MX151818A - Mejoras en dispositivo semiconductor con contacto de baja resistencia interconstruido y metodo para fabricarlo - Google Patents

Mejoras en dispositivo semiconductor con contacto de baja resistencia interconstruido y metodo para fabricarlo

Info

Publication number
MX151818A
MX151818A MX191926A MX19192682A MX151818A MX 151818 A MX151818 A MX 151818A MX 191926 A MX191926 A MX 191926A MX 19192682 A MX19192682 A MX 19192682A MX 151818 A MX151818 A MX 151818A
Authority
MX
Mexico
Prior art keywords
electrode
low resistance
semiconductor device
manufacture
resistance contact
Prior art date
Application number
MX191926A
Other languages
English (en)
Inventor
King Owyang
Leonard Stein
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of MX151818A publication Critical patent/MX151818A/es

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    • HELECTRICITY
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    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
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    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
MX191926A 1981-03-23 1982-03-22 Mejoras en dispositivo semiconductor con contacto de baja resistencia interconstruido y metodo para fabricarlo MX151818A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24623181A 1981-03-23 1981-03-23

Publications (1)

Publication Number Publication Date
MX151818A true MX151818A (es) 1985-03-27

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ID=22929835

Family Applications (1)

Application Number Title Priority Date Filing Date
MX191926A MX151818A (es) 1981-03-23 1982-03-22 Mejoras en dispositivo semiconductor con contacto de baja resistencia interconstruido y metodo para fabricarlo

Country Status (6)

Country Link
JP (1) JPS57172753A (es)
CA (1) CA1197629A (es)
DE (1) DE3209666A1 (es)
FR (1) FR2502399B1 (es)
GB (1) GB2095904B (es)
MX (1) MX151818A (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119777A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
DE3446789A1 (de) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleiterbauelementen
DE3635708A1 (de) * 1986-10-21 1988-04-28 Bbc Brown Boveri & Cie Verfahren und anordnung zur kontaktierung einer elektrode mit mehreren emitter-/kathoden-bereichen eines halbleiterbauelementes
GB8902431D0 (en) * 1989-02-03 1989-03-22 Plessey Co Plc Flip chip solder bond structure for devices with gold based metallisation
FR2759493B1 (fr) * 1997-02-12 2001-01-26 Motorola Semiconducteurs Dispositif de puissance a semiconducteur
US6130141A (en) * 1998-10-14 2000-10-10 Lucent Technologies Inc. Flip chip metallization
EP1306898A1 (en) * 2001-10-29 2003-05-02 Dialog Semiconductor GmbH Sub-milliohm on-chip interconnection
US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
DE10355953B4 (de) * 2003-11-29 2005-10-20 Infineon Technologies Ag Verfahren zum Galvanisieren und Kontaktvorsprungsanordnung
CN110998807B (zh) 2017-08-01 2023-12-01 株式会社村田制作所 半导体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
FR1569479A (es) * 1967-07-13 1969-05-30
FR2254879B1 (es) * 1973-12-12 1977-09-23 Alsthom Cgee
JPS50114183A (es) * 1974-02-15 1975-09-06

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JPS57172753A (en) 1982-10-23
GB2095904A (en) 1982-10-06
FR2502399A1 (fr) 1982-09-24
GB2095904B (en) 1985-11-27
DE3209666A1 (de) 1982-11-11
FR2502399B1 (fr) 1986-01-31
CA1197629A (en) 1985-12-03

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