KR20100114037A - 향상된 가스 유동 분포를 가진 열 반응기 - Google Patents

향상된 가스 유동 분포를 가진 열 반응기 Download PDF

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Publication number
KR20100114037A
KR20100114037A KR1020107016045A KR20107016045A KR20100114037A KR 20100114037 A KR20100114037 A KR 20100114037A KR 1020107016045 A KR1020107016045 A KR 1020107016045A KR 20107016045 A KR20107016045 A KR 20107016045A KR 20100114037 A KR20100114037 A KR 20100114037A
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South Korea
Prior art keywords
substrate
processing
volume
gas flow
assembly
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Ceased
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KR1020107016045A
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English (en)
Korean (ko)
Inventor
밍-퀴(마이클) 트셍
노르만 탐
요시타카 요코타
아구스 탄드라
로버트 나바스카
메드란 베자트
선달 라마무르티
케달나쓰 산감
알렉산더 엔. 레네르
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20100114037A publication Critical patent/KR20100114037A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00—Forming, maintaining or circulating atmospheres in heating chambers
    • F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Formation Of Insulating Films (AREA)
KR1020107016045A 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기 Ceased KR20100114037A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1543507P 2007-12-20 2007-12-20
US61/015,435 2007-12-20

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020157013062A Division KR101677438B1 (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기
KR1020157031516A Division KR101586211B1 (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기

Publications (1)

Publication Number Publication Date
KR20100114037A true KR20100114037A (ko) 2010-10-22

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KR1020107016045A Ceased KR20100114037A (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기
KR1020157013062A Active KR101677438B1 (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기
KR1020157031516A Active KR101586211B1 (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기

Family Applications After (2)

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KR1020157013062A Active KR101677438B1 (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기
KR1020157031516A Active KR101586211B1 (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기

Country Status (6)

Country Link
US (3) US8056500B2 (enExample)
JP (3) JP5226082B2 (enExample)
KR (3) KR20100114037A (enExample)
CN (1) CN101896995B (enExample)
TW (1) TWI366217B (enExample)
WO (1) WO2009085992A2 (enExample)

Cited By (4)

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WO2013106552A1 (en) * 2012-01-13 2013-07-18 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR20160090681A (ko) * 2015-01-22 2016-08-01 주식회사 엘지실트론 에피택셜 웨이퍼의 성장을 위한 리액터의 재가동 준비 방법
CN107403717A (zh) * 2016-04-28 2017-11-28 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
KR20210131940A (ko) * 2016-04-28 2021-11-03 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 개선된 측면 주입 노즐 설계

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US10138551B2 (en) 2010-07-29 2018-11-27 GES Associates LLC Substrate processing apparatuses and systems
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WO2012115681A1 (en) * 2011-02-21 2012-08-30 Applied Materials, Inc. Ambient laminar gas flow distribution in laser processing systems
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CN105431928B (zh) * 2013-02-06 2018-02-16 应用材料公司 气体注入装置及并入气体注入装置的基板处理腔室
KR102127715B1 (ko) * 2013-08-09 2020-06-29 에스케이실트론 주식회사 에피텍셜 반응기
US9837250B2 (en) * 2013-08-30 2017-12-05 Applied Materials, Inc. Hot wall reactor with cooled vacuum containment
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
CN103928317B (zh) * 2014-04-28 2016-10-26 北京七星华创电子股份有限公司 提高工艺片成膜均匀性的方法
US9869017B2 (en) 2014-07-10 2018-01-16 Applied Materials, Inc. H2/O2 side inject to improve process uniformity for low temperature oxidation process
KR20160090698A (ko) * 2015-01-22 2016-08-01 주식회사 엘지실트론 에피택셜 웨이퍼의 성장을 위한 리액터의 재가동 준비 방법
CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室
KR102350588B1 (ko) * 2015-07-07 2022-01-14 삼성전자 주식회사 인젝터를 갖는 박막 형성 장치
US9958782B2 (en) * 2016-06-29 2018-05-01 Applied Materials, Inc. Apparatus for post exposure bake
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
JP6773880B2 (ja) 2017-02-23 2020-10-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、コンピュータプログラムおよび処理容器
KR101846509B1 (ko) * 2017-03-29 2018-04-09 (주)앤피에스 열원 장치 및 이를 구비하는 기판 처리 장치
JP6925213B2 (ja) 2017-09-22 2021-08-25 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
USD924825S1 (en) * 2018-01-24 2021-07-13 Applied Materials, Inc. Chamber inlet
US10636626B2 (en) * 2018-01-25 2020-04-28 Applied Materials, Inc. Dogbone inlet cone profile for remote plasma oxidation chamber
US11393703B2 (en) 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
US11486038B2 (en) * 2019-01-30 2022-11-01 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
CN110137111A (zh) * 2019-05-23 2019-08-16 德淮半导体有限公司 气体分配装置及其使用方法
KR102203878B1 (ko) * 2019-06-11 2021-01-15 한양대학교 산학협력단 기판 처리 장치 및 기판 처리 방법
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS
EP4074861A1 (de) * 2021-04-13 2022-10-19 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer
US20240110278A1 (en) * 2022-09-29 2024-04-04 Applied Materials, Inc. Dog bone exhaust slit tunnel for processing chambers
US20250034707A1 (en) * 2023-07-27 2025-01-30 Applied Materials, Inc. Combined reduced pressure -high vacuum processing chamber

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KR20100114037A (ko) 2007-12-20 2010-10-22 어플라이드 머티어리얼스, 인코포레이티드 향상된 가스 유동 분포를 가진 열 반응기

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013106552A1 (en) * 2012-01-13 2013-07-18 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR20160090681A (ko) * 2015-01-22 2016-08-01 주식회사 엘지실트론 에피택셜 웨이퍼의 성장을 위한 리액터의 재가동 준비 방법
CN107403717A (zh) * 2016-04-28 2017-11-28 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
KR20210131940A (ko) * 2016-04-28 2021-11-03 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 개선된 측면 주입 노즐 설계
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计

Also Published As

Publication number Publication date
KR20150063591A (ko) 2015-06-09
US20140079376A1 (en) 2014-03-20
US8056500B2 (en) 2011-11-15
KR101586211B1 (ko) 2016-01-19
TWI366217B (en) 2012-06-11
JP2011508435A (ja) 2011-03-10
WO2009085992A3 (en) 2009-09-24
JP2013219344A (ja) 2013-10-24
WO2009085992A2 (en) 2009-07-09
JP6119060B2 (ja) 2017-04-26
US8888916B2 (en) 2014-11-18
CN101896995A (zh) 2010-11-24
KR101677438B1 (ko) 2016-11-18
US8608853B2 (en) 2013-12-17
TW200943381A (en) 2009-10-16
CN101896995B (zh) 2012-05-30
KR20150132882A (ko) 2015-11-26
US20120058648A1 (en) 2012-03-08
JP2016036017A (ja) 2016-03-17
JP5226082B2 (ja) 2013-07-03
US20090163042A1 (en) 2009-06-25

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Appeal request date: 20151102

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2015101006543

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000