MX2010008075A - Proceso para la fabricacion de celulas solares. - Google Patents
Proceso para la fabricacion de celulas solares.Info
- Publication number
- MX2010008075A MX2010008075A MX2010008075A MX2010008075A MX2010008075A MX 2010008075 A MX2010008075 A MX 2010008075A MX 2010008075 A MX2010008075 A MX 2010008075A MX 2010008075 A MX2010008075 A MX 2010008075A MX 2010008075 A MX2010008075 A MX 2010008075A
- Authority
- MX
- Mexico
- Prior art keywords
- solar cells
- type doping
- wafers
- manufacture
- phosphorus
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005554 pickling Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000002062 proliferating effect Effects 0.000 abstract 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
- H10F71/1375—Apparatus for automatic interconnection of photovoltaic cells in a module
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2295808P | 2008-01-23 | 2008-01-23 | |
| PCT/EP2008/055173 WO2009092453A2 (en) | 2008-01-23 | 2008-04-28 | Process for the manufacture of solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2010008075A true MX2010008075A (es) | 2010-08-04 |
Family
ID=40786668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2010008075A MX2010008075A (es) | 2008-01-23 | 2008-04-28 | Proceso para la fabricacion de celulas solares. |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US10453986B2 (enExample) |
| EP (1) | EP2235757B1 (enExample) |
| JP (4) | JP2011510501A (enExample) |
| KR (3) | KR20180033600A (enExample) |
| CN (2) | CN101926010A (enExample) |
| AU (1) | AU2008348838A1 (enExample) |
| BR (1) | BRPI0822196A2 (enExample) |
| IL (1) | IL206859A (enExample) |
| MX (1) | MX2010008075A (enExample) |
| RU (1) | RU2476959C2 (enExample) |
| TW (1) | TWI595675B (enExample) |
| WO (1) | WO2009092453A2 (enExample) |
| ZA (1) | ZA201005208B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2949237B1 (fr) * | 2009-08-24 | 2011-09-30 | Ecole Polytech | Procede de nettoyage de la surface d'un substrat de silicium |
| KR20120092112A (ko) | 2009-09-18 | 2012-08-20 | 솔베이 플루오르 게엠베하 | 상압에서 태양전지용 웨이퍼를 제조하는 방법 |
| WO2011051251A1 (en) * | 2009-10-26 | 2011-05-05 | Solvay Fluor Gmbh | Etching process for producing a tft matrix |
| US8008208B2 (en) * | 2009-12-07 | 2011-08-30 | Applied Materials, Inc. | Method of cleaning and forming a negatively charged passivation layer over a doped region |
| JP2013524510A (ja) * | 2010-03-30 | 2013-06-17 | アプライド マテリアルズ インコーポレイテッド | ｐ型拡散層の上に負荷電パッシベーション層を形成する方法 |
| TWI586842B (zh) | 2010-09-15 | 2017-06-11 | 首威公司 | 氟之製造工廠及使用彼之方法 |
| WO2012035000A1 (en) | 2010-09-15 | 2012-03-22 | Solvay Sa | Method for the removal of f2 and/or of2 from a gas |
| WO2013024041A1 (en) | 2011-08-17 | 2013-02-21 | Solvay Sa | Electrolytic process for the manufacture of fluorine and an apparatus therefor |
| EP2860288A1 (en) | 2013-10-11 | 2015-04-15 | Solvay SA | Improved electrolytic cell |
| EP2860287A1 (en) | 2013-10-11 | 2015-04-15 | Solvay SA | Improved electrolytic cell |
| EP2944385A1 (en) | 2014-05-12 | 2015-11-18 | Solvay SA | A process for etching and chamber cleaning and a gas therefor |
| EP3038169A1 (en) | 2014-12-22 | 2016-06-29 | Solvay SA | Process for the manufacture of solar cells |
| EP3104418B8 (de) * | 2015-06-08 | 2018-04-04 | Meyer Burger (Germany) GmbH | Verfahren und vorrichtung zum texturieren einer siliziumoberfläche |
| KR102575017B1 (ko) | 2016-11-17 | 2023-09-05 | 삼성디스플레이 주식회사 | 유리 기판의 결함 검출 방법 |
| CN108550613B (zh) * | 2018-05-30 | 2020-12-18 | 信利光电股份有限公司 | 一种显示模组 |
| JP7256685B2 (ja) * | 2019-05-16 | 2023-04-12 | 株式会社ディスコ | 研削装置 |
| DE102021200627A1 (de) * | 2021-01-25 | 2022-08-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zur Herstellung einer Solarzelle |
| CN115148850B (zh) * | 2022-06-27 | 2023-06-02 | 晶科能源股份有限公司 | 一种硅片及其制备方法、钝化处理溶液 |
Family Cites Families (59)
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| US4141811A (en) | 1978-04-24 | 1979-02-27 | Atlantic Richfield Company | Plasma etching process for the manufacture of solar cells |
| US4249957A (en) | 1979-05-30 | 1981-02-10 | Taher Daud | Copper doped polycrystalline silicon solar cell |
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| US4731158A (en) | 1986-09-12 | 1988-03-15 | International Business Machines Corporation | High rate laser etching technique |
| DE3725346A1 (de) | 1987-07-30 | 1989-02-09 | Nukem Gmbh | Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle |
| JPH0362968A (ja) | 1989-07-31 | 1991-03-19 | Fujitsu Ltd | 半導体装置の製造方法 |
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| US5317432A (en) * | 1991-09-04 | 1994-05-31 | Sony Corporation | Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel |
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| RU2065226C1 (ru) | 1993-07-27 | 1996-08-10 | Институт микроэлектроники РАН | Способ изготовления низкоомного контакта к кремнию |
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| JP2002329710A (ja) | 2001-04-26 | 2002-11-15 | Kyocera Corp | シリコン基板の粗面化法 |
| JP4721557B2 (ja) | 2001-05-29 | 2011-07-13 | 京セラ株式会社 | 太陽電池用基板の粗面化法 |
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| JP4104320B2 (ja) * | 2001-11-16 | 2008-06-18 | セントラル硝子株式会社 | 二フッ化カルボニルの製造方法 |
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| JP2004134577A (ja) * | 2002-10-10 | 2004-04-30 | Seiko Epson Corp | 半導体薄膜の製造方法、薄膜トランジスタ、半導体装置、薄膜太陽電池、複合半導体装置の製造方法、電気光学装置及び電子機器 |
| RU2250536C1 (ru) * | 2004-01-08 | 2005-04-20 | Открытое акционерное общество "Сатурн" | Солнечная батарея |
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| US7581549B2 (en) | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
| US20060062914A1 (en) * | 2004-09-21 | 2006-03-23 | Diwakar Garg | Apparatus and process for surface treatment of substrate using an activated reactive gas |
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| US20060183055A1 (en) * | 2005-02-15 | 2006-08-17 | O'neill Mark L | Method for defining a feature on a substrate |
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| DE102005040596B4 (de) | 2005-06-17 | 2009-02-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Entfernung einer dotierten Oberflächenschicht an Rückseiten von kristallinen Silizium-Solarwafern |
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| RU2301477C1 (ru) | 2005-12-15 | 2007-06-20 | Государственное образовательное учреждение высшего профессионального образования Самарский государственный аэрокосмический университет им. акад. С.П. Королева | Способ увеличения чувствительности и быстродействия фотоэлектрического преобразователя перемещений в код |
| CN101443888B (zh) * | 2006-03-13 | 2011-03-16 | 内诺格雷姆公司 | 薄硅或者锗片以及由薄片形成的光电池 |
| JP2007250985A (ja) * | 2006-03-17 | 2007-09-27 | Showa Denko Kk | プラズマエッチング方法 |
| EP3269843A1 (en) | 2006-04-10 | 2018-01-17 | Solvay Fluor GmbH | Etching process |
| JP4153961B2 (ja) * | 2006-04-25 | 2008-09-24 | 積水化学工業株式会社 | シリコンのエッチング方法 |
| WO2008043827A2 (de) | 2006-10-12 | 2008-04-17 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
| WO2009018509A1 (en) * | 2007-08-02 | 2009-02-05 | Applied Materials, Inc. | Thin film transistors using thin film semiconductor materials |
| RU2010130570A (ru) | 2007-12-21 | 2012-01-27 | Солвей Флуор Гмбх (De) | Способ получения микроэлектромеханических систем |
| KR20120092112A (ko) | 2009-09-18 | 2012-08-20 | 솔베이 플루오르 게엠베하 | 상압에서 태양전지용 웨이퍼를 제조하는 방법 |
| WO2011051251A1 (en) | 2009-10-26 | 2011-05-05 | Solvay Fluor Gmbh | Etching process for producing a tft matrix |
| JP2013509700A (ja) | 2009-10-30 | 2013-03-14 | ソルヴェイ（ソシエテ アノニム） | Ｆ２およびｃｏｆ２を使用するプラズマエッチングおよびチャンバのプラズマ洗浄の方法 |
-
2008
- 2008-04-28 AU AU2008348838A patent/AU2008348838A1/en not_active Abandoned
- 2008-04-28 US US12/863,355 patent/US10453986B2/en not_active Expired - Fee Related
- 2008-04-28 KR KR1020187008071A patent/KR20180033600A/ko not_active Abandoned
- 2008-04-28 WO PCT/EP2008/055173 patent/WO2009092453A2/en not_active Ceased
- 2008-04-28 CN CN2008801254667A patent/CN101926010A/zh active Pending
- 2008-04-28 KR KR1020157012833A patent/KR20150063581A/ko not_active Ceased
- 2008-04-28 EP EP08749796.2A patent/EP2235757B1/en not_active Not-in-force
- 2008-04-28 RU RU2010134889/28A patent/RU2476959C2/ru not_active IP Right Cessation
- 2008-04-28 JP JP2010543393A patent/JP2011510501A/ja active Pending
- 2008-04-28 CN CN201610223616.4A patent/CN105789378A/zh active Pending
- 2008-04-28 BR BRPI0822196-0A patent/BRPI0822196A2/pt not_active IP Right Cessation
- 2008-04-28 MX MX2010008075A patent/MX2010008075A/es unknown
- 2008-04-28 KR KR1020107018533A patent/KR20100113588A/ko not_active Ceased
-
2009
- 2009-01-19 TW TW098101898A patent/TWI595675B/zh not_active IP Right Cessation
-
2010
- 2010-07-07 IL IL206859A patent/IL206859A/en active IP Right Grant
- 2010-07-21 ZA ZA2010/05208A patent/ZA201005208B/en unknown
-
2014
- 2014-12-04 JP JP2014245878A patent/JP2015057858A/ja active Pending
-
2016
- 2016-09-08 JP JP2016175410A patent/JP6546889B2/ja not_active Expired - Fee Related
-
2018
- 2018-07-04 JP JP2018127406A patent/JP2018152615A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN101926010A (zh) | 2010-12-22 |
| KR20150063581A (ko) | 2015-06-09 |
| EP2235757B1 (en) | 2016-06-08 |
| US20100288330A1 (en) | 2010-11-18 |
| KR20100113588A (ko) | 2010-10-21 |
| KR20180033600A (ko) | 2018-04-03 |
| JP2017017331A (ja) | 2017-01-19 |
| RU2476959C2 (ru) | 2013-02-27 |
| JP2015057858A (ja) | 2015-03-26 |
| CN105789378A (zh) | 2016-07-20 |
| TWI595675B (zh) | 2017-08-11 |
| RU2010134889A (ru) | 2012-02-27 |
| WO2009092453A3 (en) | 2009-12-10 |
| JP2018152615A (ja) | 2018-09-27 |
| JP2011510501A (ja) | 2011-03-31 |
| JP6546889B2 (ja) | 2019-07-17 |
| TW201003935A (en) | 2010-01-16 |
| US10453986B2 (en) | 2019-10-22 |
| BRPI0822196A2 (pt) | 2015-06-23 |
| ZA201005208B (en) | 2012-01-25 |
| EP2235757A2 (en) | 2010-10-06 |
| WO2009092453A2 (en) | 2009-07-30 |
| IL206859A0 (en) | 2010-12-30 |
| AU2008348838A1 (en) | 2009-07-30 |
| IL206859A (en) | 2016-12-29 |
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