放熱板で、本例は発□熱量の大きいICの構造を
示したものである。また、第2図は第1図に示すパッケ
ージ1の回路基板2側がら見た平面図を示しており、図
示の□ように多数の導体パッド12が設けられていて、
パッド数は例えばLSIでは200〜300個にも及ぶ
゛多数個となる。このようなリードレスパンケージは、
第1図に示すように回路基板2に設ばられた接続用電極
21とパッケージ1の導体パン″F′12とが半田3(
半田の厚みは約50μm)で接合され、回路基板に装着
される。
ところで、第1図のように装着すると、回路の動作中に
熱シラツクが加わった場合に、半田接合部分で欠損が生
じることがある。欠損とは半田3にクラックが入つそ外
れたり、ある%Nは回路基板2から接続用電極21が剥
離したりすることで、かような欠損は、回路基板2に形
成された電子回路の動作を不能にする致命傷になること
は言うまでもない、この欠損の主因は回路基板2がエポ
キシやポリイミドなどの有機樹□脂製であって熱膨張率
が大きく、一方のパッケージ、1はセラミック製で熱膨
張率が小さいため、半田接合部分にストレス(歪)が加
わって破壊されるものである。
この場合、回路基板2をパッケージ1と同じ材質のセラ
ミック基板にすれば、ストレスがなくなって破壊されな
いが、セラミック基板は誘電率が高い為に電子回路の動
作を遅延させる悪影響があって好ましくなく、特殊な場
合を除いてはセラミック基板は殆ど用いられない。
(cl  発明の目的 本発明は上記の問題点を解消させるための半導体装置を
提案するものである。
(cll  発明の構成 その目的は、半導体素子を収容するパッケージの外面に
形成され鼻複数の導体パッド□と、該導体パッドに鑞づ
けされ、且つ被接続外部導体に当接して接続されるよう
にした導体ピンまたは導体ボールを具備してなる半導体
装置によって達成することができる。
ie+  発明の実施例゛ 以下9図面を参照して実施例によって詳細に説明する。
第3図は本発明にかかる一実施例の断面図で、図示のよ
うにパッケージ1のすべての導体パッド12に導体ピン
4を鑞づけしておく。かくして、第4図に示すように回
路基板2の接続用電極21と導体ピン4とを半田づけす
る。そうすれば、回路基板2上の電子回路を動作させた
り中止したりして、加熱と冷却とが繰り返され熱シラ1
ンクが加わっても、導体パッドと電極との接続部分で欠
損を生じることはなくなる。
第5図はその接続部分の拡大図を示している。
パッケージ1の導体パッド12はセラミック基板を積層
し焼結する際にメタライズ層として形成されるが、この
メタライズii←導体ピン4を銀鑞5で鑞づけしておき
、表面をニッケルと金で鍍金したものとする。そして、
導体パッド1zの広さを0.2〜0.25目角とすれば
、これに長さ0.5〜1.5鶴、直径0.1〜0.2f
i程度の導体ピンを鑞づけし、導体ヂンと回路基板2の
電極21とは半田6で接合する。一方、電極21は銅層
に半田鍍金されたものである。また、導体ピンはコバー
ル9.タングステン、モリブデンまたは銅合金などのバ
ネ材で作成される。このような構造にすれば、ストレス
はこのビンで吸収されるから熱ストレスによる破壊は防
止される。
、次に、第6図は本発明にかかる他の実施例の断面図で
、パッケージ1のすべての導体、パッド12に導体ボー
ル7が鑞づけしてあり、導体ボール7の直径は0.21
程度、その材質は銅、銀、金またはそれらの合金で、柔
らかい材料牽用いる。パッケージ1と回路基板2との接
続図は図示していないが、第7図に接続部分の拡大図を
示している。
パッケージ1の導体パッド12に導体ボール7を鑞づけ
し、導体ピンと回路基板2の電極21とは半田6で接合
する。このような構造にすれば、ストレスは上記例と同
様にこの導体ボールで吸収することができる。
上記の実施例は発熱量の大きいICの例であるが、ロジ
ック回路用など一般のICは第8図に示すようなパッケ
ージ裏面全体に導体パッド12が設けられており、これ
に図示のように導体ピン4を鑞づけした構造、あるいは
導体ボール7を鑞づけした構造にすれば同様にストレス
を除去して破壊を防止することができる。
(f)  発明の効果□ 以上の説明から明らかなように、本発明によればパッケ
ージ外面に形成された導体パッドに導体ピンあるいは導
体ボールを取りつけて熱シロツクの緩衝帯とするために
、熱ショックにより半田接合部が欠損することなく、電
子回路の信頼性が向上するものである。
【図面の簡単な説明】
第1図は従来のパッケージを回路基板に装着した構造断
面図例、第2図はそのパッケージの平面図、第3図、第
6図および第8図は本発明にかかるパッケージの断面図
、第4図は本発明のパッケージを回路基板に装着した構
造断面図、第5図および第7図は接続部分の拡大図であ
る。 図中、lはパッケージ、2は回路基板、3.6は半田、
4は導体ビン、5は銀鑞、7は導体ボール、12は導体
パッド、21は接i用の電極を示している。 第8図 手続補正書輸発) 昭和   年   月    11 59.3.28 庁長官殿 、の表示 夕と年特許願第2タ?タ?シ2 2、発明の名称半導体装置 する者 tとの関係     特許出馳人 住所 神奈川県用崎市中原区1−/1・111中101
5番地(522)名称富士通株式会社 浬  人     住所 神奈川県用崎市中原区1−小
I川す015洛地本願の特許請求の範囲を次のとおり補
正する。 「半導体素子を収容するパッケージの外面に形成された
複数の導体パッドと、該導体パッドに立設さ体ピンを具
備してなることを特徴とする半導体装置。」2− 185−

Claims (1)

    【特許請求の範囲】
  1. 半導体素子を収容するパッケージの外面に形成された複
    数の導体バッドと、該導体バッドに鑞づけされ、且つ被
    接続外部導体に当接して接続されるようにした導体ビン
    または導体ボールを具備してなることを特徴とする半導
    体装置。
JP58025858A 1983-02-17 1983-02-17 半導体装置 Pending JPS59151443A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58025858A JPS59151443A (ja) 1983-02-17 1983-02-17 半導体装置
EP84300895A EP0117111B1 (en) 1983-02-17 1984-02-13 Semiconductor device assembly
DE8484300895T DE3484540D1 (de) 1983-02-17 1984-02-13 Halbleiteranordnungszusammenbau.
US07/006,347 US4724472A (en) 1983-02-17 1987-01-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58025858A JPS59151443A (ja) 1983-02-17 1983-02-17 半導体装置

Publications (1)

Publication Number Publication Date
JPS59151443A true JPS59151443A (ja) 1984-08-29

Family

ID=12177513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58025858A Pending JPS59151443A (ja) 1983-02-17 1983-02-17 半導体装置

Country Status (4)

Country Link
US (1) US4724472A (ja)
EP (1) EP0117111B1 (ja)
JP (1) JPS59151443A (ja)
DE (1) DE3484540D1 (ja)

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JPH0363943U (ja) * 1989-10-26 1991-06-21
KR100416838B1 (ko) * 2001-06-29 2004-02-05 주식회사 하이닉스반도체 반도체의 패키지장치 및 그 방법

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JP2509285B2 (ja) * 1988-03-18 1996-06-19 富士通株式会社 半導体装置の試験方法
JPH0756887B2 (ja) * 1988-04-04 1995-06-14 株式会社日立製作所 半導体パッケージ及びそれを用いたコンピュータ
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JPH0363943U (ja) * 1989-10-26 1991-06-21
KR100416838B1 (ko) * 2001-06-29 2004-02-05 주식회사 하이닉스반도체 반도체의 패키지장치 및 그 방법

Also Published As

Publication number Publication date
EP0117111A2 (en) 1984-08-29
EP0117111B1 (en) 1991-05-08
US4724472A (en) 1988-02-09
DE3484540D1 (de) 1991-06-13
EP0117111A3 (en) 1986-03-26

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