IT1244544B - Cella di memoria ad accesso dinamico a condensatori del tipo a solchi impilati miscelati - Google Patents

Cella di memoria ad accesso dinamico a condensatori del tipo a solchi impilati miscelati

Info

Publication number
IT1244544B
IT1244544B ITMI910245A ITMI910245A IT1244544B IT 1244544 B IT1244544 B IT 1244544B IT MI910245 A ITMI910245 A IT MI910245A IT MI910245 A ITMI910245 A IT MI910245A IT 1244544 B IT1244544 B IT 1244544B
Authority
IT
Italy
Prior art keywords
memory cell
access memory
stacked
capacitor
slot type
Prior art date
Application number
ITMI910245A
Other languages
English (en)
Italian (it)
Inventor
Youngtae Kang
Laeku Kang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI910245A0 publication Critical patent/ITMI910245A0/it
Publication of ITMI910245A1 publication Critical patent/ITMI910245A1/it
Application granted granted Critical
Publication of IT1244544B publication Critical patent/IT1244544B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
ITMI910245A 1990-10-11 1991-02-01 Cella di memoria ad accesso dinamico a condensatori del tipo a solchi impilati miscelati IT1244544B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016121A KR930005738B1 (ko) 1990-10-11 1990-10-11 Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법

Publications (3)

Publication Number Publication Date
ITMI910245A0 ITMI910245A0 (it) 1991-02-01
ITMI910245A1 ITMI910245A1 (it) 1992-08-01
IT1244544B true IT1244544B (it) 1994-07-15

Family

ID=19304521

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI910245A IT1244544B (it) 1990-10-11 1991-02-01 Cella di memoria ad accesso dinamico a condensatori del tipo a solchi impilati miscelati

Country Status (6)

Country Link
JP (1) JPH0770622B2 (ko)
KR (1) KR930005738B1 (ko)
DE (1) DE4103596C2 (ko)
FR (1) FR2667984B1 (ko)
GB (1) GB2248720B (ko)
IT (1) IT1244544B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283726A (ja) * 1996-02-16 1997-10-31 Nippon Steel Corp 半導体記憶装置及びその製造方法
KR19990048904A (ko) * 1997-12-11 1999-07-05 윤종용 반도체 장치의 커패시터 제조방법
DE102005020079A1 (de) * 2005-04-29 2006-06-01 Infineon Technologies Ag Hybride Speicherzelle für DRAM

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPH0815207B2 (ja) * 1986-02-04 1996-02-14 富士通株式会社 半導体記憶装置
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPS63239969A (ja) * 1987-03-27 1988-10-05 Sony Corp メモリ装置
JP2621181B2 (ja) * 1987-06-12 1997-06-18 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPH02106958A (ja) * 1988-10-17 1990-04-19 Hitachi Ltd 半導体装置
JPH02116160A (ja) * 1988-10-26 1990-04-27 Matsushita Electron Corp 半導体装置およびその製造方法
KR950000500B1 (ko) * 1989-08-31 1995-01-24 금성일렉트론 주식회사 디램셀 커패시터 제조방법 및 구조

Also Published As

Publication number Publication date
FR2667984B1 (fr) 1993-01-08
KR920008931A (ko) 1992-05-28
JPH0770622B2 (ja) 1995-07-31
GB2248720A (en) 1992-04-15
GB9101316D0 (en) 1991-03-06
DE4103596C2 (de) 1994-02-24
FR2667984A1 (fr) 1992-04-17
ITMI910245A0 (it) 1991-02-01
ITMI910245A1 (it) 1992-08-01
JPH06342887A (ja) 1994-12-13
DE4103596A1 (de) 1992-04-16
GB2248720B (en) 1995-04-19
KR930005738B1 (ko) 1993-06-24

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970225