GB2314951B - Dynamic random access memory - Google Patents

Dynamic random access memory

Info

Publication number
GB2314951B
GB2314951B GB9712287A GB9712287A GB2314951B GB 2314951 B GB2314951 B GB 2314951B GB 9712287 A GB9712287 A GB 9712287A GB 9712287 A GB9712287 A GB 9712287A GB 2314951 B GB2314951 B GB 2314951B
Authority
GB
United Kingdom
Prior art keywords
random access
access memory
dynamic random
dynamic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9712287A
Other versions
GB9712287D0 (en
GB2314951A (en
Inventor
Jae Jin Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9712287D0 publication Critical patent/GB9712287D0/en
Publication of GB2314951A publication Critical patent/GB2314951A/en
Application granted granted Critical
Publication of GB2314951B publication Critical patent/GB2314951B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
GB9712287A 1996-06-29 1997-06-12 Dynamic random access memory Expired - Fee Related GB2314951B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025743A KR100203142B1 (en) 1996-06-29 1996-06-29 Dram

Publications (3)

Publication Number Publication Date
GB9712287D0 GB9712287D0 (en) 1997-08-13
GB2314951A GB2314951A (en) 1998-01-14
GB2314951B true GB2314951B (en) 2000-10-25

Family

ID=19464740

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9712287A Expired - Fee Related GB2314951B (en) 1996-06-29 1997-06-12 Dynamic random access memory

Country Status (4)

Country Link
JP (1) JPH1064267A (en)
KR (1) KR100203142B1 (en)
GB (1) GB2314951B (en)
TW (1) TW326527B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100298443B1 (en) * 1998-08-18 2001-08-07 김영환 Sense amp control circuit
EP1619688A1 (en) 2004-07-21 2006-01-25 Dialog Semiconductor GmbH Dynamical biasing of memory sense amplifiers
JP2006054017A (en) 2004-08-13 2006-02-23 Micron Technology Inc Precharge by capacitor support of memory digit line

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943944A (en) * 1987-11-25 1990-07-24 Kabushiki Kaisha Toshiba Semiconductor memory using dynamic ram cells
EP0499478A2 (en) * 1991-02-14 1992-08-19 Sharp Kabushiki Kaisha Semiconductor memory unit array
EP0522361A2 (en) * 1991-07-12 1993-01-13 International Business Machines Corporation Power saving sensing circuits for dynamic random access memory
GB2264376A (en) * 1992-02-19 1993-08-25 Samsung Electronics Co Ltd Bit line control in a semiconductor memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943944A (en) * 1987-11-25 1990-07-24 Kabushiki Kaisha Toshiba Semiconductor memory using dynamic ram cells
EP0499478A2 (en) * 1991-02-14 1992-08-19 Sharp Kabushiki Kaisha Semiconductor memory unit array
EP0522361A2 (en) * 1991-07-12 1993-01-13 International Business Machines Corporation Power saving sensing circuits for dynamic random access memory
GB2264376A (en) * 1992-02-19 1993-08-25 Samsung Electronics Co Ltd Bit line control in a semiconductor memory device

Also Published As

Publication number Publication date
JPH1064267A (en) 1998-03-06
KR100203142B1 (en) 1999-06-15
KR980004961A (en) 1998-03-30
GB9712287D0 (en) 1997-08-13
GB2314951A (en) 1998-01-14
TW326527B (en) 1998-02-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090612