NL1000847A1 - Progammeerbaar dynamisch willekeurig-toegankelijk geheugen (DRAM). - Google Patents

Progammeerbaar dynamisch willekeurig-toegankelijk geheugen (DRAM).

Info

Publication number
NL1000847A1
NL1000847A1 NL1000847A NL1000847A NL1000847A1 NL 1000847 A1 NL1000847 A1 NL 1000847A1 NL 1000847 A NL1000847 A NL 1000847A NL 1000847 A NL1000847 A NL 1000847A NL 1000847 A1 NL1000847 A1 NL 1000847A1
Authority
NL
Netherlands
Prior art keywords
dram
random access
access memory
dynamic random
programmable dynamic
Prior art date
Application number
NL1000847A
Other languages
English (en)
Other versions
NL1000847C2 (nl
Inventor
Scott Schaefer
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of NL1000847A1 publication Critical patent/NL1000847A1/nl
Application granted granted Critical
Publication of NL1000847C2 publication Critical patent/NL1000847C2/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G11C7/1021—Page serial bit line access mode, i.e. using an enabled row address stroke pulse with its associated word line address and a sequence of enabled column address stroke pulses each with its associated bit line address
    • G11C7/1024—Extended data output [EDO] mode, i.e. keeping output buffer enabled during an extended period of time
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
NL1000847A 1994-07-19 1995-07-19 Progammeerbaar dynamisch willekeurig-toegankelijk geheugen (DRAM). NL1000847C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/276,993 US5457659A (en) 1994-07-19 1994-07-19 Programmable dynamic random access memory (DRAM)
US27699394 1994-07-19

Publications (2)

Publication Number Publication Date
NL1000847A1 true NL1000847A1 (nl) 1996-01-19
NL1000847C2 NL1000847C2 (nl) 1997-05-21

Family

ID=23058991

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1000847A NL1000847C2 (nl) 1994-07-19 1995-07-19 Progammeerbaar dynamisch willekeurig-toegankelijk geheugen (DRAM).

Country Status (6)

Country Link
US (1) US5457659A (nl)
JP (1) JP3238608B2 (nl)
KR (1) KR100196977B1 (nl)
DE (1) DE19526411A1 (nl)
NL (1) NL1000847C2 (nl)
TW (1) TW344134B (nl)

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JPH07182864A (ja) * 1993-12-21 1995-07-21 Mitsubishi Electric Corp 半導体記憶装置
US5424672A (en) * 1994-02-24 1995-06-13 Micron Semiconductor, Inc. Low current redundancy fuse assembly
US5945840A (en) * 1994-02-24 1999-08-31 Micron Technology, Inc. Low current redundancy anti-fuse assembly
US5896551A (en) * 1994-04-15 1999-04-20 Micron Technology, Inc. Initializing and reprogramming circuitry for state independent memory array burst operations control
US6112284A (en) * 1994-12-30 2000-08-29 Intel Corporation Method and apparatus for latching data from a memory resource at a datapath unit
US5604880A (en) * 1994-08-11 1997-02-18 Intel Corporation Computer system with a memory identification scheme
US20030009616A1 (en) * 1994-11-30 2003-01-09 Brian K. Langendorf Method and apparatus for integrating and determining whether a memory subsystem is installed with standard page mode memory or an extended data out memory
US5675549A (en) * 1994-12-23 1997-10-07 Micron Technology, Inc. Burst EDO memory device address counter
US5729503A (en) * 1994-12-23 1998-03-17 Micron Technology, Inc. Address transition detection on a synchronous design
US5682354A (en) * 1995-11-06 1997-10-28 Micron Technology, Inc. CAS recognition in burst extended data out DRAM
US5640364A (en) * 1994-12-23 1997-06-17 Micron Technology, Inc. Self-enabling pulse trapping circuit
US6804760B2 (en) 1994-12-23 2004-10-12 Micron Technology, Inc. Method for determining a type of memory present in a system
US5610864A (en) * 1994-12-23 1997-03-11 Micron Technology, Inc. Burst EDO memory device with maximized write cycle timing
US5668773A (en) * 1994-12-23 1997-09-16 Micron Technology, Inc. Synchronous burst extended data out DRAM
US6725349B2 (en) * 1994-12-23 2004-04-20 Intel Corporation Method and apparatus for controlling of a memory subsystem installed with standard page mode memory and an extended data out memory
US6525971B2 (en) 1995-06-30 2003-02-25 Micron Technology, Inc. Distributed write data drivers for burst access memories
US5526320A (en) * 1994-12-23 1996-06-11 Micron Technology Inc. Burst EDO memory device
US5721859A (en) * 1994-12-23 1998-02-24 Micron Technology, Inc. Counter control circuit in a burst memory
US5717654A (en) * 1995-02-10 1998-02-10 Micron Technology, Inc. Burst EDO memory device with maximized write cycle timing
US5850368A (en) * 1995-06-01 1998-12-15 Micron Technology, Inc. Burst EDO memory address counter
US5546344A (en) * 1995-06-06 1996-08-13 Cirrus Logic, Inc. Extended data output DRAM interface
KR100372245B1 (ko) * 1995-08-24 2004-02-25 삼성전자주식회사 워드라인순차제어반도체메모리장치
KR0167687B1 (ko) * 1995-09-11 1999-02-01 김광호 고속액세스를 위한 데이타 출력패스를 구비하는 반도체 메모리장치
US5898856A (en) * 1995-09-15 1999-04-27 Intel Corporation Method and apparatus for automatically detecting a selected cache type
US5604714A (en) * 1995-11-30 1997-02-18 Micron Technology, Inc. DRAM having multiple column address strobe operation
US5729504A (en) * 1995-12-14 1998-03-17 Micron Technology, Inc. Continuous burst edo memory device
KR0167299B1 (ko) * 1995-12-21 1999-02-01 문정환 메모리의 컬럼스위치 인에이블신호 발생회로
US6567904B1 (en) * 1995-12-29 2003-05-20 Intel Corporation Method and apparatus for automatically detecting whether a memory unit location is unpopulated or populated with synchronous or asynchronous memory devices
US5966724A (en) * 1996-01-11 1999-10-12 Micron Technology, Inc. Synchronous memory device with dual page and burst mode operations
US7681005B1 (en) 1996-01-11 2010-03-16 Micron Technology, Inc. Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation
US5802550A (en) * 1996-01-17 1998-09-01 Apple Computer, Inc. Processor having an adaptable mode of interfacing with a peripheral storage device
US5749086A (en) * 1996-02-29 1998-05-05 Micron Technology, Inc. Simplified clocked DRAM with a fast command input
US5644549A (en) * 1996-03-21 1997-07-01 Act Corporation Apparatus for accessing an extended data output dynamic random access memory
US5668760A (en) * 1996-04-23 1997-09-16 Intel Corporation Nonvolatile memory with a write protection circuit
US6401186B1 (en) 1996-07-03 2002-06-04 Micron Technology, Inc. Continuous burst memory which anticipates a next requested start address
US6981126B1 (en) 1996-07-03 2005-12-27 Micron Technology, Inc. Continuous interleave burst access
US6034919A (en) * 1996-12-31 2000-03-07 Compaq Computer Corporation Method and apparatus for using extended-data output memory devices in a system designed for fast page mode memory devices
US7103742B1 (en) 1997-12-03 2006-09-05 Micron Technology, Inc. Burst/pipelined edo memory device
US6418547B1 (en) 1998-02-26 2002-07-09 Micron Technology, Inc. Internal guardband for semiconductor testing
KR100313495B1 (ko) * 1998-05-13 2001-12-12 김영환 반도체메모리장치의동작모드결정회로
US6414898B1 (en) * 2001-01-16 2002-07-02 Taiwan Semiconductor Manufacturing Company Method to reduce peak current for RAS cycle sensing in DRAM using non-multiplexed row and column addresses to avoid damage to battery
US7299203B1 (en) * 2001-04-19 2007-11-20 Xilinx, Inc. Method for storing and shipping programmable ASSP devices
US6967348B2 (en) * 2002-06-20 2005-11-22 Micron Technology, Inc. Signal sharing circuit with microelectric die isolation features
US7026646B2 (en) * 2002-06-20 2006-04-11 Micron Technology, Inc. Isolation circuit
US6819599B2 (en) 2002-08-01 2004-11-16 Micron Technology, Inc. Programmable DQS preamble
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS634492A (ja) * 1986-06-23 1988-01-09 Mitsubishi Electric Corp 半導体記憶装置
JPS6432489A (en) * 1987-07-27 1989-02-02 Matsushita Electronics Corp Memory device
JPH01205788A (ja) * 1988-02-12 1989-08-18 Toshiba Corp 半導体集積回路
JPH01248396A (ja) * 1988-03-29 1989-10-03 Nec Corp ダイナミック・ランダム・アクセス・メモリ
JP2617779B2 (ja) * 1988-08-31 1997-06-04 三菱電機株式会社 半導体メモリ装置
US5036495A (en) * 1989-12-28 1991-07-30 International Business Machines Corp. Multiple mode-set for IC chip
US5262998A (en) * 1991-08-14 1993-11-16 Micron Technology, Inc. Dynamic random access memory with operational sleep mode
US5303180A (en) * 1991-08-29 1994-04-12 Texas Instruments Incorporated Pin programmable dram that allows customer to program option desired
EP0541060A3 (en) * 1991-11-05 1994-05-18 Fujitsu Ltd Dynamic random access memory having an improved operational stability
JPH05144258A (ja) * 1991-11-15 1993-06-11 Hitachi Ltd ダイナミツク型ｒａｍの特殊モード制御方法
US5325330A (en) * 1993-02-11 1994-06-28 Micron Semiconductor, Inc. Memory circuit with foreshortened data output signal
US5349566A (en) * 1993-05-19 1994-09-20 Micron Semiconductor, Inc. Memory device with pulse circuit for timing data output, and method for outputting data

Also Published As

Publication number Publication date
US5457659A (en) 1995-10-10
TW344134B (en) 1998-11-01
JPH08180674A (ja) 1996-07-12
JP3238608B2 (ja) 2001-12-17
KR100196977B1 (ko) 1999-06-15
DE19526411A1 (de) 1996-02-08
NL1000847C2 (nl) 1997-05-21
KR960006054A (ko) 1996-02-23

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 19970115

PD2B A search report has been drawn up
V1 Lapsed because of non-payment of the annual fee

Effective date: 20120201