JPS57163919A - Method of forming protruded contact - Google Patents

Method of forming protruded contact

Info

Publication number
JPS57163919A
JPS57163919A JP4180782A JP4180782A JPS57163919A JP S57163919 A JPS57163919 A JP S57163919A JP 4180782 A JP4180782 A JP 4180782A JP 4180782 A JP4180782 A JP 4180782A JP S57163919 A JPS57163919 A JP S57163919A
Authority
JP
Japan
Prior art keywords
protruded contact
forming protruded
forming
contact
protruded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4180782A
Other languages
English (en)
Other versions
JPH0441519B2 (ja
Inventor
Antoniusu Ban De Pa Herumanusu
Aanorudasu Kunobou Hiyuiberuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS57163919A publication Critical patent/JPS57163919A/ja
Publication of JPH0441519B2 publication Critical patent/JPH0441519B2/ja
Granted legal-status Critical Current

Links

Classifications

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacture Of Switches (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
JP4180782A 1981-03-20 1982-03-18 Method of forming protruded contact Granted JPS57163919A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8101371A NL184184C (nl) 1981-03-20 1981-03-20 Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen.

Publications (2)

Publication Number Publication Date
JPS57163919A true JPS57163919A (en) 1982-10-08
JPH0441519B2 JPH0441519B2 (ja) 1992-07-08

Family

ID=19837199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4180782A Granted JPS57163919A (en) 1981-03-20 1982-03-18 Method of forming protruded contact

Country Status (12)

Country Link
US (1) US4442967A (ja)
JP (1) JPS57163919A (ja)
KR (1) KR900007043B1 (ja)
AU (1) AU548433B2 (ja)
CA (1) CA1181534A (ja)
CH (1) CH658540A5 (ja)
DE (1) DE3209242C2 (ja)
FR (1) FR2502397B1 (ja)
GB (1) GB2095473B (ja)
IE (1) IE53371B1 (ja)
IT (1) IT1150472B (ja)
NL (1) NL184184C (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63173345A (ja) * 1987-01-12 1988-07-16 Nec Kansai Ltd バンプ電極形成方法
JPH01151182A (ja) * 1987-12-08 1989-06-13 Matsushita Electric Ind Co Ltd 電気的接続接点の形成方法
JPH0237735A (ja) * 1988-07-27 1990-02-07 Semiconductor Energy Lab Co Ltd 半導体チップの実装構造
JPH02120836U (ja) * 1989-03-15 1990-09-28
JPH02250328A (ja) * 1989-03-24 1990-10-08 Toshiba Corp ワイヤボンダ、ワイヤボンダを用いたバンプ形成方法
US6323552B1 (en) 1998-11-13 2001-11-27 Seiko Epson Corporation Semiconductor device having bumps
US6335568B1 (en) 1998-10-28 2002-01-01 Seiko Epson Corporation Semiconductor device and method of fabrication thereof, circuit board, and electronic equipment
US6946380B2 (en) 2002-02-19 2005-09-20 Seiko Epson Corporation Method for forming bump, semiconductor element having bumps and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
JP2017038074A (ja) * 2012-02-24 2017-02-16 インヴェンサス・コーポレイション 超小型電子パッケージを作製する方法

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
IT1183375B (it) * 1984-02-24 1987-10-22 Hitachi Ltd Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori
JPS60223149A (ja) * 1984-04-19 1985-11-07 Hitachi Ltd 半導体装置
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5189507A (en) * 1986-12-17 1993-02-23 Raychem Corporation Interconnection of electronic components
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
US5112232A (en) * 1987-05-21 1992-05-12 Cray Computer Corporation Twisted wire jumper electrical interconnector
US5054192A (en) * 1987-05-21 1991-10-08 Cray Computer Corporation Lead bonding of chips to circuit boards and circuit boards to circuit boards
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JPS63173345A (ja) * 1987-01-12 1988-07-16 Nec Kansai Ltd バンプ電極形成方法
JPH01151182A (ja) * 1987-12-08 1989-06-13 Matsushita Electric Ind Co Ltd 電気的接続接点の形成方法
JPH0237735A (ja) * 1988-07-27 1990-02-07 Semiconductor Energy Lab Co Ltd 半導体チップの実装構造
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JPH02250328A (ja) * 1989-03-24 1990-10-08 Toshiba Corp ワイヤボンダ、ワイヤボンダを用いたバンプ形成方法
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US6551918B2 (en) 1998-10-28 2003-04-22 Seiko Epson Corporation Semiconductor device and method of fabrication thereof, circuit board, and electronic equipment
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Also Published As

Publication number Publication date
JPH0441519B2 (ja) 1992-07-08
US4442967A (en) 1984-04-17
CH658540A5 (de) 1986-11-14
IE53371B1 (en) 1988-10-26
NL8101371A (nl) 1982-10-18
CA1181534A (en) 1985-01-22
IE820631L (en) 1982-09-20
KR830009648A (ko) 1983-12-22
IT1150472B (it) 1986-12-10
IT8220237A0 (it) 1982-03-17
FR2502397B1 (fr) 1986-07-25
DE3209242C2 (de) 1985-04-11
AU548433B2 (en) 1985-12-12
NL184184C (nl) 1989-05-01
GB2095473A (en) 1982-09-29
FR2502397A1 (fr) 1982-09-24
AU8160382A (en) 1982-09-23
NL184184B (nl) 1988-12-01
KR900007043B1 (ko) 1990-09-27
DE3209242A1 (de) 1982-11-11
GB2095473B (en) 1984-09-19

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