KR20140067079A - 가스들에 대해 향상된 불투과성을 제공하는 다층 구조 - Google Patents

가스들에 대해 향상된 불투과성을 제공하는 다층 구조 Download PDF

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KR20140067079A
KR20140067079A KR1020147008430A KR20147008430A KR20140067079A KR 20140067079 A KR20140067079 A KR 20140067079A KR 1020147008430 A KR1020147008430 A KR 1020147008430A KR 20147008430 A KR20147008430 A KR 20147008430A KR 20140067079 A KR20140067079 A KR 20140067079A
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layer
sio
type
substrate
stack
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Korean (ko)
Inventor
스테판 크로스
니콜 알베롤라
장-폴 가랑데
아르노 모를리에
Original Assignee
꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/724—Permeability to gases, adsorption
    • B32B2307/7242—Non-permeable
    • B32B2307/7244—Oxygen barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Chemically Coating (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020147008430A 2011-09-26 2012-09-24 가스들에 대해 향상된 불투과성을 제공하는 다층 구조 Ceased KR20140067079A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1158570A FR2980394B1 (fr) 2011-09-26 2011-09-26 Structure multicouche offrant une etancheite aux gaz amelioree
FR1158570 2011-09-26
PCT/EP2012/068766 WO2013045393A1 (fr) 2011-09-26 2012-09-24 Structure multicouche offrant une etancheite aux gaz amelioree

Publications (1)

Publication Number Publication Date
KR20140067079A true KR20140067079A (ko) 2014-06-03

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KR1020147008430A Ceased KR20140067079A (ko) 2011-09-26 2012-09-24 가스들에 대해 향상된 불투과성을 제공하는 다층 구조

Country Status (8)

Country Link
US (1) US9771654B2 (https=)
EP (1) EP2761055B1 (https=)
JP (1) JP6124896B2 (https=)
KR (1) KR20140067079A (https=)
CN (1) CN103958734B (https=)
BR (1) BR112014007133A2 (https=)
FR (1) FR2980394B1 (https=)
WO (1) WO2013045393A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2988520B1 (fr) * 2012-03-23 2014-03-14 Arkema France Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique
FR2997763B1 (fr) 2012-11-06 2015-01-16 Commissariat Energie Atomique Dispositif et procede d'estimation d'un flux de gaz dans une enceinte maintenue en depression vis-a-vis du gaz
US11114332B2 (en) * 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
WO2019049735A1 (ja) 2017-09-11 2019-03-14 東京エレクトロン株式会社 絶縁膜の成膜方法、基板処理装置及び基板処理システム
CN109821485B (zh) * 2019-04-11 2021-12-10 湖北科技学院 用于动力锂电池热调控的相变储热胶囊的制备方法

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051308A (en) * 1987-08-24 1991-09-24 General Electric Company Abrasion-resistant plastic articles
US5472827A (en) * 1991-12-30 1995-12-05 Sony Corporation Method of forming a resist pattern using an anti-reflective layer
JP2526766B2 (ja) 1992-06-15 1996-08-21 東洋製罐株式会社 ガス遮断性積層プラスチックス材
JPH0792337A (ja) * 1993-09-27 1995-04-07 Hitachi Cable Ltd ポリマコア光導波路およびその製造方法
JPH07206410A (ja) 1994-01-17 1995-08-08 Toshiba Corp シリコン窒化膜の形成方法
US5508368A (en) * 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
US5846649A (en) * 1994-03-03 1998-12-08 Monsanto Company Highly durable and abrasion-resistant dielectric coatings for lenses
JP3414107B2 (ja) 1995-02-20 2003-06-09 株式会社日立製作所 半導体装置の製造方法
US6379014B1 (en) * 2000-04-27 2002-04-30 N & K Technology, Inc. Graded anti-reflective coatings for photolithography
JP5291275B2 (ja) * 2000-07-27 2013-09-18 有限会社コンタミネーション・コントロール・サービス コーティング膜が施された部材及びコーティング膜の製造方法
US6614977B2 (en) * 2001-07-12 2003-09-02 Little Optics, Inc. Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides
EP1329946A3 (en) * 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
JP4097947B2 (ja) * 2002-01-24 2008-06-11 住友ベークライト株式会社 透明水蒸気バリアフィルム
CN1195315C (zh) * 2002-03-15 2005-03-30 台湾积体电路制造股份有限公司 多层式电介质抗反射层及其形成方法
US20030203210A1 (en) 2002-04-30 2003-10-30 Vitex Systems, Inc. Barrier coatings and methods of making same
US20070147766A1 (en) * 2003-11-12 2007-06-28 Mattsson Kent E Low loss silicon oxynitride optical waveguide, a method of its manufacture and an optical device
WO2006033233A1 (ja) * 2004-09-21 2006-03-30 Konica Minolta Holdings, Inc. 透明ガスバリア性フィルム
JP2006133525A (ja) * 2004-11-05 2006-05-25 Canon Inc 電子写真感光体及びこれを用いた電子写真装置
WO2006064918A1 (ja) * 2004-12-17 2006-06-22 The University Of Tokushima 基材表面の改質方法、改質された表面を有する基材およびその製造方法
US8216684B2 (en) * 2005-02-01 2012-07-10 Mitsu Chemicals, Inc. Method for bonding members, composite film and use thereof
EP1888812A1 (de) * 2005-04-11 2008-02-20 Alcan Technology & Management Ltd. Verfahren zur verbesserung der barriereeigenschaften keramischer sperrschichten
JP4698310B2 (ja) * 2005-07-11 2011-06-08 富士フイルム株式会社 ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子
DE102005034817A1 (de) * 2005-07-26 2007-02-01 Clariant International Limited Verfahren zur Herstellung einer dünnen glasartigen Beschichtung auf Substraten zur Verringerung der Gaspermeation
KR20080019628A (ko) * 2005-08-10 2008-03-04 가부시키가이샤 씽크. 라보라토리 닥터 블레이드
JP2007237588A (ja) * 2006-03-09 2007-09-20 Kyodo Printing Co Ltd ガスバリア性フィルム及びその製造方法
US8586189B2 (en) * 2007-09-19 2013-11-19 Fujifilm Corporation Gas-barrier film and organic device comprising same
TWI493609B (zh) * 2007-10-23 2015-07-21 半導體能源研究所股份有限公司 半導體基板、顯示面板及顯示裝置的製造方法
JP2009133000A (ja) * 2007-10-30 2009-06-18 Fujifilm Corp シリコン窒化物膜及びそれを用いたガスバリア膜、薄膜素子
JP5405031B2 (ja) * 2008-03-06 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリカ質膜の製造に用いる浸漬用溶液およびそれを用いたシリカ質膜の製造法
JP2009255040A (ja) * 2008-03-25 2009-11-05 Kyodo Printing Co Ltd フレキシブルガスバリアフィルムおよびその製造方法
JP5305476B2 (ja) * 2008-08-29 2013-10-02 独立行政法人産業技術総合研究所 酸化ケイ素薄膜または酸窒化ケイ素化合物薄膜の製造方法およびこの方法で得られる薄膜
KR101040175B1 (ko) * 2008-12-11 2011-06-16 한국전자통신연구원 연성 기판 및 그의 제조 방법
KR101489618B1 (ko) * 2009-03-17 2015-02-04 린텍 가부시키가이샤 성형체, 그 제조 방법, 전자 디바이스 부재 및 전자 디바이스
DE102009013904A1 (de) * 2009-03-19 2010-09-23 Clariant International Limited Solarzellen mit einer Verkapselungsschicht auf Basis von Polysilazan
US20120107607A1 (en) * 2009-07-17 2012-05-03 Mitsui Chemicals, Inc. Multilayered material and method of producing the same
JP2011044453A (ja) * 2009-08-19 2011-03-03 Konica Minolta Holdings Inc 太陽電池用バックシート及び太陽電池モジュール
JP5585267B2 (ja) 2009-08-26 2014-09-10 コニカミノルタ株式会社 ガスバリア性フィルム、その製造方法、及びそれを用いた有機光電変換素子
JP5410207B2 (ja) * 2009-09-04 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液
FR2949775B1 (fr) * 2009-09-10 2013-08-09 Saint Gobain Performance Plast Substrat de protection pour dispositif collecteur ou emetteur de rayonnement
JP5394867B2 (ja) * 2009-09-17 2014-01-22 富士フイルム株式会社 ガスバリア膜およびガスバリアフィルム
WO2011043315A1 (ja) * 2009-10-05 2011-04-14 コニカミノルタホールディングス株式会社 ガスバリア性フィルム、ガスバリア性フィルムの製造方法、該ガスバリア性フィルムを有する有機光電変換素子及び該有機光電変換素子を有する太陽電池
JP5849703B2 (ja) * 2009-11-19 2016-02-03 コニカミノルタ株式会社 ガスバリア性フィルムの製造方法、有機光電変換素子の製造方法及び有機エレクトロルミネッセンス素子の製造方法
JP5736644B2 (ja) * 2009-12-11 2015-06-17 コニカミノルタ株式会社 ガスバリア性フィルム、その製造方法及びそれを用いた有機光電変換素子
FR2953990B1 (fr) 2009-12-14 2013-01-11 Commissariat Energie Atomique Dispositif d'encapsulation a etancheite amelioree
JP5821637B2 (ja) * 2009-12-14 2015-11-24 コニカミノルタ株式会社 ガスバリアフィルム、ガスバリアフィルムの製造方法及び有機光電変換素子
JP5381734B2 (ja) * 2010-01-14 2014-01-08 コニカミノルタ株式会社 バリア性フィルム及び有機電子デバイス
JP5445179B2 (ja) * 2010-02-01 2014-03-19 コニカミノルタ株式会社 ガスバリア性フィルム、ガスバリア性フィルムの製造方法、有機電子デバイス
JP5515847B2 (ja) * 2010-02-24 2014-06-11 コニカミノルタ株式会社 ガスバリアフィルムの製造方法
JP5447022B2 (ja) * 2010-03-11 2014-03-19 コニカミノルタ株式会社 ガスバリア性フィルム、その製造方法及びそのガスバリア性フィルムを用いた有機光電変換素子
JP2012004349A (ja) * 2010-06-17 2012-01-05 Az Electronic Materials Kk シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
JP5540949B2 (ja) 2010-07-07 2014-07-02 コニカミノルタ株式会社 ガスバリア性フィルム、及び有機光電変換素子、有機エレクトロルミネッセンス素子
WO2012008277A1 (ja) 2010-07-14 2012-01-19 コニカミノルタホールディングス株式会社 ガスバリアフィルムの製造方法、ガスバリアフィルムおよび有機光電変換素子
KR20120008360A (ko) * 2010-07-16 2012-01-30 삼성모바일디스플레이주식회사 플렉서블 디스플레이용 기판 및 그 제조 방법
JP5747915B2 (ja) * 2010-07-22 2015-07-15 コニカミノルタ株式会社 ガスバリアフィルムの製造方法
US9359505B2 (en) * 2010-07-27 2016-06-07 Konica Minolta Holdings, Inc. Gas barrier film, process for production of gas barrier film, and electronic device
JP5853954B2 (ja) * 2010-08-25 2016-02-09 コニカミノルタ株式会社 ガスバリア性フィルムの製造方法
TWI457235B (zh) * 2010-09-21 2014-10-21 Lintec Corp A gas barrier film, a manufacturing method thereof, an electronic device element, and an electronic device
KR101526083B1 (ko) * 2010-12-06 2015-06-04 코니카 미놀타 가부시키가이샤 가스 배리어성 필름, 가스 배리어성 필름의 제조 방법 및 전자 디바이스
EP2660041B1 (en) * 2010-12-27 2015-06-17 Konica Minolta, Inc. Gas-barrier film and electronic device
EP2660042B1 (en) * 2010-12-27 2015-04-29 Konica Minolta, Inc. Method for manufacturing gas-barrier film, gas-barrier film, and electronic device
WO2012176291A1 (ja) * 2011-06-22 2012-12-27 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
EP2724854A4 (en) * 2011-06-27 2015-03-25 Konica Minolta Inc GASPERRFILM, METHOD FOR THE PRODUCTION OF GASPERRFILMS AND ELECTRONIC DEVICE
EP2700500A4 (en) * 2011-09-08 2015-02-25 Lintec Corp MODIFIED POLYSILAZANE FILM AND PROCESS FOR PRODUCING GAS BARRIER FILM
JP5835344B2 (ja) * 2011-11-24 2015-12-24 コニカミノルタ株式会社 ガスバリアーフィルム及び電子機器
JP5970197B2 (ja) * 2012-02-08 2016-08-17 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 無機ポリシラザン樹脂
JP6017256B2 (ja) * 2012-10-11 2016-10-26 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 ケイ素質緻密膜の形成方法
US20140117511A1 (en) * 2012-10-30 2014-05-01 Infineon Technologies Ag Passivation Layer and Method of Making a Passivation Layer

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CN103958734A (zh) 2014-07-30
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JP2014528857A (ja) 2014-10-30
CN103958734B (zh) 2016-12-21
WO2013045393A1 (fr) 2013-04-04
US9771654B2 (en) 2017-09-26
BR112014007133A2 (pt) 2017-04-11
FR2980394B1 (fr) 2013-10-18
EP2761055A1 (fr) 2014-08-06
US20140234602A1 (en) 2014-08-21

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