KR920008931A - Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법 - Google Patents

Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법

Info

Publication number
KR920008931A
KR920008931A KR1019900016121A KR900016121A KR920008931A KR 920008931 A KR920008931 A KR 920008931A KR 1019900016121 A KR1019900016121 A KR 1019900016121A KR 900016121 A KR900016121 A KR 900016121A KR 920008931 A KR920008931 A KR 920008931A
Authority
KR
South Korea
Prior art keywords
manufacturing
memory cell
random access
access memory
dynamic random
Prior art date
Application number
KR1019900016121A
Other languages
English (en)
Other versions
KR930005738B1 (ko
Inventor
강영태
강래구
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019900016121A priority Critical patent/KR930005738B1/ko
Priority to GB9101316A priority patent/GB2248720B/en
Priority to FR919101188A priority patent/FR2667984B1/fr
Priority to ITMI910245A priority patent/IT1244544B/it
Priority to DE4103596A priority patent/DE4103596C2/de
Priority to JP3260430A priority patent/JPH0770622B2/ja
Publication of KR920008931A publication Critical patent/KR920008931A/ko
Application granted granted Critical
Publication of KR930005738B1 publication Critical patent/KR930005738B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
KR1019900016121A 1990-10-11 1990-10-11 Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법 KR930005738B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019900016121A KR930005738B1 (ko) 1990-10-11 1990-10-11 Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법
GB9101316A GB2248720B (en) 1990-10-11 1991-01-21 Dram cell
FR919101188A FR2667984B1 (fr) 1990-10-11 1991-02-01 Cellule de memoire dynamique a acces direct et procede pour fabriquer une telle cellule.
ITMI910245A IT1244544B (it) 1990-10-11 1991-02-01 Cella di memoria ad accesso dinamico a condensatori del tipo a solchi impilati miscelati
DE4103596A DE4103596C2 (de) 1990-10-11 1991-02-04 DRAM-Zellen-Anordnung und Verfahren zu ihrer Herstellung
JP3260430A JPH0770622B2 (ja) 1990-10-11 1991-09-12 Ｍｉｓｔ型ダイナミックランダムアクセスメモリセル及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016121A KR930005738B1 (ko) 1990-10-11 1990-10-11 Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법

Publications (2)

Publication Number Publication Date
KR920008931A true KR920008931A (ko) 1992-05-28
KR930005738B1 KR930005738B1 (ko) 1993-06-24

Family

ID=19304521

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016121A KR930005738B1 (ko) 1990-10-11 1990-10-11 Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법

Country Status (6)

Country Link
JP (1) JPH0770622B2 (ko)
KR (1) KR930005738B1 (ko)
DE (1) DE4103596C2 (ko)
FR (1) FR2667984B1 (ko)
GB (1) GB2248720B (ko)
IT (1) IT1244544B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990048904A (ko) * 1997-12-11 1999-07-05 윤종용 반도체 장치의 커패시터 제조방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283726A (ja) * 1996-02-16 1997-10-31 Nippon Steel Corp 半導体記憶装置及びその製造方法
DE102005020079A1 (de) * 2005-04-29 2006-06-01 Infineon Technologies Ag Hybride Speicherzelle für DRAM

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPH0815207B2 (ja) * 1986-02-04 1996-02-14 富士通株式会社 半導体記憶装置
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPS63239969A (ja) * 1987-03-27 1988-10-05 Sony Corp メモリ装置
JP2621181B2 (ja) * 1987-06-12 1997-06-18 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPH02106958A (ja) * 1988-10-17 1990-04-19 Hitachi Ltd 半導体装置
JPH02116160A (ja) * 1988-10-26 1990-04-27 Matsushita Electron Corp 半導体装置およびその製造方法
KR950000500B1 (ko) * 1989-08-31 1995-01-24 금성일렉트론 주식회사 디램셀 커패시터 제조방법 및 구조

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990048904A (ko) * 1997-12-11 1999-07-05 윤종용 반도체 장치의 커패시터 제조방법

Also Published As

Publication number Publication date
ITMI910245A1 (it) 1992-08-01
FR2667984B1 (fr) 1993-01-08
IT1244544B (it) 1994-07-15
GB2248720B (en) 1995-04-19
ITMI910245A0 (it) 1991-02-01
JPH06342887A (ja) 1994-12-13
KR930005738B1 (ko) 1993-06-24
GB2248720A (en) 1992-04-15
DE4103596C2 (de) 1994-02-24
JPH0770622B2 (ja) 1995-07-31
GB9101316D0 (en) 1991-03-06
DE4103596A1 (de) 1992-04-16
FR2667984A1 (fr) 1992-04-17

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