KR20150114982A - Ｅｓｄ 자기­보호 기능을 구비한 ｄｍｏｓ 반도체 디바이스 및 그 기능부를 포함하는 ｌｉｎ 버스 드라이버 - Google Patents

Ｅｓｄ 자기­보호 기능을 구비한 ｄｍｏｓ 반도체 디바이스 및 그 기능부를 포함하는 ｌｉｎ 버스 드라이버 Download PDF

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KR20150114982A
KR20150114982A KR1020157023604A KR20157023604A KR20150114982A KR 20150114982 A KR20150114982 A KR 20150114982A KR 1020157023604 A KR1020157023604 A KR 1020157023604A KR 20157023604 A KR20157023604 A KR 20157023604A KR 20150114982 A KR20150114982 A KR 20150114982A
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South Korea
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diffusion
well
gate
source
esd
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Korean (ko)
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필리페 데발
마리자 페르난데즈
패트릭 베썩스
로한 브레이스웨이트
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마이크로칩 테크놀로지 인코포레이티드
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Publication of KR20150114982A publication Critical patent/KR20150114982A/ko
Ceased legal-status Critical Current

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    • H01L27/0266—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H01L27/1203—
    • H01L29/7393—
    • H01L29/7436—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020157023604A 2013-01-30 2014-01-29 Ｅｓｄ 자기­보호 기능을 구비한 ｄｍｏｓ 반도체 디바이스 및 그 기능부를 포함하는 ｌｉｎ 버스 드라이버 Ceased KR20150114982A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361758590P 2013-01-30 2013-01-30
US61/758,590 2013-01-30
PCT/US2014/013671 WO2014120824A1 (en) 2013-01-30 2014-01-29 Dmos semiconductor device with esd self-protection and lin bus driver comprising the same

Publications (1)

Publication Number Publication Date
KR20150114982A true KR20150114982A (ko) 2015-10-13

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KR1020157023604A Ceased KR20150114982A (ko) 2013-01-30 2014-01-29 Ｅｓｄ 자기­보호 기능을 구비한 ｄｍｏｓ 반도체 디바이스 및 그 기능부를 포함하는 ｌｉｎ 버스 드라이버

Country Status (7)

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US (1) US9607978B2 (https=)
EP (1) EP2951865B1 (https=)
JP (1) JP6255421B2 (https=)
KR (1) KR20150114982A (https=)
CN (1) CN104969355B (https=)
TW (1) TWI614871B (https=)
WO (1) WO2014120824A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180033886A (ko) * 2016-09-26 2018-04-04 페어차일드코리아반도체 주식회사 정전기 방전 회로 및 그 제조 방법
WO2019005081A1 (en) * 2017-06-29 2019-01-03 Intel Corporation GROUP III NITRIDE TRANSISTOR STRUCTURE WITH INTEGRATED DIODE
US11373995B2 (en) 2017-09-29 2022-06-28 Intel Corporation Group III-nitride antenna diode
KR20220157838A (ko) * 2021-05-21 2022-11-29 삼성전자주식회사 반도체 보호 소자
US11545586B2 (en) 2017-09-29 2023-01-03 Intel Corporation Group III-nitride Schottky diode

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6063677B2 (ja) * 2012-09-06 2017-01-18 ローム株式会社 信号検出回路及びイグナイタ
DE102015204924B4 (de) * 2015-03-18 2022-05-25 Röchling Automotive SE & Co. KG LIN-Netzwerk
US9831340B2 (en) * 2016-02-05 2017-11-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and associated fabricating method
US10498326B2 (en) * 2016-03-01 2019-12-03 Texas Instruments Incorporated Output driver with power down protection
JP6740831B2 (ja) * 2016-09-14 2020-08-19 富士電機株式会社 半導体装置
US9613948B1 (en) * 2016-09-22 2017-04-04 United Microelectronics Corp. Electrostatic discharge protection semiconductor device
US10600776B2 (en) * 2017-02-24 2020-03-24 Nxp B.V. Device and method for electrostatic discharge (ESD) protection
US10861844B2 (en) * 2017-08-07 2020-12-08 Texas Instruments Incorporated ESD device with fast response and high transient current
US10453836B2 (en) * 2017-08-17 2019-10-22 Globalfoundries Singapore Pte. Ltd. High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the same
TWI777971B (zh) 2017-08-28 2022-09-21 聯華電子股份有限公司 雙極性電晶體及其製作方法
US10340266B2 (en) * 2017-10-02 2019-07-02 Globalfoundries Singapore Pte. Ltd. ESD protection circuit and method of making the same
HK1244177A2 (zh) * 2018-03-27 2018-07-27 蒙若贤 用於沟道型dmos的集成堆叠在沟道中的防静电网络
CN109742071B (zh) * 2019-01-07 2021-04-13 中国科学院微电子研究所 一种soi功率开关的esd保护器件
CN109786374B (zh) * 2019-01-07 2021-07-13 中国科学院微电子研究所 一种soi功率开关的esd保护器件
KR102633136B1 (ko) 2019-01-10 2024-02-02 삼성전자주식회사 집적회로 칩과 이를 포함하는 집적회로 패키지 및 디스플레이 장치
CN109962098A (zh) * 2019-02-25 2019-07-02 中国科学院微电子研究所 双向可控硅静电放电保护结构及soi结构
CN109935581B (zh) * 2019-02-25 2021-04-13 中国科学院微电子研究所 双向可控硅静电放电保护结构及soi结构
CN109935582B (zh) * 2019-02-25 2021-04-06 中国科学院微电子研究所 双向可控硅静电放电保护结构及soi结构
JP7268408B2 (ja) 2019-03-06 2023-05-08 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体装置及びその製造方法
CN110289257B (zh) * 2019-06-28 2021-09-14 湖南师范大学 一种双向增强型栅控可控硅静电保护器件及其制作方法
KR102887191B1 (ko) 2020-04-16 2025-11-17 삼성디스플레이 주식회사 표시 장치
CN111384046A (zh) * 2020-04-27 2020-07-07 上海华力微电子有限公司 一种硅控整流器及其制造方法
US10938387B1 (en) 2020-06-24 2021-03-02 Cypress Semiconductor Corporation Local interconnect network (LIN) driver circuit
CN113345964B (zh) * 2021-05-17 2022-05-10 杰华特微电子股份有限公司 一种横向双扩散晶体管
TWI775688B (zh) * 2021-11-29 2022-08-21 世界先進積體電路股份有限公司 靜電放電防護結構
US12057444B2 (en) 2022-06-23 2024-08-06 Globalfoundries U.S. Inc. Operating voltage-triggered semiconductor controlled rectifier
US12610592B2 (en) * 2022-11-17 2026-04-21 Globalfoundries U.S. Inc. Structure with buried doped region and methods to form same
US20240332283A1 (en) * 2023-03-28 2024-10-03 Infineon Technologies Ag ESD Protection Device

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51156742U (https=) * 1975-06-09 1976-12-14
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
HUT42204A (en) * 1984-05-02 1987-06-29 Int Standard Electric Corp Semiconductor device and arrangement
US4947226A (en) * 1987-12-08 1990-08-07 Hoenywell, Inc. Bilateral switching device
JPH06334131A (ja) * 1993-05-27 1994-12-02 Hitachi Ltd 半導体集積回路装置
US6639277B2 (en) * 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6144070A (en) * 1997-08-29 2000-11-07 Texas Instruments Incorporated High breakdown-voltage transistor with electrostatic discharge protection
JP4206543B2 (ja) * 1999-02-02 2009-01-14 株式会社デンソー 半導体装置
JP2000323976A (ja) * 1999-05-10 2000-11-24 Sharp Corp 出力バッファ回路
US6365932B1 (en) * 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
JP4357127B2 (ja) * 2000-03-03 2009-11-04 株式会社東芝 半導体装置
JP4231612B2 (ja) * 2000-04-26 2009-03-04 株式会社ルネサステクノロジ 半導体集積回路
JP4471480B2 (ja) * 2000-10-18 2010-06-02 三菱電機株式会社 半導体装置
US20020076876A1 (en) * 2000-12-15 2002-06-20 Ming-Dou Ker Method for manufacturing semiconductor devices having ESD protection
JP2002198438A (ja) * 2000-12-26 2002-07-12 Toshiba Corp パワーｍｏｓトランジスタ
US6498357B2 (en) * 2001-02-09 2002-12-24 United Microelectronics Corp. Lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process
US6465308B1 (en) * 2001-05-24 2002-10-15 Taiwan Semiconductor Manufacturing Company Tunable threshold voltage of a thick field oxide ESD protection device with a N-field implant
JP3824310B2 (ja) * 2002-01-18 2006-09-20 ローム株式会社 二重拡散型ｍｏｓｆｅｔおよびこれを用いた半導体装置
JP2006507678A (ja) * 2002-11-25 2006-03-02 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 接続端子のｅｓｄ保護のための方法及び回路構成体
TWI263311B (en) * 2003-12-22 2006-10-01 Vanguard Int Semiconduct Corp High-voltage device structure having high endurance capability of ESD
US8890248B2 (en) * 2004-08-26 2014-11-18 Texas Instruments Incorporation Bi-directional ESD protection circuit
US7446990B2 (en) * 2005-02-11 2008-11-04 Freescale Semiconductor, Inc. I/O cell ESD system
JP4864344B2 (ja) * 2005-05-16 2012-02-01 パナソニック株式会社 半導体装置
KR100628250B1 (ko) * 2005-09-28 2006-09-27 동부일렉트로닉스 주식회사 전력용 반도체 소자 및 그의 제조방법
US7402846B2 (en) * 2005-10-20 2008-07-22 Atmel Corporation Electrostatic discharge (ESD) protection structure and a circuit using the same
JP5108250B2 (ja) * 2006-04-24 2012-12-26 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP4616856B2 (ja) * 2007-03-27 2011-01-19 株式会社日立製作所 半導体装置、及び半導体装置の製造方法
US7719026B2 (en) * 2007-04-11 2010-05-18 Fairchild Semiconductor Corporation Un-assisted, low-trigger and high-holding voltage SCR
US7843002B2 (en) * 2007-07-03 2010-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Fully isolated high-voltage MOS device
TW200905860A (en) * 2007-07-31 2009-02-01 Amazing Microelectroing Corp Symmetric type bi-directional silicon control rectifier
US8018000B2 (en) * 2008-01-11 2011-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge protection pattern for high voltage applications
JP5515248B2 (ja) * 2008-03-26 2014-06-11 富士電機株式会社 半導体装置
US8283727B1 (en) * 2008-05-02 2012-10-09 Cypress Semiconductor Corporation Circuit with electrostatic discharge protection
JP2010010264A (ja) * 2008-06-25 2010-01-14 Denso Corp 半導体装置
JP5172654B2 (ja) * 2008-12-27 2013-03-27 株式会社東芝 半導体装置
JP5460279B2 (ja) * 2009-12-11 2014-04-02 株式会社日立製作所 半導体装置およびその製造方法
CN101826523B (zh) * 2010-04-14 2012-04-25 电子科技大学 一种栅控二极管触发的可控硅整流式静电释放保护电路结构
US8519434B2 (en) * 2011-03-22 2013-08-27 Macronix International Co., Ltd. Self detection device for high voltage ESD protection
EP2735026B1 (en) * 2011-07-21 2020-04-01 Microchip Technology Incorporated Multi-channel homogenous path for enhanced mutual triggering of electrostatic discharge fingers
US8848325B2 (en) * 2012-02-21 2014-09-30 Macronix International Co., Ltd. High voltage semiconductor element and operating method thereof
US9559170B2 (en) * 2012-03-01 2017-01-31 X-Fab Semiconductor Foundries Ag Electrostatic discharge protection devices
US9293460B2 (en) * 2012-08-24 2016-03-22 Texas Instruments Incorporated ESD protection device with improved bipolar gain using cutout in the body well
US9620495B2 (en) * 2012-09-12 2017-04-11 Nxp Usa, Inc. Semiconductor device and an integrated circuit comprising an ESD protection device, ESD protection devices and a method of manufacturing the semiconductor device
US8963253B2 (en) * 2012-10-23 2015-02-24 Macronix International Co., Ltd. Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection
US8664690B1 (en) * 2012-11-15 2014-03-04 Macronix International Co., Ltd. Bi-directional triode thyristor for high voltage electrostatic discharge protection

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180033886A (ko) * 2016-09-26 2018-04-04 페어차일드코리아반도체 주식회사 정전기 방전 회로 및 그 제조 방법
WO2019005081A1 (en) * 2017-06-29 2019-01-03 Intel Corporation GROUP III NITRIDE TRANSISTOR STRUCTURE WITH INTEGRATED DIODE
US11373995B2 (en) 2017-09-29 2022-06-28 Intel Corporation Group III-nitride antenna diode
US11545586B2 (en) 2017-09-29 2023-01-03 Intel Corporation Group III-nitride Schottky diode
KR20220157838A (ko) * 2021-05-21 2022-11-29 삼성전자주식회사 반도체 보호 소자

Also Published As

Publication number Publication date
US20140210007A1 (en) 2014-07-31
EP2951865B1 (en) 2020-03-25
EP2951865A1 (en) 2015-12-09
TWI614871B (zh) 2018-02-11
JP6255421B2 (ja) 2017-12-27
TW201444051A (zh) 2014-11-16
CN104969355A (zh) 2015-10-07
US9607978B2 (en) 2017-03-28
CN104969355B (zh) 2018-02-13
JP2016508671A (ja) 2016-03-22
WO2014120824A1 (en) 2014-08-07

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