CN109904067A - A kind of PERC double-side cell manufacture craft - Google Patents
A kind of PERC double-side cell manufacture craft Download PDFInfo
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- CN109904067A CN109904067A CN201910054105.8A CN201910054105A CN109904067A CN 109904067 A CN109904067 A CN 109904067A CN 201910054105 A CN201910054105 A CN 201910054105A CN 109904067 A CN109904067 A CN 109904067A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of manufacture crafts of p-type PERC double-side solar cell, it is the following steps are included: silicon face making herbs into wool；Diffusion: ion implanting mode is used；Laser SE；Monocrystalline etching polishing；Precipitate passivating film in the back side；Front depositing antireflection film；Backside laser delineates contact zone；Back up back electrode and alum gate line；Front printing silver grating line；High temperature sintering.The step of present invention uses ion implantation technology in diffusion technique, can flexibly control the concentration and depth of doping, also eliminates removal phosphorosilicate glass and back knot in conventional diffusion, the cell piece efficiency distribution of mass simultaneous production is more concentrated.
Description
Technical field
The present invention relates to crystal silicon solar energy battery manufacturing technology field more particularly to a kind of two-sided PERC crystalline silicon sun
The preparation method of energy battery.
Background technique
For from present solar cell development environment, with the development of solar cell, equipment depreciation and improved efficiency are
The Important Problems that more and more manufacturing enterprises must pay close attention to, the method not changing existing equipment or Jing Guo scrap build mention
The efficiency of high existing producing line improves the power that production capacity is enterprise's existence and development；The integration of equipment and recycling are also to reduce to fix
Assets waste, a kind of method for improving competition among enterprises.
Photovoltaic " super leader " plan that National Energy Board releases, is related to more new and effective product, including
Double-sided battery pack.Almost double-side cell/double-side assembly is listed among its strategic plan by each photovoltaic manufacture commercial city, two-sided electricity
Pond is also current most simple also most cost-benefit battery, not only the two-sided conversion for having light and does not need to increase additional
Process.
It is p-type PERC double-side solar cell that applicant, which has submitted a key name to State Intellectual Property Office in 2017.10.12,
Production method, application No. is 201710946553.X.This application is the following steps are included: 1. crystal silicon surface wool manufacturing；2. spreading；3. going
PSG and monocrystalline polishing；4. passivating film is precipitated at the back side；5. front depositing antireflection film；6. backside laser delineates contact zone；7. the back side
Print back electrode and alum gate line；8. front printing silver grating line；9. high temperature sintering.The present invention is transformed upgrading to traditional producing line,
It realizes transformation of the solar cell product from single side solar cell to double-side solar cell, increases the PN junction area of solar cell, mention
The utilization rate of high sunlight increases the closed current of solar cell, achievees the purpose that improve efficiency.Two-sided PERC cell aluminum paste material
Dosage is about the 20-30% of single side PERC battery.
Since the program does not consider that Solid Source B diffusion/P diffusion is expanded altogether, two kinds of diffusion demand optimum temperature differences are larger, not
The sheet resistance most preferably spread can be reached, this kind of diffusion uniformity is poor, and there are the influences that efficiency is relatively low and efficiency is unstable.
Summary of the invention
Technical solution:
A kind of manufacture craft of p-type PERC double-side solar cell, comprising the following steps:
1. silicon face making herbs into wool: selection P-type wafer carries out surface flannelette to the two-sided of P-type wafer of selection under lye,
Then chemical cleaning is carried out in acid condition, removes surface impurity；
2. diffusion: using ion implanting mode, carry out B diffusion in cell backside, carry out P diffusion in battery front side, then
It is activated by annealing.
3. laser SE: design backside laser figure, it is heavily doped by laser technology progress back aluminium grid line B area progress, make
Silicon chip back side face forms p++ doped layer, designs front laser graphics, carries out the region front silver grating line P by laser technology and carries out
It is heavily doped, so that silicon chip back side face is formed n++ doped layer；
4. monocrystalline etching polishing: monocrystalline polished backside；
5. passivating film is precipitated at the back side: back side single side is sequentially depositing aluminium oxide/silicon nitride stack film；
6. front depositing antireflection film: front deposited silicon nitride antireflective coating；
7. backside laser delineates contact zone: the partially open film in the back side, backside laser graphic designs: spot diameter: 10-35
μm, the spacing of laser rays: 500-700 μm；
8. back up back electrode and alum gate line, the back side uses aluminium grid line design, Al-BSF halftone design: alum gate line width
Degree: 100-300 μm, secondary grid radical: 96-115 root；
9. front printing silver grating line；
9. temperature sintering.
Preferably, step 7. in, spot diameter is 15 μm, and the spacing of laser rays is 550 μm.
Preferably, step 7. in, spot diameter is 25 μm, and the spacing of laser rays is 650 μm.
Preferably, step 7. in, spot diameter is 45 μm, and the spacing of laser rays is 750 μm.
Preferably, step 8. in, alum gate line width: 60 μm, secondary grid radical: 96.
Preferably, step 8. in, alum gate line width: 80 μm, secondary grid radical: 105.
Preferably, step 8. in, alum gate line width: 100 μm, secondary grid radical: 115.
Specifically, step 1. in, the specific steps of chemical cleaning are as follows: with mass fraction be 1.2 ± 0.2% sodium hydroxide
Or potassium hydroxide solution carries out chemical attack to P-type wafer surface at 80 ± 2 DEG C, prepares the flannelette of Pyramid, with
It is cleaned afterwards with the hydrofluoric acid that mass fraction is 15 ± 3%.
Specifically, step 2. in, 110 ± 20 ohm of P diffused sheet resistance, 60 ± 20 ohm of B diffused sheet resistance.
Beneficial effects of the present invention
The invention has the benefit that
A kind of manufacture craft of p-type PERC double-side solar cell is the source paper-like Solid Source B in background technique, and front uses
The mode of logical phosphorus oxychloride carries out positive phosphorus diffusion.Two kinds of diffusion demand optimum temperature differences are larger, fail to reach best diffusion
Sheet resistance, this kind of diffusion uniformity is poor, and there are the influences that efficiency is relatively low and efficiency is unstable.The Ion implantation diffusion of the application
Mode can accurately control diffusion source amount and uniformity is more preferable, and efficiency fluctuation is smaller；After B diffusion zone progress SE technique is heavily doped,
Contact resistance is more preferable, and efficiency can be improved；Aluminium grid line design is narrower, can effectively reduce back side shading-area, and it is short to improve the back side
Road electric current improves back side efficiency.Further, the present invention uses ion implantation technology in diffusion technique, can flexibly control
The concentration and depth for making doping also eliminate the step of phosphorosilicate glass and back knot are removed in conventional diffusion, mass simultaneous production
Cell piece efficiency distribution is more concentrated；In order to further ensure step 3. in, pass through laser doping technological advantage: 1, reduce series electrical
Resistance improves fill factor, and surface passivation effect is improved in 2, reduction Carrier recombination, and 3 enhancing battery shortwave spectral responses improve
Short circuit current and open-circuit voltage.Pass through above Superiority Promoting efficiency.
Detailed description of the invention
Fig. 1 is the flow diagram of production method of the present invention.
Specific embodiment
Below with reference to embodiment, the invention will be further described, and but the scope of the present invention is not limited thereto:
Embodiment 1:
A kind of manufacture craft of p-type PERC double-side solar cell, comprising the following steps:
1. crystal silicon surface wool manufacturing: selection P-type wafer carries out surface flannelette to the two-sided of P-type wafer of selection under lye
Change, then carry out chemical cleaning in acid condition, removes surface impurity；
The specific steps of chemical cleaning are as follows: the sodium hydroxide or potassium hydroxide solution that are 1.0% with mass fraction are at 78 DEG C
Under to P-type wafer surface carry out chemical attack, prepare the flannelette of Pyramid, then with mass fraction be 12% hydrogen fluorine
Acid is cleaned.
2. diffusion: using ion implanting mode, carry out B diffusion in cell backside, carry out P diffusion in battery front side, then
It is activated by annealing.P diffused sheet resistance: 110 ohm, B expansion sheet resistance: 60 ohm
3. laser SE: design backside laser figure, it is heavily doped by laser technology progress back aluminium grid line B area progress, make
Silicon chip back side face forms p++ doped layer, designs front laser graphics, carries out the region front silver grating line P by laser technology and carries out
It is heavily doped, so that silicon chip back side face is formed n++ doped layer；P diffused sheet resistance: 90 ohm, B expansion sheet resistance: 40 ohm
4. monocrystalline polishes: monocrystalline polished backside；
5. passivating film is precipitated at the back side: back side single side is sequentially depositing aluminium oxide/silicon nitride stack film；
6. front depositing antireflection film: front deposited silicon nitride antireflective coating；
7. backside laser delineates contact zone: the partially open film in the back side, backside laser graphic designs: spot diameter: 15 μm,
The spacing of laser rays: 550 μm；
8. back up back electrode and alum gate line, the back side uses aluminium grid line design, Al-BSF halftone design: alum gate line width
Degree: 60 μm, secondary grid radical: 96；
9. front printing silver grating line；
10. high temperature sintering.
Embodiment 2:
A kind of manufacture craft of p-type PERC double-side solar cell, comprising the following steps:
1. crystal silicon surface wool manufacturing: selection P-type wafer carries out surface flannelette to the two-sided of P-type wafer of selection under lye
Change, then carry out chemical cleaning in acid condition, removes surface impurity；
The specific steps of chemical cleaning are as follows: the sodium hydroxide or potassium hydroxide solution that are 1.2% with mass fraction are at 80 DEG C
Under to P-type wafer surface carry out chemical attack, prepare the flannelette of Pyramid, then with mass fraction be 15% hydrogen fluorine
Acid is cleaned.
2. diffusion: using ion implanting mode, carry out B diffusion in cell backside, carry out P diffusion in battery front side, then
It is activated by annealing.P diffused sheet resistance: 120 ohm, B expansion sheet resistance: 70 ohm
3. laser SE: design backside laser figure, it is heavily doped by laser technology progress back aluminium grid line B area progress, make
Silicon chip back side face forms p++ doped layer, designs front laser graphics, carries out the region front silver grating line P by laser technology and carries out
It is heavily doped, so that silicon chip back side face is formed n++ doped layer；P diffused sheet resistance: 100 ohm, B expansion sheet resistance: 55 ohm
4. monocrystalline polishes: monocrystalline polished backside；
5. passivating film is precipitated at the back side: back side single side is sequentially depositing aluminium oxide/silicon nitride stack film；
6. front depositing antireflection film: front deposited silicon nitride antireflective coating；
7. backside laser delineates contact zone: the partially open film in the back side, backside laser graphic designs: spot diameter: 25 μm,
The spacing of laser rays: 650 μm；
8. back up back electrode and alum gate line, the back side uses aluminium grid line design, Al-BSF halftone design: alum gate line width
Degree: 80 μm, secondary grid radical: 105；
9. front printing silver grating line；
10. high temperature sintering.
Embodiment 3:
A kind of manufacture craft of p-type PERC double-side solar cell, comprising the following steps:
1. crystal silicon surface wool manufacturing: selection P-type wafer carries out surface flannelette to the two-sided of P-type wafer of selection under lye
Change, then carry out chemical cleaning in acid condition, removes surface impurity；
The specific steps of chemical cleaning are as follows: the sodium hydroxide or potassium hydroxide solution that are 1.4% with mass fraction are at 82 DEG C
Under to P-type wafer surface carry out chemical attack, prepare the flannelette of Pyramid, then with mass fraction be 18% hydrogen fluorine
Acid is cleaned.
2. diffusion: using ion implanting mode, carry out B diffusion in cell backside, carry out P diffusion in battery front side, then
It is activated by annealing.P diffused sheet resistance: 130 ohm, B expansion sheet resistance: 80 ohm
3. laser SE: design backside laser figure, it is heavily doped by laser technology progress back aluminium grid line B area progress, make
Silicon chip back side face forms p++ doped layer, designs front laser graphics, carries out the region front silver grating line P by laser technology and carries out
It is heavily doped, so that silicon chip back side face is formed n++ doped layer；P diffused sheet resistance: 110 ohm, B expansion sheet resistance: 65 ohm
4. monocrystalline polishes: monocrystalline polished backside；
5. passivating film is precipitated at the back side: back side single side is sequentially depositing aluminium oxide/silicon nitride stack film；
6. front depositing antireflection film: front deposited silicon nitride antireflective coating；
7. backside laser delineates contact zone: the partially open film in the back side, backside laser graphic designs: spot diameter: 45 μm,
The spacing of laser rays: 750 μm；
8. back up back electrode and alum gate line, the back side uses aluminium grid line design, Al-BSF halftone design: alum gate line width
Degree: 100 μm, secondary grid radical: 115；
9. front printing silver grating line；
10. high temperature sintering.
P-type PERC double-side solar cell is prepared using above-described embodiment method, realizes solar cell product by single side too
Transformation of the positive electricity pond to double-side solar cell increases the PN junction area of solar cell, improves the utilization rate of sunlight, increases the sun
The closed current of battery achievees the purpose that improve efficiency.Two-sided PERC cell aluminum paste material dosage is about the 20- of single side PERC battery
30%.
Comparative example:
A kind of production method of p-type PERC double-side solar cell, comprising the following steps:
1. crystal silicon surface wool manufacturing: selection P-type wafer carries out surface flannelette to the two-sided of P-type wafer of selection under lye
Change, then carry out chemical cleaning in acid condition, removes surface impurity；
The specific steps of chemical cleaning are as follows: the sodium hydroxide or potassium hydroxide solution that are 1.0% with mass fraction are at 78 DEG C
Under to P-type wafer surface carry out chemical attack, prepare the flannelette of Pyramid, then with mass fraction be 12% hydrogen fluorine
Acid is cleaned.
2. diffusion: expanding technique altogether using B, P, positive P diffusion, back surface B diffusion, silicon wafer two panels is one group, and every group of silicon wafer is adopted
With being diffused in back-to-back fashion vertically, the source paper-like Solid Source B is inserted between two panels silicon chip back side, front is using logical trichlorine oxygen
The mode of phosphorus carries out positive phosphorus diffusion；It promotes diffusion furnace to spread altogether in progress high temperature, the front of silicon wafer is made to form n+ doped layer, back
Face forms p+ doped layer；
The source paper-like Solid Source B with a thickness of 1 μm, the flow velocity of phosphorus oxychloride is 800sccm.
It is 810 DEG C that high temperature, which is total to diffusion technique,.
3. PSG and monocrystalline is gone to polish: the remaining phosphorosilicate glass of etching procedure cleaning removal silicon chip surface and the monocrystalline back side are thrown
Light；
4. passivating film is precipitated at the back side: back side single side is sequentially depositing aluminium oxide/silicon nitride stack film；
5. front depositing antireflection film: front deposited silicon nitride antireflective coating；
6. backside laser delineates contact zone: the partially open film in the back side, backside laser graphic designs: spot diameter: 10 μm,
The spacing of laser rays: 500 μm；
7. back up back electrode and alum gate line, the back side uses aluminium grid line design, Al-BSF halftone design: alum gate line width
Degree: 100 μm, secondary grid radical: 96；
8. front printing silver grating line；
9. temperature sintering.
The M2 size battery piece that aforementioned four scheme produces 2000 is respectively adopted, aluminum slurry dosage is as shown in the table:
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Comparative example | |
| Cell aluminum paste material dosage (g) | 0.20 | 0.25 | 0.30 | 0.35 |
More former scheme has weight in wet base significant decrease, reduces manufacturing cost, and avoid in former scheme and spread the problems such as uneven,
Referring in particular to beneficial effect part, details are not described herein again.
Specific embodiment described herein is only to illustrate to spirit of that invention.The neck of technology belonging to the present invention
The technical staff in domain can make various modifications or additions to the described embodiments or replace by a similar method
In generation, however, it does not deviate from the spirit of the invention or beyond the scope of the appended claims.
Claims (9)
1. a kind of manufacture craft of p-type PERC double-side solar cell, it is characterised in that it the following steps are included:
1. silicon face making herbs into wool: selection P-type wafer carries out surface flannelette to the two-sided of P-type wafer of selection, then under lye
Chemical cleaning is carried out in acid condition, removes surface impurity；
2. diffusion: using ion implanting mode, carry out B diffusion in cell backside, carry out P diffusion in battery front side, then pass through
Annealing activation.
3. laser SE: design backside laser figure, it is heavily doped by laser technology progress back aluminium grid line B area progress, make silicon wafer
Back side face forms p++ doped layer, designs front laser graphics, heavily doped by the laser technology progress region front silver grating line P progress,
Silicon chip back side face is set to form n++ doped layer；
4. monocrystalline etching polishing: monocrystalline polished backside；
5. passivating film is precipitated at the back side: back side single side is sequentially depositing aluminium oxide/silicon nitride stack film；
6. front depositing antireflection film: front deposited silicon nitride antireflective coating；
7. backside laser delineates contact zone: the partially open film in the back side, backside laser graphic designs: spot diameter: 10-35 μm,
The spacing of laser rays: 500-700 μm；
8. back up back electrode and alum gate line, the back side uses aluminium grid line design, the design of Al-BSF halftone: alum gate line width:
100-300 μm, secondary grid radical: 96-115 root；
9. front printing silver grating line；
10. high temperature sintering.
2. a kind of manufacture craft of p-type PERC double-side solar cell according to claim 1, which is characterized in that step is 7.
In, spot diameter is 15 μm, and the spacing of laser rays is 550 μm.
3. a kind of manufacture craft of p-type PERC double-side solar cell according to claim 1, which is characterized in that step is 7.
In, spot diameter is 25 μm, and the spacing of laser rays is 650 μm.
4. a kind of manufacture craft of p-type PERC double-side solar cell according to claim 1, which is characterized in that step is 7.
In, spot diameter is 45 μm, and the spacing of laser rays is 750 μm.
5. a kind of manufacture craft of p-type PERC double-side solar cell according to claim 1, which is characterized in that step is 8.
In, alum gate line width: 60 μm, secondary grid radical: 96.
6. a kind of manufacture craft of p-type PERC double-side solar cell according to claim 1, which is characterized in that step is 8.
In, alum gate line width: 80 μm, secondary grid radical: 105.
7. a kind of manufacture craft of p-type PERC double-side solar cell according to claim 1, which is characterized in that step is 8.
In, alum gate line width: 100 μm, secondary grid radical: 115.
8. a kind of manufacture craft of p-type PERC double-side solar cell according to claim 1, which is characterized in that step is 1.
In, the specific steps of chemical cleaning are as follows: the sodium hydroxide or potassium hydroxide solution that are 1.2 ± 0.2% with mass fraction are 80 ± 2
Chemical attack is carried out to P-type wafer surface at DEG C, prepares the flannelette of Pyramid, is then 15 ± 3% with mass fraction
Hydrofluoric acid cleaned.
9. a kind of manufacture craft of p-type PERC double-side solar cell according to claim 1, which is characterized in that step is 2.
In, 110 ± 20 ohm of P diffused sheet resistance, 60 ± 20 ohm of B diffused sheet resistance.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993723A (en) * | 2019-10-16 | 2020-04-10 | 晋能光伏技术有限责任公司 | Preparation method of high-quality photovoltaic crystalline silicon cell |
| CN112382698A (en) * | 2020-10-30 | 2021-02-19 | 山西潞安太阳能科技有限责任公司 | Single crystal PERC-SE double-sided battery manufacturing method suitable for alkali polishing process |
| CN113421947A (en) * | 2021-06-21 | 2021-09-21 | 苏州潞能能源科技有限公司 | Double-sided solar cell manufacturing process |
| CN115728273A (en) * | 2021-08-31 | 2023-03-03 | 环晟光伏(江苏)有限公司 | Method for representing solar cell metal recombination by using PL (PL) |
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| EP2608280A2 (en) * | 2011-12-23 | 2013-06-26 | Lg Electronics Inc. | Method for manufacturing a solar cell comprising ion implantation and selective activation of emitter regions via laser treatment |
| CN103296093A (en) * | 2012-02-23 | 2013-09-11 | Lg电子株式会社 | Solar cell and method for manufacturing the same |
| CN103474482A (en) * | 2012-06-05 | 2013-12-25 | Lg电子株式会社 | Solar cell and method for manufacturing the same |
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| EP2608280A2 (en) * | 2011-12-23 | 2013-06-26 | Lg Electronics Inc. | Method for manufacturing a solar cell comprising ion implantation and selective activation of emitter regions via laser treatment |
| CN103296093A (en) * | 2012-02-23 | 2013-09-11 | Lg电子株式会社 | Solar cell and method for manufacturing the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110993723A (en) * | 2019-10-16 | 2020-04-10 | 晋能光伏技术有限责任公司 | Preparation method of high-quality photovoltaic crystalline silicon cell |
| CN112382698A (en) * | 2020-10-30 | 2021-02-19 | 山西潞安太阳能科技有限责任公司 | Single crystal PERC-SE double-sided battery manufacturing method suitable for alkali polishing process |
| CN113421947A (en) * | 2021-06-21 | 2021-09-21 | 苏州潞能能源科技有限公司 | Double-sided solar cell manufacturing process |
| CN115728273A (en) * | 2021-08-31 | 2023-03-03 | 环晟光伏(江苏)有限公司 | Method for representing solar cell metal recombination by using PL (PL) |
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Application publication date: 20190618 |