ES2096008T3 - Procedimiento para la generacion de estructuras de electrodos finas. - Google Patents
Procedimiento para la generacion de estructuras de electrodos finas.Info
- Publication number
- ES2096008T3 ES2096008T3 ES92119044T ES92119044T ES2096008T3 ES 2096008 T3 ES2096008 T3 ES 2096008T3 ES 92119044 T ES92119044 T ES 92119044T ES 92119044 T ES92119044 T ES 92119044T ES 2096008 T3 ES2096008 T3 ES 2096008T3
- Authority
- ES
- Spain
- Prior art keywords
- electrode structures
- generation
- procedure
- thin electrode
- solar cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000001465 metallisation Methods 0.000 abstract 1
- 230000002787 reinforcement Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
- H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
PARA LA GENERACION FINA DE ESTRUCTURAS DE ELECTRODOS CON BUENA ADHERENCIA SOBRE SUBSTRATOS SEMICONDUCTORES Y NO CONDUCTORES SE PROPONE, UN REFORZAMIENTO EN FORMA CONOCIDA DE LA METALIZACION DE PELICULA ESPESA APLICADA DE FORMA GALVANICA. EN UNA UTILIZACION DEL PROCESO SE GENERAN LOS CONTACTOS DE LA PARED DELANTERA DE LAS CELULAS SOLARES, Y CONTENIENDO CELULAS SOLARES CON UN GRADO DE ACCION MEJORADO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4137044 | 1991-11-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2096008T3 true ES2096008T3 (es) | 1997-03-01 |
Family
ID=6444531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92119044T Expired - Lifetime ES2096008T3 (es) | 1991-11-11 | 1992-11-06 | Procedimiento para la generacion de estructuras de electrodos finas. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0542148B1 (es) |
DE (1) | DE59207945D1 (es) |
ES (1) | ES2096008T3 (es) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5882435A (en) * | 1993-09-30 | 1999-03-16 | Siemens Solar Gmbh | Process for the metal coating of solar cells made of crystalline silicon |
DE4333426C1 (de) * | 1993-09-30 | 1994-12-15 | Siemens Solar Gmbh | Verfahren zur Metallisierung von Solarzellen aus kristallinem Silizium |
DE19525720C2 (de) * | 1995-07-14 | 1998-06-10 | Siemens Solar Gmbh | Herstellungsverfahren für eine Solarzelle ohne Vorderseitenmetallisierung |
JP4121928B2 (ja) * | 2003-10-08 | 2008-07-23 | シャープ株式会社 | 太陽電池の製造方法 |
DE102005038450A1 (de) | 2005-08-03 | 2007-02-08 | Gebr. Schmid Gmbh & Co. | Einrichtung zur Behandlung von Substraten, insbesondere zur Galvanisierung von Substraten |
DE102006013336A1 (de) * | 2006-03-21 | 2007-09-27 | Gp Solar Gmbh | Kontaktierungsverfahren für Halbleitermaterial sowie Halbleiterbauelement |
CN105789378A (zh) | 2008-01-23 | 2016-07-20 | 苏威氟有限公司 | 用于生产太阳能电池的方法 |
EP2234166A1 (de) | 2009-03-27 | 2010-09-29 | KIOTO Photovoltaics GmbH | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
DE102009018360A1 (de) | 2009-04-23 | 2010-11-04 | Rena Gmbh | Verfahren und Vorrichtung zur elektrolytischen Behandlung von Solarzellen |
DE102009022337A1 (de) | 2009-05-13 | 2010-11-18 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Behandlung eines Substrats |
DE102009038141A1 (de) | 2009-08-13 | 2011-02-17 | Gebr. Schmid Gmbh & Co. | Verfahren zur Herstellung einer Emitter-Elektrode auf eine kristalline Siliziumsolarzelle und entsprechende Siliziumsolarzelle |
EP2478570A2 (en) | 2009-09-18 | 2012-07-25 | Solvay Fluor GmbH | Process for the manufacture of wafers for solar cells at ambient pressure |
EP3038169A1 (en) | 2014-12-22 | 2016-06-29 | Solvay SA | Process for the manufacture of solar cells |
CN114883027B (zh) * | 2022-05-05 | 2023-09-01 | 潮州三环(集团)股份有限公司 | 一种厚膜电阻浆料 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3666639A (en) * | 1969-10-30 | 1972-05-30 | North American Rockwell | Method for coating metals or insulating substrates having a vitreous binder |
DE68918565T2 (de) * | 1988-06-10 | 1995-03-09 | Mobil Solar Energy Corp | Verfahren zur herstellung von sonnenzellenkontakten. |
-
1992
- 1992-11-06 EP EP92119044A patent/EP0542148B1/de not_active Expired - Lifetime
- 1992-11-06 DE DE59207945T patent/DE59207945D1/de not_active Expired - Fee Related
- 1992-11-06 ES ES92119044T patent/ES2096008T3/es not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE59207945D1 (de) | 1997-03-06 |
EP0542148A1 (de) | 1993-05-19 |
EP0542148B1 (de) | 1997-01-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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