200824141 九、發明說明： 本發明係關於矽太陽能電池之製造，尤其是一種使結 曰曰石夕太1¼此電池鈍化之方法，這種方法是先在一適當的裝 置内使結晶矽在溫度影響下經由一擴散過程與磷摻雜，以 製成一種二極體，然後利用一種電漿法經由氮化矽沉積使 石夕表面純化及減反射。 為了製造矽太陽能電池，需要將一種多晶正方形或長 方形石夕毛胚進行摻雜，以形成二極體。在常見的標準製程 中P型石夕隶好疋與碟摻雜形成二極體。這種標準製程是將 作為摻雜源之摻雜物質敷鑛在石夕毛胚上，然後再加熱。摻 雜物質(也就是碟原子)會滲入石夕，同時摻雜原子會被電激 化。 、也可以利用一種p〇CL3過程進行捧雜，這種過程是在 溫度影響下將-種作為摻雜源之磷玻璃沉積在石夕毛胚之 對光線的正面上。 除了摻雜磷外’也可以將硼從石夕毛胚的 到矽毛胚中。 々雜 在受溫度影響的擴散過程中會產生摻雜原子的大部分 ‘數狀擴散深度分佈。魏極表面電_常界於2G歐姆至 2 I姆之間。考慮到相應之發射極深度(約 =㈣需㈣使之钱行的驗触形献好的觸 通，以及擴散過程的時間不能太長 濃度最高不應超過5xl()2W。 U原子的表面 但是距離表面很近的报高的摻雜物質濃度並不能全部 5 200824141 被電激化，因此會形成一個厚度約20nm至50nm的表面 層，也就是所謂的死層(DeadLayer)。擴散過程結束後可以 用氫氟酸將摻雜源(通常是磷玻璃)去除。在這個去除摻雜源 的餞刻過程t，絲面層是作為細停讀，❺且由於，，死 層係位於矽表面層内，因此不會受到影響。 接著是進行氮化物沉積的減反射及鈍化步驟，這個步 驟，常是以電漿法形成氮化物沉積，最後—個步驟則是二 上背面接點及正面翻，㈣成教陽能電池與電路的導 電連接。 夺 本發明的目的是提出一種使太陽能電池鈍化的方法， 而且這種方法能夠以最小的花費達到使太陽能電池的效能 明顯改善的效果。 >為達到土述目的，本發明提出之方法的特徵是在沉積 出氮切之錢以乾#法在㈣電漿巾將靠财毛胚表面 之含有南濃度麟的’’死層”去除掉。 為了達到較高的侧率，—種有利的方式是在侧電 漿中加入由cyvo2混合成的蝕刻氣體。 另外-種可行的方式是在侧電漿中加入含齒素的混 合氣體。 種4寸別有利的方式是在進行氮化物沉積之反應器内 將”死層”去除掉。 本發明的另外—猶_實施方式是以頻率在 10kHz 至500kHz之間的低頻電漿作為爛電聚，並對此低頻電聚 施以脈衝，以改善反應物分佈及功率控制。 6 200824141 、為了避免可能發生的污染或其他干擾，一種有利的方 式是在回蝕及沉積氮化物的過程之間保持真空狀態，而且 既不要重新裝填也不要移動矽毛胚。 另外一種提南產量的方法是在不同的反應室中及在直 空狀態下進行，，死層，，的回蝕及氮化物的沉積。 、 -種雜絲執行本發明之方法的電麟備，具有— f包括平行板晶®支架之真空電漿室，其巾該支架之作用 是使钕刻過程及沉積過冑在電漿中盡可能達到均勻的電場 分佈，而且真空電漿室是可以被加熱的。 將死層去除可以藉由以氮化物作為電子反射器，使 太陽能電池達収好的鈍化效果。此外，由於“死層，，中的 推雜物質濃度很高，使得載流子的複合佔壓倒性的比重， 因此“死層，，對於電流的產生並無貢獻，而且會減弱入射到 太陽能電池的光線。200824141 IX. INSTRUCTIONS: The present invention relates to the manufacture of tantalum solar cells, and more particularly to a method for passivating a battery of tantalum stone, which is first applied to the temperature of the crystal in a suitable device. The phosphorus is doped with a phosphorus diffusion process to form a diode, and then the surface of the stone surface is purified and anti-reflected by a plasma method through the deposition of tantalum nitride. In order to manufacture a tantalum solar cell, it is necessary to dope a polycrystalline square or a long square stone embryo to form a diode. In the common standard process, the P-type Shi Xi is well-formed and the dish is doped to form a diode. This standard process is to deposit the doping material as a doping source on the stone embryo and then heat it. The dopants (ie, the disc atoms) will penetrate into the stone and the dopant atoms will be electrically excited. Alternatively, a p〇CL3 process can be used to carry out the mixing process by depositing a phosphorous glass as a doping source under the influence of temperature on the front side of the light. In addition to doping with phosphorus, boron can also be extracted from the embryos of the stalk embryo to the mane embryo. Noisy Most of the 'digital diffusion depth distribution' of dopant atoms occurs during temperature-dependent diffusion. Wei pole surface electricity _ often between 2G ohms to 2 I m. Considering the corresponding emitter depth (about = (four) requires (four) to make the money touch the touch of the touch, and the diffusion process can not be too long, the concentration should not exceed 5xl () 2W. The surface of the U atom but The doping concentration of the report near the surface is not fully energized, so a surface layer of about 20 nm to 50 nm is formed, which is called a dead layer. The diffusion process can be used after the end of the diffusion process. Hydrofluoric acid removes the dopant source (usually phosphor glass). In this engraving process to remove the dopant source, the silk layer is used as a fine read, and because of, the dead layer is located in the surface layer of the crucible. Therefore, it will not be affected. Next is the anti-reflection and passivation step of nitride deposition. In this step, the nitride deposition is often formed by plasma method. The last step is the second back contact and the front turn. (4) Adult education The conductive connection between the solar cell and the circuit. The purpose of the invention is to propose a method for passivating the solar cell, and this method can achieve a significant improvement in the performance of the solar cell with minimal cost. Effect. In order to achieve the purpose of the soil, the method proposed by the present invention is characterized in that the deposition of the nitrogen cut money to dry #法在(四)the plasma towel will rely on the surface of the rich embryo to contain the 'dead layer of the south concentration Lin In order to achieve a higher side rate, an advantageous way is to add an etching gas mixed with cyvo2 into the side plasma. Another possible way is to add a dentate-containing mixture to the side plasma. Gas. A 4-inch advantageous way is to remove the "dead layer" in the reactor where the nitride is deposited. The additional embodiment of the present invention is based on low frequency plasma with a frequency between 10 kHz and 500 kHz. Rotating electricity, and applying pulses to this low-frequency electricity to improve reactant distribution and power control. 6 200824141 In order to avoid possible pollution or other interference, an advantageous way is to etch back and deposit nitrides. Maintain a vacuum between the two, and do not refill or move the bristle embryo. Another way to increase the yield of the south is to carry out in different reaction chambers and in a straight space, dead layer, and eclipse and The deposition of nitrides, a type of hybrid wire that performs the method of the present invention, has a vacuum plasma chamber containing a parallel plate crystal® support, and the support of the support is to enable the engraving process and deposition. A uniform electric field distribution is achieved as much as possible in the plasma, and the vacuum plasma chamber can be heated. The removal of the dead layer can achieve a good passivation effect of the solar cell by using nitride as an electron reflector. Due to the "dead layer, the concentration of the dopants in the medium is high, so that the recombination of carriers accounts for the overwhelming specific gravity, so the "dead layer" does not contribute to the generation of current, and it will weaken the light incident on the solar cell. .
此外，附著在碟上的污染物(“吸氣，，)在去除“死層，，時也 -—併從太陽能電料被去除。這樣就可㈣免這些 勿在燒結接點時可能造成的不良影響。 ,、 旦因此去除“死層，，不但可以提高太陽能電池之電流產 而且可以對電I和佔空因數造成有利的影響 =數是指端能電池在最大功桂之最切率除以空 包墾與短路電流之乘積所得的商。 ,、工 層，，，==的在同一個反應器t先去除電財的“死 夕/、邊再進行i化物的沉積的方法是一種不 夕％間且容易實現的方法，而奢二、仅 月你及m态所需的蝕刻氣 7 200824141 體原本即已存在，不需另外添加。 結果 =料陽能魏時錢切耗胚⑴放在適 田:反—中與餐雜。這個摻雜過程是先利用一種 ^3過程將磷玻璃⑺敷鑛在石夕毛胚⑴的m 在/皿度影響下使磷經由擴散過程進入石夕毛胚 是大部分渗入的磷會形成指數狀擴散深度分佈。/处In addition, the contaminants attached to the dish ("inhalation,") are removed from the "dead layer," and are removed from the solar energy. This will allow (4) to avoid the adverse effects that may occur when sintering the joint. Therefore, the removal of the "dead layer" can not only improve the current production of the solar cell but also have a favorable effect on the electric I and the duty factor. The number refers to the maximum rate of the end energy battery divided by the empty package. The quotient of the product of 垦 and short-circuit current. , , , , , , , = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = The method is easy to implement, and the extra etch gas required for you and the m state is only available in 200824141. It does not need to be added. Results = material Yang can Wei Shi Qian cut embryos (1) placed in the field: anti-medium and meal. This doping process is to first use a ^3 process to fertilize the phosphorus glass (7) in the stone stalk embryo (1) m under the influence of the degree of water to make the phosphorus into the diarrhea through the diffusion process. Most of the infiltrated phosphorus will form an index. Diffusion depth distribution. / at
养』ίΐϊ個過程中距離耗胚(1)之表面很近的报高的 部被激化，因此會形成前面提及的 死層⑶° _在死層⑶下方會形成所需的η型導電声⑷。 领是從耗胚⑴的另外—個面擴散财毛胚⑴二，因 導 =成-個Ρ型導電層(5)，同時在η型導電層(4)及ρ型 龟曰（5)之間會形成一個ρη接面⑹。 it第2圖所7^ ’下—個步驟是所謂的驗步驟，也就 疋㈣11氟酸將填玻璃(2)去除掉，在這個步驟中石夕表面是 作為_停止層’因此死層⑶並不會受到侧。 、曰根據本發_綠，下—個麵是含有 之混合氣體或其他含鹵素之混合氣體的侧以乾敍法 將死層0)去除掉，而且這個去除步驟是在以氮化物沉積使 2陽能電池減反射及鈍化之前進行。第3圖顯示一個製 造完成之矽太陽能電池(10)的示意圖。 、 ^去除死層(3)的過程可以在一個真空室中進行，接著也 可以在這個真空室中繼續進行氮化物沉積的步驟。可以使 =C2IV〇2之混合氣體或其他含鹵素之混合氣體作為蝕刻 氣體以及以頻率在1〇扭2至500kHz之間的低頻電漿作為 8 200824141 侧電漿’必㈣対對此低頻賴施赠衝。如果以上 程:在不同的真空至中進行’則必須注意在_毛 仃’、要之移動時真空狀態不能中斷。 ，著细a漿法在—個可加熱的真空賴室中沉積出 =化氮’以便藉由氮化物的沉積在n型導電層⑷上方形成In the process of raising the ΐϊ ΐϊ 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离 距离(4). The collar diffuses from the other side of the consumable embryo (1) (1), because the conductive layer (5) is conductive, and the η-type conductive layer (4) and the ρ-type turtle (5) A ρη junction (6) is formed between the two. It is shown in Fig. 2 that the next step is the so-called test step, that is, the 四(iv)11-fluoric acid removes the glass (2), and in this step, the surface of the stone eve is used as the _stop layer, thus the dead layer (3) and Will not be affected by the side.曰 according to the hair _ green, the lower side is the side containing the mixed gas or other halogen-containing mixed gas to remove the dead layer 0) in a dry manner, and this removal step is performed by nitride deposition 2 The solar cell is subjected to anti-reflection and passivation. Figure 3 shows a schematic of a fabricated solar cell (10). The process of removing the dead layer (3) can be carried out in a vacuum chamber, and then the step of depositing nitride can be continued in this vacuum chamber. It is possible to use a mixed gas of =C2IV〇2 or other halogen-containing mixed gas as an etching gas and a low-frequency plasma with a frequency of 1 to 2 kHz between 2 and 500 kHz as 8 200824141 side plasma 'must' (four) 対 for this low frequency Give a punch. If the above process: in different vacuum to medium ', you must pay attention to the _ 仃 、 、, the vacuum state can not be interrupted when moving. A fine slurry method is used to deposit = nitrogen in a heated vacuum chamber to form a nitride layer (4) by deposition of a nitride.
其中’該真空電漿室具有一個平行板晶 貝木’以支架之作用是使侧過程及沉積過程在電漿中 盡可能達到均勻的電場分佈。 7 為了完成石夕太陽能電池⑽的製造，接著必須利用一種 已知的方法將-個正面接點⑻敷鍍在抗反射層⑺上，以及 將一個背面接點(9)敷鍍在背面上。 可以將正面接點(8)製作成接點格栅或透明電極的形 式0 、本發明提出的這種容易實現且不會花費很多時間之方 法除了可以大幅提高太陽㈣池的效能外，而且所使用的 蝕刻氣體也可以同時作為清潔反應器用的蝕刻氣體。此 外，本發明的方法還可以提高太陽能電池的電流產量，以 及對電壓和佔空因數造成有利的影響。 9 200824141 【圖式簡單說明】 以下配合實施例及圖式對本發明的内容做進一步的說 明。 苐1圖·在鱗擴散過程結束後，一個具有磷玻璃鑛層之 發毛胚的示意圖。 第2圖··如第〗圖之矽毛胚在去除磷玻璃鍍層後的示意 圖。 第3圖：一個製作完成的太陽能電池。 【主要元件符號說明】 1 矽毛胚 3 死層 5 Ρ型導電層 7 抗反射層 9 背面接點 2 磷玻璃 4 η型導電層 6 Ρη接面 8 正面接點 10 秒太陽能電池Wherein the vacuum plasma chamber has a parallel plate of crystallites, the role of the support is to achieve a uniform electric field distribution in the plasma during the side process and the deposition process. 7 In order to complete the manufacture of the Shi Xi solar cell (10), a front contact (8) must be applied to the antireflection layer (7) and a back contact (9) to the back surface by a known method. The front contact (8) can be made into the form of a contact grid or a transparent electrode. The method of the present invention which is easy to implement and does not take a lot of time can not only greatly improve the performance of the solar pool, but also The etching gas used can also serve as an etching gas for cleaning the reactor at the same time. In addition, the method of the present invention can also increase the current production of solar cells and have a beneficial effect on voltage and duty cycle. 9 200824141 [Brief Description of the Drawings] The contents of the present invention will be further described below with reference to the embodiments and drawings.苐1图·A schematic diagram of a hairy embryo with a phosphorous glass ore layer after the end of the scale diffusion process. Fig. 2 is a schematic diagram of the blank embryo after removal of the phosphor glass coating. Figure 3: A finished solar cell. [Description of main component symbols] 1 矽 胚 胚 3 dead layer 5 Ρ type conductive layer 7 anti-reflection layer 9 back contact 2 phosphor glass 4 η-type conductive layer 6 Ρ n junction 8 front contact 10 sec solar cell