KR20110025526A - 가드링들을 갖는 반도체 칩들 및 그 제조방법들 - Google Patents
가드링들을 갖는 반도체 칩들 및 그 제조방법들 Download PDFInfo
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- KR20110025526A KR20110025526A KR1020090083632A KR20090083632A KR20110025526A KR 20110025526 A KR20110025526 A KR 20110025526A KR 1020090083632 A KR1020090083632 A KR 1020090083632A KR 20090083632 A KR20090083632 A KR 20090083632A KR 20110025526 A KR20110025526 A KR 20110025526A
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- Prior art keywords
- guard ring
- film
- insulating
- insulating film
- conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
- 메인 칩 영역 및 상기 메인 칩 영역을 둘러싸는 스크라이브 레인 영역을 구비하는 반도체 기판;상기 반도체 기판 상의 절연막; 및상기 스크라이브 레인 영역 내의 상기 절연막 내에 형성되어 상기 메인 칩 영역의 적어도 일 부분을 둘러싸는 가드링을 구비하되,상기 가드링은 상기 절연막의 취성(brittleness)보다 큰 취성을 갖는 반도체 칩.
- 제 1 항에 있어서,상기 가드링은 절연성 가드링인 것을 특징으로 하는 반도체 칩.
- 제 2 항에 있어서,상기 절연성 가드링은 다공성 절연막인 것을 특징으로 하는 반도체 칩.
- 제 3 항에 있어서,상기 다공성 절연막은 탄소, 수소, 질소 및 불소중 적어도 하나의 원소를 함유하는 절연막인 것을 특징으로 하는 반도체 칩.
- 제 4 항에 있어서,상기 다공성 절연막은 FSG(fuorosilicate glass)막, SiOC막, SiOCH막, SiLK막 및 SiN막중 어느 하나인 것을 특징으로 하는 반도체 칩.
- 메인 칩 영역 및 상기 메인 칩 영역을 둘러싸는 스크라이브 레인 영역을 구비하는 반도체 기판 상에 절연막을 형성하고,상기 스크라이브 레인 영역 내의 상기 절연막 내에 상기 메인 칩 영역의 적어도 일 부분을 둘러싸는 가드링을 형성하는 것을 포함하되,상기 가드링은 상기 절연막의 취성(brittleness)보다 큰 취성을 갖는 물질막으로 형성하는 반도체 칩의 제조방법.
- 제 6 항에 있어서,상기 가드링은 절연성 물질막으로 형성하는 것을 특징으로 하는 반도체 칩의 제조방법.
- 제 7 항에 있어서,상기 절연성 가드링은 다공성 절연막으로 형성하는 것을 특징으로 하는 반도체 칩의 제조방법.
- 제 8 항에 있어서,상기 다공성 절연막은 탄소, 수소, 질소 및 불소중 적어도 하나의 원소를 함유하는 절연막으로 형성하는 것을 특징으로 하는 반도체 칩의 제조방법.
- 제 9 항에 있어서,상기 다공성 절연막은 FSG(fuorosilicate glass)막, SiOC막, SiOCH막, SiLK막 및 SiN막중 어느 하나로 형성하는 것을 특징으로 하는 반도체 칩의 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090083632A KR101581431B1 (ko) | 2009-09-04 | 2009-09-04 | 가드링들을 갖는 반도체 칩들 및 그 제조방법들 |
US12/875,382 US8354735B2 (en) | 2009-09-04 | 2010-09-03 | Semiconductor chips having guard rings and methods of fabricating the same |
US13/741,466 US8623743B2 (en) | 2009-09-04 | 2013-01-15 | Semiconductor chips having guard rings and methods of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090083632A KR101581431B1 (ko) | 2009-09-04 | 2009-09-04 | 가드링들을 갖는 반도체 칩들 및 그 제조방법들 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110025526A true KR20110025526A (ko) | 2011-03-10 |
KR101581431B1 KR101581431B1 (ko) | 2015-12-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020090083632A Active KR101581431B1 (ko) | 2009-09-04 | 2009-09-04 | 가드링들을 갖는 반도체 칩들 및 그 제조방법들 |
Country Status (2)
Country | Link |
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US (2) | US8354735B2 (ko) |
KR (1) | KR101581431B1 (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150109554A (ko) * | 2014-03-20 | 2015-10-02 | 에스케이하이닉스 주식회사 | 반도체 칩 및 이를 갖는 반도체 패키지 |
US9252047B2 (en) | 2014-01-23 | 2016-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Interconnect arrangement with stress-reducing structure and method of fabricating the same |
KR20170122494A (ko) * | 2016-04-27 | 2017-11-06 | 삼성전자주식회사 | 반도체 장치, 반도체 칩 및 반도체 장치의 제조 방법 |
KR20200043813A (ko) * | 2018-10-18 | 2020-04-28 | 삼성전자주식회사 | 스크라이브 레인을 포함하는 반도체 칩 |
KR20200044357A (ko) * | 2018-10-19 | 2020-04-29 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
Families Citing this family (23)
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JP5532870B2 (ja) * | 2009-12-01 | 2014-06-25 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5630027B2 (ja) * | 2010-01-29 | 2014-11-26 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器、半導体装置 |
US9117831B2 (en) * | 2011-01-11 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Seal ring structure for integrated circuit chips |
JP5684654B2 (ja) * | 2011-06-20 | 2015-03-18 | 株式会社東芝 | 半導体チップ、半導体チップの製造方法、および半導体装置 |
US8704338B2 (en) | 2011-09-28 | 2014-04-22 | Infineon Technologies Ag | Chip comprising a fill structure |
KR101939240B1 (ko) * | 2011-11-25 | 2019-01-17 | 삼성전자 주식회사 | 반도체 패키지 |
CN106030768A (zh) * | 2014-02-25 | 2016-10-12 | 夏普株式会社 | 半导体器件 |
JP6296913B2 (ja) * | 2014-06-17 | 2018-03-20 | キヤノン株式会社 | 半導体装置の製造方法および構造体 |
CN105374765B (zh) * | 2014-09-02 | 2018-05-04 | 中芯国际集成电路制造(上海)有限公司 | 一种芯片密封环结构及其制作方法 |
JP2016058454A (ja) * | 2014-09-05 | 2016-04-21 | 株式会社東芝 | 半導体記憶装置 |
JP2016111285A (ja) * | 2014-12-10 | 2016-06-20 | 株式会社東芝 | 半導体装置 |
US10315915B2 (en) | 2015-07-02 | 2019-06-11 | Kionix, Inc. | Electronic systems with through-substrate interconnects and MEMS device |
US9659879B1 (en) * | 2015-10-30 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company | Semiconductor device having a guard ring |
US10157856B2 (en) * | 2016-05-31 | 2018-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Seal ring structure and fabrication method therefor |
KR102633112B1 (ko) | 2016-08-05 | 2024-02-06 | 삼성전자주식회사 | 반도체 소자 |
US10504859B2 (en) * | 2016-10-01 | 2019-12-10 | Intel Corporation | Electronic component guard ring |
DE102017122526B4 (de) * | 2016-12-28 | 2022-07-28 | Taiwan Semiconductor Manufacturing Co. Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen von dieser |
DE102017123846B4 (de) * | 2017-10-13 | 2020-03-12 | Infineon Technologies Austria Ag | Leistungshalbleiter-Die und Halbleiterwafer umfassend einen Oxid-Peeling Stopper und Verfahren zum Verarbeiten eines Halbleiterwafers |
US11049820B2 (en) * | 2018-07-30 | 2021-06-29 | Texas Instruments Incorporated | Crack suppression structure for HV isolation component |
KR102599050B1 (ko) | 2018-08-20 | 2023-11-06 | 삼성전자주식회사 | 반도체 칩의 제조 방법 |
US20210125910A1 (en) * | 2019-10-25 | 2021-04-29 | Nanya Technology Corporation | Semiconductor structure |
KR102776460B1 (ko) * | 2020-08-07 | 2025-03-10 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
KR20220068059A (ko) | 2020-11-18 | 2022-05-25 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 제조방법 |
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JP2007067372A (ja) * | 2005-08-03 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置 |
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JP5175066B2 (ja) | 2006-09-15 | 2013-04-03 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5106933B2 (ja) * | 2007-07-04 | 2012-12-26 | ラピスセミコンダクタ株式会社 | 半導体装置 |
US8334582B2 (en) * | 2008-06-26 | 2012-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protective seal ring for preventing die-saw induced stress |
US8580657B2 (en) * | 2008-09-23 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protecting sidewalls of semiconductor chips using insulation films |
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2009
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2010
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2013
- 2013-01-15 US US13/741,466 patent/US8623743B2/en active Active
Patent Citations (2)
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US9252047B2 (en) | 2014-01-23 | 2016-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Interconnect arrangement with stress-reducing structure and method of fabricating the same |
US9818666B2 (en) | 2014-01-23 | 2017-11-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect arrangement with stress-reducing structure and method of fabricating the same |
US10204843B2 (en) | 2014-01-23 | 2019-02-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect arrangement with stress-reducing structure and method of fabricating the same |
KR20150109554A (ko) * | 2014-03-20 | 2015-10-02 | 에스케이하이닉스 주식회사 | 반도체 칩 및 이를 갖는 반도체 패키지 |
KR20170122494A (ko) * | 2016-04-27 | 2017-11-06 | 삼성전자주식회사 | 반도체 장치, 반도체 칩 및 반도체 장치의 제조 방법 |
KR20200043813A (ko) * | 2018-10-18 | 2020-04-28 | 삼성전자주식회사 | 스크라이브 레인을 포함하는 반도체 칩 |
KR20200044357A (ko) * | 2018-10-19 | 2020-04-29 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US11784137B2 (en) | 2018-10-19 | 2023-10-10 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
US8354735B2 (en) | 2013-01-15 |
US8623743B2 (en) | 2014-01-07 |
US20110057297A1 (en) | 2011-03-10 |
US20130130472A1 (en) | 2013-05-23 |
KR101581431B1 (ko) | 2015-12-30 |
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