JPS57172753A - Semiconductor element with low resistance contact projected - Google Patents

Semiconductor element with low resistance contact projected

Info

Publication number
JPS57172753A
JPS57172753A JP4705182A JP4705182A JPS57172753A JP S57172753 A JPS57172753 A JP S57172753A JP 4705182 A JP4705182 A JP 4705182A JP 4705182 A JP4705182 A JP 4705182A JP S57172753 A JPS57172753 A JP S57172753A
Authority
JP
Japan
Prior art keywords
electrode
low resistance
semiconductor element
electrodes
resistance contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4705182A
Other languages
English (en)
Inventor
Ouyangu Kingu
Sutein Reonaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS57172753A publication Critical patent/JPS57172753A/ja
Pending legal-status Critical Current

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    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
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    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
JP4705182A 1981-03-23 1982-03-23 Semiconductor element with low resistance contact projected Pending JPS57172753A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24623181A 1981-03-23 1981-03-23

Publications (1)

Publication Number Publication Date
JPS57172753A true JPS57172753A (en) 1982-10-23

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ID=22929835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4705182A Pending JPS57172753A (en) 1981-03-23 1982-03-23 Semiconductor element with low resistance contact projected

Country Status (6)

Country Link
JP (1) JPS57172753A (ja)
CA (1) CA1197629A (ja)
DE (1) DE3209666A1 (ja)
FR (1) FR2502399B1 (ja)
GB (1) GB2095904B (ja)
MX (1) MX151818A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006523025A (ja) * 2003-04-10 2006-10-05 サンパワー コーポレイション 太陽電池用金属コンタクト構造体及び製法
JP2010532927A (ja) * 2007-07-10 2010-10-14 ドイチェ セル ゲーエムベーハー 半導体素子のためのコンタクト構造とその製造方法
WO2019026851A1 (ja) * 2017-08-01 2019-02-07 株式会社村田製作所 半導体装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119777A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
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DE3635708A1 (de) * 1986-10-21 1988-04-28 Bbc Brown Boveri & Cie Verfahren und anordnung zur kontaktierung einer elektrode mit mehreren emitter-/kathoden-bereichen eines halbleiterbauelementes
GB8902431D0 (en) * 1989-02-03 1989-03-22 Plessey Co Plc Flip chip solder bond structure for devices with gold based metallisation
FR2759493B1 (fr) * 1997-02-12 2001-01-26 Motorola Semiconducteurs Dispositif de puissance a semiconducteur
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US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
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JP2006523025A (ja) * 2003-04-10 2006-10-05 サンパワー コーポレイション 太陽電池用金属コンタクト構造体及び製法
JP2010532927A (ja) * 2007-07-10 2010-10-14 ドイチェ セル ゲーエムベーハー 半導体素子のためのコンタクト構造とその製造方法
WO2019026851A1 (ja) * 2017-08-01 2019-02-07 株式会社村田製作所 半導体装置
US10903343B2 (en) 2017-08-01 2021-01-26 Murata Manufacturing Co., Ltd. Semiconductor device
US11411102B2 (en) 2017-08-01 2022-08-09 Murata Manufacturing Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
GB2095904A (en) 1982-10-06
GB2095904B (en) 1985-11-27
CA1197629A (en) 1985-12-03
MX151818A (es) 1985-03-27
FR2502399B1 (fr) 1986-01-31
DE3209666A1 (de) 1982-11-11
FR2502399A1 (fr) 1982-09-24

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