KR920006746A - 반도체용량식 가속도계 - Google Patents
반도체용량식 가속도계 Download PDFInfo
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- KR920006746A KR920006746A KR1019910015341A KR910015341A KR920006746A KR 920006746 A KR920006746 A KR 920006746A KR 1019910015341 A KR1019910015341 A KR 1019910015341A KR 910015341 A KR910015341 A KR 910015341A KR 920006746 A KR920006746 A KR 920006746A
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- capacitive accelerometer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
- G01P3/42—Devices characterised by the use of electric or magnetic means
- G01P3/44—Devices characterised by the use of electric or magnetic means for measuring angular speed
- G01P3/48—Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage
- G01P3/481—Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals
- G01P3/483—Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals delivered by variable capacitance detectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 반도체용량식 가속도계의 1실시예의 외관도, 제2도는 제1도에 표시한 실시예에서 사용되는 중부실리콘판의 평면도, 제3도는 제2도의 X -X선을 따라 취해진 제1도에 표시한 실시예의 단면도.
Claims (12)
- 중부실리콘판과, 상기 중부실리콘판내에 형성되고 그리고 그의 평면에 실질적으로 수직방향으로 이동되게 빔에 의해 지지되는 진자 질양을 구성하는 가동전극과, 상기 실리콘판내에 형성되고 제1의 다리에 의해 움직이지 않게 지지되는 제1도체부와, 상기 중부실리콘판에 접합되는 상부유리판, 소정의 개프로 상기 전극의 한면에 접하는 위치에서 상기 상부유리판상에 형성되는 제1의 고정전극과, 상기 중부실리콘판에 접합되는 하부유리판과, 소정의 개프로 상기 가동전극의 다른면에 접하는 위치에서 상기 하부유리판에 형성되는 제2의 고전전극을 포함하고 그리고 제1, 제2, 제2 패드는 상기 중부실리콘판의 외부에서 상기 하부유리판상에 배치되고, 상기 제1패드는 상기하부유리판과 상기 제1도 체부상에 형성되는 제1박막리드에 의해 상기 제1고정전극에 전기전극으로 접속되고, 상기 제2패드도 상기 하부유리판에 형성되는 제2박막리드에 의해 상기 가동전극에 전기적으로 접속되고, 그리고 상기 중부실리콘판과 상기 제3패드도 상기 하부유리판상에 형성되는 제3박막리드에 의해 상기 제2고정전극에 전기적으로 접속돼는 반도체 용량식 가속도계.
- 제1항에 있어서, 상기 제1의 다리는 열산화물과 실리콘나이트리드로 구성하는 그룹에서 선택되는 절연물에 의해 구성되는 반도체용량식 가속도계.
- 제1항에 있어서, 상기 중부실리콘판내에 형성되고 그리고 제2의 다리를 통하여 상기 중부실리콘판에 의해 움직이지 않게 지지되는 제2도체를 포함하는 반도체용량식 가속도계.
- 제3항에 있어서, 상기 중부실리콘판은 n형 도절율인 반도체용량식 가속도계.
- 제4항에 있어서, 상기 제1과 제2의 다리는 상기 중부실리콘판의 대응하는 부분에 불순물을 확산하는 것에의해 얻은 P++요소에 의해 구성되는 반도체용량식 가속도계.
- 제1항에 있어서, 상기 가동전극은 상기 제1과 제2고정전극에 각각 접하는 양면의 코너에 절연막을 가지는 반도체용량식 가속도계.
- 제1항에 있어서, 상기 중부실리콘판은 상기 제1과 제3박막리드에 각각 접하는 표면상에 절연막으로 피복되는 제1과 제2계열의 삼(3)각 형상의 돌기를 가지고 상기 계열의 3각형상의 돌기는 상기 중부 실리콘판과 상기 하부유리판의 접합동작시 상기 제1과 제3박막리드에 밀어넣어져서 상기 중부실리콘판과 상기 하부유리판사이가 밀폐되게 봉하고 동시에 그곳 사이를 전기적으로 분리하는 반도체용량식 가속도계.
- 제7항에 있어서, 상기 중부실리콘판은 n형도전율이고 상기 제2박막리드에 접하는 표면상에 n형영역을 가지는 반도체용량식 가속도계.
- 제1항에 있어서, 상기 중부실리콘판은 상기 제1과 상기 제3박막리드에 접하는 위치에 제1과 제2구멍을 가지고, 그리고 상기 제1과 제2구멍은 절연물에 의해 밀폐되어서 상기 중부실리콘판과 상기 하부유리판사이를 밀폐되게 봉하고 동시에 그곳사이를 전기적으로 분리하는 반도체용량식 가속도계.
- 제9항에 있어서, 상기 제1과 제2구멍은 스퍼터링과 CVD 방법중의 하나에 의해 밀폐되는 반도체용량식 가속도계.
- 제9항에 있어서, 상기 절연물은 저융점유리와 또는 실리콘고무로 구성하는 그룹에서 선택되는 반도체용량식 가속도계.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2-235539 | 1990-09-07 | ||
JP2235539A JP2786321B2 (ja) | 1990-09-07 | 1990-09-07 | 半導体容量式加速度センサ及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
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KR920006746A true KR920006746A (ko) | 1992-04-28 |
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ID=16987481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910015341A KR920006746A (ko) | 1990-09-07 | 1991-09-03 | 반도체용량식 가속도계 |
Country Status (3)
Country | Link |
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US (1) | US5243861A (ko) |
JP (1) | JP2786321B2 (ko) |
KR (1) | KR920006746A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100681115B1 (ko) * | 1999-11-24 | 2007-02-08 | 주식회사 케이티 | 통신시스템에서의 그래픽 화면 처리 속도 향상 방법 |
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CN102156203B (zh) | 2011-03-15 | 2013-07-24 | 迈尔森电子(天津)有限公司 | Mems惯性传感器及其形成方法 |
JP5854123B2 (ja) * | 2012-03-02 | 2016-02-09 | 富士通株式会社 | 水晶振動子及びその製造方法 |
US20160084870A1 (en) * | 2013-04-26 | 2016-03-24 | Panasonic Intellectual Property Management Co., Ltd. | Sensor |
JP6206650B2 (ja) | 2013-07-17 | 2017-10-04 | セイコーエプソン株式会社 | 機能素子、電子機器、および移動体 |
US9837935B2 (en) * | 2013-10-29 | 2017-12-05 | Honeywell International Inc. | All-silicon electrode capacitive transducer on a glass substrate |
CN104671189B (zh) * | 2015-02-17 | 2016-09-28 | 中国人民解放军国防科学技术大学 | 带有导通组件的微机械传感器及其加工方法 |
JP2017187447A (ja) * | 2016-04-08 | 2017-10-12 | アルプス電気株式会社 | センサ装置 |
CN106841683B (zh) * | 2017-04-06 | 2023-09-01 | 中国工程物理研究院电子工程研究所 | 石英摆式加速度计及其制备方法 |
JP6996459B2 (ja) | 2018-09-06 | 2022-01-17 | 三菱電機株式会社 | 物理量検出センサの製造方法、物理量検出センサ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CH642461A5 (fr) * | 1981-07-02 | 1984-04-13 | Centre Electron Horloger | Accelerometre. |
US4435737A (en) | 1981-12-16 | 1984-03-06 | Rockwell International Corporation | Low cost capacitive accelerometer |
FI81915C (fi) * | 1987-11-09 | 1990-12-10 | Vaisala Oy | Kapacitiv accelerationsgivare och foerfarande foer framstaellning daerav. |
JPH0623782B2 (ja) * | 1988-11-15 | 1994-03-30 | 株式会社日立製作所 | 静電容量式加速度センサ及び半導体圧力センサ |
US5085079A (en) * | 1990-06-11 | 1992-02-04 | Sundstrand Data Control, Inc. | Accelerometer with mounting/coupling structure for an electronics assembly |
-
1990
- 1990-09-07 JP JP2235539A patent/JP2786321B2/ja not_active Expired - Fee Related
-
1991
- 1991-09-03 KR KR1019910015341A patent/KR920006746A/ko not_active IP Right Cessation
- 1991-09-06 US US07/755,838 patent/US5243861A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100681115B1 (ko) * | 1999-11-24 | 2007-02-08 | 주식회사 케이티 | 통신시스템에서의 그래픽 화면 처리 속도 향상 방법 |
Also Published As
Publication number | Publication date |
---|---|
US5243861A (en) | 1993-09-14 |
JPH04116465A (ja) | 1992-04-16 |
JP2786321B2 (ja) | 1998-08-13 |
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