GB9100673D0 - Dram cell - Google Patents

Dram cell

Info

Publication number
GB9100673D0
GB9100673D0 GB919100673A GB9100673A GB9100673D0 GB 9100673 D0 GB9100673 D0 GB 9100673D0 GB 919100673 A GB919100673 A GB 919100673A GB 9100673 A GB9100673 A GB 9100673A GB 9100673 D0 GB9100673 D0 GB 9100673D0
Authority
GB
United Kingdom
Prior art keywords
dram cell
dram
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB919100673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9100673D0 publication Critical patent/GB9100673D0/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • H01L28/82Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
    • H01L28/87Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
GB919100673A 1990-11-01 1991-01-11 Dram cell Pending GB9100673D0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900017705A KR920010908A (en) 1990-11-01 1990-11-01 DRAM cell having improved fin structure and manufacturing method thereof

Publications (1)

Publication Number Publication Date
GB9100673D0 true GB9100673D0 (en) 1991-02-27

Family

ID=19305569

Family Applications (1)

Application Number Title Priority Date Filing Date
GB919100673A Pending GB9100673D0 (en) 1990-11-01 1991-01-11 Dram cell

Country Status (5)

Country Link
JP (1) JPH079947B2 (en)
KR (1) KR920010908A (en)
DE (1) DE4101939A1 (en)
GB (1) GB9100673D0 (en)
IT (1) IT1245099B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19842684C1 (en) * 1998-09-17 1999-11-04 Siemens Ag Integrated circuit high-permittivity capacitor arranged on support structure in semiconductor arrangement e.g. for DRAM circuit or ADC

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0295709B1 (en) * 1987-06-17 1998-03-11 Fujitsu Limited Method of producing a dynamic random access memory device

Also Published As

Publication number Publication date
ITMI910132A1 (en) 1992-05-02
JPH0629479A (en) 1994-02-04
JPH079947B2 (en) 1995-02-01
IT1245099B (en) 1994-09-13
ITMI910132A0 (en) 1991-01-22
KR920010908A (en) 1992-06-27
DE4101939A1 (en) 1992-05-14

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