KR970063504A - 반도체 장치 제조 방법 및 제조 장치 - Google Patents

반도체 장치 제조 방법 및 제조 장치 Download PDF

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KR970063504A
KR970063504A KR1019970003533A KR19970003533A KR970063504A KR 970063504 A KR970063504 A KR 970063504A KR 1019970003533 A KR1019970003533 A KR 1019970003533A KR 19970003533 A KR19970003533 A KR 19970003533A KR 970063504 A KR970063504 A KR 970063504A
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semiconductor device
electrode
wiring
forming
polishing
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KR1019970003533A
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KR100484607B1 (ko
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순페이 야마자끼
사토시 테라모토
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순페이 야마자끼
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Weting (AREA)

Abstract

기판 상에 제1배선 또는 전극을 형성하고; 제1배선 또는 전극을 덮는 절연막을 형성하고; 이 절연막을 통하여 제1배선 또는 전극에 콘택홀을 형성하고; 이 콘택홀 내부에 제1배선 또는 전극을 접촉시키는 배선을 형성하고; 및 전해액에서 상기 콘택트 배선을 양극으로 사용하는 화학 기계 연마 수단으로 상기 콘택 배선의 돌출부를 제거함과 동시에 절연막을 평탄화시키는 단계를 포함하는, 다층 배선 구조를 가지는 반도체 장치를 제조하는 방법이 개시되어 있다. 반도체 장치를 제조하는 동안 반도체 장치의 표면을 기계적으로 연마하는 수단; 및 반도체 장치의 전극에 전류를 인가하는 수단을 포함하는, 반도체 장치를 제조하는 장치가 또한 개시되어 있다.

Description

반도체 장치 제조 방법 및 제조 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1(a)도 내지 제1(d)도는 본 발명의 구체예에 따른, 다층 배선을 가지는 반도체 장치를 제조하는 방법을 도식적으로 나타낸다.
제2도는 본 발명의 구체예에 따른, 반도체 장치를 연마하는 장치를 도식적으로 나타낸다.

Claims (7)

  1. 기판 상에 제1배선 또는 전극을 형성하는 단계; 상기 제1배선 또는 전극을 덮는 절연막을 형성하는 단계; 상기 절연막을 통하여 상기 제1배선 또는 전극에 콘택홀을 형성하는 단계; 상기 콘택홀 내부에 상기 제1배선 또는 전극을 접촉하기 위한 배선을 형성하는 단계; 및 전해액 내에서 상기 콘택 배선을 양극으로 사용하는 화학 기계적 연마 수단으로 상기 콘택 배선의 돌출부를 제거함과 동시에 상기 절연막을 평탄화하는 단계를 포함하는, 다층 배선을 가지는 반도체 장치 제조 방법.
  2. 제1항에 있어서, 상기 전해액의 전기 저항은 10-3내지 1010(cm)의 범위에 있는 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 화학 기계적 연마용으로 수 4,000 내지 10,000 범위에 있는 과립도를 가지는 전기적 비도전 입자를 사용하는 것을 특징으로 하는 방법.
  4. 제3항에 있어서 상기 전기적 비도전 입자는 다이아몬드 입자, 알루미나 입자, 탄소 입자 및 실리카 입자 중에서 선택한 것을 특징으로 하는 방법.
  5. 반도체 장치의 제조 중에 반도체 장치의 표면을 연마하는 방법에 있어서, 반도체 장치의 전극을 양극으로서 사용하여 전해 연마를 실시함과 동시에 화학 기계 연마를 실시하는 것을 포함하는 것을 특징으로 하는 방법.
  6. 반도체 장치의 제조 중에 반도체 장치의 표면을 기계적으로 연마하는 수단; 및 상기 반도체 장치의 전극에 전류를 인가하는 수단을 포함하는 반도체 장치 제조 장치.
  7. 반도체 장치 제조 중에 반도체 장치의 표면을 연마하는 장치에 있어서, 화학 기계 연마를 수행하는 수단; 및 상기 반도체 장치의 전극에 전류를 인가하는 수단을 포함하는 것을 특징으로 하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970003533A 1996-02-05 1997-02-05 반도체장치제조방법 KR100484607B1 (ko)

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JP04214996A JP4204649B2 (ja) 1996-02-05 1996-02-05 半導体装置の作製方法
JP96-42149 1996-02-05

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US6551934B2 (en) 2003-04-22
US6242343B1 (en) 2001-06-05
JPH09213803A (ja) 1997-08-15
JP4204649B2 (ja) 2009-01-07
US20010029098A1 (en) 2001-10-11
KR100484607B1 (ko) 2005-08-24

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