KR890015394A - 부식이 감소된 리드 프레임 및 이의 제조방법 - Google Patents

부식이 감소된 리드 프레임 및 이의 제조방법 Download PDF

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KR890015394A
KR890015394A KR1019890003825A KR890003825A KR890015394A KR 890015394 A KR890015394 A KR 890015394A KR 1019890003825 A KR1019890003825 A KR 1019890003825A KR 890003825 A KR890003825 A KR 890003825A KR 890015394 A KR890015394 A KR 890015394A
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South Korea
Prior art keywords
lead frame
layer
base material
nickel
reduction potential
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KR1019890003825A
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English (en)
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KR0129118B1 (ko
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씨.애보트 도날드
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엔.라이스 머래트
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR890015394A publication Critical patent/KR890015394A/ko
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Publication of KR0129118B1 publication Critical patent/KR0129118B1/ko

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    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12944Ni-base component

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Abstract

내용 없음

Description

부식이 감소된 리드 프레임 및 이의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3 도는 본 발명의 리드 프레임의 단면도.

Claims (23)

  1. 반도체 집적회로에 전기적 접촉을 제공하기 위한 리드 프레임에 있어서, 다수의 리드가 각각, 제 1 표준 환원 전위를 갖고 있는 모재 영역, 상부에 제 2 표준 환원 전위를 갖고 있고 모재 영역으로부터 분리된 상부층, 모재 영역과, 모재 이온이 갈바니 전위력 상태하에서 이동할 수 있게 하는 상부 층 사이에 배치된 중간층, 및 이온이 상부층에 전기적으로 끌어 당겨지지 않도록 중간층 양단의 갈바니 전위를 감소시키기 위해 모재 영역과 중간층 사이에 배치된 분리층으로 구성된 것을 특징으로 하는 리드 프레임.
  2. 제 1 항에 있어서, 분리 층과 모재 사이의 스트라이크 층을 포함하는 것을 특징으로 하는 리드 프레임.
  3. 제 2 항에 있어서, 스트라이크 층을 니켈 물질로 구성된 것을 특징으로 하는 리드 프레임.
  4. 제 3 항에 있어서, 니켈 층이 5마이크로인치(1.27×10-5㎝)이하의 두께를 갖는 것을 특징으로 하는 리드 프레임.
  5. 제 3 항에 있어서, 모재가 구리 또는 구리 합금으로 구성된 것을 특징으로 하는 리드 프레임.
  6. 제 5 항에 있어서, 분리 층이 팔라듐 또는 팔라듐 합금으로 구성된 것을 특징으로 하는 리드 프레임.
  7. 제 5 항에 있어서, 분리 층이 팔라듐/니켈 합금으로 구성된 것을 특징으로 하는 리드 프레임.
  8. 제 6 항에 있어서, 분리층이 3마이크로인치(7.62×10-6㎝)이하의 두께를 갖는 것을 특징으로 하는 리드 프레임.
  9. 제 6 항에 있어서, 상부 층이 팔라듐으로 구성된 것을 특징으로 하는 리드 프레임.
  10. 제 9 항에 있어서, 중간층이 니켈로 구성된 것을 특징으로 하는 리드 프레임.
  11. 집적 회로에 전기적 접촉을 제공하기 위한 리드 프레임에 있어서, 집적회로를 지지 하기 위한 플랫폼 부재, 및 직접 회로에 전기적으로 접속된 다수의 리드로 구성되고, 각각의 리드가. 선정된 표준 환원 전위를 갖는 이온을 갖고 있는 모재 영역, 제 2 도의 선정된 표준환원 전위를 갖고 있는 모재 영역 상부에 놓여 있는 상부층, 상부층과 모재 영역 사이에 배치된 중간층, 및 이온이 상부층에 전기적으로 끌어당겨지지 않도록 모재 영역과 중간층 사이에 배치된 제 2 표준 환원 전위와 거의 동일한 표준환원 전위를 갖고 있는 분리층으로 구성된 것을 특징으로 하는 리드 프레임.
  12. 제11항에 있어서, 모재 영역이 구리로 구성된 것을 특징으로 하는 리드 프레임.
  13. 제11항에 있어서, 모재 영역이 스테인레스 강철로 구성된 것을 특징으로 하는 리드 프레임.
  14. 제12항에 있어서, 상부 층이 팔라듐으로 구성된 것을 특징으로 하는 리드프레임.
  15. 제14항에 있어서, 분리층이 팔라듐/니켈 합금으로 구성된 것을 특징으로 하는 리드 프레임.
  16. 제15항에 있어서, 중간층이 니켈로 구성된 것을 특징으로 하는 리드 프레임.
  17. 제16항에 있어서, 모재 영역과 분리층 사이에 배치된 니켈 스트라이크를 포함하는 것을 특징으로 하는 리드 프레임.
  18. 제11항에 있어서, 모재 영역이 합금(42)로 구성된 것을 특징으로 하는 리드 프레임.
  19. 반도체 회로에 전기적 접촉을 제공하기 위한 리드 프레임에 있어서, 구리물질로 형성되고 반도체 회로에 전기적 접촉을 연장시키는 다수의 리드, 구리 물질 상부에 있는 니켈 스트라이크, 니켈 스트라이크 상부에 있는 팔라듐/니켈 합금, 층, 팔라듐/니켈 층 상부에 있는 니켈 층, 및 니켈 층 상부에 있는 파라듐 층으로 구성된 것을 특징으로 하는 리드 프레임.
  20. 반도체 집적 회로에 전기적 접촉을 제공하기 위한 리드 프레임을 형성하는 방법에 있어서, 제 1 표준 환원 전위를 갖고 있는 모재로부터 리드프레임을 형성하는 수단, 모재 상부에 있고, 제 2 표준 환원 전위를 갖고 있는 분리 층을 형성하는 수단, 모재의 열 확산을 방지하기 위해 분리층 상부에 있는 중간 층을 형성하는 수단, 및 제 2 표준 환원 전위와 거의 동일한 표준 환원 전위를 갖고 있고 중간층 상부에 있는 상부 층을 형성하는 수단을 포함하는 것을 특징으로 하는 방법.
  21. 제20항에 있어서, 중간층의 기공률을 감소시키기 위해 분리 층과 모재 사이에 스트라이크 층을 형성하는 수단을 포함하는 것을 특징으로 하는 방법.
  22. 제20항에 있어서, 집적회로에 리드 프레임을 전기적으로 접속시키는 수단을 포함하는 것을 특징으로 하는 방법.
  23. 제19항의 방법에 의해 형성된 리드 프레임.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890003825A 1988-03-28 1989-03-27 부식이 감소된 리드 프레임 및 이의 제조 방법 KR0129118B1 (ko)

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DE68923024D1 (de) 1995-07-20
DE68923024T2 (de) 1995-11-02
EP0335608A3 (en) 1991-10-30
EP0335608B1 (en) 1995-06-14
JPH0242753A (ja) 1990-02-13
US6245448B1 (en) 2001-06-12
KR0129118B1 (ko) 1998-04-06
EP0335608A2 (en) 1989-10-04

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