TWI366217B - Thermal reactor with improved gas flow distribution - Google Patents

Thermal reactor with improved gas flow distribution

Info

Publication number
TWI366217B
TWI366217B TW097149777A TW97149777A TWI366217B TW I366217 B TWI366217 B TW I366217B TW 097149777 A TW097149777 A TW 097149777A TW 97149777 A TW97149777 A TW 97149777A TW I366217 B TWI366217 B TW I366217B
Authority
TW
Taiwan
Prior art keywords
gas flow
flow distribution
improved gas
thermal reactor
reactor
Prior art date
Application number
TW097149777A
Other languages
English (en)
Chinese (zh)
Other versions
TW200943381A (en
Inventor
Ming Kuei Michael Tseng
Norman Tam
Yoshitaka Yokota
Agus Tjandra
Robert Navasca
Medhran Behdjat
Sundar Ramamurthy
Kedarnath Sangam
Alexander N Lerner
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200943381A publication Critical patent/TW200943381A/zh
Application granted granted Critical
Publication of TWI366217B publication Critical patent/TWI366217B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00—Forming, maintaining or circulating atmospheres in heating chambers
    • F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW097149777A 2007-12-20 2008-12-19 Thermal reactor with improved gas flow distribution TWI366217B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1543507P 2007-12-20 2007-12-20

Publications (2)

Publication Number Publication Date
TW200943381A TW200943381A (en) 2009-10-16
TWI366217B true TWI366217B (en) 2012-06-11

Family

ID=40789180

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097149777A TWI366217B (en) 2007-12-20 2008-12-19 Thermal reactor with improved gas flow distribution

Country Status (6)

Country Link
US (3) US8056500B2 (enExample)
JP (3) JP5226082B2 (enExample)
KR (3) KR101586211B1 (enExample)
CN (1) CN101896995B (enExample)
TW (1) TWI366217B (enExample)
WO (1) WO2009085992A2 (enExample)

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US9837250B2 (en) * 2013-08-30 2017-12-05 Applied Materials, Inc. Hot wall reactor with cooled vacuum containment
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US9869017B2 (en) 2014-07-10 2018-01-16 Applied Materials, Inc. H2/O2 side inject to improve process uniformity for low temperature oxidation process
KR102189137B1 (ko) * 2015-01-22 2020-12-09 에스케이실트론 주식회사 에피택셜 웨이퍼의 성장을 위한 리액터의 재가동 준비 방법
KR20160090698A (ko) * 2015-01-22 2016-08-01 주식회사 엘지실트론 에피택셜 웨이퍼의 성장을 위한 리액터의 재가동 준비 방법
KR102494614B1 (ko) * 2015-03-20 2023-02-02 어플라이드 머티어리얼스, 인코포레이티드 3d 형상추종성 처리를 위한 원자 층 프로세스 챔버
KR102350588B1 (ko) * 2015-07-07 2022-01-14 삼성전자 주식회사 인젝터를 갖는 박막 형성 장치
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KR101846509B1 (ko) * 2017-03-29 2018-04-09 (주)앤피에스 열원 장치 및 이를 구비하는 기판 처리 장치
JP6925213B2 (ja) * 2017-09-22 2021-08-25 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
USD924825S1 (en) 2018-01-24 2021-07-13 Applied Materials, Inc. Chamber inlet
US10636626B2 (en) * 2018-01-25 2020-04-28 Applied Materials, Inc. Dogbone inlet cone profile for remote plasma oxidation chamber
US11393703B2 (en) 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
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CN110137111A (zh) * 2019-05-23 2019-08-16 德淮半导体有限公司 气体分配装置及其使用方法
KR102203878B1 (ko) * 2019-06-11 2021-01-15 한양대학교 산학협력단 기판 처리 장치 및 기판 처리 방법
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EP4074861A1 (de) * 2021-04-13 2022-10-19 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer
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Also Published As

Publication number Publication date
CN101896995B (zh) 2012-05-30
US20120058648A1 (en) 2012-03-08
KR101586211B1 (ko) 2016-01-19
KR20100114037A (ko) 2010-10-22
CN101896995A (zh) 2010-11-24
JP2016036017A (ja) 2016-03-17
KR20150063591A (ko) 2015-06-09
KR101677438B1 (ko) 2016-11-18
US8888916B2 (en) 2014-11-18
US20090163042A1 (en) 2009-06-25
KR20150132882A (ko) 2015-11-26
US8056500B2 (en) 2011-11-15
TW200943381A (en) 2009-10-16
JP6119060B2 (ja) 2017-04-26
WO2009085992A3 (en) 2009-09-24
WO2009085992A2 (en) 2009-07-09
JP2013219344A (ja) 2013-10-24
JP5226082B2 (ja) 2013-07-03
US20140079376A1 (en) 2014-03-20
US8608853B2 (en) 2013-12-17
JP2011508435A (ja) 2011-03-10

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