GB9101316D0 - Dram cell - Google Patents

Dram cell

Info

Publication number
GB9101316D0
GB9101316D0 GB919101316A GB9101316A GB9101316D0 GB 9101316 D0 GB9101316 D0 GB 9101316D0 GB 919101316 A GB919101316 A GB 919101316A GB 9101316 A GB9101316 A GB 9101316A GB 9101316 D0 GB9101316 D0 GB 9101316D0
Authority
GB
United Kingdom
Prior art keywords
dram cell
dram
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB919101316A
Other versions
GB2248720B (en
GB2248720A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9101316D0 publication Critical patent/GB9101316D0/en
Publication of GB2248720A publication Critical patent/GB2248720A/en
Application granted granted Critical
Publication of GB2248720B publication Critical patent/GB2248720B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
GB9101316A 1990-10-11 1991-01-21 Dram cell Expired - Lifetime GB2248720B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016121A KR930005738B1 (en) 1990-10-11 1990-10-11 Mist type dynamic random access memory cell and method for fabricating thereof

Publications (3)

Publication Number Publication Date
GB9101316D0 true GB9101316D0 (en) 1991-03-06
GB2248720A GB2248720A (en) 1992-04-15
GB2248720B GB2248720B (en) 1995-04-19

Family

ID=19304521

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9101316A Expired - Lifetime GB2248720B (en) 1990-10-11 1991-01-21 Dram cell

Country Status (6)

Country Link
JP (1) JPH0770622B2 (en)
KR (1) KR930005738B1 (en)
DE (1) DE4103596C2 (en)
FR (1) FR2667984B1 (en)
GB (1) GB2248720B (en)
IT (1) IT1244544B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283726A (en) * 1996-02-16 1997-10-31 Nippon Steel Corp Semiconductor storage device and its manufacture
KR19990048904A (en) * 1997-12-11 1999-07-05 윤종용 Capacitor Manufacturing Method of Semiconductor Device
DE102005020079A1 (en) * 2005-04-29 2006-06-01 Infineon Technologies Ag Hybrid memory cell for dynamic random access memory (DRAM), containing specified substrate with transistor structure(s) with drain, source, control contact and channel zone between drain and source, etc

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (en) * 1985-11-20 1987-06-01 Toshiba Corp Semiconductor memory
JPH0815207B2 (en) * 1986-02-04 1996-02-14 富士通株式会社 Semiconductor memory device
JPS63122261A (en) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPS63239969A (en) * 1987-03-27 1988-10-05 Sony Corp Memory device
JP2621181B2 (en) * 1987-06-12 1997-06-18 日本電気株式会社 MIS type semiconductor memory device
JPH02106958A (en) * 1988-10-17 1990-04-19 Hitachi Ltd Semiconductor device
JPH02116160A (en) * 1988-10-26 1990-04-27 Matsushita Electron Corp Semiconductor device and manufacture thereof
KR950000500B1 (en) * 1989-08-31 1995-01-24 금성일렉트론 주식회사 Manufacturing method and structure of dram cell capacitor

Also Published As

Publication number Publication date
ITMI910245A1 (en) 1992-08-01
FR2667984B1 (en) 1993-01-08
IT1244544B (en) 1994-07-15
GB2248720B (en) 1995-04-19
ITMI910245A0 (en) 1991-02-01
JPH06342887A (en) 1994-12-13
KR930005738B1 (en) 1993-06-24
GB2248720A (en) 1992-04-15
DE4103596C2 (en) 1994-02-24
KR920008931A (en) 1992-05-28
JPH0770622B2 (en) 1995-07-31
DE4103596A1 (en) 1992-04-16
FR2667984A1 (en) 1992-04-17

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20110120