KR880014641A - Ic카드 및 그 제조방법 - Google Patents

Ic카드 및 그 제조방법 Download PDF

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KR880014641A
KR880014641A KR870004878A KR870004878A KR880014641A KR 880014641 A KR880014641 A KR 880014641A KR 870004878 A KR870004878 A KR 870004878A KR 870004878 A KR870004878 A KR 870004878A KR 880014641 A KR880014641 A KR 880014641A
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마사유키 오우치
히로시 오다이라
겐이치 요시다
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와타리 스기이치로
가부시키가이샤 도시바
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Abstract

내용 없음

Description

IC카드 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 구현예인 IC카드의 주요부분을 나타낸 단면도, 제2a도∼제2e도는 본 발명에 따른 IC카드를 제조하는 공정을 단계적으로 나타낸 단면도이다.

Claims (11)

  1. 절연성 코어시이트(1)와 이 코어시이트(1)내에 매설되며 전극(4)을 구비하고 있는 반도체 IC칩(3) 및 상기 전극(4)과 접속되도록 코어시이트(1)상에 증착되는 도전층패턴(6)을 구비하고 있는 IC카드에 있어서, 상기한 반도체 IC칩(3)에는 전극(4)위에 형성되는 도전성 돌기물(5)이 설치되고, 상기한 도전성 돌기물(5)의 노출표면이 도전층패턴(3)을 증착시키게 되는 코어시이트(1)의 주표면과 같은 높이로 됨과 더불어 상기 도전층패턴(6)이 상기 노출표면에서 도전성 돌기물(5)과 접속되는 형태로 반도체 IC칩(3)이 코어시이트(1)의 내부에 매설되는 것을 특징으로 하는 IC카드.
  2. 반도체IC칩(3)의 두께보다 더 두꺼우며 열가소성 수지로 이루어진 코어시이트(1)를 준비해서 그 코어시이트(1)를 관통하는 최소한 한 개 이상의 관통구멍(2)을 뚫는 단계와, 상기 반도체칩(3)상에 증착되는 전극(4)의 위에다가 도전성 돌기물(5)을 형성시키는 단계, 상기 코어시이트(1) 주표면의 측면쪽에 위치하게 되는 도전성 돌기물(5)이 형성되어 있는 상기 반도체 IC칩(3)을 관통구멍(2)내에 끼우는 단계, 상기 코어시이트(1)의 주표면과 도전성 돌기물(5)의 머릿부분이 같은 높이로 되도록 반도체 IC칩(3)을 내장하고 있는 코어시이트(1)의 주표면과 도전성 돌기물(5)의 머릿부분이 같은 높이로 되도록 반도체 IC칩(3)을 내장하고 있는 코어시이트(1)의 주표면과 그 반대면 사이에 가열가압처리를 실시해서 코어시이트(1)를 소성변형시키는 단계 및, 코어시이트(1)의 주표면상에 도전층패턴(6)을 증착시켜서 상기 도전성 돌기물(5)의 노출표면과 접촉시키는 단계로 이루어져 있는 IC카드의 제조방법.
  3. 제2항에 있어서, 도전성 돌기물(5)은 IC칩(3)의 구성재료 보다도 경도가 낮은 재질로 이루어진 것을 특징으로 하는 IC카드의 제조방법.
  4. 제3항에 있어서 도전성 돌기물(5)은 Au,Cu,Ag,Al,Zn,Pd,Sn,Os,Pt,Ir로부터 선택한 최소한 한가지 이상의 금속으로 만들어진 것을 특징으로 하는 IC카드의 제조방법.
  5. 제3항에 있어서, 도전성 돌기물(5)은 Pd,Sn,In,Ag,Ga,Au,Bi,Te,Ge,Sb로부터 선택한 최소한 2종류이상의 금속을 포함하는 합금으로 이루어진 것을 특징으로 하는 IC카드의 제조방법.
  6. 제3항에 있어서, 도전성 돌기물(5)은 금속과 수지의 복합재료로 만들어진 것을 특징으로 하는 IC카드의 제조방법.
  7. 제2항에 있어서, 도전성 돌기물(5)은 볼 본딩이나, 전기도금법, 진공증착법, 스퍼터링법,이온도금법, 레이저성장법, 전사법, 디핑법, 디스펜싱법중 어떠한 방법에 의해 형성되는 것을 특징으로 하는 IC카드의 제조방법.
  8. 제2항에 있어서, 도전성 돌기물(5)은 반도체 IC칩(3)의 표면으로부터 도전성 돌기물(5)의 머릿부분까지의 거리가 열가소성 코어시이트(1)의 두께에서 반도체 IC칩(3)의 두께를 뺀 칫수와 같거나 그 이상이 되게끔 형성되는 것을 특징으로 하는 IC카드의 제조방법.
  9. 제2항에 있어서, 열가소성 코어시이트(1)는 폴리카보네이트수지나 염화비닐수지, 염화비닐-초산비닐공중합체수지, 폴리슬폰수지, 폴리에틸렌테레프탈레이트수지, 폴리에텔케톤수지, 폴리메틸펜텔수지, 폴리알리레이트수지, 폴리에텔슬폰수지, 폴리에델이미드수지, 폴리페닐설파이드수지, ABS수지중에서 선택한 수지로 만들어지는 것을 특징으로 하는 IC카드의 제조방법.
  10. 제2항에 있어서, 도전층패턴(6)은 수지에다 Au,Ag,Cu,Pt,Ni,Sn,W,Mo,Pd,SiC,RuO2등의 금속중에서 선택한 금속분말이나 합금분말 혹은 금속산화물 분말을 혼합하여서 된 도전성 페이스트를 사용하는 인쇄법에 의해 형성되는 것을 특징으로 하는 IC카드의 제조방법.
  11. 제2항에 있어서, 도전층패턴(6)은 Au,Ag,Cu,Pt,Ni,Sn,W,Mo,Pd중의 한가지 금속을 진공증착법이나 스퍼터링법 또는 무전해 전기도금법으로 코어시이트(1)의 표면상에 형성시킨 후 포토리소그라피법에 따라 소정의 형태로 패터닝하여 만들어진 것을 특징으로 하는 IC카드의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870004878A 1986-05-20 1987-05-18 Ic카드 및 그 제조방법 KR900003803B1 (ko)

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Application Number Priority Date Filing Date Title
JP61115585A JPH074995B2 (ja) 1986-05-20 1986-05-20 Ｉｃカ−ド及びその製造方法
JP115585 1986-05-20
JP61-115585 1986-05-20

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KR880014641A true KR880014641A (ko) 1988-12-24
KR900003803B1 KR900003803B1 (ko) 1990-05-31

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EP0246744A2 (en) 1987-11-25
KR900003803B1 (ko) 1990-05-31
JPH074995B2 (ja) 1995-01-25
JPS62270393A (ja) 1987-11-24
US4931853A (en) 1990-06-05
EP0246744B1 (en) 1992-12-09
US4997791A (en) 1991-03-05
EP0246744A3 (en) 1989-06-14
DE3782972T2 (de) 1993-04-29
DE3782972D1 (de) 1993-01-21

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