KR900007043B1 - 전자 마이크로 회로의 접촉 영역상에 상승 접촉부를 제공하는 방법 - Google Patents

전자 마이크로 회로의 접촉 영역상에 상승 접촉부를 제공하는 방법 Download PDF

Info

Publication number
KR900007043B1
KR900007043B1 KR8201156A KR820001156A KR900007043B1 KR 900007043 B1 KR900007043 B1 KR 900007043B1 KR 8201156 A KR8201156 A KR 8201156A KR 820001156 A KR820001156 A KR 820001156A KR 900007043 B1 KR900007043 B1 KR 900007043B1
Authority
KR
South Korea
Prior art keywords
metal wire
capillary tube
ball
contact
wire
Prior art date
Application number
KR8201156A
Other languages
English (en)
Other versions
KR830009648A (ko
Inventor
안토니우스 반데파스 허마누스
아놀두스 크놉보우트 후베르트
Original Assignee
디.제이.삭커스
엔.브이.필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 디.제이.삭커스, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 디.제이.삭커스
Publication of KR830009648A publication Critical patent/KR830009648A/ko
Application granted granted Critical
Publication of KR900007043B1 publication Critical patent/KR900007043B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacture Of Switches (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

내용 없음.

Description

전자 마이크로 회로의 접촉 영역상에 상승 접촉부를 제공하는 방법
제1도는 볼이 형성된 금속선과 더불어 모세관의 하단부를 도시한 도면.
제2도는 기판상에서 가압되어 기판에 부착된 범프를 도시한 도면.
제3도는 모세관이 상방향 및 측방향으로 이동된 위치를 도시한 도면.
제4도는 금속선을 응축하여 약화시킨 것을 도시한 도면.
제5도는 금속선이 절단된 후 범프가 제공된 기판을 도시한 도면.
제6도는 다른 방식으로 기판상에 제공된 범프를 도시한 도면.
* 도면의 주요부분에 대한 부호의 설명
1 : 기판 2 : 접촉 영역
3 : 모세관 4 : 구멍
6 : 볼 7 : 노치
8 : 접촉부
본 발명은 전자 마이크로 회로의 접촉 영역상에 상승 접촉부를 제공하는 방법에 관한 것이다.
때때로 접촉 볼(bal1) 또는 범프(bump)로서 명명되는 상승 접촉부를 갖는 반도체 회로 소자는 공지되어있다. 다른 전자 마이크로 회로, 예컨대 자기 버블(bubble) 영역 창치 또는 액체 결정 장치에도 범프가 제공된다. 상기 범프는 기판상의 도체 또는 전혀 접속선이 필요없는 금속 도체 그리드(grid)의 도체와 전기접촉을 이루게 하는데 이용된다. 공지된 방식으로 범프를 제공하는 것은 비교적 복잡하고 여러 처리 단계를 필요로 한다. 통상적으로 상기 범프는 전기 도금법, 정확한 마스킹(masking)을 얻기 위해 사용되고 있는 광부식법을 통해 하나 이상의 층으로서 제공된다.
본 발명의 목적은 전기 도금법이 생략될 수 있는 범프를 제공하는 상당히 간편한 방법을 제공하는 것이다. 상기 목적을 성취하기 위해서, 본 발명에 따른 방법은, 볼이 열에너지에 의해 금속선의 일단부에 형성되며, 이 볼이 전자 마이크로 회로의 접촉 영역에 대해 압력을 받고 상기 접촉 영역에 연결되며, 아울러 금속선이 그 금속선내에 제공되는 볼 가까이의 취약부에서 절단되는 특징을 갖는다.
접촉 볼은 완전히 기계적으로 얻어지며, 부가적인 광부식법 및 전기 도금법이 필요없다. 따라서, 범프를 제공하는 것이 상당히 기계적인 방식으로 실행될 수 있다. 반도체 제조에 있어서 공지된 금속선 범프를 제공하는 방법이 부분적으로 사용될 수도 있다. 범프를 제공하는 방법이 간편하여 가격이 상당히 절감된다. 본 발명에 따른 방법의 양호한 실시예에서, 금속선이 모세관(capillary)을 통과하고 볼이 모세관의 하부에 의해서 전자 마이크로 회로상의 접촉 영역에 연결된 다음, 미소 거리에 걸쳐 모세관을 상방향 및 측방향으로 이동시키므로써 모세관이 금속선에 관련 이동되고, 그후 모세관이 다시 낮춰지며 모세관의 하부에 의해서 금속선에 노치(notch)가 제공된다.
취약부를 정확히 제공하는 것은 적절한 형태의 상승 접촉부를 얻는데에 매우 중요하다. 모세관의 하부는 결정할 수 있는 방식으로 금속선을 약화시킬 수 있으며 아울러 상승 접촉부의 재생 가능성이 커지게 된다. 예를 들어, 마이크로 프로세서가 사용될 수 있는 제어 수단은 약화될 위치를 먼저 정확하게 결정할 수 있게 해준다.
본 발명의 양호한 실시예에서, 모세관은 금속선 두께의 약 2 내지 3배만큼 상방향으로 이동되고 또 금속선 두께의 약 1.5 대지 2배 만큼 측방향으로 이동된다.
본 발명의 또다른 실시예에서는, 큰 강성과 세립(fine-granular) 결정 구조를 갖는 금속선이 사용되며,아울러 금속선의 취약부가 열 에너지에 의한 볼의 형성후 재결정에 의해 형성되고, 볼에 인접한 금속선 부분이 조립(coarse-granular) 결정 구조를 갖게 된다.
이제 도면을 참조하면서 본 발명에 대해 더욱 상세히 설명하겠다.
제1도는 상승 접촉부 또는 범프가 제공될 접촉 영역(2)을 갖는 기판(1)을 도시한 것이다. 다음 설명에서는 기판이 반도체 소자이고 또 접촉 영역이 반도체 소자의 활성 영역에 접속된 금속화 지대(metailizedzone)라고 가정하자. 그러나, 본 발명은 다른 전자 마이크로 회로, 예컨대, 자기 버블 영역 또는 액체 결정에, 또는 마이크로 전자공학의 하이브리드(hybrid) 회로에서 사용되는 캐리어(carrier)에 사용될 수도 있다. 상승 접촉부를 갗는 기판은 캐리어의 도체에 연결될 수도 있으며, 아울러 도체에 대한 모든 접촉부의 연결은 동시에 실행될 수 있으며 아무런 접속선도 필요없다.
제l도를 참조하면, 모세관(3)의 하단부가 반도체 소자(1)에 걸쳐 도시된다. 금속선(5)은 모세관의 구멍(bore)(4)으로 통과한다. 볼(6)은 금속선의 단부에 형성된다. 이는 공지된 방식, 예컨대 가스 불꽃을 통해 또는 정전기 방전을 통해 행해질 수도 있다. 금속선의 재료는 통상적으로 금 또는 알루미늄이지만, 구리같은 금속도 가능하다. 모세관(3)은 예컨대, 세라믹물질이 사용될 수도 있다. 원한다면 모세관은 공지된 수단으로써 가열될 수도 있다.
제2도는 반도체 소자(1)상의 접촉 영역(2)에 부착된 금속을 도시한 것이다. 볼(6)은 모세관(3)에 의해 접촉 영역(2)에 대해 가압되고, 열압축 결합 또는 초음파 진동에 의해 부착된다.
모세관(3)은 미소 거리에 걸쳐 측방향으로 이동된다. 이 위치는 제3도에 도시된다. 다음에, 모세관은 다시 낮춰지며(제4도), 노치(7)의 형태로된 취약부가 금속선에 형성된다. 이러한 약화의 결과, 금속선은 쉽게 절단된다. 제5도는 범프 또는 그 위에 제공된 접촉부(8)를 갖는 기판(1)을 도시한 것이다.
원한다면, 상승 접촉부가 기판(1)의 또다른 접촉 영역에 제공될 수 있다. 기계적으로 접촉부에 제공된 기판은 공지된 방식으로 캐리어의 반도체에 연결될 수도 있다.
이것은, 상승된 부분을 기판에 연결한 후 모세관이 금속선 두께의 약 2 내지 3배의 상방향 이동과 금속선두께의 약 1.5 내지 2배의 측방향 이동을 할 때 매우 유리함이 입증되었다. 이때 금속선의 약화는 양호한 방식으로 원하는 위치에서 이루어진다.
또한 금속선의 약화는 다르게 이루어질 수도 있다. 예컨대, 비교적 높은 강성 및 세립 결정 구조를 가진 금속선으로부터 시작할 수도 있다. 열에너지에 의해서 금속선에 볼(6)을 제공한 후(제1도)조립 결정 구조가 재결정의 결과로서 볼 바로위의 금속선 부분에 형성될 것이므로, 금속선은 이 부분에서 약화된다. 제2도에 도시된 것처럼, 금속선을 접촉 영역(2)에 연결한 후에, 견인력(pulling force)이 금속선상에 작용하므로, 금속선이 취약부에서 부러지게 된다. 따라서 제6도는 제공된 접촉부(8)를 도시한 것이다. 때때로 매우짧은 금속선 조각이 접촉부(8)상에 나타날 수도 있는데, 이것은 장애가 되지 않으며, 확실하지는 않지만 이때 접촉부를 가진 기판이 금속화된 홀(holl)을 갖는 캐리어에 연결된다. 다음에 짧은 금속선 조각들은 캐리어 구멍속으로 떨어질 것이다.
또한 금속선의 취약부가 다른 적당한 방식으로 제공될 수도 있음은 명백하다.

Claims (4)

  1. 전자 마이크로 회로의 접촉 영역(2)상에 상승 접촉부(8)를 제공하는 방법에 있어서, 볼(6)이 열 에너지에 의해서 금속선(5)의 일단부에 형성되고, 상기 볼(6)이 전자 마이크로 회로의 접촉 영역(2)에 대해 가압되고 상기 접촉 영역(2)에 부착되며, 금속선(5)이 볼(6) 근처 금속선(5)에 제공된 취약부에서 절단되는것을 특징으로 하는 전자 마이크로 회로의 접촉 영역(2)상에 상승 접촉부(8)를 제공하는 방법.
  2. 제1항에 있어서, 금속선(5)이 모세관(3)으로 통과되고, 상기 볼(6)이 모세관(3)의 하측부에 의해 전자 마이크로 회로상의 접촉 영역(2)에 연결되며, 모세관(3)을 미소 거리에 걸쳐 상방향 및 측방향으로 이동시키므로써 모세관(3)이 금속선(5)에 관련 이동되며, 그 다음에 모세관(3)이 다시 낮춰지고 모세관(3)의 하측부에 의해서 노치가 금속선(5)에 제공되는 것을 특징으로 하는 전자 마이크로 회로의 접촉 영역(2)상에 상승 접촉부(8)를 제공하는 방법.
  3. 제2항에 있어서, 모세관(3)이 금속선(5) 두께의 약 2 내지 3배 만큼 상방향으로 이동되고 금속선(5)두께의 약 1.5 내지 2배 만큼 측방향으로 이동되는 것을 특징으로 하는 전자 마이크로 회로의 접촉 영역(2)상에 상승 접촉부(8)를 제공하는 방법.
  4. 제1항에 있어서, 큰 강성 및 세립 결정 구조를 갖는 금속선(5)이 사용되며, 열 에너지에 의해서 볼(6)이 형성된 후 금속선(5)내에 취약부가 재결정에 의해 형성되며, 볼(6)에 인접한 금속선(5) 부분이 조립결정 구조를 갖게 되는 것을 특징으로 하는 전자 마이크로 회로의 접촉 영역(2)상에 상승 접촉부(8)를 제공하는 방법.
KR8201156A 1981-03-20 1982-03-18 전자 마이크로 회로의 접촉 영역상에 상승 접촉부를 제공하는 방법 KR900007043B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL8101371A NL184184C (nl) 1981-03-20 1981-03-20 Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen.
NL8101371 1981-03-20
NL?8101371 1981-03-20

Publications (2)

Publication Number Publication Date
KR830009648A KR830009648A (ko) 1983-12-22
KR900007043B1 true KR900007043B1 (ko) 1990-09-27

Family

ID=19837199

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8201156A KR900007043B1 (ko) 1981-03-20 1982-03-18 전자 마이크로 회로의 접촉 영역상에 상승 접촉부를 제공하는 방법

Country Status (12)

Country Link
US (1) US4442967A (ko)
JP (1) JPS57163919A (ko)
KR (1) KR900007043B1 (ko)
AU (1) AU548433B2 (ko)
CA (1) CA1181534A (ko)
CH (1) CH658540A5 (ko)
DE (1) DE3209242C2 (ko)
FR (1) FR2502397B1 (ko)
GB (1) GB2095473B (ko)
IE (1) IE53371B1 (ko)
IT (1) IT1150472B (ko)
NL (1) NL184184C (ko)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
IT1183375B (it) * 1984-02-24 1987-10-22 Hitachi Ltd Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori
JPS60223149A (ja) * 1984-04-19 1985-11-07 Hitachi Ltd 半導体装置
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5189507A (en) * 1986-12-17 1993-02-23 Raychem Corporation Interconnection of electronic components
JPS63173345A (ja) * 1987-01-12 1988-07-16 Nec Kansai Ltd バンプ電極形成方法
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
US5195237A (en) * 1987-05-21 1993-03-23 Cray Computer Corporation Flying leads for integrated circuits
EP0376924A3 (en) * 1987-05-21 1990-08-22 RAYCHEM CORPORATION (a Delaware corporation) Gold compression bonding
US5054192A (en) * 1987-05-21 1991-10-08 Cray Computer Corporation Lead bonding of chips to circuit boards and circuit boards to circuit boards
US5184400A (en) * 1987-05-21 1993-02-09 Cray Computer Corporation Method for manufacturing a twisted wire jumper electrical interconnector
US5112232A (en) * 1987-05-21 1992-05-12 Cray Computer Corporation Twisted wire jumper electrical interconnector
JP2506861B2 (ja) * 1987-12-08 1996-06-12 松下電器産業株式会社 電気的接続接点の形成方法
US5014111A (en) * 1987-12-08 1991-05-07 Matsushita Electric Industrial Co., Ltd. Electrical contact bump and a package provided with the same
JPH0237735A (ja) * 1988-07-27 1990-02-07 Semiconductor Energy Lab Co Ltd 半導体チップの実装構造
DE3829538A1 (de) * 1988-08-31 1990-03-08 Siemens Ag Verfahren zum verbinden eines halbleiterchips mit einem substrat
JPH02101754A (ja) * 1988-10-11 1990-04-13 Hitachi Ltd ボンディング方法及びボンディング装置
US4948030A (en) * 1989-01-30 1990-08-14 Motorola, Inc. Bond connection for components
JPH0749794Y2 (ja) * 1989-03-15 1995-11-13 三菱マテリアル株式会社 ワイヤレスボンデイング用金バンプ
JPH02250328A (ja) * 1989-03-24 1990-10-08 Toshiba Corp ワイヤボンダ、ワイヤボンダを用いたバンプ形成方法
US5060843A (en) * 1989-06-07 1991-10-29 Nec Corporation Process of forming bump on electrode of semiconductor chip and apparatus used therefor
JP2830109B2 (ja) * 1989-07-19 1998-12-02 日本電気株式会社 バンプ形成方法およびバンプ形成装置
JPH03208354A (ja) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5172851A (en) * 1990-09-20 1992-12-22 Matsushita Electronics Corporation Method of forming a bump electrode and manufacturing a resin-encapsulated semiconductor device
JP2555811B2 (ja) * 1991-09-10 1996-11-20 富士通株式会社 半導体チップのフリップチップ接合方法
DE4307162C2 (de) * 1993-03-06 2000-06-08 Amatech Advanced Micromechanic Verbindung, Verfahren und Vorrichtung zur Herstellung einer Verbindung auf einer Chipanschlußfläche
KR960000793B1 (ko) * 1993-04-07 1996-01-12 삼성전자주식회사 노운 굳 다이 어레이 및 그 제조방법
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US5820014A (en) 1993-11-16 1998-10-13 Form Factor, Inc. Solder preforms
US5559054A (en) * 1994-12-23 1996-09-24 Motorola, Inc. Method for ball bumping a semiconductor device
US6012625A (en) * 1995-03-10 2000-01-11 Fraunhofer-Gesellschaft Zur Forderungder Angewandten Forschung E.V. Process and device for forming raised metallised contacts
US5650667A (en) * 1995-10-30 1997-07-22 National Semiconductor Corporation Process of forming conductive bumps on the electrodes of semiconductor chips using lapping and the bumps thereby created
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
JP3349886B2 (ja) * 1996-04-18 2002-11-25 松下電器産業株式会社 半導体素子の２段突起形状バンプの形成方法
JP3344235B2 (ja) * 1996-10-07 2002-11-11 株式会社デンソー ワイヤボンディング方法
JP2000133672A (ja) 1998-10-28 2000-05-12 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP2000150560A (ja) 1998-11-13 2000-05-30 Seiko Epson Corp バンプ形成方法及びバンプ形成用ボンディングツール、半導体ウエーハ、半導体チップ及び半導体装置並びにこれらの製造方法、回路基板並びに電子機器
CN1184616C (zh) 1998-12-04 2005-01-12 阿尔卑斯电气株式会社 磁头和磁头的制造方法及其所用的连接用毛细管
US6227437B1 (en) 1999-08-24 2001-05-08 Kulicke & Soffa Industries Inc. Solder ball delivery and reflow apparatus and method of using the same
US6386433B1 (en) 1999-08-24 2002-05-14 Kulicke & Soffa Investments, Inc. Solder ball delivery and reflow apparatus and method
JP4000743B2 (ja) 2000-03-13 2007-10-31 株式会社デンソー 電子部品の実装方法
GB2362504A (en) * 2000-04-20 2001-11-21 Pixel Fusion Ltd Pin contacts
EP1275143B1 (en) 2000-04-20 2007-08-22 Elwyn Paul Michael Wakefield Process for forming electrical/mechanical connections
US6511865B1 (en) 2000-09-20 2003-01-28 Charles W. C. Lin Method for forming a ball bond connection joint on a conductive trace and conductive pad in a semiconductor chip assembly
US6350386B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly
US6350632B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with ball bond connection joint
US6448108B1 (en) 2000-10-02 2002-09-10 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6544813B1 (en) 2000-10-02 2003-04-08 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6492252B1 (en) 2000-10-13 2002-12-10 Bridge Semiconductor Corporation Method of connecting a bumped conductive trace to a semiconductor chip
US7132741B1 (en) 2000-10-13 2006-11-07 Bridge Semiconductor Corporation Semiconductor chip assembly with carved bumped terminal
US6876072B1 (en) 2000-10-13 2005-04-05 Bridge Semiconductor Corporation Semiconductor chip assembly with chip in substrate cavity
US6673710B1 (en) 2000-10-13 2004-01-06 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip
US7129113B1 (en) 2000-10-13 2006-10-31 Bridge Semiconductor Corporation Method of making a three-dimensional stacked semiconductor package with a metal pillar in an encapsulant aperture
US6440835B1 (en) 2000-10-13 2002-08-27 Charles W. C. Lin Method of connecting a conductive trace to a semiconductor chip
US7129575B1 (en) 2000-10-13 2006-10-31 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped metal pillar
US7414319B2 (en) * 2000-10-13 2008-08-19 Bridge Semiconductor Corporation Semiconductor chip assembly with metal containment wall and solder terminal
US7264991B1 (en) 2000-10-13 2007-09-04 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using conductive adhesive
US7071089B1 (en) 2000-10-13 2006-07-04 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a carved bumped terminal
US6699780B1 (en) 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
US6576539B1 (en) 2000-10-13 2003-06-10 Charles W.C. Lin Semiconductor chip assembly with interlocked conductive trace
US7190080B1 (en) 2000-10-13 2007-03-13 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal pillar
US7075186B1 (en) 2000-10-13 2006-07-11 Bridge Semiconductor Corporation Semiconductor chip assembly with interlocked contact terminal
US6949408B1 (en) 2000-10-13 2005-09-27 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US7094676B1 (en) 2000-10-13 2006-08-22 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal pillar
US6740576B1 (en) 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
US7009297B1 (en) 2000-10-13 2006-03-07 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal particle
US6576493B1 (en) 2000-10-13 2003-06-10 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US7262082B1 (en) 2000-10-13 2007-08-28 Bridge Semiconductor Corporation Method of making a three-dimensional stacked semiconductor package with a metal pillar and a conductive interconnect in an encapsulant aperture
US7319265B1 (en) 2000-10-13 2008-01-15 Bridge Semiconductor Corporation Semiconductor chip assembly with precision-formed metal pillar
US6872591B1 (en) 2000-10-13 2005-03-29 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a conductive trace and a substrate
US6667229B1 (en) 2000-10-13 2003-12-23 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace and an insulative base to a semiconductor chip
US6548393B1 (en) 2000-10-13 2003-04-15 Charles W. C. Lin Semiconductor chip assembly with hardened connection joint
US6537851B1 (en) 2000-10-13 2003-03-25 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace to a semiconductor chip
US6984576B1 (en) 2000-10-13 2006-01-10 Bridge Semiconductor Corporation Method of connecting an additively and subtractively formed conductive trace and an insulative base to a semiconductor chip
US6908788B1 (en) 2000-10-13 2005-06-21 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using a metal base
US6444489B1 (en) 2000-12-15 2002-09-03 Charles W. C. Lin Semiconductor chip assembly with bumped molded substrate
US6653170B1 (en) 2001-02-06 2003-11-25 Charles W. C. Lin Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit
JP3935370B2 (ja) * 2002-02-19 2007-06-20 セイコーエプソン株式会社 バンプ付き半導体素子の製造方法、半導体装置及びその製造方法、回路基板並びに電子機器
US6622903B1 (en) * 2002-03-27 2003-09-23 Palomar Technologies, Inc. Production of a tailless ball bump
JP3854232B2 (ja) * 2003-02-17 2006-12-06 株式会社新川 バンプ形成方法及びワイヤボンディング方法
DE10325566A1 (de) * 2003-06-05 2005-01-13 Infineon Technologies Ag Chipkartenmodul
US7993983B1 (en) 2003-11-17 2011-08-09 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with chip and encapsulant grinding
US7538415B1 (en) 2003-11-20 2009-05-26 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal, filler and insulative base
US7425759B1 (en) 2003-11-20 2008-09-16 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal and filler
US7446419B1 (en) 2004-11-10 2008-11-04 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar of stacked metal balls
US7268421B1 (en) * 2004-11-10 2007-09-11 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar that includes enlarged ball bond
US7750483B1 (en) 2004-11-10 2010-07-06 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal
US20070216026A1 (en) * 2006-03-20 2007-09-20 Adams Zhu Aluminum bump bonding for fine aluminum wire
DE102006033222B4 (de) * 2006-07-18 2014-04-30 Epcos Ag Modul mit flachem Aufbau und Verfahren zur Bestückung
DE102006038875B4 (de) * 2006-08-18 2013-02-28 Infineon Technologies Ag Herstellungsverfahre für ein elektronisches Bauelement und elektronisches Bauelement
US7494843B1 (en) 2006-12-26 2009-02-24 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with thermal conductor and encapsulant grinding
US7811863B1 (en) 2006-10-26 2010-10-12 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with metal pillar and encapsulant grinding and heat sink attachment
US8372741B1 (en) * 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3357090A (en) * 1963-05-23 1967-12-12 Transitron Electronic Corp Vibratory welding tip and method of welding
US3358897A (en) * 1964-03-31 1967-12-19 Tempress Res Co Electric lead wire bonding tools
US3430835A (en) * 1966-06-07 1969-03-04 Westinghouse Electric Corp Wire bonding apparatus for microelectronic components
US3460238A (en) * 1967-04-20 1969-08-12 Motorola Inc Wire severing in wire bonding machines
DE7006122U (ko) * 1969-04-26 1900-01-01
US3623649A (en) * 1969-06-09 1971-11-30 Gen Motors Corp Wedge bonding tool for the attachment of semiconductor leads
DE2006703A1 (de) * 1970-02-13 1971-08-26 Siemens Ag Isolationsschicht auf einem Halbleiter grundkorper
JPS50160773A (ko) * 1974-06-18 1975-12-26
GB1536872A (en) * 1975-05-15 1978-12-20 Welding Inst Electrical inter-connection method and apparatus
FR2412943A1 (fr) * 1977-12-20 1979-07-20 Thomson Csf Procede de realisation de connexions d'un dispositif semi-conducteur sur embase, appareil pour la mise en oeuvre du procede, et dispositif semi-conducteur obtenu par ce procede
US4213556A (en) * 1978-10-02 1980-07-22 General Motors Corporation Method and apparatus to detect automatic wire bonder failure
JPS55118643A (en) * 1979-03-06 1980-09-11 Toshiba Corp Wire bonding process
JPS55158642A (en) * 1979-05-30 1980-12-10 Noge Denki Kogyo:Kk Bonding alloy wire for assembling semiconductor device

Also Published As

Publication number Publication date
GB2095473B (en) 1984-09-19
JPS57163919A (en) 1982-10-08
JPH0441519B2 (ko) 1992-07-08
IE820631L (en) 1982-09-20
NL184184B (nl) 1988-12-01
CA1181534A (en) 1985-01-22
GB2095473A (en) 1982-09-29
US4442967A (en) 1984-04-17
IE53371B1 (en) 1988-10-26
DE3209242A1 (de) 1982-11-11
KR830009648A (ko) 1983-12-22
AU8160382A (en) 1982-09-23
DE3209242C2 (de) 1985-04-11
NL184184C (nl) 1989-05-01
FR2502397A1 (fr) 1982-09-24
NL8101371A (nl) 1982-10-18
FR2502397B1 (fr) 1986-07-25
CH658540A5 (de) 1986-11-14
AU548433B2 (en) 1985-12-12
IT8220237A0 (it) 1982-03-17
IT1150472B (it) 1986-12-10

Similar Documents

Publication Publication Date Title
KR900007043B1 (ko) 전자 마이크로 회로의 접촉 영역상에 상승 접촉부를 제공하는 방법
US6020217A (en) Semiconductor devices with CSP packages and method for making them
KR100407055B1 (ko) 유전체층을갖는마이크로전자리드구조
US6850084B2 (en) Assembly for testing silicon wafers which have a through-via
US5844304A (en) Process for manufacturing semiconductor device and semiconductor wafer
US5478007A (en) Method for interconnection of integrated circuit chip and substrate
US6163463A (en) Integrated circuit chip to substrate interconnection
US6153940A (en) Core metal soldering knob flip-chip technology
US7256490B2 (en) Test carrier for semiconductor components having conductors defined by grooves
US6414849B1 (en) Low stress and low profile cavity down flip chip and wire bond BGA package
US5960262A (en) Stitch bond enhancement for hard-to-bond materials
US20090289360A1 (en) Workpiece contact pads with elevated ring for restricting horizontal movement of terminals of ic during pressing
KR960012397A (ko) 칩 사이즈 패키지형 반도체 장치의 제조 방법
KR980012316A (ko) 반도체 장치 및 그 제조 방법
US6423939B1 (en) Micro soldering method and apparatus
US6781065B1 (en) Solder-coated articles useful for substrate attachment
US5704593A (en) Film carrier tape for semiconductor package and semiconductor device employing the same
US6323434B1 (en) Circuit board and production method thereof
KR100345075B1 (ko) 칩 사이즈 패키지
KR20030084513A (ko) 발광 다이오드의 플립칩 공정방법
US20020109109A1 (en) Photo-conductive relay and method of making same
JP3002034B2 (ja) 半導体集積回路装置
US20130214408A1 (en) Interposer Having Conductive Posts
US6571468B1 (en) Traceless flip chip assembly and method
KR100249539B1 (ko) 반도체 칩 및 그 제조방법