KR20170046194A - 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품 - Google Patents

기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품 Download PDF

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KR20170046194A
KR20170046194A KR1020177010764A KR20177010764A KR20170046194A KR 20170046194 A KR20170046194 A KR 20170046194A KR 1020177010764 A KR1020177010764 A KR 1020177010764A KR 20177010764 A KR20177010764 A KR 20177010764A KR 20170046194 A KR20170046194 A KR 20170046194A
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South Korea
Prior art keywords
substrate
layer
coating
structured coating
coated
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KR1020177010764A
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English (en)
Korean (ko)
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위르겐 라이프
울리 한젠
지몬 마우스
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엠에스지 리쏘글라스 게엠베하
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Publication of KR20170046194A publication Critical patent/KR20170046194A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24174—Structurally defined web or sheet [e.g., overall dimension, etc.] including sheet or component perpendicular to plane of web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Integrated Circuits (AREA)
KR1020177010764A 2009-07-23 2010-07-22 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품 KR20170046194A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009034532A DE102009034532A1 (de) 2009-07-23 2009-07-23 Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat
DE102009034532.9 2009-07-23
PCT/DE2010/000856 WO2011009444A1 (fr) 2009-07-23 2010-07-22 Procédé de fabrication d'un revêtement structuré sur un substrat, substrat revêtu et ébauche présentant un substrat revêtu

Related Parent Applications (1)

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KR1020127004655A Division KR20120038518A (ko) 2009-07-23 2010-07-22 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품

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KR1020187018907A Division KR102081732B1 (ko) 2009-07-23 2010-07-22 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품

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KR20170046194A true KR20170046194A (ko) 2017-04-28

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KR1020177010764A KR20170046194A (ko) 2009-07-23 2010-07-22 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품
KR1020187018907A KR102081732B1 (ko) 2009-07-23 2010-07-22 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품
KR1020127004655A KR20120038518A (ko) 2009-07-23 2010-07-22 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품

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KR1020187018907A KR102081732B1 (ko) 2009-07-23 2010-07-22 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품
KR1020127004655A KR20120038518A (ko) 2009-07-23 2010-07-22 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품

Country Status (8)

Country Link
US (1) US10954591B2 (fr)
EP (1) EP2456904B1 (fr)
JP (2) JP2012533686A (fr)
KR (3) KR20170046194A (fr)
CN (2) CN102471867A (fr)
DE (1) DE102009034532A1 (fr)
TW (1) TWI526560B (fr)
WO (1) WO2011009444A1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009034532A1 (de) * 2009-07-23 2011-02-03 Msg Lithoglas Ag Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat
CN102881779A (zh) * 2011-07-15 2013-01-16 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
JP6153235B2 (ja) * 2012-09-21 2017-06-28 アップル インコーポレイテッド サファイア上での撥油性コーティング
US9718249B2 (en) 2012-11-16 2017-08-01 Apple Inc. Laminated aluminum oxide cover component
US20140272345A1 (en) * 2013-03-15 2014-09-18 Rubicon Technology, Inc. Method of growing aluminum oxide onto substrates by use of an aluminum source in an environment containing partial pressure of oxygen to create transparent, scratch-resistant windows
DE102013004558B4 (de) 2013-03-18 2018-04-05 Apple Inc. Verfahren zur Herstellung einer oberflächenverspannten Saphirscheibe, oberflächenverspannte Saphirscheibe und elektrisches Gerät mit einer transparenten Abdeckung
US20150029681A1 (en) 2013-07-29 2015-01-29 Evonik Industries Ag Flexible composite, production thereof and use thereof
CN106103370B (zh) 2014-03-21 2020-05-01 康宁股份有限公司 具有图案化涂层的制品
JP6357252B2 (ja) * 2014-06-13 2018-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 均一性の改善及びエッジの長寿命化のための平坦なエッジの設計
CN104557039B (zh) * 2014-12-24 2017-04-19 福建阿石创新材料股份有限公司 中折射率蒸发镀膜材料及其制备工艺和应用
DE102015226197A1 (de) * 2015-12-21 2017-06-22 Robert Bosch Gmbh Verfahren zur Herstellung eines Strömungssensors auf Dünnfilmbasis sowie ein solcher Strömungssensor
EP3666922A4 (fr) * 2017-08-10 2021-05-05 Toyobo Co., Ltd. Procédé de fabrication de film barrière au gaz
CN110499508B (zh) * 2018-05-18 2021-11-12 比亚迪股份有限公司 金属制品及其制备方法和应用
KR102370558B1 (ko) * 2018-07-12 2022-03-08 한국기계연구원 나노 또는 마이크로 구조물이 형성된 마스터를 제작하는 방법
EP3608728B1 (fr) 2018-08-08 2022-02-16 Nivarox-FAR S.A. Spiral thermocompensé coloré et son procédé de fabrication
CN109852937A (zh) * 2019-03-21 2019-06-07 池州市正彩电子科技有限公司 一种提高材料表面硬度的方法
DE102019113054A1 (de) * 2019-05-17 2020-11-19 HELLA GmbH & Co. KGaA Verfahren zur Herstellung eines Blendenarrays für ein Mikrolinsenarray
US11269374B2 (en) 2019-09-11 2022-03-08 Apple Inc. Electronic device with a cover assembly having an adhesion layer

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
JPS5299837A (en) 1976-02-16 1977-08-22 Mitsubishi Electric Corp Preparation of strong dielectric guide for light integrated circuit
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4764244A (en) * 1985-06-11 1988-08-16 The Foxboro Company Resonant sensor and method of making same
JP2730893B2 (ja) * 1987-06-24 1998-03-25 三菱電機株式会社 回折格子製造方法
JPS6468470A (en) * 1987-09-09 1989-03-14 Ulvac Seimaku Plasma electron beam heating source
US4935797A (en) * 1988-10-31 1990-06-19 International Business Machines Corporation Heterojunction bipolar transistors
US5125946A (en) 1990-12-10 1992-06-30 Corning Incorporated Manufacturing method for planar optical waveguides
US5150436A (en) * 1991-09-06 1992-09-22 The University Of British Columbia Slow-wave electrode structure
JPH0583063A (ja) 1991-09-25 1993-04-02 Matsushita Electric Ind Co Ltd 超音波遅延線の製造方法
US5820770A (en) 1992-07-21 1998-10-13 Seagate Technology, Inc. Thin film magnetic head including vias formed in alumina layer and process for making the same
JPH0677578A (ja) 1992-08-28 1994-03-18 Hitachi Cable Ltd 光増幅器及びその製造方法
DE4235199C1 (fr) * 1992-10-19 1993-04-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
KR0138006B1 (ko) * 1992-10-26 1998-06-15 모리시타 요이찌 광도파로 및 그 제조방법
DE4236264C1 (fr) * 1992-10-27 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De
JPH0799368A (ja) * 1993-09-29 1995-04-11 Mitsubishi Electric Corp 光半導体装置
JPH07245306A (ja) * 1994-01-17 1995-09-19 Sony Corp 半導体装置における膜平坦化方法
US5846649A (en) * 1994-03-03 1998-12-08 Monsanto Company Highly durable and abrasion-resistant dielectric coatings for lenses
JPH08225398A (ja) 1995-02-23 1996-09-03 Sumitomo Electric Ind Ltd 水晶型結晶構造を有する酸化物薄膜及びその製造方法
DE4430363A1 (de) 1994-08-26 1996-02-29 Leybold Ag Optische Linse aus einem klarsichtigen Kunststoff
KR960023231A (ko) * 1994-12-08 1996-07-18 구자홍 도전성 범프(Bump)의 인 엘로이(In Alloy) 코팅 방법
JP3301249B2 (ja) 1995-01-26 2002-07-15 株式会社ニコン 反射用光学素子及びその製造方法
JPH08220304A (ja) 1995-02-13 1996-08-30 Tadahiro Omi 光学物品及びそれを用いた露光装置又は光学系並びにその製造方法
JPH0946156A (ja) 1995-07-31 1997-02-14 Kinseki Ltd 弾性表面波素子およびその製造方法
EP0784543B1 (fr) * 1995-08-04 2000-04-26 International Business Machines Corporation Surface lithographique ou modification de couche mince
WO1997006012A1 (fr) * 1995-08-04 1997-02-20 International Business Machines Corporation Tampon lithographique
US6261696B1 (en) * 1996-03-22 2001-07-17 Canon Kabushika Kaisha Optical element with substrate containing fluorite as main ingredient, and method and apparatus for producing the optical element
JP3466865B2 (ja) 1996-03-22 2003-11-17 キヤノン株式会社 光学部品及びその製造方法並びに製造装置
JPH1056350A (ja) 1996-08-07 1998-02-24 Toyo Commun Equip Co Ltd 圧電素子基板とその製造方法
JPH1180935A (ja) 1997-09-04 1999-03-26 Toyo Commun Equip Co Ltd 蒸着材料
CH693076A5 (de) * 1998-02-20 2003-02-14 Unaxis Trading Ag Verfahren zur Herstellung einer Farbfilterschichtsystem-Struktur auf einer Unterlage.
JP2000199827A (ja) 1998-10-27 2000-07-18 Sony Corp 光導波装置およびその製造方法
JP2001014649A (ja) 1999-06-28 2001-01-19 Hitachi Ltd 板状体、無機化合物基板、磁気記録媒体及び磁気記憶装置
JP3571641B2 (ja) * 1999-11-15 2004-09-29 松下電器産業株式会社 窒化物半導体素子
JP2001271157A (ja) 2000-03-27 2001-10-02 Hitachi Kokusai Electric Inc 蒸着装置
DE10027931C1 (de) * 2000-05-31 2002-01-10 Infineon Technologies Ag Verfahren zur rückseitigen elektrischen Kontaktierung eines Halbleitersubstrats während seiner Bearbeitung
BR0114432B1 (pt) * 2000-10-09 2011-04-05 processo para produção de uma folha metalizada, e, folha metalizada.
JP4103421B2 (ja) 2001-03-28 2008-06-18 セイコーエプソン株式会社 電子デバイス及び電子機器
WO2002082644A1 (fr) 2001-03-30 2002-10-17 Mitsubishi Denki Kabushiki Kaisha Dispositif d'onde acoustique et procede de fabrication correspondant
US6946238B2 (en) * 2001-06-29 2005-09-20 3M Innovative Properties Company Process for fabrication of optical waveguides
ATE393839T1 (de) * 2002-04-15 2008-05-15 Schott Ag Verfahren zur gehäusebildung bei elektronischen bauteilen so wie so hermetisch verkapselte elektronische bauteile
AU2003227626A1 (en) * 2002-04-15 2003-10-27 Schott Ag Method for connecting substrates and composite element
DE10222609B4 (de) * 2002-04-15 2008-07-10 Schott Ag Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat
US7067241B2 (en) * 2002-05-08 2006-06-27 Unaxis Balzers Aktiengesellschaft Method for producing a unit having a three-dimensional surface patterning, and use of this method
CN1656612A (zh) * 2002-05-23 2005-08-17 肖特股份公司 用于高频的玻璃材料
CA2484794A1 (fr) * 2002-05-23 2003-12-04 Schott Ag Materiau vitreux pour applications hautes frequences
US8021778B2 (en) * 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
SG121844A1 (en) * 2002-12-20 2006-05-26 Asml Netherlands Bv Device manufacturing method
JP2004218047A (ja) * 2003-01-17 2004-08-05 Canon Inc 光学素子の製造方法
JP2005130341A (ja) 2003-10-27 2005-05-19 Murata Mfg Co Ltd 圧電部品及びその製造方法、通信装置
US7253113B2 (en) * 2003-11-13 2007-08-07 Macronix International Co., Ltd. Methods for using a silylation technique to reduce cell pitch in semiconductor devices
USRE42955E1 (en) * 2003-12-04 2011-11-22 Bae Systems Information And Electronic Systems Integration Inc. GaN-based permeable base transistor and method of fabrication
EP1722473A4 (fr) 2004-03-05 2008-07-30 Murata Manufacturing Co Dispositif d'onde acoustique limite
JP2008516263A (ja) 2004-06-09 2008-05-15 ショット アクチエンゲゼルシャフト 構造化されたガラスコーティングによる回折光学素子の形成
DE102004034418B4 (de) 2004-07-15 2009-06-25 Schott Ag Verfahren zur Herstellung struktuierter optischer Filterschichten auf Substraten
JP4694172B2 (ja) * 2004-10-22 2011-06-08 株式会社神戸製鋼所 ダイヤモンド半導体素子及びその製造方法
JP2006227432A (ja) * 2005-02-18 2006-08-31 Nisca Corp 光学フィルタの製造方法及びこれを用いた光学フィルタ並びに光量調整装置
JP4609757B2 (ja) 2005-02-23 2011-01-12 三井造船株式会社 成膜装置における基板装着方法
JP4455381B2 (ja) * 2005-03-28 2010-04-21 住友電工デバイス・イノベーション株式会社 半導体装置およびその製造方法、容量素子およびその製造方法、並びにｍｉｓ型半導体装置およびその製造方法。
JP2006279609A (ja) 2005-03-29 2006-10-12 Fujitsu Media Device Kk 弾性境界波素子、共振子およびラダー型フィルタ
JP4570152B2 (ja) 2005-06-01 2010-10-27 国立大学法人電気通信大学 透明導電性成形物及びその製造方法
US20070020451A1 (en) 2005-07-20 2007-01-25 3M Innovative Properties Company Moisture barrier coatings
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
DE102005044522B4 (de) * 2005-09-16 2010-02-11 Schott Ag Verfahren zum Aufbringen einer porösen Glasschicht, sowie Verbundmaterial und dessen Verwendung
EP1974423A4 (fr) 2006-01-20 2010-06-09 Massachusetts Inst Technology Laser à fibre à émission par la surface
JP2007335468A (ja) 2006-06-12 2007-12-27 Hitachi Media Electoronics Co Ltd 中空封止素子およびその製造方法
US7622364B2 (en) * 2006-08-18 2009-11-24 International Business Machines Corporation Bond pad for wafer and package for CMOS imager
US7465681B2 (en) * 2006-08-25 2008-12-16 Corning Incorporated Method for producing smooth, dense optical films
CN101506705B (zh) * 2006-09-21 2011-07-06 日立化成工业株式会社 光波导基片及使用其的光电混载电路安装基片
JP4892730B2 (ja) 2006-12-16 2012-03-07 国立大学法人大阪大学 プラズマディスプレイパネルおよびその製造方法
WO2008146340A1 (fr) * 2007-05-25 2008-12-04 Fujitsu Limited Tête magnétique à couche mince et son procédé de fabrication
JP2009051055A (ja) * 2007-08-24 2009-03-12 Fujitsu Component Ltd 装飾筐体及びその製造方法
DE102008034372B4 (de) * 2008-07-23 2013-04-18 Msg Lithoglas Ag Verfahren zum Herstellen einer dielektrischen Schicht in einem elektroakustischen Bauelement sowie elektroakustisches Bauelement
JP5099376B2 (ja) 2009-03-04 2012-12-19 豊田合成株式会社 発光装置の製造方法
DE102009034532A1 (de) * 2009-07-23 2011-02-03 Msg Lithoglas Ag Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat

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KR20120038518A (ko) 2012-04-23
CN102471867A (zh) 2012-05-23
JP6515058B2 (ja) 2019-05-15
JP2012533686A (ja) 2012-12-27
TWI526560B (zh) 2016-03-21
TW201111527A (en) 2011-04-01
KR102081732B1 (ko) 2020-02-26
WO2011009444A1 (fr) 2011-01-27
EP2456904A1 (fr) 2012-05-30
EP2456904B1 (fr) 2021-01-06
DE102009034532A1 (de) 2011-02-03
JP2016166425A (ja) 2016-09-15
KR20180078356A (ko) 2018-07-09
US20120231212A1 (en) 2012-09-13
CN106435485B (zh) 2020-04-21
CN106435485A (zh) 2017-02-22

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