KR920008419B1 - 반도체 집적회로장치 및 마스터 슬라이스 방법을 이용한 반도체 집적회로장치의 제조방법 - Google Patents

반도체 집적회로장치 및 마스터 슬라이스 방법을 이용한 반도체 집적회로장치의 제조방법 Download PDF

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Publication number
KR920008419B1
KR920008419B1 KR1019890005315A KR890005315A KR920008419B1 KR 920008419 B1 KR920008419 B1 KR 920008419B1 KR 1019890005315 A KR1019890005315 A KR 1019890005315A KR 890005315 A KR890005315 A KR 890005315A KR 920008419 B1 KR920008419 B1 KR 920008419B1
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South Korea
Prior art keywords
wiring
region
holes
cell
impurity regions
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KR1019890005315A
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English (en)
Korean (ko)
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KR890016667A (ko
Inventor
요시오 히로세
고오이찌 야마시다
시게끼 가와하라
신지 사또오
다께시 사사끼
아따루 구마가이
Original Assignee
후지쓰 가부시끼가이샤
야마모도 다꾸마
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Publication date
Priority claimed from JP63100631A external-priority patent/JP2526269B2/ja
Priority claimed from JP63180953A external-priority patent/JPH0230163A/ja
Priority claimed from JP63180954A external-priority patent/JPH0230164A/ja
Application filed by 후지쓰 가부시끼가이샤, 야마모도 다꾸마 filed Critical 후지쓰 가부시끼가이샤
Publication of KR890016667A publication Critical patent/KR890016667A/ko
Application granted granted Critical
Publication of KR920008419B1 publication Critical patent/KR920008419B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019890005315A 1988-04-22 1989-04-22 반도체 집적회로장치 및 마스터 슬라이스 방법을 이용한 반도체 집적회로장치의 제조방법 Expired KR920008419B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP63100631A JP2526269B2 (ja) 1988-04-22 1988-04-22 マスタスライス方法
JP63-100631 1988-04-22
JP63180953A JPH0230163A (ja) 1988-07-20 1988-07-20 マスタスライス型半導体集積回路装置およびその製造方法
JP63-180953 1988-07-20
JP63180954A JPH0230164A (ja) 1988-07-20 1988-07-20 マスタスライス型半導体集積回路装置およびその製造方法
JP63-180954 1988-07-20

Publications (2)

Publication Number Publication Date
KR890016667A KR890016667A (ko) 1989-11-29
KR920008419B1 true KR920008419B1 (ko) 1992-09-28

Family

ID=27309268

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890005315A Expired KR920008419B1 (ko) 1988-04-22 1989-04-22 반도체 집적회로장치 및 마스터 슬라이스 방법을 이용한 반도체 집적회로장치의 제조방법

Country Status (4)

Country Link
US (1) US5506162A (enExample)
EP (2) EP0338817B1 (enExample)
KR (1) KR920008419B1 (enExample)
DE (1) DE68929068T2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252507A (en) * 1990-03-30 1993-10-12 Tactical Fabs, Inc. Very high density wafer scale device architecture
US5315130A (en) * 1990-03-30 1994-05-24 Tactical Fabs, Inc. Very high density wafer scale device architecture
US5691218A (en) * 1993-07-01 1997-11-25 Lsi Logic Corporation Method of fabricating a programmable polysilicon gate array base cell structure
US6242767B1 (en) 1997-11-10 2001-06-05 Lightspeed Semiconductor Corp. Asic routing architecture
KR100313280B1 (ko) 1999-10-25 2001-11-07 한신혁 반도체 장치의 전도배선 마스크 제조방법
US6613611B1 (en) 2000-12-22 2003-09-02 Lightspeed Semiconductor Corporation ASIC routing architecture with variable number of custom masks
US6885043B2 (en) * 2002-01-18 2005-04-26 Lightspeed Semiconductor Corporation ASIC routing architecture
JP2006156929A (ja) * 2004-04-19 2006-06-15 Fujitsu Ltd 半導体集積回路及びその設計方法
US8097918B2 (en) * 2009-08-14 2012-01-17 Infineon Technologies Ag Semiconductor arrangement including a load transistor and sense transistor

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3835530A (en) * 1967-06-05 1974-09-17 Texas Instruments Inc Method of making semiconductor devices
US3702025A (en) * 1969-05-12 1972-11-07 Honeywell Inc Discretionary interconnection process
US3861023A (en) * 1973-04-30 1975-01-21 Hughes Aircraft Co Fully repairable integrated circuit interconnections
JPS57133712A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Constituting method of delay circuit in master slice ic
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
EP0074805B2 (en) * 1981-09-10 1992-03-11 Fujitsu Limited Semiconductor integrated circuit comprising a semiconductor substrate and interconnecting layers
JPS5851537A (ja) * 1981-09-24 1983-03-26 Ricoh Co Ltd マスタスライスチツプ
JPS5851538A (ja) * 1981-09-24 1983-03-26 Hitachi Ltd 半導体集積回路装置
JPS58200570A (ja) * 1982-05-19 1983-11-22 Hitachi Ltd 半導体集積回路装置
GB2122809B (en) * 1982-06-01 1985-10-02 Standard Telephones Cables Ltd Integrated circuit interconnection bus structure
DE3238311A1 (de) * 1982-10-15 1984-04-19 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung in gate-array-technik
US4568961A (en) * 1983-03-11 1986-02-04 Rca Corporation Variable geometry automated universal array
JPS59204254A (ja) * 1983-05-06 1984-11-19 Sumitomo Electric Ind Ltd 多層配線マスタスライスｉｃの製造方法
JPS59220940A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 電子ビ−ムによる半導体装置の内部動作電圧波形の測定方法
US4617193A (en) * 1983-06-16 1986-10-14 Digital Equipment Corporation Planar interconnect for integrated circuits
JPS6022337A (ja) * 1983-07-19 1985-02-04 Toshiba Corp 半導体集積回路
JPS6065547A (ja) * 1983-09-20 1985-04-15 Sharp Corp 半導体装置
JPH0828480B2 (ja) * 1983-09-30 1996-03-21 富士通株式会社 半導体集積回路装置
JPS60144956A (ja) * 1984-01-06 1985-07-31 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4613941A (en) * 1985-07-02 1986-09-23 The United States Of America As Represented By The Secretary Of The Army Routing method in computer aided customization of a two level automated universal array
DE3718598A1 (de) * 1986-06-04 1987-12-10 Mitsubishi Electric Corp Halbleiteranordnung
JPS63275138A (ja) * 1987-05-06 1988-11-11 Nec Corp 集積回路
US5185283A (en) * 1987-10-22 1993-02-09 Matsushita Electronics Corporation Method of making master slice type integrated circuit device
EP0314376B1 (en) * 1987-10-22 1995-01-04 Matsushita Electronics Corporation Master slice type integrated circuit device and method of using it
JPH02247943A (ja) * 1989-03-20 1990-10-03 Toshiba Corp カラー受像管用シャドウマスクの洗浄方法

Also Published As

Publication number Publication date
KR890016667A (ko) 1989-11-29
EP0338817B1 (en) 1999-09-08
EP0338817A3 (en) 1992-05-06
EP0650196A3 (enExample) 1995-05-10
DE68929068D1 (de) 1999-10-14
EP0650196A2 (en) 1995-04-26
US5506162A (en) 1996-04-09
DE68929068T2 (de) 1999-12-23
EP0338817A2 (en) 1989-10-25

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