KR890004766B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR890004766B1
KR890004766B1 KR1019840007745A KR840007745A KR890004766B1 KR 890004766 B1 KR890004766 B1 KR 890004766B1 KR 1019840007745 A KR1019840007745 A KR 1019840007745A KR 840007745 A KR840007745 A KR 840007745A KR 890004766 B1 KR890004766 B1 KR 890004766B1
Authority
KR
South Korea
Prior art keywords
layer
semiconductor
capacitor
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840007745A
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English (en)
Korean (ko)
Other versions
KR850005733A (ko
Inventor
유끼마사 우치다
Original Assignee
가부시끼 가이샤 도오시바
사바 쇼오이찌
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Application filed by 가부시끼 가이샤 도오시바, 사바 쇼오이찌 filed Critical 가부시끼 가이샤 도오시바
Publication of KR850005733A publication Critical patent/KR850005733A/ko
Application granted granted Critical
Publication of KR890004766B1 publication Critical patent/KR890004766B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1019840007745A 1984-01-20 1984-12-07 반도체 기억장치 Expired KR890004766B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-7957 1984-01-20
JP59007957A JPS60152058A (ja) 1984-01-20 1984-01-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR850005733A KR850005733A (ko) 1985-08-28
KR890004766B1 true KR890004766B1 (ko) 1989-11-25

Family

ID=11679965

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007745A Expired KR890004766B1 (ko) 1984-01-20 1984-12-07 반도체 기억장치

Country Status (5)

Country Link
US (1) US4792834A (enExample)
EP (1) EP0149799B1 (enExample)
JP (1) JPS60152058A (enExample)
KR (1) KR890004766B1 (enExample)
DE (1) DE3470246D1 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
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US5237528A (en) * 1982-11-04 1993-08-17 Hitachi, Ltd. Semiconductor memory
JPS60152058A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体記憶装置
JPH0616549B2 (ja) * 1984-04-17 1994-03-02 三菱電機株式会社 半導体集積回路装置
JPS61179568A (ja) * 1984-12-29 1986-08-12 Fujitsu Ltd 半導体記憶装置の製造方法
KR930007522B1 (ko) * 1985-03-08 1993-08-12 가부시끼 가이샤 히다찌세이사꾸쇼 종형 커패시터를 사용한 반도체메모리
JPH0650765B2 (ja) * 1985-08-28 1994-06-29 日本電気株式会社 半導体装置の製造方法
US4801989A (en) * 1986-02-20 1989-01-31 Fujitsu Limited Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
JPH0685428B2 (ja) * 1986-03-14 1994-10-26 富士通株式会社 ダイナミツクランダムアクセスメモリ
DE3780840T2 (de) * 1986-03-03 1993-03-25 Fujitsu Ltd Einen rillenkondensator enthaltender dynamischer speicher mit wahlfreiem zugriff.
JPH0685426B2 (ja) * 1986-03-03 1994-10-26 富士通株式会社 ダイナミツクランダムアクセスメモリ
JPH0797622B2 (ja) * 1986-03-03 1995-10-18 富士通株式会社 半導体メモリ
JPS62259464A (ja) * 1986-05-02 1987-11-11 Toshiba Corp 半導体記憶装置の製造方法
JPH0691212B2 (ja) * 1986-10-07 1994-11-14 日本電気株式会社 半導体メモリ
JPH0797625B2 (ja) * 1986-11-19 1995-10-18 三菱電機株式会社 半導体記憶装置
GB2199696B (en) * 1987-01-06 1990-11-14 Samsung Semiconductor Inc Submerged storage plate memory cell
US4761385A (en) * 1987-02-10 1988-08-02 Motorola, Inc. Forming a trench capacitor
JPS63208263A (ja) * 1987-02-25 1988-08-29 Toshiba Corp 半導体装置
JP2681887B2 (ja) * 1987-03-06 1997-11-26 シ−メンス、アクチエンゲゼルシヤフト ３次元１トランジスタメモリセル構造とその製法
EP0283964B1 (en) * 1987-03-20 1994-09-28 Nec Corporation Dynamic random access memory device having a plurality of improved one-transistor type memory cells
JPS63237460A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体装置
JPS63255960A (ja) * 1987-04-14 1988-10-24 Toshiba Corp キヤパシタ
EP0298251B1 (de) * 1987-07-10 1994-08-17 Siemens Aktiengesellschaft Hochintegrierbare Speicherzelle und Verfahren zu ihrer Herstellung
JPH01146354A (ja) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp 半導体記憶装置
JPH06105773B2 (ja) * 1987-12-22 1994-12-21 株式会社東芝 半導体装置
KR910000246B1 (ko) * 1988-02-15 1991-01-23 삼성전자 주식회사 반도체 메모리장치
JPH01223760A (ja) * 1988-03-03 1989-09-06 Toshiba Corp 半導体記憶装置
US4896293A (en) * 1988-06-09 1990-01-23 Texas Instruments Incorporated Dynamic ram cell with isolated trench capacitors
US4958318A (en) * 1988-07-08 1990-09-18 Eliyahou Harari Sidewall capacitor DRAM cell
US5200354A (en) * 1988-07-22 1993-04-06 Hyundai Electronics Industries Co. Ltd. Method for manufacturing dynamic random access memory cell
JPH0656865B2 (ja) * 1988-10-13 1994-07-27 株式会社東芝 高耐圧素子用接着基板
US5170372A (en) * 1990-08-16 1992-12-08 Texas Instruments Incorporated Memory device having bit lines over a field oxide
JP2819520B2 (ja) * 1991-05-07 1998-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｄｒａｍセル
US5363327A (en) * 1993-01-19 1994-11-08 International Business Machines Corporation Buried-sidewall-strap two transistor one capacitor trench cell
JP3480745B2 (ja) * 1993-09-16 2003-12-22 株式会社東芝 半導体装置の製造方法
US5908310A (en) * 1995-12-27 1999-06-01 International Business Machines Corporation Method to form a buried implanted plate for DRAM trench storage capacitors
US5914510A (en) * 1996-12-13 1999-06-22 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same
US5998821A (en) * 1997-05-21 1999-12-07 Kabushiki Kaisha Toshiba Dynamic ram structure having a trench capacitor
US5981332A (en) * 1997-09-30 1999-11-09 Siemens Aktiengesellschaft Reduced parasitic leakage in semiconductor devices
JP3580719B2 (ja) * 1999-03-03 2004-10-27 株式会社東芝 半導体記憶装置及びその製造方法
JP3808700B2 (ja) * 2000-12-06 2006-08-16 株式会社東芝 半導体装置及びその製造方法
FR2819632B1 (fr) 2001-01-12 2003-09-26 St Microelectronics Sa Circuit integre comportant un dispositif analogique de stockage de charges, et procede de fabrication
US6620701B2 (en) * 2001-10-12 2003-09-16 Infineon Technologies Ag Method of fabricating a metal-insulator-metal (MIM) capacitor
FR2849962B1 (fr) * 2003-01-13 2005-09-30 St Microelectronics Sa Condensateur enterre associe a une cellule sram
DE102004003084B3 (de) * 2004-01-21 2005-10-06 Infineon Technologies Ag Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren
WO2005113592A2 (en) * 2004-05-19 2005-12-01 Maxygen, Inc. Interferon-alpha polypeptides and conjugates
US7468307B2 (en) * 2005-06-29 2008-12-23 Infineon Technologies Ag Semiconductor structure and method
DE102006029682B4 (de) * 2005-06-29 2015-01-08 Infineon Technologies Ag Halbleiterstruktur und Verfahren zur Herstellung der Struktur
US7488647B1 (en) * 2005-08-11 2009-02-10 National Semiconductor Corporation System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device
US7982284B2 (en) 2006-06-28 2011-07-19 Infineon Technologies Ag Semiconductor component including an isolation structure and a contact to the substrate
JP5443676B2 (ja) * 2007-08-17 2014-03-19 スパンション エルエルシー 半導体装置及びその製造方法
US20090302421A1 (en) * 2008-06-09 2009-12-10 Altera Corporation Method and apparatus for creating a deep trench capacitor to improve device performance
US9608130B2 (en) 2011-12-27 2017-03-28 Maxim Integrated Products, Inc. Semiconductor device having trench capacitor structure integrated therein
US9196672B2 (en) * 2012-01-06 2015-11-24 Maxim Integrated Products, Inc. Semiconductor device having capacitor integrated therein

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116720A (en) * 1977-12-27 1978-09-26 Burroughs Corporation Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance
JPS5847862B2 (ja) * 1979-08-30 1983-10-25 富士通株式会社 半導体記憶装置及びその製造方法
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
US4364074A (en) * 1980-06-12 1982-12-14 International Business Machines Corporation V-MOS Device with self-aligned multiple electrodes
JPS583260A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタ
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
JPS5982761A (ja) * 1982-11-04 1984-05-12 Hitachi Ltd 半導体メモリ
JPS60152058A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
KR850005733A (ko) 1985-08-28
JPS60152058A (ja) 1985-08-10
US4792834A (en) 1988-12-20
DE3470246D1 (en) 1988-05-05
EP0149799B1 (en) 1988-03-30
EP0149799A2 (en) 1985-07-31
JPH0531308B2 (enExample) 1993-05-12
EP0149799A3 (en) 1985-08-14

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