JP6546889B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP6546889B2 JP6546889B2 JP2016175410A JP2016175410A JP6546889B2 JP 6546889 B2 JP6546889 B2 JP 6546889B2 JP 2016175410 A JP2016175410 A JP 2016175410A JP 2016175410 A JP2016175410 A JP 2016175410A JP 6546889 B2 JP6546889 B2 JP 6546889B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 48
- 238000005530 etching Methods 0.000 claims description 37
- 229910052731 fluorine Inorganic materials 0.000 claims description 37
- 239000011737 fluorine Substances 0.000 claims description 37
- 239000000203 mixture Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 41
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 35
- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 description 33
- 229910052786 argon Inorganic materials 0.000 description 33
- 210000002381 plasma Anatomy 0.000 description 31
- 210000004027 cell Anatomy 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 229910052734 helium Inorganic materials 0.000 description 11
- 239000001307 helium Substances 0.000 description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000008240 homogeneous mixture Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical class FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 150000003018 phosphorus compounds Chemical class 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- HXELGNKCCDGMMN-UHFFFAOYSA-N [F].[Cl] Chemical group [F].[Cl] HXELGNKCCDGMMN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002894 chemical waste Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012025 fluorinating agent Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002062 proliferating effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
多結晶シリコンブロックから切断したホウ素ドープシリコンウェーハは、縁部に亀裂を有する。ウェーハをプラズマチャンバ内に移送する。チャンバを空にし、フッ化カルボニルを0.4mbarの圧力までチャンバ内に導入し、プラズマを開放させる。プラズマ処理の間、当初鋭角だった亀裂は、増殖しないキーホール様の構造へと変形させられる。この時点でウェーハはもはや無用ではなく太陽電池を得るためのさらなる処理(リンでのドーピング、電極の付着など)のために使用可能である。
ホウ素ドープシリコンウェーハをPOCl3と接触させ、960〜1000℃まで加熱してリン化合物をP2O5に変換させる。副反応として、リン−シリカガラス様コーティングが形成される。このガラス様コーティングを除去するために、ウェーハをプラズマ処理チャンバ内に置き、チャンバを真空にし、0.4mbarの圧力が達成されるまで反応器内に無希釈のフッ化カルボニルと導入する。その後プラズマを開放させる。ガラス様のコーティングがエッチングにより除去されると直ちにプロセスを停止させる。
実施例4を反復するが、今度は、20体積%のフッ素、10体積%の窒素および70体積%のアルゴンからなる混合物を適用する。ガラス様コーティングをエッチングにより除去する。
無希釈のフッ化カルボニルでエッチングして反射性を低くしたウェーハをさらに処理して、欧州特許出願公開第A−0542148号明細書で記述されている通りに電極を適用する。銀そして無機結合剤として酸化鉛および二酸化ケイ素を含有するぺーストを、電極構造の所望のパターンにしたがってスクリーン印刷によりウェーハの表側に適用する。裏側には、さらにアルミニウムを含有する類似の電極ペーストを適用する。その後、800℃前後でウェーハを焼成する。次に塩化銀およびチオ硫酸ナトリウムを含む浴中で、パターンをメッキする。これは、特に3頁53行目から5頁23行目までに記述されている通りに行われる。
米国特許第5688415号明細書、第5欄60行目から第9欄4行目までに記述されている通りに大型フラットパネルディスプレイ上でシリコントランジスタを形成させる。例えばインジウムスズ酸化物または酸化ケイ素などの1つ以上の透明電極材料製の被覆フィルムが、ガラス基板に提供される。既定の開口部を有するフォトレジストでコーティングを被覆する。基盤をプラズマチャンバ内にいれ、フォトリトグラフィマスクのパターンを、ガラス基板上のフィルムまで掃引により転写する。その後のステップにおいてエッチングを行なう。このステップでは、60重量%のフッ化カルボニル40重量%のアルゴンの混合物を適用する。過剰エッチングを防ぐために、計算用ハードウェアおよび適切なソフトウェアを用いて、プラズマ滞留時間バージョン位置マップを生成する。
Claims (6)
- シリコンウェーハから太陽電池を製造する方法であって、フッ素及び窒素の混合物から成るエッチングガスで前記シリコンウェーハをエッチングするステップを含み、前記フッ素の含有量が1体積%以上かつ22体積%以下であり、前記シリコンウェーハの表面をエッチングして前記表面を粗面化する、方法。
- N型ドープコーティングを伴うP型ドープシリコンウェーハが処理される、請求項1に記載の方法。
- 少なくとも一つの亀裂を有するウェーハがエッチングされる、請求項1に記載の方法。
- リン‐ガラス様コーティングを有するウェーハがエッチングされる、請求項1に記載の方法。
- エッチングの後に前記シリコンウェーハに対して接点電極が適用される、請求項1から4のいずれか一項に記載の方法。
- 請求項1から5のいずれか一項に記載の方法によって製造された二つ以上の太陽電池を組立てる、ソーラーパネルの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2295808P | 2008-01-23 | 2008-01-23 | |
US61/022,958 | 2008-01-23 |
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JP2014245878A Division JP2015057858A (ja) | 2008-01-23 | 2014-12-04 | 太陽電池の製造方法 |
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JP2018127406A Division JP2018152615A (ja) | 2008-01-23 | 2018-07-04 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017017331A JP2017017331A (ja) | 2017-01-19 |
JP6546889B2 true JP6546889B2 (ja) | 2019-07-17 |
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JP2010543393A Pending JP2011510501A (ja) | 2008-01-23 | 2008-04-28 | 太陽電池の製造方法 |
JP2014245878A Pending JP2015057858A (ja) | 2008-01-23 | 2014-12-04 | 太陽電池の製造方法 |
JP2016175410A Expired - Fee Related JP6546889B2 (ja) | 2008-01-23 | 2016-09-08 | 太陽電池の製造方法 |
JP2018127406A Pending JP2018152615A (ja) | 2008-01-23 | 2018-07-04 | 太陽電池の製造方法 |
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2949237B1 (fr) * | 2009-08-24 | 2011-09-30 | Ecole Polytech | Procede de nettoyage de la surface d'un substrat de silicium |
WO2011032983A2 (en) | 2009-09-18 | 2011-03-24 | Solvay Fluor Gmbh | Process for the manufacture of wafers for solar cells at ambient pressure |
CN102754201A (zh) * | 2009-10-26 | 2012-10-24 | 苏威氟有限公司 | 用于生产tft基质的蚀刻方法 |
WO2011071937A2 (en) * | 2009-12-07 | 2011-06-16 | Applied Materials, Inc. | Method of cleaning and forming a negatively charged passivation layer over a doped region |
DE112011101134T5 (de) * | 2010-03-30 | 2013-01-10 | Applied Materials, Inc. | Verfahren zum Bilden einer negativ geladenen Passivierungsschicht über einem verteilten p-dotierten Bereich |
TWI586842B (zh) | 2010-09-15 | 2017-06-11 | 首威公司 | 氟之製造工廠及使用彼之方法 |
KR20130111554A (ko) | 2010-09-15 | 2013-10-10 | 솔베이(소시에떼아노님) | 가스로부터 f2 및/또는 of2를 제거시키는 방법 |
WO2013024041A1 (en) | 2011-08-17 | 2013-02-21 | Solvay Sa | Electrolytic process for the manufacture of fluorine and an apparatus therefor |
EP2860287A1 (en) | 2013-10-11 | 2015-04-15 | Solvay SA | Improved electrolytic cell |
EP2860288A1 (en) | 2013-10-11 | 2015-04-15 | Solvay SA | Improved electrolytic cell |
EP2944385A1 (en) * | 2014-05-12 | 2015-11-18 | Solvay SA | A process for etching and chamber cleaning and a gas therefor |
EP3038169A1 (en) * | 2014-12-22 | 2016-06-29 | Solvay SA | Process for the manufacture of solar cells |
EP3104418B8 (de) | 2015-06-08 | 2018-04-04 | Meyer Burger (Germany) GmbH | Verfahren und vorrichtung zum texturieren einer siliziumoberfläche |
KR102575017B1 (ko) | 2016-11-17 | 2023-09-05 | 삼성디스플레이 주식회사 | 유리 기판의 결함 검출 방법 |
CN108550613B (zh) * | 2018-05-30 | 2020-12-18 | 信利光电股份有限公司 | 一种显示模组 |
DE102021200627A1 (de) * | 2021-01-25 | 2022-08-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zur Herstellung einer Solarzelle |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4141811A (en) | 1978-04-24 | 1979-02-27 | Atlantic Richfield Company | Plasma etching process for the manufacture of solar cells |
US4249957A (en) | 1979-05-30 | 1981-02-10 | Taher Daud | Copper doped polycrystalline silicon solar cell |
JPH0646630B2 (ja) * | 1985-06-07 | 1994-06-15 | 株式会社日立製作所 | プラズマ処理方法 |
US4731158A (en) | 1986-09-12 | 1988-03-15 | International Business Machines Corporation | High rate laser etching technique |
DE3725346A1 (de) | 1987-07-30 | 1989-02-09 | Nukem Gmbh | Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle |
JPH0362968A (ja) | 1989-07-31 | 1991-03-19 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH03138082A (ja) * | 1989-10-24 | 1991-06-12 | Furukawa Alum Co Ltd | 気相ろう付方法 |
US5317432A (en) * | 1991-09-04 | 1994-05-31 | Sony Corporation | Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel |
ES2096008T3 (es) | 1991-11-11 | 1997-03-01 | Solar Gmbh Siemens | Procedimiento para la generacion de estructuras de electrodos finas. |
JP3186264B2 (ja) * | 1992-04-23 | 2001-07-11 | ソニー株式会社 | ドライエッチング方法 |
JP3109253B2 (ja) * | 1992-06-29 | 2000-11-13 | ソニー株式会社 | ドライエッチング方法 |
RU2065226C1 (ru) | 1993-07-27 | 1996-08-10 | Институт микроэлектроники РАН | Способ изготовления низкоомного контакта к кремнию |
US5688415A (en) | 1995-05-30 | 1997-11-18 | Ipec Precision, Inc. | Localized plasma assisted chemical etching through a mask |
DE19522539C2 (de) | 1995-06-21 | 1997-06-12 | Fraunhofer Ges Forschung | Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben |
JPH09102625A (ja) | 1995-07-28 | 1997-04-15 | Kyocera Corp | 太陽電池素子の製造方法 |
JPH10223614A (ja) * | 1997-02-12 | 1998-08-21 | Daikin Ind Ltd | エッチングガスおよびクリーニングガス |
US20010008227A1 (en) | 1997-08-08 | 2001-07-19 | Mitsuru Sadamoto | Dry etching method of metal oxide/photoresist film laminate |
US6635185B2 (en) | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
US6060400A (en) | 1998-03-26 | 2000-05-09 | The Research Foundation Of State University Of New York | Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide |
US5981398A (en) * | 1998-04-10 | 1999-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hard mask method for forming chlorine containing plasma etched layer |
JP2000012517A (ja) | 1998-06-26 | 2000-01-14 | Ulvac Corp | 表面処理方法 |
US6235214B1 (en) * | 1998-12-03 | 2001-05-22 | Applied Materials, Inc. | Plasma etching of silicon using fluorinated gas mixtures |
US6203671B1 (en) * | 1999-03-10 | 2001-03-20 | Alliedsignal Inc. | Method of producing fluorinated compounds |
JP2001028362A (ja) | 1999-07-15 | 2001-01-30 | Toshiba Corp | 半導体装置の製造方法及び製造装置 |
JP4339990B2 (ja) | 2000-08-31 | 2009-10-07 | 京セラ株式会社 | シリコン基板の粗面化法 |
JP4112198B2 (ja) | 2000-09-11 | 2008-07-02 | 財団法人地球環境産業技術研究機構 | クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法 |
JP2002329710A (ja) | 2001-04-26 | 2002-11-15 | Kyocera Corp | シリコン基板の粗面化法 |
JP4721557B2 (ja) | 2001-05-29 | 2011-07-13 | 京セラ株式会社 | 太陽電池用基板の粗面化法 |
JP4340031B2 (ja) * | 2001-09-26 | 2009-10-07 | 京セラ株式会社 | 太陽電池用基板の粗面化方法 |
JP4104320B2 (ja) * | 2001-11-16 | 2008-06-18 | セントラル硝子株式会社 | 二フッ化カルボニルの製造方法 |
JP4467218B2 (ja) | 2001-12-25 | 2010-05-26 | 京セラ株式会社 | 太陽電池用基板の粗面化法 |
JP4129617B2 (ja) * | 2002-04-19 | 2008-08-06 | ダイキン工業株式会社 | Cof2の製造方法 |
JP2003347660A (ja) | 2002-05-30 | 2003-12-05 | Sharp Corp | 窒化物半導体装置の製造方法 |
JP2004134577A (ja) * | 2002-10-10 | 2004-04-30 | Seiko Epson Corp | 半導体薄膜の製造方法、薄膜トランジスタ、半導体装置、薄膜太陽電池、複合半導体装置の製造方法、電気光学装置及び電子機器 |
RU2250536C1 (ru) | 2004-01-08 | 2005-04-20 | Открытое акционерное общество "Сатурн" | Солнечная батарея |
US20060016459A1 (en) * | 2004-05-12 | 2006-01-26 | Mcfarlane Graham | High rate etching using high pressure F2 plasma with argon dilution |
JP2006049817A (ja) | 2004-07-07 | 2006-02-16 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
US7581549B2 (en) | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
US20060062914A1 (en) * | 2004-09-21 | 2006-03-23 | Diwakar Garg | Apparatus and process for surface treatment of substrate using an activated reactive gas |
US7317434B2 (en) * | 2004-12-03 | 2008-01-08 | Dupont Displays, Inc. | Circuits including switches for electronic devices and methods of using the electronic devices |
US20060183055A1 (en) * | 2005-02-15 | 2006-08-17 | O'neill Mark L | Method for defining a feature on a substrate |
KR20080017290A (ko) * | 2005-05-24 | 2008-02-26 | 마쯔시다덴기산교 가부시키가이샤 | 드라이에칭방법, 미세구조 형성방법, 몰드 및 그 제조방법 |
JP2006332509A (ja) | 2005-05-30 | 2006-12-07 | Kyocera Corp | 粗面化法 |
DE102005040596B4 (de) | 2005-06-17 | 2009-02-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Entfernung einer dotierten Oberflächenschicht an Rückseiten von kristallinen Silizium-Solarwafern |
US20060286774A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
WO2007049347A1 (ja) | 2005-10-26 | 2007-05-03 | Shinryo Corporation | 太陽電池用シリコン基板の低反射率加工方法及び太陽電池用シリコン基板 |
JP2007142021A (ja) * | 2005-11-16 | 2007-06-07 | Seiko Epson Corp | 順スタガ構造薄膜トランジスタの製造方法 |
JP5064767B2 (ja) * | 2005-11-29 | 2012-10-31 | 京セラ株式会社 | 太陽電池素子の製造方法 |
RU2301477C1 (ru) | 2005-12-15 | 2007-06-20 | Государственное образовательное учреждение высшего профессионального образования Самарский государственный аэрокосмический университет им. акад. С.П. Королева | Способ увеличения чувствительности и быстродействия фотоэлектрического преобразователя перемещений в код |
KR20080109778A (ko) * | 2006-03-13 | 2008-12-17 | 나노그램 코포레이션 | 얇은 실리콘 또는 게르마늄 시트 및 얇은 시트로 형성된 광전지 |
JP2007250985A (ja) * | 2006-03-17 | 2007-09-27 | Showa Denko Kk | プラズマエッチング方法 |
KR20090015054A (ko) | 2006-04-10 | 2009-02-11 | 솔베이 플루오르 게엠베하 | 에칭 방법 |
JP4153961B2 (ja) * | 2006-04-25 | 2008-09-24 | 積水化学工業株式会社 | シリコンのエッチング方法 |
WO2008043827A2 (de) | 2006-10-12 | 2008-04-17 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
WO2009018509A1 (en) * | 2007-08-02 | 2009-02-05 | Applied Materials, Inc. | Thin film transistors using thin film semiconductor materials |
WO2009080615A2 (en) | 2007-12-21 | 2009-07-02 | Solvay Fluor Gmbh | Process for the production of microelectromechanical systems |
WO2011032983A2 (en) | 2009-09-18 | 2011-03-24 | Solvay Fluor Gmbh | Process for the manufacture of wafers for solar cells at ambient pressure |
CN102754201A (zh) | 2009-10-26 | 2012-10-24 | 苏威氟有限公司 | 用于生产tft基质的蚀刻方法 |
US20120214312A1 (en) | 2009-10-30 | 2012-08-23 | Solvay Sa | Method of plasma etching and plasma chamber cleaning using F2 and COF2 |
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JP2018152615A (ja) | 2018-09-27 |
AU2008348838A1 (en) | 2009-07-30 |
KR20180033600A (ko) | 2018-04-03 |
EP2235757A2 (en) | 2010-10-06 |
IL206859A (en) | 2016-12-29 |
JP2011510501A (ja) | 2011-03-31 |
KR20150063581A (ko) | 2015-06-09 |
BRPI0822196A2 (pt) | 2015-06-23 |
TWI595675B (zh) | 2017-08-11 |
RU2010134889A (ru) | 2012-02-27 |
CN105789378A (zh) | 2016-07-20 |
WO2009092453A2 (en) | 2009-07-30 |
WO2009092453A3 (en) | 2009-12-10 |
KR20100113588A (ko) | 2010-10-21 |
US10453986B2 (en) | 2019-10-22 |
RU2476959C2 (ru) | 2013-02-27 |
TW201003935A (en) | 2010-01-16 |
JP2015057858A (ja) | 2015-03-26 |
US20100288330A1 (en) | 2010-11-18 |
MX2010008075A (es) | 2010-08-04 |
EP2235757B1 (en) | 2016-06-08 |
JP2017017331A (ja) | 2017-01-19 |
ZA201005208B (en) | 2012-01-25 |
IL206859A0 (en) | 2010-12-30 |
CN101926010A (zh) | 2010-12-22 |
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