KR20150063581A - 태양전지의 제조 방법 - Google Patents

태양전지의 제조 방법 Download PDF

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Publication number
KR20150063581A
KR20150063581A KR1020157012833A KR20157012833A KR20150063581A KR 20150063581 A KR20150063581 A KR 20150063581A KR 1020157012833 A KR1020157012833 A KR 1020157012833A KR 20157012833 A KR20157012833 A KR 20157012833A KR 20150063581 A KR20150063581 A KR 20150063581A
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KR
South Korea
Prior art keywords
fluorine
etching
argon
wafer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020157012833A
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English (en)
Korean (ko)
Inventor
마르첼로 리바
Original Assignee
솔베이 플루오르 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 솔베이 플루오르 게엠베하 filed Critical 솔베이 플루오르 게엠베하
Publication of KR20150063581A publication Critical patent/KR20150063581A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H01L31/02366—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L31/04—
    • H01L31/18—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H10F71/1375—Apparatus for automatic interconnection of photovoltaic cells in a module
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020157012833A 2008-01-23 2008-04-28 태양전지의 제조 방법 Ceased KR20150063581A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US2295808P 2008-01-23 2008-01-23
US61/022,958 2008-01-23
PCT/EP2008/055173 WO2009092453A2 (en) 2008-01-23 2008-04-28 Process for the manufacture of solar cells

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020107018533A Division KR20100113588A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187008071A Division KR20180033600A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법

Publications (1)

Publication Number Publication Date
KR20150063581A true KR20150063581A (ko) 2015-06-09

Family

ID=40786668

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020157012833A Ceased KR20150063581A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법
KR1020187008071A Abandoned KR20180033600A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법
KR1020107018533A Ceased KR20100113588A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020187008071A Abandoned KR20180033600A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법
KR1020107018533A Ceased KR20100113588A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법

Country Status (13)

Country Link
US (1) US10453986B2 (enExample)
EP (1) EP2235757B1 (enExample)
JP (4) JP2011510501A (enExample)
KR (3) KR20150063581A (enExample)
CN (2) CN105789378A (enExample)
AU (1) AU2008348838A1 (enExample)
BR (1) BRPI0822196A2 (enExample)
IL (1) IL206859A (enExample)
MX (1) MX2010008075A (enExample)
RU (1) RU2476959C2 (enExample)
TW (1) TWI595675B (enExample)
WO (1) WO2009092453A2 (enExample)
ZA (1) ZA201005208B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10481053B2 (en) 2016-11-17 2019-11-19 Samsung Display Co., Ltd. Method for detecting defects of glass substrates

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CN102640301A (zh) 2009-12-07 2012-08-15 应用材料公司 在掺杂区上方清洁和形成带负电荷的钝化层的方法
JP2013524510A (ja) * 2010-03-30 2013-06-17 アプライド マテリアルズ インコーポレイテッド ｐ型拡散層の上に負荷電パッシベーション層を形成する方法
JP2013539717A (ja) 2010-09-15 2013-10-28 ソルヴェイ（ソシエテ アノニム） ガスからのｆ２および／またはｏｆ２の除去方法
TWI586842B (zh) 2010-09-15 2017-06-11 首威公司 氟之製造工廠及使用彼之方法
WO2013024041A1 (en) 2011-08-17 2013-02-21 Solvay Sa Electrolytic process for the manufacture of fluorine and an apparatus therefor
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EP3104418B8 (de) 2015-06-08 2018-04-04 Meyer Burger (Germany) GmbH Verfahren und vorrichtung zum texturieren einer siliziumoberfläche
CN108550613B (zh) * 2018-05-30 2020-12-18 信利光电股份有限公司 一种显示模组
JP7256685B2 (ja) * 2019-05-16 2023-04-12 株式会社ディスコ 研削装置
DE102021200627A1 (de) * 2021-01-25 2022-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Solarzelle
CN115148850B (zh) * 2022-06-27 2023-06-02 晶科能源股份有限公司 一种硅片及其制备方法、钝化处理溶液

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10481053B2 (en) 2016-11-17 2019-11-19 Samsung Display Co., Ltd. Method for detecting defects of glass substrates

Also Published As

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JP2018152615A (ja) 2018-09-27
TW201003935A (en) 2010-01-16
CN101926010A (zh) 2010-12-22
EP2235757A2 (en) 2010-10-06
RU2476959C2 (ru) 2013-02-27
MX2010008075A (es) 2010-08-04
WO2009092453A3 (en) 2009-12-10
IL206859A0 (en) 2010-12-30
TWI595675B (zh) 2017-08-11
JP2015057858A (ja) 2015-03-26
BRPI0822196A2 (pt) 2015-06-23
KR20180033600A (ko) 2018-04-03
US20100288330A1 (en) 2010-11-18
JP2017017331A (ja) 2017-01-19
CN105789378A (zh) 2016-07-20
AU2008348838A1 (en) 2009-07-30
US10453986B2 (en) 2019-10-22
ZA201005208B (en) 2012-01-25
KR20100113588A (ko) 2010-10-21
EP2235757B1 (en) 2016-06-08
WO2009092453A2 (en) 2009-07-30
JP2011510501A (ja) 2011-03-31
RU2010134889A (ru) 2012-02-27
JP6546889B2 (ja) 2019-07-17
IL206859A (en) 2016-12-29

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