TW201712885A - Sonar cell and a method of fabricating sonar cell - Google Patents

Sonar cell and a method of fabricating sonar cell

Info

Publication number
TW201712885A
TW201712885A TW105123722A TW105123722A TW201712885A TW 201712885 A TW201712885 A TW 201712885A TW 105123722 A TW105123722 A TW 105123722A TW 105123722 A TW105123722 A TW 105123722A TW 201712885 A TW201712885 A TW 201712885A
Authority
TW
Taiwan
Prior art keywords
sonar
cell
type
region
diffusing layer
Prior art date
Application number
TW105123722A
Other languages
Chinese (zh)
Other versions
TWI606601B (en
Inventor
Kunihiko Nishimura
Shinya Nishimura
Takehiko Sato
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW201712885A publication Critical patent/TW201712885A/en
Application granted granted Critical
Publication of TWI606601B publication Critical patent/TWI606601B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

A sonar cell provided by the present invention comprises: a p-type diffusion layer (2) formed on a light receiving side (1A), which is a first main surface, of an n-type single crystal silicon substrate (1); a n-type diffusing layer (5) formed on a back side (1B), which is a second main surface, oppositing to the light-receiving side (1A); a light receiving side electrode (4) coupled to the p-type diffusing layer (2); and a back side electrode (7) coupled to the n-type diffusing layer (5). The p-type diffusing layer (2) comprises: a first region (R1) having a first diffusing depth; a second region (R2), disposed as a strip-like structure along the periphery of the semiconductor substrate to surround the first region (R1) and the diffusing depth of the first dopant is deeper than the first region (R1). A sonar cell of reverse bias with low leaking can be thus obtained.
TW105123722A 2015-07-30 2016-07-27 Sonar cell and a method of fabricaitng sonar cell TWI606601B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015151147 2015-07-30
PCT/JP2016/071320 WO2017018300A1 (en) 2015-07-30 2016-07-20 Solar cell and method for manufacturing solar cell

Publications (2)

Publication Number Publication Date
TW201712885A true TW201712885A (en) 2017-04-01
TWI606601B TWI606601B (en) 2017-11-21

Family

ID=57884811

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105123722A TWI606601B (en) 2015-07-30 2016-07-27 Sonar cell and a method of fabricaitng sonar cell

Country Status (3)

Country Link
JP (1) JP6234633B2 (en)
TW (1) TWI606601B (en)
WO (1) WO2017018300A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110098265A (en) * 2019-04-29 2019-08-06 南通天盛新能源股份有限公司 A kind of N-type front electrode of solar battery method for metallising
EP4287267A1 (en) * 2022-06-01 2023-12-06 Jinko Solar (Haining) Co., Ltd. Photovoltaic cell and photovoltaic module

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100304098B1 (en) * 1996-09-06 2002-03-08 다니구찌 이찌로오, 기타오카 다카시 Transistor and method of manufacturing
JP3676954B2 (en) * 1999-11-08 2005-07-27 シャープ株式会社 Photoelectric conversion element and manufacturing method thereof
JP5868290B2 (en) * 2012-08-23 2016-02-24 三菱電機株式会社 Photovoltaic device and manufacturing method thereof
JP2014146766A (en) * 2013-01-30 2014-08-14 Mitsubishi Electric Corp Method for manufacturing solar cell and solar cell
JP2015130406A (en) * 2014-01-07 2015-07-16 三菱電機株式会社 Photovoltaic device, method of manufacturing the same, and photovoltaic module

Also Published As

Publication number Publication date
JP6234633B2 (en) 2017-11-22
TWI606601B (en) 2017-11-21
JPWO2017018300A1 (en) 2017-07-27
WO2017018300A1 (en) 2017-02-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees