KR20180126088A - 계측 방법, 스테이지 장치, 및 노광 장치 - Google Patents

계측 방법, 스테이지 장치, 및 노광 장치 Download PDF

Info

Publication number
KR20180126088A
KR20180126088A KR1020187033093A KR20187033093A KR20180126088A KR 20180126088 A KR20180126088 A KR 20180126088A KR 1020187033093 A KR1020187033093 A KR 1020187033093A KR 20187033093 A KR20187033093 A KR 20187033093A KR 20180126088 A KR20180126088 A KR 20180126088A
Authority
KR
South Korea
Prior art keywords
measurement
stage
liquid
optical system
projection optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020187033093A
Other languages
English (en)
Korean (ko)
Inventor
다이 아라이
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20180126088A publication Critical patent/KR20180126088A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
KR1020187033093A 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치 Ceased KR20180126088A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007187649 2007-07-18
JPJP-P-2007-187649 2007-07-18
PCT/JP2008/062802 WO2009011356A1 (ja) 2007-07-18 2008-07-16 計測方法、ステージ装置、及び露光装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020187007270A Division KR101923356B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치

Publications (1)

Publication Number Publication Date
KR20180126088A true KR20180126088A (ko) 2018-11-26

Family

ID=40259688

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020137018085A Expired - Fee Related KR101538245B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020177003435A Expired - Fee Related KR101843699B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020137018086A Expired - Fee Related KR101538246B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020187007270A Expired - Fee Related KR101923356B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020187033093A Ceased KR20180126088A (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020107003290A Expired - Fee Related KR101488048B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020157029261A Expired - Fee Related KR101706884B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020157001127A Expired - Fee Related KR101614666B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치

Family Applications Before (4)

Application Number Title Priority Date Filing Date
KR1020137018085A Expired - Fee Related KR101538245B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020177003435A Expired - Fee Related KR101843699B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020137018086A Expired - Fee Related KR101538246B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020187007270A Expired - Fee Related KR101923356B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020107003290A Expired - Fee Related KR101488048B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020157029261A Expired - Fee Related KR101706884B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치
KR1020157001127A Expired - Fee Related KR101614666B1 (ko) 2007-07-18 2008-07-16 계측 방법, 스테이지 장치, 및 노광 장치

Country Status (9)

Country Link
US (5) US9316917B2 (enExample)
EP (7) EP3447582A1 (enExample)
JP (8) JPWO2009011356A1 (enExample)
KR (8) KR101538245B1 (enExample)
CN (7) CN105487351A (enExample)
HK (2) HK1201943A1 (enExample)
SG (3) SG183050A1 (enExample)
TW (7) TWI497218B (enExample)
WO (1) WO2009011356A1 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009026862A (ja) * 2007-07-18 2009-02-05 Canon Inc 光学素子位置決めシステム、投影光学系及び露光装置
KR101538245B1 (ko) * 2007-07-18 2015-07-20 가부시키가이샤 니콘 계측 방법, 스테이지 장치, 및 노광 장치
JP2009036637A (ja) * 2007-08-01 2009-02-19 Sony Corp 変位測定装置
US8760629B2 (en) * 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8493547B2 (en) * 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP2299472B1 (de) * 2009-09-22 2020-07-08 EV Group E. Thallner GmbH Vorrichtung zum Ausrichten zweier Substrate
NL2006913A (en) 2010-07-16 2012-01-17 Asml Netherlands Bv Lithographic apparatus and method.
NL2007155A (en) * 2010-08-25 2012-02-28 Asml Netherlands Bv Stage apparatus, lithographic apparatus and method of positioning an object table.
JP4846051B1 (ja) * 2010-11-05 2011-12-28 株式会社ナナオ センサユニット作動機構及び当該センサユニット作動機構を備えた液晶表示装置
NL2008272A (en) * 2011-03-09 2012-09-11 Asml Netherlands Bv Lithographic apparatus.
DE102011005885A1 (de) * 2011-03-22 2012-09-27 Carl Zeiss Smt Gmbh Lithographievorrichtung
NL2008980A (en) 2011-07-11 2013-01-14 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
WO2013070965A1 (en) * 2011-11-09 2013-05-16 Zygo Corporation Thermally stable optical sensor mount
WO2013100061A1 (ja) * 2011-12-28 2013-07-04 株式会社ニコン エンコーダ、エンコーダ用スケールの製造方法、エンコーダの製造方法及び駆動装置
JP6093965B2 (ja) 2012-02-17 2017-03-15 株式会社ミツトヨ 光電式エンコーダ
JP6251559B2 (ja) * 2013-02-28 2017-12-20 株式会社ニューフレアテクノロジー 試料支持装置
CN105593644B (zh) * 2013-10-02 2018-11-13 株式会社尼康 编码器用标尺、编码器、驱动装置及载台装置
DE112014005893B4 (de) * 2013-12-21 2023-02-16 Kla-Tencor Corporation Ein Verfahren zum Messen von Positionen von Strukturen auf einer Maske und dadurch Bestimmen von Fehlern bei der Herstellung von Masken
JP2016043453A (ja) * 2014-08-25 2016-04-04 株式会社ディスコ 加工装置
NL2015639A (en) 2014-11-28 2016-09-20 Asml Netherlands Bv Encoder, position measurement system and lithographic apparatus.
CN111610696A (zh) 2015-02-23 2020-09-01 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
TWI693477B (zh) 2015-02-23 2020-05-11 日商尼康股份有限公司 測量裝置、微影系統及曝光裝置、以及元件製造方法
KR102691584B1 (ko) 2015-02-23 2024-08-05 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 관리 방법, 중첩 계측 방법 및 디바이스 제조 방법
US10191393B2 (en) 2015-03-23 2019-01-29 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
CN113204177A (zh) * 2015-03-31 2021-08-03 株式会社尼康 曝光装置、平板显示器的制造方法、器件制造方法及曝光方法
US9617142B1 (en) 2015-09-30 2017-04-11 Mems Drive, Inc. MEMS grid for manipulating structural parameters of MEMS devices
US9630836B2 (en) 2015-09-30 2017-04-25 Mems Drive, Inc. Simplified MEMS device fabrication process
HK1248834A1 (zh) 2015-09-30 2018-10-19 株式会社尼康 移动体装置、曝光装置、平面显示器的制造方法、及元件制造方法、以及物体的移动方法
US10199912B2 (en) * 2016-01-26 2019-02-05 Woodward Hrt, Inc. Torque motor with mechanical flexures establishing armature-to-field gaps
US10782619B2 (en) * 2016-09-30 2020-09-22 Nikon Corporation Movable body apparatus, moving method, exposure apparatus, exposure method, flat-panel display manufacturing method, and device manufacturing method
US10866531B2 (en) 2016-10-04 2020-12-15 Asml Netherlands B.V. Athermalization of an alignment system
US11106145B2 (en) * 2016-10-17 2021-08-31 Nikon Corporation Exposure system and lithography system
JP6883655B2 (ja) * 2017-02-03 2021-06-09 エーエスエムエル ネザーランズ ビー．ブイ． 露光装置
US10866529B2 (en) * 2017-02-10 2020-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10600614B2 (en) * 2017-09-29 2020-03-24 Hitachi High-Technologies Corporation Stage device and charged particle beam device
DE102017217967A1 (de) * 2017-10-09 2019-04-11 Sieb & Meyer Ag Verfahren zur Bestimmung von Positionsfehlern von Bohrungen und Sicherung des Bohrprozesses
JP6493481B2 (ja) * 2017-10-18 2019-04-03 株式会社ニコン 露光装置及びデバイス製造方法
CN108010873B (zh) * 2017-12-29 2024-04-19 无锡固电半导体股份有限公司 一种晶圆自动扩晶机
TWI699559B (zh) * 2018-01-16 2020-07-21 美商伊路米納有限公司 結構照明成像系統和使用結構化光來創建高解析度圖像的方法
JP7051455B2 (ja) * 2018-01-16 2022-04-11 キオクシア株式会社 パターン形成装置および半導体装置の製造方法
US10281268B1 (en) 2018-04-20 2019-05-07 Seagate Technology Llc Automated and accurate high-throughput slider-level flatness inspection
JP7056411B2 (ja) * 2018-06-29 2022-04-19 株式会社リコー 読取装置および造形装置
US20210194202A1 (en) * 2018-09-12 2021-06-24 Cymer, Llc Metrology for a body of a gas discharge stage
CN111380464B (zh) * 2018-12-28 2021-05-07 上海微电子装备（集团）股份有限公司 一种光栅尺的安装装置、安装方法、光栅测量系统及光刻机
JP2020112605A (ja) * 2019-01-08 2020-07-27 キヤノン株式会社 露光装置およびその制御方法、および、物品製造方法
DE102019205271A1 (de) * 2019-04-11 2020-10-15 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
US11450552B2 (en) 2019-08-01 2022-09-20 Micron Technology, Inc. Methods and apparatus for adjusting surface topography of a substrate support apparatus
CN110931412B (zh) * 2019-10-15 2024-02-06 北京烁科中科信电子装备有限公司 一种高精度高效率的硅片定向装置
CN111272089B (zh) * 2020-03-03 2022-06-28 中国科学院光电技术研究所 一种原位间隙检测装置与检测方法
CN111550955A (zh) * 2020-04-29 2020-08-18 合肥芯碁微电子装备股份有限公司 温度监控系统
KR102826407B1 (ko) * 2020-07-17 2025-06-27 도쿄엘렉트론가부시키가이샤 접합 장치, 접합 시스템 및 접합 방법
JP7565179B2 (ja) * 2020-09-14 2024-10-10 株式会社ミツトヨ スケール
US11244474B1 (en) * 2020-10-01 2022-02-08 Kla Corporation Sample positioning system and method
JP7562232B2 (ja) * 2020-10-30 2024-10-07 株式会社ディスコ ノッチ検出方法
CN114351247B (zh) * 2022-01-12 2023-06-27 苏州天准科技股份有限公司 一种拉晶晃动监测方法、存储介质、终端和拉晶设备
CN120212822B (zh) * 2025-05-28 2025-08-19 山西富兴通重型环锻件有限公司 一种法兰盘孔位检测装置

Family Cites Families (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPH04211202A (ja) 1990-03-19 1992-08-03 Canon Inc 反射型回折格子および該回折格子を用いた装置
DE4033556A1 (de) * 1990-10-22 1992-04-23 Suess Kg Karl Messanordnung fuer x,y,(phi)-koordinatentische
JPH05129184A (ja) * 1991-10-30 1993-05-25 Canon Inc 投影露光装置
US5469260A (en) * 1992-04-01 1995-11-21 Nikon Corporation Stage-position measuring apparatus
JP3089802B2 (ja) 1992-04-01 2000-09-18 株式会社ニコン ステージの位置計測装置、投影露光装置及び投影露光方法
JP2629109B2 (ja) 1992-04-08 1997-07-09 新日本製鐵株式会社 廃棄物溶融炉装入装置における切出し装置
JP3316833B2 (ja) 1993-03-26 2002-08-19 株式会社ニコン 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3375076B2 (ja) 1993-04-27 2003-02-10 株式会社ニコン 投影露光方法及び装置、並びに素子製造方法
US6753948B2 (en) 1993-04-27 2004-06-22 Nikon Corporation Scanning exposure method and apparatus
JPH07270122A (ja) * 1994-03-30 1995-10-20 Canon Inc 変位検出装置、該変位検出装置を備えた露光装置およびデバイスの製造方法
JPH07335529A (ja) * 1994-06-09 1995-12-22 Nikon Corp 投影露光装置
US6018384A (en) 1994-09-07 2000-01-25 Nikon Corporation Projection exposure system
JP3379238B2 (ja) 1994-09-08 2003-02-24 株式会社ニコン 走査型露光装置
US5552888A (en) 1994-12-02 1996-09-03 Nikon Precision, Inc. Apparatus for measuring position of an X-Y stage
JP3387075B2 (ja) * 1994-12-12 2003-03-17 株式会社ニコン 走査露光方法、露光装置、及び走査型露光装置
JPH08178694A (ja) * 1994-12-27 1996-07-12 Canon Inc 変位センサ用のスケール
US5877843A (en) 1995-09-12 1999-03-02 Nikon Corporation Exposure apparatus
US5806193A (en) * 1995-11-09 1998-09-15 Nikon Corporation Tilt and movement apparatus using flexure and air cylinder
US6069416A (en) * 1996-06-24 2000-05-30 Anorad Corporation Two-axis motor platen and method for making
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH11274029A (ja) * 1998-03-19 1999-10-08 Asahi Kasei Micro Syst Co Ltd スキャニングステッパー
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP3554186B2 (ja) * 1998-04-08 2004-08-18 キヤノン株式会社 露光装置、デバイス製造方法および反力受け方法
JP3413122B2 (ja) * 1998-05-21 2003-06-03 キヤノン株式会社 位置決め装置及びこれを用いた露光装置並びにデバイス製造方法
JP3302926B2 (ja) * 1998-07-02 2002-07-15 株式会社東芝 露光装置の検査方法
US6496528B2 (en) * 1999-09-03 2002-12-17 Cymer, Inc. Line narrowing unit with flexural grating mount
JP2001102279A (ja) 1999-09-27 2001-04-13 Nikon Corp ステージ装置および露光装置
JP2001126977A (ja) 1999-10-27 2001-05-11 Nikon Corp ステージ装置および露光装置ならびに回路デバイス製造方法
CN2421670Y (zh) * 1999-11-30 2001-02-28 中国科学院光电技术研究所 亚微米光刻机光学预对准装置
US6480008B2 (en) * 1999-12-03 2002-11-12 Mitutoyo Corporation Capacitive distance sensor for surface configuration determining apparatus
JP3406889B2 (ja) 1999-12-03 2003-05-19 株式会社ミツトヨ 距離測定装置
JP2001313250A (ja) 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
SG124257A1 (en) 2000-02-25 2006-08-30 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US7561270B2 (en) * 2000-08-24 2009-07-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US6958808B2 (en) 2000-11-16 2005-10-25 Nikon Corporation System and method for resetting a reaction mass assembly of a stage assembly
JP3762307B2 (ja) * 2001-02-15 2006-04-05 キヤノン株式会社 レーザ干渉干渉計システムを含む露光装置
US6564752B2 (en) 2001-07-06 2003-05-20 Wallace H. Jerome Poultry coop unloader, and methods
US6801301B2 (en) * 2001-10-12 2004-10-05 Canon Kabushiki Kaisha Exposure apparatus
JP3890233B2 (ja) * 2002-01-07 2007-03-07 キヤノン株式会社 位置決めステージ装置、露光装置及び半導体デバイスの製造方法
TW594445B (en) * 2002-02-06 2004-06-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
WO2004053956A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及び露光方法、デバイス製造方法
CN101424883B (zh) * 2002-12-10 2013-05-15 株式会社尼康 曝光设备和器件制造法
TW586139B (en) 2003-03-17 2004-05-01 Taiwan Semiconductor Mfg Dynamic flow pattern controller for uniformity control and the method thereof
US6757113B1 (en) * 2003-03-18 2004-06-29 Lucent Technologies Inc. Optical grating mount
JP4665759B2 (ja) * 2003-06-06 2011-04-06 株式会社ニコン 光学素子保持装置、鏡筒、露光装置、及びデバイスの製造方法
JP4164414B2 (ja) * 2003-06-19 2008-10-15 キヤノン株式会社 ステージ装置
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
KR20060026883A (ko) * 2003-07-09 2006-03-24 가부시키가이샤 니콘 결합장치, 노광장치 및 디바이스 제조방법
JP2005234359A (ja) 2004-02-20 2005-09-02 Ricoh Co Ltd 走査光学系光学特性測定装置、走査光学系光学特性測定装置校正方法、走査光学系及び画像形成装置
KR20180042456A (ko) * 2004-03-25 2018-04-25 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US20070247640A1 (en) * 2004-03-30 2007-10-25 Nikon Corporation Exposure Apparatus, Exposure Method and Device Manufacturing Method, and Surface Shape Detection Unit
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101162128B1 (ko) 2004-06-09 2012-07-03 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7256871B2 (en) * 2004-07-27 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and method for calibrating the same
EP1796146B1 (en) * 2004-09-17 2013-01-16 Nikon Corporation Exposure apparatus, exposure method, and method for manufacturing device
CN101052916B (zh) 2004-09-30 2010-05-12 株式会社尼康 投影光学设备和曝光装置
US20090213357A1 (en) * 2004-10-08 2009-08-27 Dai Arai Exposure apparatus and device manufacturing method
TWI553703B (zh) * 2004-11-18 2016-10-11 尼康股份有限公司 A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method
JP2006269940A (ja) 2005-03-25 2006-10-05 Canon Inc 露光装置及び露光方法
US20090047607A1 (en) * 2005-03-31 2009-02-19 Hiroyuki Nagasaka Exposure method, exposure apparatus and device fabricating methods
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4410216B2 (ja) 2005-05-24 2010-02-03 エーエスエムエル ネザーランズ ビー．ブイ． ２ステージ・リソグラフィ装置及びデバイス製造方法
JP4868113B2 (ja) * 2005-06-27 2012-02-01 株式会社ニコン 支持装置、ステージ装置及び露光装置
JP2007019225A (ja) * 2005-07-07 2007-01-25 Nikon Corp 位置計測装置の反射部材構造及びステージ装置並びに露光装置
US7348574B2 (en) * 2005-09-02 2008-03-25 Asml Netherlands, B.V. Position measurement system and lithographic apparatus
KR100869306B1 (ko) * 2005-09-13 2008-11-18 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
US7362446B2 (en) * 2005-09-15 2008-04-22 Asml Netherlands B.V. Position measurement unit, measurement system and lithographic apparatus comprising such position measurement unit
JP2007115758A (ja) * 2005-10-18 2007-05-10 Nikon Corp 露光方法及び露光装置
JP2007113939A (ja) * 2005-10-18 2007-05-10 Nikon Corp 計測装置及び計測方法、ステージ装置、並びに露光装置及び露光方法
JP2007123332A (ja) * 2005-10-25 2007-05-17 Nikon Corp ステージ装置、露光装置、デバイスの製造方法
JP4800901B2 (ja) 2005-12-12 2011-10-26 矢崎総業株式会社 電圧検出装置及び絶縁インタフェース
JP4715505B2 (ja) 2005-12-26 2011-07-06 株式会社ニコン 露光装置及びデバイス製造方法
WO2007077925A1 (ja) * 2005-12-28 2007-07-12 Nikon Corporation パターン形成方法及びパターン形成装置、並びにデバイス製造方法
EP1975980A4 (en) * 2005-12-28 2010-08-04 Nikon Corp EXPOSURE DEVICE AND MANUFACTURING METHOD THEREFOR
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
KR101486086B1 (ko) * 2006-05-10 2015-01-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US20080158531A1 (en) * 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7903866B2 (en) * 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object
US7804579B2 (en) * 2007-06-21 2010-09-28 Asml Netherlands B.V. Control system, lithographic projection apparatus, method of controlling a support structure, and a computer program product
KR101538245B1 (ko) * 2007-07-18 2015-07-20 가부시키가이샤 니콘 계측 방법, 스테이지 장치, 및 노광 장치
DE102007046927A1 (de) 2007-09-28 2009-04-02 Carl Zeiss Smt Ag Kalibrierung einer Positionsmesseinrichtung einer optischen Einrichtung

Also Published As

Publication number Publication date
JP5787001B2 (ja) 2015-09-30
KR20170018111A (ko) 2017-02-15
US20180011410A1 (en) 2018-01-11
US9372410B2 (en) 2016-06-21
CN104111587B (zh) 2017-01-11
SG10201502625RA (en) 2015-05-28
EP2818926A2 (en) 2014-12-31
TW200912557A (en) 2009-03-16
JP6555334B2 (ja) 2019-08-07
KR20130088196A (ko) 2013-08-07
EP3246755A1 (en) 2017-11-22
JP2014195093A (ja) 2014-10-09
EP2177867B1 (en) 2016-04-20
EP3246755B1 (en) 2018-12-12
CN105652603A (zh) 2016-06-08
HK1204093A1 (en) 2015-11-06
KR101706884B1 (ko) 2017-02-14
CN105301918A (zh) 2016-02-03
EP3056945B1 (en) 2017-08-23
HK1201944A1 (zh) 2015-09-11
TWI610148B (zh) 2018-01-01
KR101923356B1 (ko) 2018-11-28
KR20130088195A (ko) 2013-08-07
JP2018063446A (ja) 2018-04-19
HK1201943A1 (en) 2015-09-11
CN104111588B (zh) 2016-08-03
HK1201945A1 (en) 2015-09-11
TW201723679A (zh) 2017-07-01
KR101488048B1 (ko) 2015-01-29
TW201346459A (zh) 2013-11-16
JPWO2009011356A1 (ja) 2010-09-24
TWI497234B (zh) 2015-08-21
TWI641924B (zh) 2018-11-21
US9804506B2 (en) 2017-10-31
KR20150024894A (ko) 2015-03-09
EP2177867A4 (en) 2015-03-18
EP2933683B1 (en) 2016-08-24
EP2818926A3 (en) 2015-03-11
JP2015119187A (ja) 2015-06-25
JP2012181196A (ja) 2012-09-20
EP3056945A1 (en) 2016-08-17
TW201843537A (zh) 2018-12-16
CN105652603B (zh) 2018-07-27
JP2016014881A (ja) 2016-01-28
EP2818927A2 (en) 2014-12-31
JP5655893B2 (ja) 2015-01-21
KR101843699B1 (ko) 2018-03-29
TW201535073A (zh) 2015-09-16
EP2933683A1 (en) 2015-10-21
KR101614666B1 (ko) 2016-04-21
JP5655809B2 (ja) 2015-01-21
KR20150121256A (ko) 2015-10-28
JP2016136268A (ja) 2016-07-28
HK1204094A1 (en) 2015-11-06
CN104111587A (zh) 2014-10-22
JP6274235B2 (ja) 2018-02-07
TWI497218B (zh) 2015-08-21
US20130308109A1 (en) 2013-11-21
KR101538246B1 (ko) 2015-07-20
KR101538245B1 (ko) 2015-07-20
US20160209764A1 (en) 2016-07-21
TWI498683B (zh) 2015-09-01
WO2009011356A1 (ja) 2009-01-22
EP3447582A1 (en) 2019-02-27
HK1143632A1 (en) 2011-01-07
KR20100059799A (ko) 2010-06-04
CN104111589A (zh) 2014-10-22
HK1220514A1 (zh) 2017-05-05
EP2818927A3 (en) 2015-03-11
HK1214002A1 (en) 2016-07-15
CN105487351A (zh) 2016-04-13
HK1222716A1 (zh) 2017-07-07
TW201809912A (zh) 2018-03-16
EP2818926B1 (en) 2016-04-27
TWI579655B (zh) 2017-04-21
EP2818927B1 (en) 2016-04-27
CN104111588A (zh) 2014-10-22
JP5900666B2 (ja) 2016-04-06
CN105301918B (zh) 2018-02-16
US9316917B2 (en) 2016-04-19
TW201346458A (zh) 2013-11-16
SG175598A1 (en) 2011-11-28
SG183050A1 (en) 2012-08-30
KR20180030261A (ko) 2018-03-21
US20130308108A1 (en) 2013-11-21
EP2177867A1 (en) 2010-04-21
US20090231561A1 (en) 2009-09-17
JP2013219377A (ja) 2013-10-24
HK1220515A1 (zh) 2017-05-05
JP6128172B2 (ja) 2017-05-17
CN101755188A (zh) 2010-06-23

Similar Documents

Publication Publication Date Title
KR101923356B1 (ko) 계측 방법, 스테이지 장치, 및 노광 장치
HK1222716B (en) Exposure apparatus, exposure method and device manufacturing method
HK1201945B (en) Measurement method, stage apparatus, and exposure apparatus
HK1143202A (en) Measurement method, stage apparatus, and exposure apparatus
HK1220514B (en) Exposure appratatus, exposure method and device manufacuring method
HK1201944B (en) Measurement method, stage apparatus, and exposure apparatus

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20181115

Application number text: 1020187007270

Filing date: 20180313

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20190121

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20190326

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20190121

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I