GB9504936D0 - Memory cell for dynamic random access memory - Google Patents

Memory cell for dynamic random access memory

Info

Publication number
GB9504936D0
GB9504936D0 GBGB9504936.7A GB9504936A GB9504936D0 GB 9504936 D0 GB9504936 D0 GB 9504936D0 GB 9504936 A GB9504936 A GB 9504936A GB 9504936 D0 GB9504936 D0 GB 9504936D0
Authority
GB
United Kingdom
Prior art keywords
random access
dynamic random
memory
memory cell
access memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9504936.7A
Other versions
GB2287560A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9504936D0 publication Critical patent/GB9504936D0/en
Publication of GB2287560A publication Critical patent/GB2287560A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
GB9504936A 1994-03-11 1995-03-10 Memory cell for dynamic random access memory Withdrawn GB2287560A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940004734A KR960009959B1 (en) 1994-03-11 1994-03-11 Connecting method of dram cell

Publications (2)

Publication Number Publication Date
GB9504936D0 true GB9504936D0 (en) 1995-04-26
GB2287560A GB2287560A (en) 1995-09-20

Family

ID=19378671

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9504936A Withdrawn GB2287560A (en) 1994-03-11 1995-03-10 Memory cell for dynamic random access memory

Country Status (4)

Country Link
JP (1) JPH0855474A (en)
KR (1) KR960009959B1 (en)
DE (1) DE19508736A1 (en)
GB (1) GB2287560A (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4420822A (en) * 1982-03-19 1983-12-13 Signetics Corporation Field plate sensing in single transistor, single capacitor MOS random access memory
US4506351A (en) * 1982-06-23 1985-03-19 International Business Machines Corporation One-device random access memory having enhanced sense signal
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
JPS60239993A (en) * 1984-05-12 1985-11-28 Sharp Corp Dynamic semiconductor memory device
US4715015A (en) * 1984-06-01 1987-12-22 Sharp Kabushiki Kaisha Dynamic semiconductor memory with improved sense signal
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin

Also Published As

Publication number Publication date
GB2287560A (en) 1995-09-20
JPH0855474A (en) 1996-02-27
DE19508736A1 (en) 1995-10-12
KR960009959B1 (en) 1996-07-25

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)